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1. 发明授权

US5152513A Sheet reversing apparatus for individual sheet feeding 失效
标题翻译：表格反馈装置用于个人纸张进给
公开(公告)号：US5152513A
公开(公告)日：1992-10-06
申请号：US548630
申请日：1990-07-05
申请人： Tsuyoshi Ogasawara , Junichi Matsuno , Masataka Kawauchi , Makoto Kurosawa , Masaaki Koseki , Tetsuro Takahashi , Youichi Takeuchi
发明人： Tsuyoshi Ogasawara , Junichi Matsuno , Masataka Kawauchi , Makoto Kurosawa , Masaaki Koseki , Tetsuro Takahashi , Youichi Takeuchi
IPC分类号： B65H29/24 , B65H9/04 , B65H9/08 , B65H15/00 , B65H29/58 , B65H83/02
CPC分类号： B65H15/00 , B65H2301/5133 , Y10S271/902
摘要： A sheet reversing apparatus comprises a support in which sheets are stacked, an entrance section for guiding the sheet to the support, a blowing mechanism for directing an air stream to a sheet stack on the support to separate a lowermost sheet from remaining sheets, and a feeding mechanism for attracting the sheet to feed it. Further, stopper plates are provided to be pivoted above the support so that it cooperates with the support to pinch and brake the sheet therebetween in a continuous reversing mode wherein the incoming sheet is immediately fed and that it abuts against the incoming sheet by a portion thereof opposing a leading end of the sheet in a stack reversing mode wherein while the sheets are being stacked the lowermost sheet is separated and fed.

2. 发明授权

US08608901B2 Process chamber cleaning method in substrate processing apparatus, substrate processing apparatus, and substrate processing method 有权
标题翻译：基板处理装置，基板处理装置和基板处理方法中的处理室清洗方法
公开(公告)号：US08608901B2
公开(公告)日：2013-12-17
申请号：US12711904
申请日：2010-02-24
申请人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
发明人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C25F1/00
CPC分类号： H01J37/32862 , B08B7/0035
摘要： In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
摘要翻译：在被配置为对容纳在处理室中的目标基板执行预定处理的基板处理装置中，通过交替地执行在处理室内产生含氧气体的等离子体的操作来清洁处理室，以及产生等离子体的操作在处理室内含有氮气的气体。

3. 发明授权

US08244773B2 Keyword output apparatus and method 有权
标题翻译：关键词输出装置及方法
公开(公告)号：US08244773B2
公开(公告)日：2012-08-14
申请号：US12613984
申请日：2009-11-06
申请人： Kanji Uchino , Tetsuro Takahashi , Seishi Okamoto
发明人： Kanji Uchino , Tetsuro Takahashi , Seishi Okamoto
IPC分类号： G06F15/16 , G06F17/20
CPC分类号： G06F17/30864
摘要： Related keywords having certain relations to a target keyword are extracted from a unit storing keywords according to relations among each other. Expressions corresponding to the target keyword and related keywords are read from a unit storing expressions correspondingly with each stored keyword, each expression having been extracted from a content containing the corresponding keyword. A commonness between the expressions corresponding to each related keyword and the target keyword is calculated. An association between each related keyword and the target keyword is calculated using a distance for each related keyword from the target keyword and the commonness. A related keyword having a certain association is extracted as a same-region keyword in a same region as the target keyword. A drawing including the target keyword and related keywords arranged according to the associations is output with the same-region keyword displayed distinguishably from other related keywords not included in the same region.
摘要翻译：根据关系，从存储关键字的单元中提取与目标关键词具有一定关系的相关关系。对应于目标关键字和相关关键字的表达式从存储与每个存储的关键词相对应的表达式的单元中读取，每个表达式已经从包含相应关键字的内容中提取出来。计算与每个相关关键字对应的表达式与目标关键字之间的共同性。使用来自目标关键字的每个相关关键字的距离和共同性来计算每个相关关键字和目标关键字之间的关联。将具有一定关联的相关关键字作为与目标关键词相同的区域中的相同区域关键字提取。输出包括根据关联设置的目标关键字和相关关键词的图形，其中显示与不包括在相同区域中的其他相关关键字可区分地显示的相同区域关键字。

