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1. 发明授权

US07175945B2 Focus masking structures, focus patterns and measurements thereof 有权
标题翻译：聚焦掩模结构，聚焦图案及其测量
公开(公告)号：US07175945B2
公开(公告)日：2007-02-13
申请号：US11084556
申请日：2005-03-16
申请人： Walter Dean Mieher , Daniel Wack , Ady Levy
发明人： Walter Dean Mieher , Daniel Wack , Ady Levy
IPC分类号： G03F9/00 , G03C5/00 , G01B11/00
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
摘要翻译：公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。本发明的另一方面涉及随焦点变化而变化的聚焦图案。聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。

2. 发明授权

US06884552B2 Focus masking structures, focus patterns and measurements thereof 有权
标题翻译：聚焦掩模结构，聚焦图案及其测量
公开(公告)号：US06884552B2
公开(公告)日：2005-04-26
申请号：US10291181
申请日：2002-11-07
申请人： Walter Dean Mieher , Daniel Wack , Ady Levy
发明人： Walter Dean Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B7/28 , G03F1/28 , G03F7/20 , G03F7/207 , H01L21/027 , G03F9/00 , G01B11/00 , G03C5/00
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
摘要翻译：公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。本发明的另一方面涉及随焦点变化而变化的聚焦图案。聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。

3. 发明授权

US07181057B2 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
标题翻译：叠加标记，叠加标记设计方法和覆盖测量方法
公开(公告)号：US07181057B2
公开(公告)日：2007-02-20
申请号：US10186324
申请日：2002-06-26
申请人： Michael Adel , Mark Ghinovker , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Michael Adel , Mark Ghinovker , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative position between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The overlay mark includes a plurality of working zones, which are used to calculate alignment between a first and a second layer of the substrate or between a first and a second pattern on a single layer of the substrate. Each of the working zones is positioned within the perimeter of the mark. Each of the working zones represents a different area of the mark. The working zones are configured to substantially fill the perimeter of the mark such that the combined area of the working zones is substantially equal to the total area of the mark.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间或在衬底的单个层上的两个或更多个单独产生的图案之间的相对位置的覆盖标记。覆盖标记包括多个工作区，其用于计算衬底的第一层和第二层之间或衬底的单层上的第一和第二图案之间的对准。每个工作区位于标记的周边。每个工作区域代表标记的不同区域。工作区域构造成基本上填满标记的周边，使得工作区域的组合区域基本上等于标记的总面积。

4. 发明授权

US07068833B1 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
公开(公告)号：US07068833B1
公开(公告)日：2006-06-27
申请号：US09894987
申请日：2001-06-27
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.

5. 发明授权

US06486954B1 Overlay alignment measurement mark 有权
标题翻译：覆盖对齐测量标记
公开(公告)号：US06486954B1
公开(公告)日：2002-11-26
申请号：US09654318
申请日：2000-09-01
申请人： Walter Dean Mieher , Ady Levy
发明人： Walter Dean Mieher , Ady Levy
IPC分类号： G01B1127
CPC分类号： G03F7/70633 , G01B11/002
摘要： An alignment mark comprising a first test zone and a second test zone for measuring the relative position between different layers of a semiconductor device. The alignment mark is used to determine the overlay error between layers of a semiconductor wafer while minimizing measurement inaccuracies caused by semiconductor manufacturing processes. The first test zone includes two sections, one in which test structures are formed on one layer and a second in which test structures are formed on a second layer. Each of these test structures is composed of smaller sub-structures. The second test zone includes two similar sections that are also composed of smaller sub-structures. The first and second test zones are configured so that the section of each test zone formed one layer is adjacent to the section of the other test zone that is formed on the other layer. By forming each of the periodic structures with smaller sized sub-structures, a more accurate measurement of any alignment error may be obtained. Another aspect of the present invention pertains to a method of utilizing the alignment mark so that an overlay measurement may be obtained.
摘要翻译：对准标记包括第一测试区和第二测试区，用于测量半导体器件的不同层之间的相对位置。对准标记用于确定半导体晶片的层之间的重叠误差，同时最小化由半导体制造工艺引起的测量不准确。第一测试区包括两个部分，一个测试结构形成在一个层上，另一个测试结构形成在第二层上。这些测试结构中的每一个都由较小的子结构组成。第二测试区域包括两个类似的部分，它们也由较小的子结构组成。第一和第二测试区被配置成使得形成一层的每个测试区的部分与形成在另一层上的另一测试区的部分相邻。通过用较小尺寸的子结构形成每个周期性结构，可以获得任何对准误差的更准确的测量。本发明的另一方面涉及一种利用对准标记以便可以获得覆盖测量的方法。

6. 发明授权

US07317824B2 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
标题翻译：叠加标记，叠加标记设计方法和覆盖测量方法
公开(公告)号：US07317824B2
公开(公告)日：2008-01-08
申请号：US11394938
申请日：2006-03-30
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的重叠标记。覆盖标记包括至少一个测试图案，用于确定在第一方向上的基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

7. 发明申请

US20090291513A1 OVERLAY MARKS, METHODS OF OVERLAY MARK DESIGN AND METHODS OF OVERLAY MEASUREMENTS 有权
标题翻译： OVERLAY MARKS，OVERLAY MARK设计方法和覆盖测量方法
公开(公告)号：US20090291513A1
公开(公告)日：2009-11-26
申请号：US12533295
申请日：2009-07-31
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： H01L21/66 , H01L23/544
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的覆盖标记以及使用这种重叠标记的方法。在一个实施例中，覆盖标记包括至少一个测试图案，用于在第一方向上确定基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有相对于彼此斜对置且空间偏移的至少两个工作区域。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

8. 发明授权

US08330281B2 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
标题翻译：叠加标记，叠加标记设计方法和覆盖测量方法
公开(公告)号：US08330281B2
公开(公告)日：2012-12-11
申请号：US11830782
申请日：2007-07-30
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： H01L23/544
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的重叠标记。覆盖标记包括至少一个测试图案，用于确定在第一方向上的基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。第一组工作区域通常相对于第二组工作区域成角度，从而形成X形测试图案。

9. 发明授权

US07274814B2 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
标题翻译：叠加标记，叠加标记设计方法和覆盖测量方法
公开(公告)号：US07274814B2
公开(公告)日：2007-09-25
申请号：US11432947
申请日：2006-05-12
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的重叠标记。覆盖标记包括至少一个测试图案，用于确定在第一方向上的基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

10. 发明申请

US20070108368A1 Focus masking structures, focus patterns and measurements thereof 审中-公开
公开(公告)号：US20070108368A1
公开(公告)日：2007-05-17
申请号：US11647793
申请日：2006-12-28
申请人： Walter Mieher , Daniel Wack , Ady Levy
发明人： Walter Mieher , Daniel Wack , Ady Levy
IPC分类号： G02B27/40
CPC分类号： B22D11/10 , B22D11/064 , B22D39/003 , F27D3/14 , F27D19/00 , H02K44/00 , H02K44/04
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.

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