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1. 发明申请

US20070166832A1 APPARATUS, METHODS, AND SYSTEMS HAVING GAS SENSOR WITH CATALYTIC GATE AND VARIABLE BIAS 审中-公开
标题翻译：具有气体传感器和可变偏置气体传感器的装置，方法和系统
公开(公告)号：US20070166832A1
公开(公告)日：2007-07-19
申请号：US11687872
申请日：2007-03-19
申请人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
发明人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
IPC分类号： G01N27/00
CPC分类号： G01N27/4141 , Y10T436/218
摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.
摘要翻译：根据一些实施例，基于电子学的物理气体传感器包括半导体层，并且至少一个触点电耦合到半导体层。还提供了具有当栅极暴露于分析物时变化的性质的催化栅极和来自电压源的可变偏压。

2. 发明申请

US20060270053A1 Apparatus, methods, and systems having gas sensor with catalytic gate and variable bias 审中-公开
标题翻译：具有气体传感器和催化栅极和可变偏压的装置，方法和系统
公开(公告)号：US20060270053A1
公开(公告)日：2006-11-30
申请号：US11137845
申请日：2005-05-26
申请人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
发明人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
IPC分类号： G01N33/00 , G01N25/26
CPC分类号： G01N27/4141 , Y10T436/218
摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.
摘要翻译：根据一些实施例，基于电子学的物理气体传感器包括半导体层，并且至少一个触点电耦合到半导体层。还提供了具有当栅极暴露于分析物时变化的性质的催化栅极和来自电压源的可变偏压。

3. 发明申请

US20070157703A1 APPARATUS, METHODS, AND SYSTEMS HAVING GAS SENSOR WITH CATALYTIC GATE AND VARIABLE BIAS 审中-公开
公开(公告)号：US20070157703A1
公开(公告)日：2007-07-12
申请号：US11687880
申请日：2007-03-19
申请人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
发明人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
IPC分类号： G01N7/00 , G01N9/00
CPC分类号： G01N27/4141 , Y10T436/218
摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

4. 发明申请

US20050097941A1 Gas sensor device 有权
标题翻译：气体传感器装置
公开(公告)号：US20050097941A1
公开(公告)日：2005-05-12
申请号：US10706767
申请日：2003-11-12
申请人： Peter Sandvik , Vinayak Tilak , Jesse Tucker , Stanton Weaver , David Shaddock , Jonathan Male , John Lemmon , Mark Woodmansee , Venkatesan Manivannan , Deborah Haitko
发明人： Peter Sandvik , Vinayak Tilak , Jesse Tucker , Stanton Weaver , David Shaddock , Jonathan Male , John Lemmon , Mark Woodmansee , Venkatesan Manivannan , Deborah Haitko
IPC分类号： G01N27/414 , G01N33/00 , G01N7/00
CPC分类号： G01N27/4141 , G01N33/0037 , Y02A50/245
摘要： A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.
摘要翻译：一种气体传感器装置，包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆接触层和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅，金刚石，III族氮化物，III族氮化物的合金，氧化锌及其任何组合的材料。

5. 发明申请

US20070144236A1 Sensor Device For Detection of Dissolved Hydrocarbon Gases in Oil Filled High-Voltage Electrical Equipment 失效
标题翻译：用于检测充油高压电气设备中溶解的烃类气体的传感器装置
公开(公告)号：US20070144236A1
公开(公告)日：2007-06-28
申请号：US11683739
申请日：2007-03-08
申请人： Edward Stokes , Peter Sandvik , Vinayak Tilak , Jeffrey Fedison , Elena Babes-Dornea , Renyan Qin , James Rose , Stanton Weaver
发明人： Edward Stokes , Peter Sandvik , Vinayak Tilak , Jeffrey Fedison , Elena Babes-Dornea , Renyan Qin , James Rose , Stanton Weaver
IPC分类号： G01N27/00
CPC分类号： G01N33/2841 , G01N27/4141
摘要： A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.
摘要翻译：一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。所述器件包括半导体衬底，沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。半导体衬底包括GaN，SiC，AlN，InN，AlGaN，InGaN和AlInGaN中的一种。一种用于感测电气设备的充满油的储存器中的气体的方法，包括提供传感器装置，将传感器装置浸入充满油的储存器中，允许从油中排出的气体与一个或多个催化金属栅极 - 电极，当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

6. 发明申请

US20130026559A1 SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME 有权
标题翻译：硅碳化硅晶胞结构及其形成方法
公开(公告)号：US20130026559A1
公开(公告)日：2013-01-31
申请号：US13190723
申请日：2011-07-26
申请人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
发明人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/088 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.
摘要翻译：在一个实施例中，本发明包括一个包含单个MOSFET单元的MOSFET。每个单元包括形成在孔内的U形孔（228）（P型）和两个平行源（260）（N型）。多个源极（262）（掺杂N）在多个位置连接源极（260）。两个梯级（262）之间的区域包括主体（252）（P型）。这些特征形成在形成在N型衬底（216）上的N型外延层（220）上。接触件（290）跨越并接触多个源极（262）和主体（252）。栅极氧化物和栅极接触覆盖第一阱的支腿和第二相邻阱的支路，响应于栅极电压而反转导电性。 MOSFET包括多个这些单元以获得期望的低通道电阻。在制造过程的几个状态下使用自对准技术形成单元区域。

