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    • 2. 发明申请
    • Copper CMP composition containing ionic polyelectrolyte and method
    • 含有离子聚电解质的铜CMP组成及方法
    • US20090056231A1
    • 2009-03-05
    • US11895896
    • 2007-08-28
    • Daniela WhiteJason J. KeleherJohn Parker
    • Daniela WhiteJason J. KeleherJohn Parker
    • C09K3/14B24B1/00
    • C09K3/1463C09G1/02H01L21/3212
    • The CMP compositions of the invention comprise not more than about 1 percent by weight of a particulate abrasive, a polyelectrolyte, which preferably has a weight average molecular weight of at least about 10,000 grams-per-mole (g/mol), a copper-complexing agent, and an aqueous carrier therefor. The polyelectrolyte can be an anionic polymer (e.g., an acrylate polymer or copolymer) or a cationic polymer (e.g., poly(2-[(methacryloyloxy)ethyl] trimethyl-ammonium halide). When an anionic polyelectrolyte is utilized, the copper-complexing agent preferably comprises an amino polycarboxylate compound (e.g., iminodiacetic acid or a salt thereof). When a cationic polyelectrolyte is utilized, the copper-complexing agent preferably comprises an amino acid (e.g., glycine). Preferably, the particulate abrasive comprises metal oxide such as titanium dioxide or silicon dioxide. Methods of polishing copper-containing substrates with the compositions are also disclosed.
    • 本发明的CMP组合物包含不超过约1重量%的颗粒磨料,聚电解质,其优选具有至少约10,000克/摩尔(g / mol)的重均分子量,铜 - 络合剂及其载体。 聚电解质可以是阴离子聚合物(例如,丙烯酸酯聚合物或共聚物)或阳离子聚合物(例如聚(2 - [(甲基丙烯酰氧基)乙基]三甲基 - 卤化铵)),当使用阴离子聚电解质时,铜络合 药剂优选包含氨基多羧酸盐化合物(例如亚氨基二乙酸或其盐)当使用阳离子聚电解质时,铜络合剂优选包含氨基酸(例如甘氨酸),优选颗粒磨料包含金属氧化物 作为二氧化钛或二氧化硅。还公开了用组合物抛光含铜基材的方法。
    • 6. 发明申请
    • Copper-passivating CMP compositions and methods
    • 铜钝化CMP组合物和方法
    • US20090134122A1
    • 2009-05-28
    • US11986921
    • 2007-11-27
    • Daniela WhiteJason KeleherJohn Parker
    • Daniela WhiteJason KeleherJohn Parker
    • C09K13/00H01L21/302
    • H01L21/3212C09G1/02C09K3/1409C23F3/04C23F3/06
    • The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
    • 本发明提供用于抛光含铜基材的化学机械抛光(CMP)方法和组合物。 本发明的方法需要用本发明的CMP组合物,优选在氧化剂(例如过氧化氢)的存在下研磨含铜基材的表面。 本发明的CMP组合物包含颗粒磨料,铜络合剂,带有酸性OH基团的铜钝化剂和与酸性OH基团1,6关系的另外的氧取代基和水性载体。 本发明的优选组合物包含约0.01至约1重量%的颗粒磨料,约0.1至约1重量%的铜络合剂,约10至约1000ppm的铜钝化剂。
    • 9. 发明申请
    • Synthesis of vinyl polymers by controlled radical polymerization
    • 通过控制自由基聚合合成乙烯基聚合物
    • US20050131178A1
    • 2005-06-16
    • US11041154
    • 2005-01-21
    • Daniela WhiteJames O'Dwyer
    • Daniela WhiteJames O'Dwyer
    • C08F2/32C08F2/38C08F4/00C08F293/00C08F4/04
    • C08F4/00C08F2/32C08F293/005
    • A controlled free radical polymerization process, which includes the steps of: adding a monofunctional iniferter compound to an oxygen-free solvent; heating the solution to a temperature sufficient to allow the iniferter compound to form two carbon centered radical residues; adding a first monomer composition comprising one or more monomers to the solution containing the radical containing residues; polymerizing the first monomer composition to form a quasi-living polymer; and optionally polymerizing a second monomer composition comprising one or more monomers, which are different than the first monomer composition. The resulting non-random copolymer having the general formula: φ-[-Ap-Bs-]t-φwhere A and B are different compositions of ethylenically unsaturated monomers; p is an integer from 1 to 1,000; s is an integer from 0 to 1,000; t is an integer from 1 to 100; and φ is a residue from the iniferter.
    • 一种受控的自由基聚合方法,其包括以下步骤:将单官能异构体化合物加入到无氧溶剂中; 将溶液加热至足以允许引发剂化合物形成两个碳中心自由基残基的温度; 将含有一种或多种单体的第一单体组合物加入到含有基团的残基的溶液中; 聚合第一单体组合物以形成准活性聚合物; 并且任选地聚合包含与第一单体组合物不同的一种或多种单体的第二单体组合物。 所得到的具有以下通式的非无规共聚物:<?in-line-formula description =“In-line Formulas”end =“lead”?> phi - [ - A

      其中A和B是不饱和烯键式的不同组成,其中A和B是不同组成的烯键式不饱和键 单体; p是1至1,000的整数; s是0到1,000之间的整数; t为1〜100的整数; phi是来自引物的残基。

    • 10. 发明授权
    • Synthesis of vinyl polymers by controlled radical polymerization
    • 通过控制自由基聚合合成乙烯基聚合物
    • US06875832B2
    • 2005-04-05
    • US10116239
    • 2002-04-04
    • Daniela WhiteJames B. O'Dwyer
    • Daniela WhiteJames B. O'Dwyer
    • C08F2/32C08F2/38C08F4/00C08F293/00C08F4/04
    • C08F4/00C08F2/32C08F293/005
    • A controlled free radical polymerization process, which includes the steps of: adding a monofunctional iniferter compound to an oxygen-free solvent; heating the solution to a temperature sufficient to allow the iniferter compound to form two carbon centered radical residues; adding a first monomer composition comprising one or more monomers to the solution containing the radical containing residues; polymerizing the first monomer composition to form a quasi-living polymer; and optionally polymerizing a second monomer composition comprising one or more monomers, which are different than the first monomer composition. The resulting non-random copolymer having the general formula: φ-[—Ap—Bs—]t-φ where A and B are different compositions of ethylenically unsaturated monomers; p is an integer from 1 to 1,000; s is an integer from 0 to 1,000; t is an integer from 1 to 100; and φ is a residue from the iniferter.
    • 一种受控的自由基聚合方法,其包括以下步骤:将单官能异构体化合物加入到无氧溶剂中; 将溶液加热至足以允许引发剂化合物形成两个碳中心自由基残基的温度; 将含有一种或多种单体的第一单体组合物加入到含有基团的残基的溶液中; 聚合第一单体组合物以形成准活性聚合物; 并且任选地聚合包含与第一单体组合物不同的一种或多种单体的第二单体组合物。 所得的具有以下通式的非无规共聚物:其中A和B是烯属不饱和单体的不同组成; p是1至1,000的整数; s是0到1,000之间的整数; t为1〜100的整数; phi是来自引物的残基。