专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090269923A1 ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS 审中-公开
标题翻译：介电层和导电层之间的粘合和电化学改进
公开(公告)号：US20090269923A1
公开(公告)日：2009-10-29
申请号：US12109533
申请日：2008-04-25
申请人： Sang M. Lee , Yong-Won Lee , Meiyee Shek , Li-Qun Xia , Derek R. Witty
发明人： Sang M. Lee , Yong-Won Lee , Meiyee Shek , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/321
CPC分类号： H01L21/02074 , H01L21/7681 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76856 , H01L21/76867 , H01L21/76883 , H01L21/76886
摘要： A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.
摘要翻译：提供了一种用于处理衬底的方法和设备。处理衬底的方法包括提供包括导电材料的衬底，对导电材料执行预处理工艺，在导电材料上流动硅基化合物以形成硅化物层，对硅化物层进行后处理工艺，并在衬底上沉积阻挡介电层。

2. 发明申请

US20120276301A1 ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER 审中-公开
标题翻译：电介质阻挡层通过添加薄界面对铜的粘接改进
公开(公告)号：US20120276301A1
公开(公告)日：2012-11-01
申请号：US13545738
申请日：2012-07-10
申请人： Yong-Won Lee , Sang M. Lee , Meiyee (Maggie Le) Shek , Weifeng Ye , Li-Qun Xia , Derek R. Witty , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jigang Li
发明人： Yong-Won Lee , Sang M. Lee , Meiyee (Maggie Le) Shek , Weifeng Ye , Li-Qun Xia , Derek R. Witty , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jigang Li
IPC分类号： B05D5/12 , B05D3/06
CPC分类号： H01L21/76832 , H01L21/7681 , H01L21/76826 , H01L21/76834 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.
摘要翻译：本文所述的实施例提供了一种处理衬底的方法。该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。在一个实施例中，提供了一种用于处理衬底的方法。该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

3. 发明申请

US20090107626A1 ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER 审中-公开
标题翻译：电介质阻挡层通过添加薄界面对铜的粘接改进
公开(公告)号：US20090107626A1
公开(公告)日：2009-04-30
申请号：US12258300
申请日：2008-10-24
申请人： Yong-Won Lee , Sang M. Lee , Meiyee(Maggie Le) Shek , Weifeng Ye , Li-Qun Xia , Derek R. Witty , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jigang Li
发明人： Yong-Won Lee , Sang M. Lee , Meiyee(Maggie Le) Shek , Weifeng Ye , Li-Qun Xia , Derek R. Witty , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jigang Li
IPC分类号： B32B37/00
CPC分类号： H01L21/76832 , H01L21/7681 , H01L21/76826 , H01L21/76834 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.
摘要翻译：本文所述的实施例提供了一种处理衬底的方法。该方法包括在导电材料和电介质材料之间沉积界面粘合层，使得界面粘合层在导电材料和电介质材料之间提供增加的粘合力。在一个实施例中，提供了一种用于处理衬底的方法。该方法包括在包括导电材料的基底上沉积界面粘附层，将界面粘附层暴露于含氮等离子体，以及在将界面粘附层暴露于含氮等离子体之后，在界面粘附层上沉积电介质层。

4. 发明授权

US08343881B2 Silicon dioxide layer deposited with BDEAS 有权
标题翻译：沉积有BDEAS的二氧化硅层
公开(公告)号：US08343881B2
公开(公告)日：2013-01-01
申请号：US12794713
申请日：2010-06-04
申请人： Yong-Won Lee , Vladimir Zubkov , Mei-Yee Shek , Li-Qun Xia , Prahallad Iyengar , Sanjeev Baluja , Scott A Hendrickson , Juan Carlos Rocha-Alvarez , Thomas Nowak , Derek R Witty
发明人： Yong-Won Lee , Vladimir Zubkov , Mei-Yee Shek , Li-Qun Xia , Prahallad Iyengar , Sanjeev Baluja , Scott A Hendrickson , Juan Carlos Rocha-Alvarez , Thomas Nowak , Derek R Witty
IPC分类号： H01L29/06 , H01L21/31 , C23C16/448
CPC分类号： H01L21/02271 , C23C16/402 , H01L21/02164 , H01L21/0332 , H01L21/76898
摘要： A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
摘要翻译：使用包含BDEAS和含氧气体如臭氧的工艺气体将二氧化硅层沉积到衬底上。二氧化硅层可以是包括抗蚀剂层的抗蚀刻堆叠的一部分。在另一个版本中，二氧化硅层被沉积到通孔中以形成用于通硅通孔的氧化物衬垫。

5. 发明申请

US20120097330A1 DUAL DELIVERY CHAMBER DESIGN 审中-公开
标题翻译：双重交付室设计
公开(公告)号：US20120097330A1
公开(公告)日：2012-04-26
申请号：US12908617
申请日：2010-10-20
申请人： Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
发明人： Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/465 , H01L21/46
CPC分类号： H01L21/02164 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/463 , C23C16/5096 , H01L21/02274
摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
摘要翻译：衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。第一处理气体进入热处理器或等离子体发生器。然后，第一处理气体直接通过喷头流入处理室。第二处理气体流过穿过喷头的第二流路。第一和第二处理气体混合在喷淋头下面，并且一层材料沉积在喷头下方的基底上。

