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    • 3. 发明授权
    • Magnetic disk substrate of fiber-reinforced plastic
    • 纤维增强塑料磁盘基片
    • US4415942A
    • 1983-11-15
    • US287674
    • 1981-07-28
    • Albert FroschHolger HinkelGeorg Kraus
    • Albert FroschHolger HinkelGeorg Kraus
    • B32B5/28B32B5/22B32B33/00G11B5/62G11B5/73G11B5/733G11B5/82
    • G11B5/62G11B5/7305G11B5/82
    • The substrate 1 for magnetic disks takes the form of a laminate made up of a plurality of individual thin, fiber-reinforced, anisotropic and unidirectional lamellae. These lamellae are arranged staggered on top of each other at few angular spacings, i.e., at great angles of up to 60.degree., and are finally pressed together. The outer layers and lamellae, respectively, may be reinforced by stronger fibers or other material, such as carbon fibers outside and glass fibers inside, to influence the flexural modulus and the shearing modulus independently of each other. This makes for a substrate which consists of anisotropic material, whose characteristics are essentially isotropic, which is lighter than previously used substrates, and which has a higher critical number of revolutions.
    • 用于磁盘的基板1采用由多个单独的薄的纤维增强的各向异性和单向薄片组成的叠层的形式。 这些薄片以几个角度间隔(即,高达60°的大角度)以彼此顶部交错布置,并最终压在一起。 外层和薄片分别可以由更强的纤维或其他材料(例如碳纤维外部)和玻璃纤维内部增强,以相互独立地影响弯曲模量和剪切模量。 这使得由各向异性材料组成的衬底,其特性基本上是各向同性的,其比以前使用的衬底更轻,并且具有更高的临界转数。
    • 9. 发明授权
    • Method of making semiconductor device structures by means of ion
implantation under a partial pressure of oxygen
    • 通过离子注入在氧分压下制造半导体器件结构的方法
    • US4386968A
    • 1983-06-07
    • US274986
    • 1981-06-18
    • Holger HinkelJurgen KempfGeorg KrausGerhard E. Schmid
    • Holger HinkelJurgen KempfGeorg KrausGerhard E. Schmid
    • H01L21/266H01L21/265H01L21/316H01L21/263
    • H01L21/02238H01L21/02255H01L21/26513H01L21/2652H01L21/31662
    • Disclosed is a simplified method of producing semiconductor device structures in an integrated technology using at least one ion implantation step. Implantation of the doping ions into a silicon wafer, for example, for producing a subcollector or an emitter, is not effected, as previously, in an ultra-high vacuum atmosphere through a thin protective layer of silicon dioxide which is applied by a separate thermal oxidation step prior to implantation, but the doping ions are directly implanted into the bare silicon wafer. The latter implantation is effected in an atmosphere of increased partial pressure of oxygen. Enhanced diffusion of the oxygen adsorbed at the surface occurs into the vacancies which are generated by the implanted doping ions close the surface of the silicon wafer. In this manner a silicon dioxide protective layer is formed already in the initial stage of ion implantation. As a result one process step can be saved, namely, the production of the protective layer by thermal oxidation prior to ion implantation.
    • 公开了使用至少一个离子注入步骤以集成技术制造半导体器件结构的简化方法。 将掺杂离子注入到例如用于制造子集电极或发射极的硅晶片中,如前所述,在超高真空气氛中通过二氧化硅的薄保护层进行注入,所述薄保护层通过单独的热 在植入之前的氧化步骤,但掺杂离子被直接注入裸硅晶片。 后者的注入在氧分压增加的气氛中进行。 在表面处吸附的氧的增强的扩散发生在由注入的掺杂离子产生的空位中,这些离子靠近硅晶片的表面。 以这种方式,在离子注入的初始阶段已形成二氧化硅保护层。 因此,可以节省一个工艺步骤,即在离子注入之前通过热氧化生产保护层。