7. 发明申请

US20050098844A1 Detection system including avalanche photodiode for use in harsh environments 失效
标题翻译：检测系统包括用于恶劣环境的雪崩光电二极管
公开(公告)号：US20050098844A1
公开(公告)日：2005-05-12
申请号：US10994980
申请日：2004-11-19
申请人： Peter Sandvik , Dale Brown , Stephen Arthur , Kevin Matocha , James Kretchmer
发明人： Peter Sandvik , Dale Brown , Stephen Arthur , Kevin Matocha , James Kretchmer
IPC分类号： G01J1/02 , H01J20060101 , H01L31/0232 , H01L31/0248 , H01L31/0304 , H01L31/0312 , H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/107 , H01L31/113 , H01L31/115
CPC分类号： H01L31/02322 , H01L31/02161 , H01L31/03044 , H01L31/0312 , H01L31/035281 , H01L31/107 , H01L31/115
摘要： An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.
摘要翻译：本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。本发明的另一方面涉及使用GaN材料制造的APD器件。根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。

8. 发明授权

US08377756B1 Silicon-carbide MOSFET cell structure and method for forming same 有权
标题翻译：碳化硅MOSFET单元结构及其形成方法
公开(公告)号：US08377756B1
公开(公告)日：2013-02-19
申请号：US13190723
申请日：2011-07-26
申请人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
发明人： Stephen Daley Arthur , Kevin Matocha , Peter Sandvik , Zachary Stum , Peter Losee , James McMahon
IPC分类号： H01L29/10 , H01L29/76
CPC分类号： H01L27/088 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.
摘要翻译：在一个实施例中，本发明包括一个包含单个MOSFET单元的MOSFET。每个单元包括形成在孔内的U形孔（228）（P型）和两个平行源（260）（N型）。多个源极（262）（掺杂N）在多个位置连接源极（260）。两个梯级（262）之间的区域包括主体（252）（P型）。这些特征形成在形成在N型衬底（216）上的N型外延层（220）上。接触件（290）跨越并接触多个源极（262）和主体（252）。栅极氧化物和栅极接触覆盖第一阱的支腿和第二相邻阱的支路，响应于栅极电压而反转导电性。 MOSFET包括多个这些单元以获得期望的低通道电阻。在制造过程的几个状态下使用自对准技术形成单元区域。

9. 发明申请

US20070086916A1 Faceted structure, article, sensor device, and method 审中-公开
标题翻译：方形结构，制品，传感器装置和方法
公开(公告)号：US20070086916A1
公开(公告)日：2007-04-19
申请号：US11480185
申请日：2006-06-30
申请人： Steven LeBoeuf , Peter Sandvik , Radislav Potyrailo
发明人： Steven LeBoeuf , Peter Sandvik , Radislav Potyrailo
IPC分类号： G01N21/00
CPC分类号： G01N21/6489 , B82Y30/00 , G01N21/77
摘要： A faceted structure is provided that includes a crystalline composition comprising a metal nitride. The metal comprises one or more of aluminum, boron, indium, or gallium. The crystalline composition has at least one exposed surface that is a grain boundary, an etched surface, or a naturally formed facet, and the surface has the same crystallographic orientation of a substrate on which the crystalline composition is grown. A sensor device is provided that includes a faceted structure. Associated methods of making and using the faceted structure in a sensor device are provided.
摘要翻译：提供了一种分面结构，其包括包含金属氮化物的结晶组合物。金属包括铝，硼，铟或镓中的一种或多种。所述结晶组合物具有至少一个作为晶界，暴露的表面或天然形成的刻面的暴露表面，并且所述表面具有与其上生长所述结晶组合物的基底相同的晶体取向。提供了一种传感器装置，其包括小平面结构。提供了在传感器装置中制作和使用刻面结构的相关方法。

10. 发明申请

US20050087884A1 Flip-chip light emitting diode 失效
标题翻译：倒装芯片发光二极管
公开(公告)号：US20050087884A1
公开(公告)日：2005-04-28
申请号：US10693126
申请日：2003-10-24
申请人： Edward Stokes , Mark D'Evelyn , Stanton Weaver , Peter Sandvik , Abasifreke Ebong , Xian-an Cao , Steven LeBoeuf , Nikhil Taskar
发明人： Edward Stokes , Mark D'Evelyn , Stanton Weaver , Peter Sandvik , Abasifreke Ebong , Xian-an Cao , Steven LeBoeuf , Nikhil Taskar
IPC分类号： H01L23/48 , H01L33/38 , H01L33/40
CPC分类号： H01L33/405 , H01L33/387 , H01L2933/0083
摘要： A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).
摘要翻译：倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化以限定装置台面（30,30'，30“）。反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触，设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

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