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1. 发明申请

US20070206055A1 Droplet Deposition Apparatus 审中-公开
标题翻译：液滴沉积装置
公开(公告)号：US20070206055A1
公开(公告)日：2007-09-06
申请号：US10573701
申请日：2004-09-27
申请人： Werner Zapka , Mark Crankshaw , Stephen Temple , Paul Drury
发明人： Werner Zapka , Mark Crankshaw , Stephen Temple , Paul Drury
IPC分类号： B41J2/045
CPC分类号： B41J2/14008
摘要： An inkjet printer has ink channels extending through a body, each channel being offset relative to a central plane with respect to the adjacent channel. A manifold extends through the body, intersecting each channel to define a channel end profile. The channel end profile of one channel is substantially a mirror image of the channel end profile of the adjacent channel, so that the acoustic was refection coefficient of the boundary between each channel and the manifold is substantially equal for all channels. An inclined region of the channel end profile facilitates the formation of connecting tracks for the channel electrodes.
摘要翻译：喷墨打印机具有延伸穿过主体的墨水通道，每个通道相对于相邻通道相对于中心平面偏移。歧管延伸穿过主体，与每个通道相交以限定通道端部轮廓。一个通道的通道端部轮廓基本上是相邻通道的通道端部轮廓的镜像，使得每个通道和歧管之间的边界的反射系数对于所有通道基本相等。通道端轮廓的倾斜区域有助于形成用于沟道电极的连接轨道。

2. 发明申请

US20090225111A1 Droplet deposition apparatus 审中-公开
标题翻译：液滴沉积装置
公开(公告)号：US20090225111A1
公开(公告)日：2009-09-10
申请号：US10380036
申请日：2001-09-26
申请人： Werner Zapka , Bosse Nilsson , Mike De Roos , Juergen Brunahl
发明人： Werner Zapka , Bosse Nilsson , Mike De Roos , Juergen Brunahl
IPC分类号： B41J29/38
CPC分类号： B41J2/04541 , B41J2/04563 , B41J2/04581 , B41J2/04588 , B41J2202/10
摘要： Droplet deposition apparatus comprises a plurality of fluid chambers (2), each fluid ejection chamber being defined in part by at least one wall (11) actuable by an electrical signal to effect droplet ejection from that chamber. The apparatus provides means (16) for cyclically supplying electrical signals to the walls (11) for actuation thereof, means (60) for measuring, within a period between the application of successive electrical signals to the walls, a temperature dependent electrical property of a wall of a fluid chamber to provide a signal having a magnitude dependant on the temperature of fluid in the fluid chambers, and means for adjusting the magnitude of the actuating electrical signals depending on the magnitude of the temperature dependant signal.
摘要翻译：液滴沉积设备包括多个流体室（2），每个流体喷射室部分由至少一个由电信号致动的壁（11）限定，以实现从该室喷射液滴。该装置提供用于向壁（11）周期性地提供电信号以用于其致动的装置（16），用于在施加连续的电信号到墙壁之间的时间段内测量与之相关的温度依赖性电气特性的装置（60）流体室的壁以提供具有取决于流体室中的流体的温度的幅度的信号，以及用于根据温度依赖信号的大小来调节致动电信号的大小的装置。

