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1. 发明授权

US07446401B2 Structure of power semiconductor with twin metal and ceramic plates 有权
标题翻译：功率半导体与双金属和陶瓷板的结构
公开(公告)号：US07446401B2
公开(公告)日：2008-11-04
申请号：US11264048
申请日：2005-11-02
申请人： Wen-Ping Huang
发明人： Wen-Ping Huang
IPC分类号： H01L23/02
CPC分类号： H01L23/051 , H01L2224/2732 , H01L2224/32245 , H01L2224/33181 , H01L2224/83192 , H01L2224/8384 , H01L2924/00
摘要： A designing for a power semiconductor, and especially to a structure of a power semiconductor formed by using the basic materials including two metal plates and a ceramic plate, in the power semiconductor, mainly surfaces of the ceramic base plate provided with a receiving groove is metallized, and the metallic base plates having electric connecting pins extending outwards therefrom are placed at the two lateral sides of the ceramic base plate, then a chip is placed in the receiving groove of the ceramic base plate, and the ceramic base plate is sintered together with the two metallic base plates, thus the structure of the power semiconductor with the twin metal plates and the ceramic plate is formed.
摘要翻译：功率半导体的设计，特别是在功率半导体中使用包括两个金属板和陶瓷板的基本材料形成的功率半导体的结构主要是设置有接收槽的陶瓷基板的表面被金属化并且将具有从其向外延伸的电连接销的金属基板放置在陶瓷基板的两个侧面，然后将芯片放置在陶瓷基板的接收槽中，并将陶瓷基板与两个金属基板，从而形成具有双金属板和陶瓷板的功率半导体的结构。

2. 发明授权

US08791551B2 Well-through type diode element/component and manufacturing method for them 有权
标题翻译：通孔型二极管元件/元件及其制造方法
公开(公告)号：US08791551B2
公开(公告)日：2014-07-29
申请号：US13418452
申请日：2012-03-13
申请人： Wen-Ping Huang , Wen-Hu Wu , His-Piao Lai , Chien-Wu Chen
发明人： Wen-Ping Huang , Wen-Hu Wu , His-Piao Lai , Chien-Wu Chen
IPC分类号： H01L29/06 , H01L21/00 , H01L29/66 , H01L29/861
CPC分类号： H01L29/66136 , H01L29/861 , H01L29/8611
摘要： A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc.
摘要翻译：一种通孔型二极管元件/元件制造方法，其具有通过在穿透型之后的金属化工艺在同一平面上构建的二极管元件/部件的一对（成对）第一和第二电极，以穿透 PN结耗尽区域/势垒区域，并且引导电极之一的电子不受阻碍地流过耗尽/屏障区域; 本发明直接进行绝缘保护，金属化和细长焊球等工艺，可以独立完成芯片级封装（CSP）的新技术; 它具有以下特点：谷物正好是产品生产，不需要连线，能耗低，成本低，重量轻，薄而小。

3. 发明授权

US06334971B1 Manufacturing method for diode group processed by injection molding on the surface 有权
标题翻译：表面通过注射成型处理的二极管组的制造方法
公开(公告)号：US06334971B1
公开(公告)日：2002-01-01
申请号：US09620069
申请日：2000-07-20
申请人： Wen-Ping Huang
发明人： Wen-Ping Huang
IPC分类号： B29C7070
CPC分类号： B29C45/14655 , H01L24/33 , H01L24/97 , H01L2224/32245 , H01L2924/181 , Y10T29/49135 , H01L2924/00012
摘要： A manufacturing method for a diode group processed by injection molding on the surface thereof, the diode group is formed by having a plurality of left and right elongate tapes which are pressed to form respectively left and right contact ends, each pair of the left and right elongate tapes have a left lap end and a right lap end to sandwich a chip therebetween. Then injection molding is performed to envelop the left and right elongate tapes and to form an elongate strip having an insulation outer layer with the left and right contact ends exposed and with a recess at the bottom of and between every two neighboring chips. The recesses separate the left contact ends of the left elongate tapes from the right contact ends of the right elongate tapes but still leave the plural diodes in series connected mutually in an insulation state. The strip can be broken off at desire recesses to get a diode group having desired number of diodes processed by injection molding on the surface of the strip.
摘要翻译：通过在其表面上注射成型的二极管组的制造方法，二极管组通过具有多个左右的细长带形成，所述多个左右的细长带分别被压制形成左右的接触端，每对左右细长带具有左膝盖端和右膝盖端以夹在其间的芯片。然后进行注射成型以包封左右细长带并形成具有绝缘外层的细长带，其中左和右接触端暴露，并且在每两个相邻的芯片之间和之间的凹部中。凹部将左细长带的左接触端与右细长带的右接触端分开，但是仍然使绝缘状态下相互串联连接的多个二极管离开。该带可以在所需的凹部处断裂，以获得具有所需数量的二极管的二极管组，其通过在条带的表面上注塑而加工。

