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1. 发明授权

US07093211B1 Techniques for modeling current spreading uniformity in light emitting diodes 失效
标题翻译：用于建模发光二极管中电流扩散均匀性的技术
公开(公告)号：US07093211B1
公开(公告)日：2006-08-15
申请号：US10700074
申请日：2003-11-03
申请人： Evan Downey , Abasifreke Ebong
发明人： Evan Downey , Abasifreke Ebong
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G06F2217/78
摘要： Techniques for automatically generating three dimensional geometric circuit models from a computer aided design (CAD) of a light emitting diode (LED) device. The models may comprise a robust netlist that may be executed using circuit simulation packages. The spatial positioning of each element in the design is preserved during simulation, such that simulation output data can be used to reconstruct a geometric rendition or map of the electrical current flowing through the LED device. The output data from the circuit simulation may then used to reconstruct a three-dimensional rendition of the current spreading uniformity across the design and a quantitative value for the uniformity may be obtained. Using the present techniques, a designer can predict the current spreading uniformity for any particular LED layout, isolate and correct current crowding areas, and reevaluate the design to meet uniformity specifications.
摘要翻译：用于从发光二极管（LED）装置的计算机辅助设计（CAD）自动生成三维几何电路模型的技术。这些模型可以包括可以使用电路仿真包执行的稳健网表。设计中每个元件的空间定位在仿真期间被保留，使得仿真输出数据可用于重构流过LED器件的电流的几何再现或映射。然后可以使用来自电路仿真的输出数据来重建跨设计的电流扩展均匀性的三维解释，并且可以获得均匀性的定量值。使用本技术，设计人员可以预测任何特定LED布局的电流扩展均匀性，隔离和纠正当前拥挤区域，并重新评估设计以满足均匀性规格。

2. 发明申请

US20060071219A1 Monolithic array for solid state ultraviolet light emitters 有权
公开(公告)号：US20060071219A1
公开(公告)日：2006-04-06
申请号：US10950029
申请日：2004-09-24
申请人： Robert Wojnarowski , Stanton Weaver , Abasifreke Ebong , Xian An Cao , Steven LeBoeuf , Larry Rowland , Stephen Arthur
发明人： Robert Wojnarowski , Stanton Weaver , Abasifreke Ebong , Xian An Cao , Steven LeBoeuf , Larry Rowland , Stephen Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/32
摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

3. 发明申请

US20090007965A1 SOLAR CELL DEVICE HAVING AMORPHOUS SILICON LAYERS 审中-公开
标题翻译：具有非晶硅层的太阳能电池装置
公开(公告)号：US20090007965A1
公开(公告)日：2009-01-08
申请号：US12138165
申请日：2008-06-12
申请人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
发明人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
IPC分类号： H01L31/0376
CPC分类号： H01L31/0288 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
摘要翻译：公开了装置，太阳能电池结构及其制造方法。

4. 发明申请

US20080241986A1 METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING AMORPHOUS SILICON LAYERS 审中-公开
标题翻译：用于制造具有非晶硅层的硅太阳能电池结构的方法
公开(公告)号：US20080241986A1
公开(公告)日：2008-10-02
申请号：US12138105
申请日：2008-06-12
申请人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
发明人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
IPC分类号： H01L31/18
CPC分类号： H01L31/0288 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
摘要翻译：公开了装置，太阳能电池结构及其制造方法。

5. 发明申请

US20060207647A1 High efficiency inorganic nanorod-enhanced photovoltaic devices 审中-公开
标题翻译：高效无机纳米棒增强型光伏器件
公开(公告)号：US20060207647A1
公开(公告)日：2006-09-21
申请号：US11081967
申请日：2005-03-16
申请人： Loucas Tsakalakos , Ji-Ung Lee , Charles Korman , Steven Leboeuf , Abasifreke Ebong , Robert Wojnarowski , Alok Srivastava , Oleg Sulima
发明人： Loucas Tsakalakos , Ji-Ung Lee , Charles Korman , Steven Leboeuf , Abasifreke Ebong , Robert Wojnarowski , Alok Srivastava , Oleg Sulima
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/035227 , H01L31/1085
摘要： The present invention is directed to photovoltaic devices comprising nanostructured materials, wherein such photovoltaic devices are comprised exclusively of inorganic components. Depending on the embodiment, such nanostructured materials are either 1-dimensional nanostructures or branched nanostructures, wherein such nanostructures are used to enhance the efficiency of the photovoltaic device, particularly for solar cell applications. Additionally, the present invention is also directed at methods of making and using such devices.
摘要翻译：本发明涉及包含纳米结构材料的光伏器件，其中这种光伏器件仅由无机成分组成。根据实施方案，这种纳米结构材料是一维纳米结构或支化纳米结构，其中这种纳米结构用于增强光电器件的效率，特别是对于太阳能电池应用。另外，本发明还涉及制造和使用这些装置的方法。

