专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07463422B2 Projection exposure apparatus 有权
标题翻译：投影曝光装置
公开(公告)号：US07463422B2
公开(公告)日：2008-12-09
申请号：US11657925
申请日：2007-01-25
申请人： Vladimir Kamenow , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc , David Shafer , Wilhelm Ulrich , Rudolf von Buenau , Hans-Juergen Mann , Alexander Epple
发明人： Vladimir Kamenow , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc , David Shafer , Wilhelm Ulrich , Rudolf von Buenau , Hans-Juergen Mann , Alexander Epple
IPC分类号： G02B17/00
CPC分类号： G02B27/0012 , G02B1/02 , G02B17/08 , G03F7/70225 , G03F7/70966 , G03F7/70975
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子KLT / LH。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子KLT / LH高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

2. 发明申请

US20070195423A1 Method of determining lens materials for a projection exposure apparatus 有权
公开(公告)号：US20070195423A1
公开(公告)日：2007-08-23
申请号：US11657925
申请日：2007-01-25
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc , David Shafer , Wilhelm Ulrich , Rudolf Buenau , Hans-Juergen Mann , Alexander Epple
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc , David Shafer , Wilhelm Ulrich , Rudolf Buenau , Hans-Juergen Mann , Alexander Epple
IPC分类号： G02B3/00
CPC分类号： G02B27/0012 , G02B1/02 , G02B17/08 , G03F7/70225 , G03F7/70966 , G03F7/70975
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.

3. 发明授权

US07239450B2 Method of determining lens materials for a projection exposure apparatus 有权
标题翻译：确定投影曝光装置的透镜材料的方法
公开(公告)号：US07239450B2
公开(公告)日：2007-07-03
申请号：US11181694
申请日：2005-07-14
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
IPC分类号： G02B3/00
CPC分类号： G03F7/70891 , G02B1/02 , G02B1/08 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子K LT / LH 。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子K LT / LH <>高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

4. 发明申请

US20060109560A1 Method of determining lens materials for a projection exposure apparatus 有权
标题翻译：确定投影曝光装置的透镜材料的方法
公开(公告)号：US20060109560A1
公开(公告)日：2006-05-25
申请号：US11181694
申请日：2005-07-14
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
IPC分类号： G02B3/00
CPC分类号： G03F7/70891 , G02B1/02 , G02B1/08 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子K LT / LH 。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子K LT / LH <>高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

5. 发明授权

US07982854B2 Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system 有权
标题翻译：投影曝光系统，借助于这种投影曝光系统和适于在这种系统中使用的偏振光学元件制造微结构结构构件的方法
公开(公告)号：US07982854B2
公开(公告)日：2011-07-19
申请号：US11911454
申请日：2006-04-12
申请人： Hans-Juergen Mann , Wolfgang Singer , Toralf Gruner , Olaf Dittmann , Michael Totzeck
发明人： Hans-Juergen Mann , Wolfgang Singer , Toralf Gruner , Olaf Dittmann , Michael Totzeck
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译：本发明涉及一种投影曝光系统，特别涉及微光刻技术。根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。至少一个偏振光学元件设置在光源和部件之间的光束路径上。

6. 发明申请

US20090021830A1 PROJECTION LENS OF A MICROLITHOGRAPHIC EXPOSURE SYSTEM 审中-公开
标题翻译：微波曝光系统的投影镜头
公开(公告)号：US20090021830A1
公开(公告)日：2009-01-22
申请号：US12132796
申请日：2008-06-04
申请人： Michael Totzeck , Susanne Beder , Wilfried Clauss , Heiko Feldmann , Daniel Kraehmer , Aurelian Dodoc
发明人： Michael Totzeck , Susanne Beder , Wilfried Clauss , Heiko Feldmann , Daniel Kraehmer , Aurelian Dodoc
IPC分类号： G02B17/08 , G02B27/28 , G02B27/18
CPC分类号： G02B5/3083 , G02B27/286 , G03F7/70308 , G03F7/70566 , G03F7/70966
摘要： In some embodiments, the disclosure provides a projection lens configured to configured to image radiation from an object plane of the projection lens to an image plane of the projection lens. The projection lens can, for example, be used in a microlithographic projection exposure apparatus. The projection lens includes a last lens on the image plane side. The last lens includes at least one intrinsically birefringent material. The material can be, for example, magnesium oxide, a garnet, lithium barium fluoride and/or a spinel. The last lens can have a thickness d which satisfies the condition 0.8*y0, max
摘要翻译：在一些实施例中，本公开提供一种投影透镜，其被配置为被配置为将来自投影透镜的物平面的辐射成像到投影透镜的像平面。投影透镜例如可以用在微光刻投影曝光装置中。投影透镜在图像平面侧包括最后一个透镜。最后一个透镜包括至少一个本质上双折射材料。该材料可以是例如氧化镁，石榴石，氟化锂钡和/或尖晶石。最后一个透镜可以具有满足条件0.8 * y0，max