4. 发明授权

US08742533B2 Constant current semiconductor device having a schottky barrier 失效
标题翻译：具有肖特基势垒的恒流半导体器件
公开(公告)号：US08742533B2
公开(公告)日：2014-06-03
申请号：US13219838
申请日：2011-08-29
申请人： Sheau-Feng Tsai , Wen-Ping Huang , Tzuu-Chi Hu
发明人： Sheau-Feng Tsai , Wen-Ping Huang , Tzuu-Chi Hu
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L23/3178 , H01L29/0657 , H01L29/861 , H01L33/0033 , H01L2224/94 , H01L2224/11
摘要： This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.
摘要翻译：本发明揭示半绝缘衬底上的N型或P型外延层的恒流半导体器件，该器件通过使用肖特基势垒在一定偏压下截止导通沟道中的电流并提供常数作为第一电极的肖特基势垒部/欧姆接触部分之间的截止电压和击穿电压区域内的电流分别为第二电极，并且具有比双极型器件更低的截止电压（Vkp）的优异特性并且通过积分几个恒定电流单元容易地获得更高的恒定电流（Ip）。

5. 发明申请

US20110272777A1 Manufacturing method and structure of a surface-mounting type diode co-constructed from a silicon wafer and a base plate 有权
标题翻译：由硅晶片和基板共构造的表面安装型二极管的制造方法和结构
公开(公告)号：US20110272777A1
公开(公告)日：2011-11-10
申请号：US12662792
申请日：2010-05-04
申请人： Wen-Ping Huang , Paul Wu
发明人： Wen-Ping Huang , Paul Wu
IPC分类号： H01L29/861 , H01L21/78 , H01L21/761
CPC分类号： H01L29/861 , H01L21/2007 , H01L21/78 , H01L29/66136 , H01L2224/32245 , H01L2224/33 , H01L2224/48247 , H01L2924/181 , H01L2924/00012
摘要： A manufacturing method and a structure of a surface-mounting type diode co-constructed from a silicon wafer and a base plate, in the method, a diffused wafer is stacked with a high temperature durable high strength base plate to have them sintered and molten together for connecting with each other to form a co-constructure; then the diffused wafer is processed by etching and ditching for filling with insulation material, electrodes of the diffused wafer are metalized and all on an identical plane, then production of all functional lines is completed; and then the co-constructure is cut to form a plurality of separated individuals which each forms a surface-mounting type diode to be applied straight. In comparison with the conventional techniques, manufacturing of the present invention is simplified and economic in reducing working hours, size and cost of production and the wafer is not subjected to breaking during manufacturing.
摘要翻译：在该方法中，将散射晶片与硅晶片和基板共构成的表面安装型二极管的制造方法和结构与高温耐用的高强度基板层叠，使其烧结并熔融在一起用于连接以形成共同结构; 然后通过蚀刻和沟槽处理扩散晶片以填充绝缘材料，扩散晶片的电极被金属化并且都在相同的平面上，然后完成所有功能线的生产; 然后切割共同结构以形成多个分离的个体，每个个体形成要被直线施加的表面安装型二极管。与传统技术相比，简化了本发明的制造，并且在减少工作时间，生产的尺寸和成本以及制造过程中不会损坏晶片的经济性。

