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1. 发明授权

US06190963B1 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same 有权
$Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same$
标题翻译：复合铱金属 - 氧阻隔结构与难熔金属伴侣屏障及其方法相同
公开(公告)号：US06190963B1
公开(公告)日：2001-02-20
申请号：US09316661
申请日：1999-05-21
申请人： Fengyan Zhang , Sheng Teng Hsu , Jer-shen Maa , Wei-Wei Zhuang
发明人： Fengyan Zhang , Sheng Teng Hsu , Jer-shen Maa , Wei-Wei Zhuang
IPC分类号： H01L218242
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55
摘要： An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir—M—O composite film barrier layer and an Ir—M—O composite film ferroelectric electrode are also provided.
摘要翻译：已经提供了可用于形成铁电电容器的电极的Ir-M-O复合膜，其中M包括各种难熔金属。 Ir组合膜在氧气环境中耐高温退火。当与由相同种类的M过渡金属制成的底层阻挡层一起使用时，所得到的导电屏障还抑制Ir扩散到任何下面的Si衬底中。结果，不形成铱硅化物产物，这降低了电极界面的特性。也就是说，即使在氧气中，Ir组合膜在高温退火过程中仍保持导电性，不会剥离或形成小丘。 Ir-M-O导电电极/屏障结构可用于非易失性FeRAM器件，DRAM，电容器，热释电红外传感器，光学显示器，光开关，压电换能器和表面声波器件。还提供了形成Ir-M-O复合膜阻挡层和Ir-M-O复合膜铁电电极的方法。

2. 发明授权

US06537361B2 Method of the synthesis and control of PGO spin-coating precursor solutions 失效
公开(公告)号：US06537361B2
公开(公告)日：2003-03-25
申请号：US09822637
申请日：2001-03-30
申请人： Wei-Wei Zhuang , Fengyan Zhang , Jer-Shen Maa , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Fengyan Zhang , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L2122
CPC分类号： H01L21/02197 , C01G21/00 , C01P2002/86 , H01L21/02112 , H01L21/02175 , H01L21/02282 , H01L21/31604 , H01L21/31691
摘要： A method of synthesizing a PGO spin-coating precursor solution includes utilizing the starting materials of lead acetate trihydrate (Pb(OAc)2•3H2O) and germanium alkoxide (Ge(OR)4(R=C2H5 and CH(CH3)2)). The organic solvent is di(ethylene glycol) ethyl ether. The mixed solution of lead and di(ethylene glycol) ethyl ether is heated in an atmosphere of air at a temperature no greater than 185° C., and preferably no greater than 190° C. for a time period in a range of thirty minutes to four hours. During the heating step the color of the solution is monitored to determine when the reaction is complete and when decomposition of the desired product begins to take place. The solution is then added to germanium di(ethylene glycol) ethyl ether to make the PGO spin-coating solution. This second step also entails heating the solution to a temperature no greater than 190° C. for a time period in a range of 0.5 to 2.0 hours. The process results in a PGO precursor solution suitable for use in spin-coating.

3. 发明授权

US06441417B1 Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same 失效
标题翻译：用于非易失性存储器应用的ZrO 2上的单个c轴PGO薄膜及其制造方法
公开(公告)号：US06441417B1
公开(公告)日：2002-08-27
申请号：US09820022
申请日：2001-03-28
申请人： Fengyan Zhang , Yanjun Ma , Jer-Shen Maa , Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Fengyan Zhang , Yanjun Ma , Jer-Shen Maa , Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： H01L2972
CPC分类号： H01L21/28291 , H01L21/31604 , H01L21/31691 , H01L28/56 , H01L29/516
摘要： A thin film structure includes a substantially single-phase, c-axis PGO film on an insulator for use in metal ferroelectric insulator semiconductor single transistor non-volatile memory applications. The PGO on insulator structure can also be used in capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. In a preferred embodiment, the PGO film is deposited on a Zirconium Oxide insulator layer.
摘要翻译：薄膜结构包括用于金属铁电绝缘体半导体单晶体管非易失性存储器应用的绝缘体上的基本单相c轴PGO膜。 PGO绝缘体结构也可用于电容器，热释电红外传感器，光学显示器，光开关，压电换能器和表面声波器件中。在优选实施例中，PGO膜沉积在氧化锆绝缘体层上。

