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1. 发明授权

US09217932B2 Projection objective for microlithography 有权
标题翻译：微光刻的投影目标
公开(公告)号：US09217932B2
公开(公告)日：2015-12-22
申请号：US13537892
申请日：2012-06-29
申请人： Bernd Geh
发明人： Bernd Geh
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/702 , G03F7/703 , G03F7/70783
摘要： A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured so that a defined image field curvature of the projection objective is set such that an object surface that is curved convexly with respect to the projection objective is imaged into a planar image surface. Such projection objective, with a suitable setting of the object surface curvature, avoids the disturbing effect on the image quality that would otherwise result from gravitation-dictated bending of a mask.
摘要翻译：用于将布置在投影物镜的物体表面中的图案成像成具有缩小的成像刻度的投影物镜的图像表面的投影物镜具有沿着投影物镜的光轴布置的多个光学元件，设置投影物镜的定义的图像场曲率，使得相对于投影物镜凸出弯曲的物体表面被成像为平面图像表面。具有对象表面曲率的适当设置的这种投影物镜避免了由于掩模的重力指定弯曲而导致的图像质量的干扰效应。

2. 发明授权

US08120748B2 Lithographic processing optimization based on hypersampled correlations 有权
标题翻译：基于超采样相关的平滑处理优化
公开(公告)号：US08120748B2
公开(公告)日：2012-02-21
申请号：US11709188
申请日：2007-02-22
申请人： Bernd Geh , Roger Irwin , Eric Anthony Janda , David Merritt Phillips
发明人： Bernd Geh , Roger Irwin , Eric Anthony Janda , David Merritt Phillips
IPC分类号： G03B27/52 , G03B27/42 , G03B27/44 , G03B27/32
CPC分类号： G03F7/70625 , G03F7/70425
摘要： A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.
摘要翻译：本文给出了优化平版印刷加工以实现基板均匀性的方法。在一个实施例中，该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。该衍生包括具有图案的基板的微曝光子场，在各种目标条件下处理基板，确定子场的光致抗蚀剂相关特性（例如，Bossung曲率），以及提取关于子场特性和不同目标的相关信息处理条件将目标条件作为子场特征的函数进行关联。然后，该方法检测在生产级处理条件下处理的微暴露的随后的衬底中的不均匀性，并利用相关信息来调整生产水平条件并实现衬底上的均匀性。

3. 发明授权

US07818151B2 Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool 有权
标题翻译：用于获得光刻模拟工具的短程火炬模型参数的方法，程序产品和设备
公开(公告)号：US07818151B2
公开(公告)日：2010-10-19
申请号：US11415423
申请日：2006-05-02
申请人： Tamer Coskun , Sangbong Park , Jang Fung Chen , Bernd Geh
发明人： Tamer Coskun , Sangbong Park , Jang Fung Chen , Bernd Geh
IPC分类号： G06F17/50
CPC分类号： G03F7/70941 , G03F7/705
摘要： A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.
摘要翻译：公开了一种获得表示短距离火炬的短距离火炬模型参数的过程，其降低了由光刻工具产生的图像的对比度。从图像中测量短程光晕，以获得测量的短距离闪光数据。基于短距离火炬模型参数进行模拟，以获得模拟的短距离火炬数据。将模拟的短程火炬数据与测量的短距离火炬数据进行比较。根据比较结果确定模拟中使用的短程火炬模型参数是否合适。如果用于模拟的短距离火炬模型参数不合适，则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。