6. 发明授权

US08658242B2 Resist fortification for magnetic media patterning 有权
标题翻译：磁性介质图案抗蚀强化
公开(公告)号：US08658242B2
公开(公告)日：2014-02-25
申请号：US13193539
申请日：2011-07-28
申请人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
发明人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
IPC分类号： B05D5/12
CPC分类号： G11B5/85 , G11B5/743 , G11B5/855
摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要翻译：提供了一种形成磁性介质基板的方法和装置。在具有磁敏感层的基底上形成图案化的抗蚀剂层。在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

7. 发明申请

US20120196155A1 RESIST FORTIFICATION FOR MAGNETIC MEDIA PATTERNING 有权
标题翻译：用于磁介质图形的电阻强化
公开(公告)号：US20120196155A1
公开(公告)日：2012-08-02
申请号：US13193539
申请日：2011-07-28
申请人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
发明人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
IPC分类号： G11B5/64 , C23C16/50 , C23C16/04 , B05D5/00 , B82Y10/00
CPC分类号： G11B5/85 , G11B5/743 , G11B5/855
摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要翻译：提供了一种形成磁性介质基板的方法和装置。在具有磁敏感层的基板上形成图案化的抗蚀剂层。在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

8. 发明申请

US20060115271A1 Method for operating wavelength-division-multiplexed passive optical network 审中-公开
标题翻译：用于操作波分复用无源光网络的方法
公开(公告)号：US20060115271A1
公开(公告)日：2006-06-01
申请号：US11058793
申请日：2005-02-16
申请人： Seong-Taek Hwang , Yun-Je Oh , Dae-Kwang Jung , Jin-Woo Park , Sung-Kuen Lee , Yong-Won Lee , Sang-Rok Lee , Sang-Mo Hong
发明人： Seong-Taek Hwang , Yun-Je Oh , Dae-Kwang Jung , Jin-Woo Park , Sung-Kuen Lee , Yong-Won Lee , Sang-Rok Lee , Sang-Mo Hong
IPC分类号： H04J14/00
CPC分类号： H04J14/0227 , H04J14/0226 , H04J14/0246 , H04J14/0247 , H04J14/025 , H04J14/0252 , H04J14/0282
摘要： Disclosed is a method for operating a wavelength-division-multiplexed passive optical network (WDM-PON) including an optical line terminal (OLT) and a plurality of optical network units (ONUs), each of which is connected to the OLT and communicates with the OLT. The method comprises the steps of transmitting a first control channel including allocation information of downstream data channels and allocation information of time slots for the downstream data channels to each of the plurality of ONUs; and transmitting downstream data to the plurality of ONUs using their associated downstream data channels, each having at least one time slot, based on the information included in the first control channel.
摘要翻译：公开了一种用于操作包括光线路终端（OLT）和多个光网络单元（ONU）的波分复用无源光网络（WDM-PON）的方法，每个光网络单元（ONU）连接到OLT并与 OLT。该方法包括以下步骤：向多个ONU中的每一个发送包括下行数据信道的分配信息的第一控制信道和用于下行数据信道的时隙的分配信息; 以及基于包括在所述第一控制信道中的信息，使用其相关联的下游数据信道向所述多个ONU发送下行数据，每个ONU具有至少一个时隙。

9. 发明申请

US20100031842A1 SPACE ENERGY IMPLOSION UNIT AND AN ENERGY AMPLIFICATION GENERATOR USING THE SAME 审中-公开
标题翻译：空间能量密封单元和能量放大发生器
公开(公告)号：US20100031842A1
公开(公告)日：2010-02-11
申请号：US12443965
申请日：2007-10-01
申请人： Eun-Jae Lee , Yong-Won Lee
发明人： Eun-Jae Lee , Yong-Won Lee
IPC分类号： F42B1/02 , F42B3/00
CPC分类号： A61N5/00
摘要： Provided are a space energy implosion unit and an energy amplification generator using the same. The space energy implosion unit includes: a planar structure 1 having a regular pentagonal shape; a cubic structure 2 which is installed to be separated from an upper portion of the planar structure 1 and has a regular pentagonal pyramid shape; and a separation structure 3 which separates the planar structure 1 and the cubic structure 2 from each other and has a smaller area than areas of the planar structure 1 and the cubic structure 2. The energy amplification generator includes: a first geometrical structure in which vertices of each of five or seven pieces of planar structures 1 having a regular pentagonal shape contact one another; a second geometrical structure which is separated from an upper portion of the first geometrical structure and in which vertices of each of five or seven cubic structures 2 having a regular pentagonal pyramid shape contact one another; and a plurality of separation structures 3 which separate the first geometrical structure and the second geometrical structure from each other, are installed between the planar structure 1 and the cubic structure 2 and have a smaller area than areas of the planar structure 1 and the cubic structure 2.
摘要翻译：提供了一种空间能量内爆单元和使用其的能量放大发生器。空间能量内爆单元包括：具有规则五边形形状的平面结构1; 立方体结构2，其被安装成与平面结构1的上部分离并具有规则的五角锥形; 以及将平面结构1和立方结构2彼此分离并且具有比平面结构1和立方结构2的面积小的面积的分离结构3.能量放大发生器包括：第一几何结构，其中顶点具有规则五边形形状的五个或七个平面结构1中的每一个彼此接触; 第二几何结构，其与第一几何结构的上部分离，并且其中具有正五边形棱锥形状的五个或七个立方结构2中的每一个的顶点彼此接触; 并且将多个分离第一几何结构和第二几何结构的分离结构3安装在平面结构1和立方结构2之间，并且具有比平面结构1和立方结构的面积小的面积 2。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式