3. 发明授权

US5055383A Process for making masks with structures in the submicron range 失效
标题翻译：用于制作带有结构的遮罩的方法
公开(公告)号：US5055383A
公开(公告)日：1991-10-08
申请号：US420870
申请日：1989-10-12
申请人： Otto Koblinger , Klaus Meissner , Reinhold Muhl , Hans-Joachim Trumpp , Werner Zapka
发明人： Otto Koblinger , Klaus Meissner , Reinhold Muhl , Hans-Joachim Trumpp , Werner Zapka
IPC分类号： G03F1/08 , G03F7/00 , G03F7/09 , H01L21/027 , H01L21/30 , H01L21/306 , H01L21/3065 , H01L21/308 , H01L21/311
CPC分类号： G03F7/0035 , G03F7/094 , H01L21/0271 , H01L21/30608 , H01L21/3065 , H01L21/3081 , H01L21/31144
摘要： In the course of the process for making masks with structures in the submicrometer range, initially structures of photoresist or polymer material with horizontal and substantially vertical sidewalls are produced on a silicon substrate covered with an oxide layer. This is followed by a layer of silicon nitride which is deposited by LPCVD. The resultant structure is planarized with a photoresist which is etched back until the start of the vertical edges of the sidewall coating formed by the nitride layer is bared on the photoresist structures. In a photolithographic step, a trimming mask is produced on the surface of the nitride layer and the planarizing resist. The bared regions of the nitride layer are then removed by isotropic etching. The dimensions A-B of the openings defined after removal of the nitride layer from the vertical surfaces of the photoresist structures are transferred to the oxide layer by anisotropic etching. Concurrently with these structures of minimum line width, registration marks are generated which allow the adjustment necessary for a further photolithographic step to be carried out with maximum accuracy. After removal of the trimming mask, the planarizing resist, the photoresist structures and the remainder of the nitride layer, structures with coarser line widths are defined in a further photolithographic step, which are also transferred to the oxide layer. Using the oxide layer as a mask, trenches of the desired depth are produced in the silicon substrate by anisotropic etching. The mask is thinned by anisotropic etching, and the oxide layers are removed from the front and the back side by wet etching.
摘要翻译：在制造具有亚微米范围内的结构的掩模的过程中，最初在被氧化物层覆盖的硅衬底上产生具有水平和基本垂直侧壁的光致抗蚀剂或聚合物材料的结构。之后是通过LPCVD沉积的一层氮化硅。所得到的结构被蚀刻后的光致抗蚀剂平坦化，直到由氮化物层形成的侧壁涂层的垂直边缘的开始在光致抗蚀剂结构上露出。在光刻步骤中，在氮化物层和平坦化抗蚀剂的表面上制造修整掩模。然后通过各向同性蚀刻除去氮化物层的裸露区域。在从光致抗蚀剂结构的垂直表面去除氮化物层之后限定的开口的尺寸A-B通过各向异性蚀刻转移到氧化物层。与最小线宽度的这些结构同时产生对准标记，其允许以最大精度执行进一步的光刻步骤所必需的调整。在去除修剪掩模之后，在另外的光刻步骤中限定平坦化抗蚀剂，光致抗蚀剂结构和氮化物层的其余部分，具有较宽线宽的结构也被转移到氧化物层。使用氧化物层作为掩模，通过各向异性蚀刻在硅衬底中产生所需深度的沟槽。通过各向异性蚀刻使掩模变薄，并且通过湿蚀刻从前侧和后侧去除氧化物层。

4. 发明授权

US4980536A Removal of particles from solid-state surfaces by laser bombardment 失效
标题翻译：通过激光轰击从固态表面去除颗粒
公开(公告)号：US4980536A
公开(公告)日：1990-12-25
申请号：US474561
申请日：1990-01-08
申请人： Karl Asch , Joachim Keyser , Klaus Meissner , Werner Zapka
发明人： Karl Asch , Joachim Keyser , Klaus Meissner , Werner Zapka
IPC分类号： B23K26/00 , B08B7/00 , G03F1/00 , G03F7/20 , H01L21/027 , H01L21/268 , H01L21/30 , H01L21/304
CPC分类号： B08B7/0042 , G03F1/82 , H01L21/268 , G03F1/20
摘要： To remove small particles from surfaces of solid bodies at least one laser pulse of high power density (excimer laser) is directed onto the surface. The method is particularly suited to clean Si-masks used in electron-beam lithographic devices. An arrangement for in-situ-cleaning of masks in accordance to this method is integrated in such an electron-beam lithographic device.

5. 发明授权

US4855197A Mask for ion, electron or X-ray lithography and method of making it 失效
标题翻译：用于离子，电子或X射线光刻的掩模及其制作方法
公开(公告)号：US4855197A
公开(公告)日：1989-08-08
申请号：US44929
申请日：1987-05-01
申请人： Werner Zapka , Jurgen Kempf , Joachim Keyser , Karl Asch
发明人： Werner Zapka , Jurgen Kempf , Joachim Keyser , Karl Asch
IPC分类号： G03F1/20 , G03F1/22 , G03F7/20 , H01L21/027
CPC分类号： G03F1/20 , G03F1/22 , G03F7/70875 , Y10S430/167
摘要： A mask for radiation beam lithography is formed from a semiconductor wafer by thinning a region into a membrane with a hole pattern defining the pattern of the mask. The membrane is doped with a tensile stress-generating material so that minimum doping exists at the periphery of the membrane with the maximum at its center. The difference in doping between the periphery and the center is chosen so that when the mask is irradiated with a given beam current intensity, the membrane is tension-free. To make a mask in the wafer, a hole pattern is formed by etching holes in the membrane or by depositing a layer on the membrane. The wafer is thinned from the opposite surface until the holes in the hole pattern are throughholes or until the desired thickness is reached. The membrane is doped with tensile-stress-generating material using ion implantation or diffusion proportionally to the temperature distribution existing in the membrane during irradiation with exposure beams.
摘要翻译：用半导体晶片形成用于辐射束光刻的掩模，通过将区域变薄成具有限定掩模图案的孔图案的膜。膜被拉伸应力产生材料掺杂，使得最小掺杂存在于膜的周边处，其中心处具有最大值。选择周边和中心之间的掺杂差异，使得当以给定的束电流强度照射掩模时，膜是无张力的。为了在晶片中制作掩模，通过蚀刻膜中的孔或通过在膜上沉积一层形成孔图案。晶片从相对表面变薄，直到孔图案中的孔为通孔，或直到达到所需厚度。使用离子注入或扩散成膜时，利用曝光光束照射期间膜与存在于膜中的温度分布成比例地掺入拉伸应力产生材料。