6. 发明申请

US20070096276A1 Structure and manufacturing method of power semiconductor with twin metal and ceramic plates 有权
标题翻译：功率半导体与双金属和陶瓷板的结构和制造方法
公开(公告)号：US20070096276A1
公开(公告)日：2007-05-03
申请号：US11264048
申请日：2005-11-02
申请人： Wen-Ping Huang
发明人： Wen-Ping Huang
IPC分类号： H01L23/02
CPC分类号： H01L23/051 , H01L2224/2732 , H01L2224/32245 , H01L2224/33181 , H01L2224/83192 , H01L2224/8384 , H01L2924/00
摘要： A designing for a power semiconductor, and especially to a structure of a power semiconductor formed by using the basic materials including two metal plates and a ceramic plate, in the power semiconductor, mainly surfaces of the ceramic base plate provided with a receiving groove is metallized, and the metallic base plates having electric connecting pins extending outwards therefrom are placed at the two lateral sides of the ceramic base plate, then a chip is placed in the receiving groove of the ceramic base plate, and the ceramic base plate is sintered together with the two metallic base plates, thus the structure of the power semiconductor with the twin metal plates and the ceramic plate is formed.
摘要翻译：功率半导体的设计，特别是在功率半导体中使用包括两个金属板和陶瓷板的基本材料形成的功率半导体的结构主要是设置有接收槽的陶瓷基板的表面被金属化并且将具有从其向外延伸的电连接销的金属基板放置在陶瓷基板的两个侧面，然后将芯片放置在陶瓷基板的接收槽中，并将陶瓷基板与两个金属基板，从而形成具有双金属板和陶瓷板的功率半导体的结构。

7. 发明申请

US20050259400A1 Heat sinking structure of power semiconductor 审中-公开
标题翻译：功率半导体散热结构
公开(公告)号：US20050259400A1
公开(公告)日：2005-11-24
申请号：US10851055
申请日：2004-05-24
申请人： Wen-Ping Huang
发明人： Wen-Ping Huang
IPC分类号： H01L23/367 , H01L23/495 , H05K7/20
CPC分类号： H01L23/367 , H01L23/49562 , H01L2924/1815
摘要： The heat sinking structure of the present invention is fixedly provided on the surface of a crystal layer of a semiconductor with a heat conducting plate made of copper, the heat conducting plate has therein a plurality of channels parallel to the surface of the crystal layer, the channels extend through the heat conducting plate to form passageways for guiding air flow to exhaust, and to speed up the heat exchanging of the heat conducting plate with air, so that a heat sinking structure that is structurally firm, small by volume and high in efficiency of heat sinking as well as easy for processing in manufacturing is obtained.
摘要翻译：本发明的散热结构被固定地设置在具有由铜制成的导热板的半导体的结晶层的表面上，导热板中具有平行于晶体层的表面的多个通道，通道延伸穿过导热板以形成用于引导排气的通道，并且加速导热板与空气的热交换，使得结构牢固，体积小且效率高的散热结构的散热以及制造中的加工容易。

8. 发明授权

US6085396A Manufacturing method for rectifying diodes 有权
标题翻译：整流二极管的制造方法
公开(公告)号：US6085396A
公开(公告)日：2000-07-11
申请号：US311573
申请日：1999-05-14
申请人： Wen-Ping Huang
发明人： Wen-Ping Huang
IPC分类号： H01L23/495 , H01G7/00
CPC分类号： H01L23/49562 , H01L24/01 , Y10T29/435 , Y10T29/49002 , Y10T29/49117
摘要： A manufacturing method for rectifying diodes, wherein, a plurality of upper and lower pins are combined with a plurality of electronic chips to form a coarse blank. And then they are processed to form shaped insulating layers by molding. Each insulating layer is processed to have superficial coarseness having micro-protuberances thereon; the areas on both the lateral sides of the insulating layer are applied with electric conductive layer. The electric conductive layer is combined with the insulating layer; they are equidistantly cut with a knife into shaped rectifying diodes. The shaped rectifying diodes each is further electrically plated with a further layer of electric conductive material on both sides of the electric conductive layer to form a harder protection layer, and then finished rectifying diodes are obtained. The upper and lower pins are in the form of thin sheets, plus the small chips, the shaped rectifying diodes have small volumes. The rectifying diodes are made by mass production, hence work efficiency can be increased, while cost of production can be reduced.
摘要翻译：一种用于整流二极管的制造方法，其中，多个上销和下销与多个电子芯片组合以形成粗坯。然后通过模制加工形成绝缘层。每个绝缘层被加工成具有其上具有微突起的浅表粗糙度; 绝缘层的两侧的面积被施加导电层。导电层与绝缘层组合; 它们用刀等距切割成成形的整流二极管。成形的整流二极管在导电层的两侧进一步与导电材料层进一步电镀以形成更硬的保护层，然后获得完成的整流二极管。上下引脚为薄片形式，加上小芯片，形状整流二极管体积小。整流二极管是通过批量生产制造的，因此可以提高工作效率，同时降低生产成本。