4. 发明申请

US20070260437A1 Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool 有权
标题翻译：用于获得光刻模拟工具的短程火炬模型参数的方法，程序产品和设备
公开(公告)号：US20070260437A1
公开(公告)日：2007-11-08
申请号：US11415423
申请日：2006-05-02
申请人： Tamer Coskun , Sangbong Park , Jang Chen , Bernd Geh
发明人： Tamer Coskun , Sangbong Park , Jang Chen , Bernd Geh
IPC分类号： G06G7/48
CPC分类号： G03F7/70941 , G03F7/705
摘要： A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.
摘要翻译：公开了一种获得表示短距离火炬的短距离火炬模型参数的过程，其降低了由光刻工具产生的图像的对比度。从图像中测量短程光晕，以获得测量的短距离闪光数据。基于短距离火炬模型参数进行模拟，以获得模拟的短距离火炬数据。将模拟的短程火炬数据与测量的短距离火炬数据进行比较。根据比较结果确定模拟中使用的短程火炬模型参数是否合适。如果用于模拟的短距离火炬模型参数不合适，则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。

5. 发明申请

US20060164621A1 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US20060164621A1
公开(公告)日：2006-07-27
申请号：US11041873
申请日：2005-01-25
申请人： Michael Totzeck , Bernd Geh , Skip Miller
发明人： Michael Totzeck , Bernd Geh , Skip Miller
IPC分类号： G03B27/72
CPC分类号： G03F7/70966 , G03F7/70566
摘要： A lithographic apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern, a substrate table configured to hold a substrate and a projection system configured to project the beam as patterned onto a target portion of the substrate. The lithographic apparatus further includes a polarization modifier disposed in a path of the beam. The polarization modifier comprises a material having a radially varying birefringence.
摘要翻译：光刻设备包括被配置为保持图案形成装置的支撑结构，所述图案形成装置被配置为根据期望的图案对辐射束进行图案化;衬底台，其被配置为保持衬底;以及投影系统，被配置为将所述光束作为图案投影到基板的目标部分。光刻设备还包括设置在光束的路径中的偏振修正器。偏振调节剂包括具有径向变化的双折射的材料。

6. 发明授权

US06934011B2 Method for optimizing the image properties of at least two optical elements as well as methods for optimizing the image properties of at least three optical elements 失效
公开(公告)号：US06934011B2
公开(公告)日：2005-08-23
申请号：US10697811
申请日：2003-10-30
申请人： Bernd Geh , Paul Gräupner , Thomas Stammler , Dirk Stenkamp , Jochen Stühler , Klaus Wurmbrand
发明人： Bernd Geh , Paul Gräupner , Thomas Stammler , Dirk Stenkamp , Jochen Stühler , Klaus Wurmbrand
IPC分类号： G02B7/02 , G01B11/00 , G02B13/00 , G02B27/00 , G03F7/20 , G03F7/207 , H01L21/027 , G03B27/32
CPC分类号： G03F7/706 , G01M11/0207 , G01M11/0242 , G01M11/0257 , G02B27/0012 , G03F7/70225 , G03F7/70258 , G03F7/70666
摘要： In order to optimize the image properties of several optical elements of which at least one is moved relative to at least one stationary optical element, the overall image defect resulting from the interaction of all optical elements is first of all measured. This is represented as a linear combination of the base functions of an orthogonal function set. The movable element is then moved to a new measurement position and the overall image defect is measured once again. After the linear combination representation of the new overall image defect, the image defects of the movable element and of the stationary element are calculated from the data thereby obtained. With only one movable optical element a target position in which the overall image defect is minimized can be directly calculated and adjusted there from. If several movable optical elements are available, methods are given for the efficient determination of the respective target position.

7. 发明申请

US20050106479A1 Lithographic processing optimization based on hypersampled correlations 有权
标题翻译：基于超采样相关的平滑处理优化
公开(公告)号：US20050106479A1
公开(公告)日：2005-05-19
申请号：US10715109
申请日：2003-11-18
申请人： Bernd Geh , Roger Irwin , Eric Janda , David Phillips
发明人： Bernd Geh , Roger Irwin , Eric Janda , David Phillips
IPC分类号： H01L21/027 , G03F7/00 , G03F7/20
CPC分类号： G03F7/70625 , G03F7/70425
摘要： A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate-processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.
摘要翻译：本文给出了优化平版印刷加工以实现基板均匀性的方法。在一个实施例中，该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。衍生包括具有图案的基板的微曝光子场，在各种目标条件下处理基板，确定子场的光致抗蚀剂相关特性（例如，Bossung曲率），以及提取关于子场特性和不同目标的相关信息处理条件将目标条件作为子场特征的函数进行关联。然后，该方法在生产级处理条件下的微曝光后续衬底处理中检测不均匀性，并利用相关信息来调整生产水平条件并实现衬底上的均匀性。