4. 发明授权

US06585821B1 Method of monitoring PGO spin-coating precursor solution synthesis using UV spectroscopy 失效
标题翻译：使用紫外光谱法监测PGO旋涂前体溶液合成的方法
公开(公告)号：US06585821B1
公开(公告)日：2003-07-01
申请号：US10345636
申请日：2003-01-15
申请人： Wei-Wei Zhuang , Fengyan Zhang , Jer-shen Maa , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Fengyan Zhang , Jer-shen Maa , Sheng Teng Hsu
IPC分类号： C23C1616
CPC分类号： H01L21/02197 , C01G21/00 , C01P2002/86 , H01L21/02112 , H01L21/02175 , H01L21/02282 , H01L21/31604 , H01L21/31691
摘要： A method of monitoring the synthesis of a PGO spin-coating precursor solution includes monitoring heating of the solution with a UV spectrometer and terminating the heating step when a solution property reaches a predetermined value. The method utilizes the starting materials of lead acetate trihydrate (Pb(OAc)2.3H2O) and germanium alkoxide (Ge(OR)4 (R=C2H5 and CH(CH3)2)). The organic solvent is di(ethylene glycol)ethyl ether. The mixed solution of lead and di(ethylene glycol)ethyl ether is heated in an atmosphere of air at a temperature no greater than 190° C., and preferably no greater than 185° C. for a time period in a range of approximately eighty-five minutes. During the heating step the solution properties are monitored to determine when the reaction is complete and when decomposition of the desired product begins to take place. The solution is then added to germanium di(ethylene glycol)ethyl ether to make the PGO spin-coating solution. This second step also entails heating the solution to a temperature no greater than 190° C. for a time period in a range of 0.5 to 2.0 hours. This heating step is also monitored with a UV spectrometer to determine when the heating step should be terminated. The process results in a PGO precursor solution suitable for use in spin-coating.
摘要翻译：监测PGO旋涂前体溶液合成的方法包括用UV光谱仪监测溶液的加热，并且当溶液性能达到预定值时终止加热步骤。该方法采用醋酸铅三水合物（Pb（OAc）2.3H2O）和烷氧基锗（Ge（OR）4（R = C2H5和CH（CH3）2））的原料。有机溶剂是二（乙二醇）乙醚。将铅和二（乙二醇）乙醚的混合溶液在不大于190℃，优选不大于185℃的空气气氛中加热约80℃的时间 -5分钟。在加热步骤期间，监测溶液性质以确定反应何时完成，并且当所需产物的分解开始发生时。然后将该溶液加入到二（乙二醇）二乙醚中以制备PGO旋涂溶液。该第二步骤还需要将溶液加热至不高于190℃的温度，持续0.5至2.0小时的时间。该加热步骤也用UV光谱仪监测，以确定加热步骤何时终止。该方法产生适合用于旋涂的PGO前体溶液。