9. 发明授权

US5668207A Styrenic resin composition 失效
标题翻译：苯乙烯树脂组合物
公开(公告)号：US5668207A
公开(公告)日：1997-09-16
申请号：US692672
申请日：1996-08-06
申请人： Wen-Ping Huang , Dong-Bi Shiueh
发明人： Wen-Ping Huang , Dong-Bi Shiueh
IPC分类号： C08K5/01 , C08L25/12 , C08L51/04
CPC分类号： C08L25/12 , C08K5/01 , C08L51/04
摘要： A styrenic resin composition with little foul odor is provided. The styrenic resin composition contains:(1) 99.995-95.0 wt % of a styrenic resin which is made from 5-100 wt % of rubbery graft copolymer (A) and 95-0 wt % of styrenic copolymer (B), wherein the rubbery graft copolymer (A) is prepared by graft polymerization of 50 to 90 wt % of vinyl aromatic monomers, 10 to 50 wt % of vinyl cyanide monomers and 0-40 wt % of copolymerizable monomers in the presence of rubbery polymer; and(2) 0.005-5.0 wt % of a sesquiterpene compound (C).
摘要翻译：提供了几乎没有臭味的苯乙烯树脂组合物。苯乙烯树脂组合物含有：（1）99.995-95.0重量％的由5-100重量％的橡胶接枝共聚物（A）和95-0重量％的苯乙烯共聚物（B）制成的苯乙烯树脂，其中橡胶状接枝共聚物（A）通过在橡胶状聚合物的存在下接枝聚合50〜90重量％的乙烯基芳族单体，10〜50重量％的乙烯基氰单体和0〜40重量％的可共聚单体，和（2）0.005-5.0重量％的倍半萜烯化合物（C）。

10. 发明授权

US08560867B2 Server system and method for processing power off 失效
标题翻译：服务器系统和处理电源的方法
公开(公告)号：US08560867B2
公开(公告)日：2013-10-15
申请号：US13161273
申请日：2011-06-15
申请人： Ying-Chih Lu , Wen-Ping Huang
发明人： Ying-Chih Lu , Wen-Ping Huang
IPC分类号： G06F1/26
CPC分类号： G06F1/26 , G06F1/266
摘要： A method for processing power-off suitable for a server system is provided. The server system includes a first node, a second node, and a power supply. The first and second nodes share the power supply. The method includes the following steps. A power-off process is performed by the first and second nodes respectively according to a power-off signal. An interception process is activated to intercept a completion signal generated in the power-off process, and an interrupt is triggered. The interrupt is performed by an interrupt handler, so as to detect whether the first and second nodes complete a power-off process. When the first and second nodes already complete the power-off process, the interception process is inactivated and the generated completion signal is recovered and transferred to the power supply for turning off a power.
摘要翻译：提供了适用于服务器系统的处理断电的方法。服务器系统包括第一节点，第二节点和电源。第一和第二节点共享电源。该方法包括以下步骤。根据断电信号分别由第一和第二节点执行断电处理。截取过程被激活以截取在断电过程中产生的完成信号，并且触发中断。中断由中断处理程序执行，以便检测第一个和第二个节点是否完成关闭进程。当第一和第二节点已经完成关断过程时，拦截处理被停用，并且生成的完成信号被恢复并传送到电源以关闭电源。

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