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    • 1. 发明申请
    • Method and apparatus for address decoding of embedded DRAM devices
    • 嵌入式DRAM器件的地址解码方法和装置
    • US20050044337A1
    • 2005-02-24
    • US10952269
    • 2004-09-28
    • William CortiJoseph MarshMichael Won
    • William CortiJoseph MarshMichael Won
    • G06F12/00G06F12/02G11C8/04
    • G11C8/04
    • A method for decoding a memory array address for an embedded DRAM (eDRAM) device is disclosed, the eDRAM device being configured for operation with an SDRAM memory manager. In an exemplary embodiment of the invention, the method includes receiving a set of row address bits from the memory manager at a first time. A set of initial column address bits is then subsequently from the memory manager at a later time. The set of initial column address bits are translated to a set of translated column address bits, and the set of row address bits and the set of translated column address bits are simultaneously used to access a desired memory location in the eDRAM device. The desired memory location in the eDRAM device has a row address corresponding to the value of the set of row address bits and a column address corresponding to the value of the set of translated column address bits.
    • 公开了一种用于解码嵌入式DRAM(eDRAM)设备的存储器阵列地址的方法,该eDRAM器件被配置为与SDRAM存储器管理器一起操作。 在本发明的示例性实施例中,该方法包括在第一时间从存储器管理器接收一组行地址位。 随后,一组初始列地址位在稍后的时间从存储器管理器。 初始列地址位的集合被转换为一组转换的列地址位,并且行地址位集合和转换的列地址位的集合被同时用于访问eDRAM设备中期望的存储器位置。 eDRAM设备中期望的存储器位置具有对应于行地址位集合的值的行地址和对应于转换列地址位集合的值的列地址。
    • 3. 发明申请
    • DIGITAL TEST SYSTEM AND METHOD FOR VALUE BASED DATA
    • 数字测试系统和价值数据的方法
    • US20130069688A1
    • 2013-03-21
    • US13233374
    • 2011-09-15
    • Eugene Rogers AtwoodThomas Joseph BardsleyVictor MoyMichael Won
    • Eugene Rogers AtwoodThomas Joseph BardsleyVictor MoyMichael Won
    • H03K19/00
    • H03K19/096
    • Embodiments of the present invention provide an inequality indication system (IIS). The IIS provides built in test support which enables evaluation, in an on-chip digital logic circuit, of digital values as inequalities, with either a single pass/fail bit expressed on a device I/O or a readable register containing inequality evaluation results. The IIS enables the movement of value evaluation onto the device (chip) using a common simple method, well suited to address/data type structures or scan based structures, instead of off-chip, which then requires tester dependent custom code. The IIS, when enabled, overrides the TDO signal to allow it to function as an inequality indicator instead of a standard test data out signal.
    • 本发明的实施例提供了一种不等式指示系统(IIS)。 IIS提供了内置的测试支持,可以在片上数字逻辑电路中将数字值作为不等式进行评估,在设备I / O上表示单个通过/失败位或包含不等式评估结果的可读寄存器。 IIS使用通用简单的方法将值评估移动到设备(芯片)上,非常适合地址/数据类型结构或基于扫描的结构,而不是片外,然后需要依赖于测试者的自定义代码。 IIS启用时,会覆盖TDO信号,以使其能够用作不等式指示器,而不是标准测试数据输出信号。
    • 4. 发明授权
    • Digital test system and method for value based data
    • 数字测试系统和基于价值的数据的方法
    • US08405419B1
    • 2013-03-26
    • US13233374
    • 2011-09-15
    • Eugene Rogers AtwoodThomas Joseph BardsleyVictor MoyMichael Won
    • Eugene Rogers AtwoodThomas Joseph BardsleyVictor MoyMichael Won
    • H03K19/173H03K19/00
    • H03K19/096
    • Embodiments of the present invention provide an inequality indication system (IIS). The IIS provides built in test support which enables evaluation, in an on-chip digital logic circuit, of digital values as inequalities, with either a single pass/fail bit expressed on a device I/O or a readable register containing inequality evaluation results. The IIS enables the movement of value evaluation onto the device (chip) using a common simple method, well suited to address/data type structures or scan based structures, instead of off-chip, which then requires tester dependent custom code. The IIS, when enabled, overrides the TDO signal to allow it to function as an inequality indicator instead of a standard test data out signal.