5. 发明授权

US06288420B1 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier 有权
$Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier$
标题翻译：复合铱金属氧阻隔结构与难熔金属伴侣屏障
公开(公告)号：US06288420B1
公开(公告)日：2001-09-11
申请号：US09703192
申请日：2000-10-31
申请人： Fengyan Zhang , Sheng Teng Hsu , Jer-shen Maa , Wei-Wei Zhuang
发明人： Fengyan Zhang , Sheng Teng Hsu , Jer-shen Maa , Wei-Wei Zhuang
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55
摘要： An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir—M—O composite film barrier layer and an Ir—M—O composite film ferroelectric electrode are also provided.
摘要翻译：已经提供了可用于形成铁电电容器的电极的Ir-M-O复合膜，其中M包括各种难熔金属。 Ir组合膜在氧气环境中耐高温退火。当与由相同种类的M过渡金属制成的底层阻挡层一起使用时，所得到的导电屏障还抑制Ir扩散到任何下面的Si衬底中。结果，不形成铱硅化物产物，这降低了电极界面的特性。也就是说，即使在氧气中，Ir组合膜在高温退火过程中仍保持导电性，不会剥离或形成小丘。 Ir-M-O导电电极/屏障结构可用于非易失性FeRAM器件，DRAM，电容器，热释电红外传感器，光学显示器，光开关，压电换能器和表面声波器件。还提供了形成Ir-M-O复合膜阻挡层和Ir-M-O复合膜铁电电极的方法。

6. 发明授权

US06998661B2 Integrated circuit structure including electrodes with PGO ferroelectric thin film thereon 失效
标题翻译：集成电路结构，其中包括具有PGO铁电薄膜的电极
公开(公告)号：US06998661B2
公开(公告)日：2006-02-14
申请号：US10385009
申请日：2003-03-10
申请人： Fengyan Zhang , Jer-Shen Maa , Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Fengyan Zhang , Jer-Shen Maa , Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/1136 , H01L31/119
CPC分类号： H01L28/65 , C23C16/40 , H01L21/31691 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75 , Y10T428/24917 , Y10T428/2495
摘要： A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness. An integrated circuit includes a substrate; an electrode deposited on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO2, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O; and a single-phase, c-axis PGO ferroelectric thin film formed on the electrode, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.
摘要翻译：一种在其上形成电极和铁电薄膜的方法，包括制备基板; 在所述基板上沉积电极，其中所述电极由从由铱和铱复合材料组成的材料组取得的材料形成; 并在其上形成单相c轴PGO铁电薄膜，其中铁电薄膜表现出平滑度和均匀的厚度。集成电路包括基板; 沉积在所述基底上的电极，其中所述电极由从由铱和铱复合物组成的材料组中取得的材料形成，其中所述铱复合材料取自由IrO 2 ，Ir-Ta-O，Ir-Ti-O，Ir-Nb-O，Ir-Al-O，Ir-Hf-O，Ir-VO，Ir-Zr-O和Ir-O; 以及形成在电极上的单相c轴PGO铁电薄膜，其中铁电薄膜表现出平滑度和均匀的厚度。

7. 发明授权

US06586260B2 Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same 失效
公开(公告)号：US06586260B2
公开(公告)日：2003-07-01
申请号：US09820078
申请日：2001-03-28
申请人： Fengyan Zhang , Jer-Shen Maa , Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Fengyan Zhang , Jer-Shen Maa , Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L28/65 , C23C16/40 , H01L21/31691 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75 , Y10T428/24917 , Y10T428/2495
摘要： A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness. An integrated circuit includes a substrate; an electrode deposited on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO2, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O; and a single-phase, c-axis PGO ferroelectric thin film formed on the electrode, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.