6. 发明申请

US20070188560A1 Droplet deposition apparatus 审中-公开
标题翻译：液滴沉积装置
公开(公告)号：US20070188560A1
公开(公告)日：2007-08-16
申请号：US10590620
申请日：2005-02-28
申请人： Werner Zapka , John Corrall
发明人： Werner Zapka , John Corrall
IPC分类号： B41J2/05
CPC分类号： B41J2/14209 , B41J2202/08 , B41J2202/20
摘要： Ink jet apparatus with two piezoelectric actuators arranged back-to-back on parallel thermal management surfaces of a water-cooled chassis. The chassis is formed by the bringing together of two concave plastic molded parts, having high thermal conductivity. A common nozzle plate attached to the two actuators helps to ensure accurate nozzle alignment.
摘要翻译：具有两个压电致动器的喷墨装置背对背地布置在水冷底盘的平行热管理表面上。通过将具有高导热性的两个凹形塑料模制部件组合在一起形成底盘。连接到两个执行器上的常见喷嘴板有助于确保喷嘴对准。

7. 发明授权

US06796630B2 Droplet deposition apparatus 失效
标题翻译：液滴沉积装置
公开(公告)号：US06796630B2
公开(公告)日：2004-09-28
申请号：US10204040
申请日：2002-12-06
申请人： Robert M. Ison , Werner Zapka , Jerzy M. Zaba
发明人： Robert M. Ison , Werner Zapka , Jerzy M. Zaba
IPC分类号： B41J29377
CPC分类号： B41J25/001 , B41J2/14209 , B41J25/34 , B41J2002/14403 , B41J2002/14419 , B41J2202/12
摘要： Droplet deposition apparatus includes a base and a printhead adjustably mounted on the base and positionable relative to a datum on the base such that a swath or print produced by the printhead is in a predetermined position relative to the datum, the base being locatable on a printer using the datum. This can enable the printer to be easily replaced without any loss of alignment of the produced print swath relative to the carriage or body of the printer.
摘要翻译：液滴沉积设备包括基座和可调节地安装在基座上并且相对于基座上的基准定位的打印头，使得由打印头产生的条纹或打印件相对于基准处于预定位置，基座可定位在打印机使用基准。这样可以方便地更换打印机，而不会损坏所生产的打印条相对于打印机的托架或主体。

8. 发明授权

US5326426A Undercut membrane mask for high energy photon patterning 失效
标题翻译：底切膜面罩用于高能光子图案化
公开(公告)号：US5326426A
公开(公告)日：1994-07-05
申请号：US791712
申请日：1991-11-14
申请人： Andrew C. Tam , Gerhard E. Wolbold , Werner Zapka
发明人： Andrew C. Tam , Gerhard E. Wolbold , Werner Zapka
IPC分类号： G03F1/20 , H01L21/027 , H01L21/30 , H01L21/306 , B44C1/22 , C03C15/00
CPC分类号： G03F1/20 , Y10T428/24322
摘要： A mask for use with high energy radiation sources in precision projection processing by excimer lasers, for example, is described. The mask comprises a suitable substrate, such as silicon, upon which a multilayer dielectric stack is formed which acts as a reflective coating for the impinging excimer laser radiation, minimizing energy absorption by the mask substrate. The mask transparent areas are defined by the through-holes in the mask. The through-holes are formed with a conically undercut edge profile to define a thin object plane for the mask and minimize scattering of the radiation from the through-hole sidewalls. A method for fabricating the mask is also described.
摘要翻译：描述了例如在准分子激光器的精密投影处理中用于高能量辐射源的掩模。掩模包括合适的衬底，例如硅，其上形成多层电介质叠层，其用作入射准分子激光辐射的反射涂层，使掩模衬底的能量吸收最小化。掩模透明区域由掩模中的通孔限定。通孔形成有锥形底切边缘轮廓，以限定用于掩模的薄物体平面并使来自通孔侧壁的辐射的散射最小化。还描述了用于制造掩模的方法。