8. 发明授权

US08212988B2 Projection objective for microlithography 有权
标题翻译：微光刻的投影目标
公开(公告)号：US08212988B2
公开(公告)日：2012-07-03
申请号：US11658574
申请日：2005-08-03
申请人： Bernd Geh
发明人： Bernd Geh
IPC分类号： G03B27/42
CPC分类号： G03F7/702 , G03F7/703 , G03F7/70783
摘要： A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured in such a way that a defined image field curvature of the projection objective is set in such a way that an object surface that is curved convexly with respect to the projection objective can be imaged into a planar image surface. What can be achieved given a suitable setting of the object surface curvature is that a gravitation-dictated bending of a mask does not have a disturbing effect on the imaging quality.
摘要翻译：用于将布置在投影物体的物体表面中的图案成像成具有缩小成像刻度的投影物镜的图像表面的投影物镜具有沿着投影物镜的光轴布置的多个光学元件，使得投影物镜的定义的图像场曲率被设置为使得相对于投影物体凸出地弯曲的物体表面可以成像为平面图像表面的方式。给定对象表面曲率的适当设置可以实现什么是掩模的重力指定弯曲对成像质量没有干扰的影响。

9. 发明申请

US20080225260A1 Illuminator for a lithographic apparatus and method 有权
标题翻译：光刻设备和方法的照明器
公开(公告)号：US20080225260A1
公开(公告)日：2008-09-18
申请号：US11724331
申请日：2007-03-15
申请人： Michel Fransois Hubert Klaassen , Hendrikus Robertus Marie Van Greevenbroek , Bernd Geh , Emil Peter Schmitt-Weaver
发明人： Michel Fransois Hubert Klaassen , Hendrikus Robertus Marie Van Greevenbroek , Bernd Geh , Emil Peter Schmitt-Weaver
IPC分类号： G03B27/32 , G03B27/72
CPC分类号： G03F7/701 , G03F7/70566
摘要： An illuminator for a lithographic apparatus, the illuminator including an illumination mode defining element and a plurality of polarization modifiers, the polarization modifiers being moveable into or out of partial intersection with a radiation beam having an angular and spatial distribution as governed by an illumination mode defining element.
摘要翻译：一种用于光刻设备的照明器，所述照明器包括照明模式限定元件和多个偏振调节器，所述偏振调节器可移动到与具有角度和空间分布的辐射束的部分交叉中，所述辐射束具有由限定元件。

10. 发明授权

US07198873B2 Lithographic processing optimization based on hypersampled correlations 有权
标题翻译：基于超采样相关的平滑处理优化
公开(公告)号：US07198873B2
公开(公告)日：2007-04-03
申请号：US10715109
申请日：2003-11-18
申请人： Bernd Geh , Roger Henry Irwin , Eric Anthony Janda , David Merritt Phillips
发明人： Bernd Geh , Roger Henry Irwin , Eric Anthony Janda , David Merritt Phillips
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70425
摘要： A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate-processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.
摘要翻译：本文给出了优化平版印刷加工以实现基板均匀性的方法。在一个实施例中，该方法包括导出指示在预定目标处理条件下处理的多个晶片衬底的光致抗蚀剂行为的超采样相关信息。衍生包括具有图案的基板的微曝光子场，在各种目标条件下处理基板，确定子场的光致抗蚀剂相关特性（例如，Bossung曲率），以及提取关于子场特性和不同目标的相关信息处理条件将目标条件作为子场特征的函数进行关联。然后，该方法在生产级处理条件下的微曝光后续衬底处理中检测不均匀性，并利用相关信息来调整生产水平条件并实现衬底上的均匀性。

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