8. 发明授权

US06372034B1 PGO solutions for the preparation of PGO thin films via spin coating 有权
标题翻译：用于通过旋涂制备PGO薄膜的PGO溶液
公开(公告)号：US06372034B1
公开(公告)日：2002-04-16
申请号：US09687827
申请日：2000-10-12
申请人： Wei-Wei Zhuang , Jer-shen Maa , Fengyan Zhang , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Jer-shen Maa , Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L2122
CPC分类号： H01L21/31691
摘要： A method of preparing a PGO solution for spin coating includes preparing a 2-methoxyethanol organic solvent; adding Pb(OCH3CO)2.3H2O to the organic solvent at ambient temperature and pressure in a nitrogen-filled glaved box to form Pb in methoxyethanol; refluxing the solution in a nitrogen atmosphere at 150° C. for at least two hours; fractionally distilling the refluxed solution at approximately 150° C. to remove all of the water from the solution; cooling the solution to room temperature; determining the Pb concentration of the solution; adding the 2-methoxyethanol solution to the Pb 2-methoxyethanol until a desired Pb concentration is achieved; combining Ge(OR)4, where R is taken the group of Rs consisting of CH2CH3 and CH(CH3)2, and 2-methoxyethanol; and adding Ge(OR)4 2-methoxyethanol to PbO 2-methoxyethanol to form the PGO solution having a predetermined metal ion concentration and a predetermined Pb:Ge molar ration.
摘要翻译：制备用于旋涂的PGO溶液的方法包括制备2-甲氧基乙醇有机溶剂; 在环境温度和压力下，在氮气充填的玻璃箱中加入Pb（OCH 3 CO）2.3H 2 O至有机溶剂中以在甲氧基乙醇中形成Pb; 将溶液在氮气气氛中在150℃下回流至少2小时; 在大约150℃下将回流的溶液分馏，以从溶液中除去所有的水; 将溶液冷却至室温; 测定溶液的Pb浓度; 将2-甲氧基乙醇溶液加入到Pb 2-甲氧基乙醇中直到达到所需的Pb浓度; 组合Ge（OR）4，其中R是由CH 2 CH 3和CH（CH 3）2组成的基团和2-甲氧基乙醇; 并向PbO 2 - 甲氧基乙醇中加入Ge（OR）4 2-甲氧基乙醇以形成具有预定的金属离子浓度和预定的Pb:Ge摩尔比的PGO溶液。

9. 发明申请

US20080171424A1 Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies 审中-公开
标题翻译：使用纳米线和纳米尺度核方法在硅上外延生长GaN和SiC
公开(公告)号：US20080171424A1
公开(公告)日：2008-07-17
申请号：US11653802
申请日：2007-01-16
申请人： Tingkai Li , Jer-Shen Maa , Douglas J. Tweet , Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Tingkai Li , Jer-Shen Maa , Douglas J. Tweet , Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： H01L21/205
CPC分类号： H01L21/02513 , H01L21/02381 , H01L21/0245 , H01L21/02529 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
摘要翻译：在硅衬底上制造缺陷敏感材料的连续层的方法包括制备硅衬底; 在硅衬底上直接形成纳米结构阵列; 在衬底上沉积选择性生长增强层; 平滑选择性生长增强层; 并在纳米结构阵列上生长不连续的缺陷敏感材料层。

10. 发明授权

US06303502B1 MOCVD metal oxide for one transistor memory 失效
标题翻译： MOCVD金属氧化物用于一个晶体管存储器
公开(公告)号：US06303502B1
公开(公告)日：2001-10-16
申请号：US09588940
申请日：2000-06-06
申请人： Sheng Teng Hsu , David R. Evans , Tingkai Li , Jer-shen Maa , Wei-Wei Zhuang
发明人： Sheng Teng Hsu , David R. Evans , Tingkai Li , Jer-shen Maa , Wei-Wei Zhuang
IPC分类号： H01L2144
CPC分类号： H01L21/28291 , H01L29/78391
摘要： A method of fabricating a one-transistor memory includes, on a single crystal silicon substrate, depositing a bottom electrode structure on a gate oxide layer; implanting ions to form a source region and a drain region and activating the implanted ions spin coating the structure with a first ferroelectric layer; depositing a second ferroelectric layer; and annealing the structure to provide a c-axis ferroelectric orientation.
摘要翻译：制造单晶体管存储器的方法包括在单晶硅衬底上，在栅氧化层上沉积底电极结构; 注入离子以形成源极区域和漏极区域并激活注入的离子旋转涂覆第一铁电层的结构; 沉积第二铁电层; 并退火该结构以提供c轴铁电取向。

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