9. 发明授权

US4724392A System for testing magnetic head/disk interfaces 失效
标题翻译：磁头/磁盘接口测试系统
公开(公告)号：US4724392A
公开(公告)日：1988-02-09
申请号：US856306
申请日：1986-04-28
申请人： Upali Bandara , Gerhard Elsner , Volker Heinrich , Holger Hinkel , Artur Lang , Erwin Prinz , Werner Steiner , Werner Zapka
发明人： Upali Bandara , Gerhard Elsner , Volker Heinrich , Holger Hinkel , Artur Lang , Erwin Prinz , Werner Steiner , Werner Zapka
IPC分类号： G11B5/84 , G01N3/56 , G01N13/00 , G01N27/00 , G11B5/00 , G11B5/012 , G11B5/58 , G11B17/32 , G11B33/10 , G01N27/60
CPC分类号： G11B33/10 , G11B17/32 , G11B5/012 , G11B5/58
摘要： Method for measuring the properties of a slider/disk interface in a magnetic disk storage apparatus by measuring a triboelectric current flowing between disk and slider. Rotational speed is adjusted between 100 and 500 rpm so as to obtain a frictional contact between disk and slider. The shape of the tribo current curve obtained during the measuring time interval is analyzed. An early maximum of the tribo current amplitude and a subsequent continual decay indicates a good slider/disk interface and a long lifetime.
摘要翻译：通过测量在盘和滑块之间流动的摩擦电流来测量磁盘存储装置中的滑块/盘接口的属性的方法。旋转速度在100和500rpm之间调节，以获得盘和滑块之间的摩擦接触。分析在测量时间间隔期间获得的摩擦电流曲线的形状。磨牙电流幅度的早期最大值和随后的连续衰减表示良好的滑块/磁盘接口和长寿命。

10. 发明授权

US4578587A Error-corrected corpuscular beam lithography 失效
标题翻译：误差校正微粒束光刻
公开(公告)号：US4578587A
公开(公告)日：1986-03-25
申请号：US694888
申请日：1985-01-25
申请人： Uwe Behringer , Harald Bohlen , Peter Nehmiz , Werner Zapka
发明人： Uwe Behringer , Harald Bohlen , Peter Nehmiz , Werner Zapka
IPC分类号： G03F1/00 , G01B11/00 , G03F1/08 , G03F1/16 , G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , H01L21/30 , H01L21/66
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/30455 , H01J2237/31794 , H01J2237/31798
摘要： An apparatus and method for testing transmission masks for corpuscular lithography, in which an image of a portion of mask is guided across a pinhole diaphragm, comprising at least one aperture with submicron dimensions, by inclining the corpuscular beam. The relative spacing of two measuring points is derived from the interferometrically measured table displacement and the beam inclination. This test for geometrical errors is effected by placing below the single hold in the diaphragm a scintillator followed by a photomultiplier coupled to an output circuit.For testing the entire mask area for errors and impurity particles, a multihole diaphragm, having submicron apertures arranged in matrix fashion, can be used above an integrated circuit of the charge transfer type which provides a MOS capacitor as a particle detector underneath each diaphragm opening. The exposure mask is scanned in steps, effecting several single exposures at each position by inclining the beam.
摘要翻译：一种用于测试用于微粒光刻的透射掩模的装置和方法，其中通过使颗粒光束倾斜，掩模的一部分的图像被引导穿过针孔膜片，包括至少一个具有亚微米尺寸的孔。两个测量点的相对间距来自干涉测量台位移和梁倾角。这种几何误差的测试是通过放置在隔膜中的单个保持下面的闪烁器，然后耦合到输出电路的光电倍增管来实现的。为了测试整个掩模区域的误差和杂质颗粒，可以在电荷转移类型的集成电路之上使用具有以矩阵方式布置的亚微米孔的多孔隔膜，其提供MOS电容器作为每个隔膜开口下方的颗粒检测器。曝光掩模逐步扫描，通过倾斜光束在每个位置进行几次单次曝光。

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