6. 发明申请

US20060289386A1 Etchant, method of etching, laminate formed thereby, and device 有权
标题翻译：蚀刻剂，蚀刻方法，由此形成的层压体和装置
公开(公告)号：US20060289386A1
公开(公告)日：2006-12-28
申请号：US11167719
申请日：2005-06-27
申请人： Steven Tysoe , Steven LeBoeuf , Mark D'Evelyn , Venkat Venkataramani , Vinayak Tilak , Jeffrey Fortin , Charles Becker , Stephen Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert Wojnarowski , Abasifreke Ebong
发明人： Steven Tysoe , Steven LeBoeuf , Mark D'Evelyn , Venkat Venkataramani , Vinayak Tilak , Jeffrey Fortin , Charles Becker , Stephen Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert Wojnarowski , Abasifreke Ebong
IPC分类号： B44C1/22 , C09K13/00 , G01L9/00
CPC分类号： H01L21/31111
摘要： An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
摘要翻译：提供了包括卤化盐的蚀刻剂，例如Cryolite（Na 3 AlF 6）或四氟硼酸钾（KBF 4 N 4）。盐可以以足以蚀刻基材的量存在于蚀刻剂中，并且可以具有大于约200摄氏度的熔体温度。湿蚀刻的方法可以包括使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述支撑层可以包括氧化铝; 或使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述蚀刻剂可以包括冰晶石（Na 3 AlF 6 N），四氟硼酸钾（KBF 4）或两者; 并蚀刻所述支撑层的至少一部分。该方法可以提供通过将结晶生长到氧化铝载体层上并通过湿蚀刻化学去除至少一部分载体层而制备的层压体。提供了包括层压板的电子设备，光学设备或组合设备。

7. 发明申请

US20050087884A1 Flip-chip light emitting diode 失效
标题翻译：倒装芯片发光二极管
公开(公告)号：US20050087884A1
公开(公告)日：2005-04-28
申请号：US10693126
申请日：2003-10-24
申请人： Edward Stokes , Mark D'Evelyn , Stanton Weaver , Peter Sandvik , Abasifreke Ebong , Xian-an Cao , Steven LeBoeuf , Nikhil Taskar
发明人： Edward Stokes , Mark D'Evelyn , Stanton Weaver , Peter Sandvik , Abasifreke Ebong , Xian-an Cao , Steven LeBoeuf , Nikhil Taskar
IPC分类号： H01L23/48 , H01L33/38 , H01L33/40
CPC分类号： H01L33/405 , H01L33/387 , H01L2933/0083
摘要： A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).
摘要翻译：倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化以限定装置台面（30,30'，30“）。反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触，设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

8. 发明申请

US20100051096A1 SILICON CARBONITRIDE ANTIREFLECTIVE COATING 审中-公开
标题翻译：硅碳化硅抗反射涂层
公开(公告)号：US20100051096A1
公开(公告)日：2010-03-04
申请号：US12325028
申请日：2008-11-28
申请人： Dong Seop Kim , Moon Hee Kang , Ajeet Rohatgi , Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Abasifreke Ebong
发明人： Dong Seop Kim , Moon Hee Kang , Ajeet Rohatgi , Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Abasifreke Ebong
IPC分类号： H01L31/0216 , H01L31/0256 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/18 , Y02E10/50
摘要： An antireflective coating for silicon-based solar cells comprising amorphous silicon carbonitride, wherein the amount of carbon in the silicon carbonitride is from 5 to 25%, a solar cell comprising the antireflective coating, and a method of preparing the antireflective coating.
摘要翻译：一种包含非晶硅碳氮化物的硅基太阳能电池的抗反射涂层，其中碳氮化硅中碳的量为5至25％，包含抗反射涂层的太阳能电池以及制备抗反射涂层的方法。

9. 发明申请

US20080241988A1 METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING A GALLIUM DOPED P-SILICON SUBSTRATE 审中-公开
标题翻译：用于制备具有硅酸钡硅基底的硅太阳能电池结构的方法
公开(公告)号：US20080241988A1
公开(公告)日：2008-10-02
申请号：US12138179
申请日：2008-06-12
申请人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
发明人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
IPC分类号： H01L31/18
CPC分类号： H01L31/0288 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
摘要翻译：公开了装置，太阳能电池结构及其制造方法。

10. 发明申请

US20080241987A1 METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING SILICON NITRIDE LAYERS 审中-公开
标题翻译：用于制造具有硅氮化物层的硅太阳能电池结构的方法
公开(公告)号：US20080241987A1
公开(公告)日：2008-10-02
申请号：US12138140
申请日：2008-06-12
申请人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
发明人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
IPC分类号： H01L31/18
CPC分类号： H01L31/0288 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
摘要翻译：公开了装置，太阳能电池结构及其制造方法。

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