    • 本发明的实施例提供了一种不等式指示系统(IIS)。 IIS提供了内置的测试支持,可以在片上数字逻辑电路中将数字值作为不等式进行评估,在设备I / O上表示单个通过/失败位或包含不等式评估结果的可读寄存器。 IIS使用通用简单的方法将值评估移动到设备(芯片)上,非常适合地址/数据类型结构或基于扫描的结构,而不是片外,然后需要依赖于测试者的自定义代码。 IIS启用时,会覆盖TDO信号,以使其能够用作不等式指示器,而不是标准测试数据输出信号。
    • 5. 发明授权
    • Method and apparatus for address decoding of embedded DRAM devices
    • 嵌入式DRAM器件的地址解码方法和装置
    • US07191305B2
    • 2007-03-13
    • US10952269
    • 2004-09-28
    • William D. CortiJoseph O. MarshMichael Won
    • William D. CortiJoseph O. MarshMichael Won
    • G06F12/00
    • G11C8/04
    • A method for decoding a memory array address for an embedded DRAM (eDRAM) device is disclosed, the eDRAM device being configured for operation with an SDRAM memory manager. In an exemplary embodiment of the invention, the method includes receiving a set of row address bits from the memory manager at a first time. A set of initial column address bits is then subsequently from the memory manager at a later time. The set of initial column address bits are translated to a set of translated column address bits, and the set of row address bits and the set of translated column address bits are simultaneously used to access a desired memory location in the eDRAM device. The desired memory location in the eDRAM device has a row address corresponding to the value of the set of row address bits and a column address corresponding to the value of the set of translated column address bits.
    • 公开了一种用于解码嵌入式DRAM(eDRAM)设备的存储器阵列地址的方法,该eDRAM器件被配置为与SDRAM存储器管理器一起操作。 在本发明的示例性实施例中,该方法包括在第一时间从存储器管理器接收一组行地址位。 随后,一组初始列地址位在稍后的时间从存储器管理器。 初始列地址位的集合被转换为一组转换的列地址位,并且行地址位集合和转换的列地址位的集合被同时用于访问eDRAM设备中期望的存储器位置。 eDRAM设备中期望的存储器位置具有对应于行地址位集合的值的行地址和对应于转换列地址位集合的值的列地址。
    • 7. 发明授权
    • Method and apparatus for address decoding of embedded DRAM devices
    • 嵌入式DRAM器件的地址解码方法和装置
    • US06834334B2
    • 2004-12-21
    • US09940262
    • 2001-08-28
    • William D. CortiJoseph O. MarshMichael Won
    • William D. CortiJoseph O. MarshMichael Won
    • G06F1200
    • G11C8/04
    • A method for decoding a memory array address for an embedded DRAM (eDRAM) device is disclosed, the eDRAM device being configured for operation with an SDRAM memory manager. In an exemplary embodiment of the invention, the method includes receiving a set of row address bits from the memory manager at a first time. A set of initial column address bits is then subsequently from the memory manager at a later time. The set of initial column address bits are translated to a set of translated column address bits, and the set of row address bits and the set of translated column address bits are simultaneously used to access a desired memory location in the eDRAM device. The desired memory location in the eDRAM device has a row address corresponding to the value of the set of row address bits and a column address corresponding to the value of the set of translated column address bits.
    • 公开了一种用于解码嵌入式DRAM(eDRAM)设备的存储器阵列地址的方法,该eDRAM器件被配置为与SDRAM存储器管理器一起操作。 在本发明的示例性实施例中,该方法包括在第一时间从存储器管理器接收一组行地址位。 随后,一组初始列地址位在稍后的时间从存储器管理器。 初始列地址位的集合被转换为一组转换的列地址位,并且行地址位集合和转换的列地址位的集合被同时用于访问eDRAM设备中期望的存储器位置。 eDRAM设备中期望的存储器位置具有对应于行地址位集合的值的行地址和对应于转换列地址位集合的值的列地址。