4. 发明申请

US20100154707A1 PROCESS CHAMBER CLEANING METHOD IN SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置中的处理室清洗方法，基板处理装置和基板处理方法
公开(公告)号：US20100154707A1
公开(公告)日：2010-06-24
申请号：US12711904
申请日：2010-02-24
申请人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
发明人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
IPC分类号： C23C16/52
CPC分类号： H01J37/32862 , B08B7/0035
摘要： In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
摘要翻译：在被配置为对容纳在处理室中的目标基板执行预定处理的基板处理装置中，通过交替地执行在处理室内产生含氧气体的等离子体的操作来清洁处理室，以及产生等离子体的操作在处理室内含有氮气的气体。

5. 发明授权

US07695763B2 Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate 有权
标题翻译：基板处理装置的清洗处理室的方法，基板处理装置以及基板的处理方法
公开(公告)号：US07695763B2
公开(公告)日：2010-04-13
申请号：US10587394
申请日：2005-01-27
申请人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
发明人： Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
IPC分类号： C23C16/00 , B08B6/00 , B08B9/00
CPC分类号： H01J37/32862 , B08B7/0035
摘要： In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
摘要翻译：在被配置为对容纳在处理室中的目标基板执行预定处理的基板处理装置中，通过交替地执行在处理室内产生含氧气体的等离子体的操作来清洁处理室，以及产生等离子体的操作在处理室内含有氮气的气体。

6. 发明申请

US20080000551A1 Insulating Film Forming Method and Substrate Processing Method 失效
标题翻译：绝缘膜成型方法和基板加工方法
公开(公告)号：US20080000551A1
公开(公告)日：2008-01-03
申请号：US11718582
申请日：2005-11-02
申请人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
发明人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
IPC分类号： C23C8/36 , C23C8/24 , G06F19/00
CPC分类号： H01L21/02332 , H01L21/0214 , H01L21/02252 , H01L21/02255 , H01L21/0234 , H01L21/3144 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.
摘要翻译：在通过对基板上的氧化膜进行等离子体氮化处理，然后在处理室（51）中对基板进行退火来形成绝缘膜的方法中，在667Pa以下的低压下进行退火。退火进行5或45秒。等离子体氮化处理通过使用平面天线由微波等离子体进行，由此形成多个槽孔。

7. 发明授权

US07915179B2 Insulating film forming method and substrate processing method 失效
标题翻译：绝缘膜成型方法和基板加工方法
公开(公告)号：US07915179B2
公开(公告)日：2011-03-29
申请号：US11718582
申请日：2005-11-02
申请人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
发明人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02332 , H01L21/0214 , H01L21/02252 , H01L21/02255 , H01L21/0234 , H01L21/3144 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.
摘要翻译：在通过对基板上的氧化膜进行等离子体氮化处理，然后在处理室（51）中对基板进行退火来形成绝缘膜的方法中，在667Pa以下的低压下退火基板。退火进行5或45秒。等离子体氮化处理通过使用平面天线由微波等离子体进行，由此形成多个槽孔。