7. 发明申请

US20080204877A1 ILLUMINATION SYSTEM OR PROJECTION LENS OF A MICROLITHOGRAPHIC EXPOSURE SYSTEM 有权
标题翻译：微观曝光系统的照明系统或投影镜头
公开(公告)号：US20080204877A1
公开(公告)日：2008-08-28
申请号：US12042621
申请日：2008-03-05
申请人： Michael Totzeck , Susanne Beder , Wilfried Clauss , Heiko Feldmann , Daniel Kraehmer , Aurelian Dodoc
发明人： Michael Totzeck , Susanne Beder , Wilfried Clauss , Heiko Feldmann , Daniel Kraehmer , Aurelian Dodoc
IPC分类号： G02B27/28
CPC分类号： G02B5/3083 , G02B27/286 , G03F7/70566 , G03F7/70966
摘要： In some embodiments, the disclosure provides an optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, having an optical system axis and at least one element group including three birefringent elements each of which includes optically uniaxial material and having an aspheric surface, wherein a first birefringent element of the group has a first orientation of its optical crystal axis, a second birefringent element of the group has a second orientation of its optical crystal axis, wherein the second orientation can be described as emerging from a rotation of the first orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element of the group has a third orientation of its optical crystal axis, wherein the third orientation can be described as emerging from a rotation of the second orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof.
摘要翻译：在一些实施例中，本公开提供了一种光学系统，特别是微光刻曝光系统的照明系统或投影透镜，其具有光学系统轴线和包括三个双折射元件的至少一个元件组，每个元件组包括光学单轴材料并具有非球面表面，其中该组的第一双折射元件具有其光学晶体轴的第一取向，该组的第二双折射元件具有其光学晶轴的第二取向，其中第二取向可被描述为从第一取向的旋转，旋转不对应于围绕光学系统轴的旋转90°的角度或其整数倍，并且该组的第三双折射元件具有其光学晶轴的第三取向，其中，可以将第三取向描述为从第二取向旋转而出现，旋转不对准以围绕光学系统轴旋转90°的角度或其整数倍。

8. 发明授权

US08031326B2 Illumination system or projection lens of a microlithographic exposure system 有权
标题翻译：微光曝光系统的照明系统或投影透镜
公开(公告)号：US08031326B2
公开(公告)日：2011-10-04
申请号：US12042621
申请日：2008-03-05
申请人： Michael Totzeck , Susanne Beder , Wilfried Clauss , Heiko Feldmann , Daniel Kraehmer , Aurelian Dodoc
发明人： Michael Totzeck , Susanne Beder , Wilfried Clauss , Heiko Feldmann , Daniel Kraehmer , Aurelian Dodoc
IPC分类号： G03B27/54 , G03B27/72
CPC分类号： G02B5/3083 , G02B27/286 , G03F7/70566 , G03F7/70966
摘要： In some embodiments, the disclosure provides an optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, having an optical system axis and at least one element group including three birefringent elements each of which includes optically uniaxial material and having an aspheric surface, wherein a first birefringent element of the group has a first orientation of its optical crystal axis, a second birefringent element of the group has a second orientation of its optical crystal axis, wherein the second orientation can be described as emerging from a rotation of the first orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element of the group has a third orientation of its optical crystal axis, wherein the third orientation can be described as emerging from a rotation of the second orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof.
摘要翻译：在一些实施例中，本公开提供了一种光学系统，特别是微光刻曝光系统的照明系统或投影透镜，其具有光学系统轴线和包括三个双折射元件的至少一个元件组，每个元件组包括光学单轴材料并具有非球面表面，其中该组的第一双折射元件具有其光学晶体轴的第一取向，该组的第二双折射元件具有其光学晶轴的第二取向，其中第二取向可被描述为从第一取向的旋转，旋转不对应于围绕光学系统轴的旋转90°的角度或其整数倍，并且该组的第三双折射元件具有其光学晶轴的第三取向，其中，可以将第三取向描述为从第二取向旋转而出现，旋转不对准以围绕光学系统轴旋转90°的角度或其整数倍。

9. 发明申请

US20090284831A1 PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置的投影目标
公开(公告)号：US20090284831A1
公开(公告)日：2009-11-19
申请号：US12330980
申请日：2008-12-09
申请人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
发明人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
IPC分类号： G02B13/14 , G02B27/28 , G02B3/00
CPC分类号： G03F7/70341 , G02B5/3091 , G02B27/0025 , G03F7/70308
摘要： A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element (L3) with an index of refraction greater than 1.6. This element (L3) has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume (L3′) which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.
摘要翻译：微光刻投影曝光装置的投影物镜具有折射率大于1.6的高折射率折射光学元件（L3）。该元件（L3）具有在体积上变化的体积和材料相关的光学性质。该光学特性的变化导致物镜的像差。在一个实施例中，提供至少4个光学表面，其布置在与折射光学元件的体积光学共轭的至少一个体积（L3'）中。每个光学表面包括至少一个校正装置，例如具有局部变化特性的表面变形或双折射层，其至少部分地校正由光学性质的变化引起的像差。

10. 发明申请

US20080212060A1 Method for Determining Intensity Distribution in the Image Plane of a Projection Exposure Arrangement 有权
标题翻译：确定投影曝光安排图像平面中强度分布的方法
公开(公告)号：US20080212060A1
公开(公告)日：2008-09-04
申请号：US12065451
申请日：2006-09-02
申请人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
发明人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
IPC分类号： G03B27/54
CPC分类号： G03F7/70666 , G03F7/70308
摘要： A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.
摘要翻译：一种用于确定投影曝光装置的焦平面中的强度分布的方法，其中大面积成像系统被仿真并且来自样品的光由仿真成像系统在局部分辨率检测器上表示。还描述了用于执行该方法和仿真装置的装置。由于考虑到系统变迹，本发明使得可以提高再现质量。本发明的方法包括确定输出光瞳中的积分幅度分布，将积分幅度分布与预定的变迹校正相结合，并根据修改的幅度分布来计算校正的变迹图像。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式