8. 发明授权

US07857984B2 Plasma surface treatment method, quartz member, plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体表面处理方法，石英构件，等离子体处理装置和等离子体处理方法
公开(公告)号：US07857984B2
公开(公告)日：2010-12-28
申请号：US11829600
申请日：2007-07-27
申请人： Tetsuro Takahashi
发明人： Tetsuro Takahashi
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： C03C23/006 , H01J37/32192 , H01J37/32229 , H01J37/32238
摘要： A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and N2 gas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm2, the surface treatment being repeated 25 to 2000 times.
摘要翻译：一种等离子体表面处理方法，用于通过使用离子能量大于约5.3eV的等离子体在等离子体暴露环境下使用的石英构件进行表面处理。等离子体在石英构件的表面附近具有高于或等于约2eV的电子温度。此外，在通过具有多个槽的平面天线将微波引入处理室来产生等离子体的等离子体处理装置中，通过使用包含有多个槽的处理气体的等离子体进行表面处理约30〜300秒 Ar气体和N 2气体，处理压力低于或等于约15Pa，微波功率高于或等于约0.9W / cm 2的条件下，表面处理重复25〜2000次。

9. 发明授权

US07842621B2 Method of measuring nitrogen concentration, method of forming silicon oxynitride film, and method of manufacturing semiconductor device. 失效
标题翻译：测量氮浓度的方法，形成氮氧化硅膜的方法以及制造半导体器件的方法。
公开(公告)号：US07842621B2
公开(公告)日：2010-11-30
申请号：US12300877
申请日：2007-05-17
申请人： Jiro Katsuki , Tetsuro Takahashi , Shuuichi Ishizuka
发明人： Jiro Katsuki , Tetsuro Takahashi , Shuuichi Ishizuka
IPC分类号： G01R31/26 , H01L21/66 , H01L21/31
CPC分类号： H01L22/20 , G06F19/00 , H01J37/32192 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L22/12 , H01L29/66621 , H01L29/785
摘要： The total film thickness T1N of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (T2N) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the target substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness T2 of the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio RORR of the measurement target substrate is calculated by the following formula (1) from the values of total film thicknesses T1N, T2N and T2. The nitrogen concentration of the silicon oxynitride film of the target substrate is determined from the calculated re-oxidization rate reduction ratio RORR. RORR (%)={(T2−T2N)/(T2−T1N)}×100 (1).
摘要翻译：测量作为其下层保留的氮氧化硅膜和氧化硅膜的总膜厚度T1N。测量对象衬底被再氧化，并且在再氧化之后，测量由目标衬底上的再氧化产生的氮氧化硅膜，氧化硅膜和氧化硅膜的总膜厚度（T2N）。另外，设置有氧化硅膜的参考基板被再次氧化，并且在再氧化之后，测量由参考基板上的再氧化产生的氧化硅膜和氧化硅膜的总膜厚度T2。根据总膜厚T1N，T2N，T2的值，通过下式（1）计算测定对象基板的再氧化率降低率RORR。根据计算出的再氧化速率降低率RORR求出目标基板的氮氧化硅膜的氮浓度。 RORR（％）= {（T2-T2N）/（T2-T1N）}×100（1）。

10. 发明申请

US20070233563A1 Web-page sorting apparatus, web-page sorting method, and computer product 审中-公开
标题翻译：网页分拣设备，网页排序方法和计算机产品
公开(公告)号：US20070233563A1
公开(公告)日：2007-10-04
申请号：US11485439
申请日：2006-07-13
申请人： Tetsuro Takahashi , Kanji Uchino
发明人： Tetsuro Takahashi , Kanji Uchino
IPC分类号： G06Q30/00
CPC分类号： G06Q30/02 , G06Q30/0277
摘要： An advertisement page on which an article written by an advertiser are sorted from web pages that are used for posting articles on the Internet. A word list is prepared in which words including unique expressions are registered. Words are extracted from text information included in the web pages, a number is counted indicating how many words match between the words contained in the word list and the extracted words, and the advertisement page is sorted out from the web pages based on the count.
摘要翻译：由广告商撰写的文章的广告页面从用于在因特网上发布文章的网页排序。准备一个单词列表，其中注册包含唯一表达式的单词。从网页中包含的文本信息中提取单词，计数一个数字，表示在单词列表中包含的单词和提取的单词之间有多少单词相匹配，并且根据该计数从网页中整理出广告页面。

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