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1. 发明授权

US08753475B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08753475B2
公开(公告)日：2014-06-17
申请号：US12366907
申请日：2009-02-06
申请人： Naoki Matsumoto , Jun Yoshikawa , Masaru Sasaki , Kazuyuki Kato , Masafumi Shikata , Shingo Takahashi
发明人： Naoki Matsumoto , Jun Yoshikawa , Masaru Sasaki , Kazuyuki Kato , Masafumi Shikata , Shingo Takahashi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/32238
摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.
摘要翻译：提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及天线24，其布置在电介质15的顶表面上，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25，表面16a和16b。

2. 发明申请

US20130088223A1 TWO-CORE OPTICAL FIBER MAGNETIC FIELD SENSOR 有权
标题翻译：双核光纤磁场传感器
公开(公告)号：US20130088223A1
公开(公告)日：2013-04-11
申请号：US13805031
申请日：2011-06-23
申请人： Yoshihiro Konno , Masaru Sasaki
发明人： Yoshihiro Konno , Masaru Sasaki
IPC分类号： G01R33/032
CPC分类号： G01R33/032
摘要： A two-core optical fiber magnetic field sensor is configured from at least a light incidence/emission unit; a lens; a magnetic garnet; and a reflector, wherein the lens and the magnetic garnet are disposed between the light incidence/emission end of the light incidence/emission unit and the reflector; a light beam is emitted from one optical fiber; the light beam is reflected by the reflector after being transmitted through the lens and the magnetic garnet; the light beam is transmitted again through the magnetic garnet and the lens after the reflection; and incident on the other optical fiber, the light beam is emitted again from the other optical fiber, and reflected by the reflector after being transmitted through the lens and the magnetic garnet; and the light beam is transmitted again through the magnetic garnet and the lens after the reflection and incident again on the one optical fiber.
摘要翻译：两芯光纤磁场传感器由至少一个入射/发射单元构成; 镜头磁石榴石以及反射器，其中所述透镜和所述磁性石榴石设置在所述光入射/发射单元的光入射/发射端与所述反射器之间; 从一根光纤射出光束; 光束在透射透镜和磁性石榴石后被反射器反射; 反射后光束再次通过磁石榴石和透镜传播; 入射到另一根光纤上时，光束再次从另一根光纤发射，并被反射器透射后通过透镜和磁性石榴石反射; 并且在反射之后光束再次通过磁性石榴石和透镜再次传输到一根光纤上。

3. 发明授权

US08378628B2 Plug conversion adaptor 有权
标题翻译：插头转换适配器
公开(公告)号：US08378628B2
公开(公告)日：2013-02-19
申请号：US13120332
申请日：2009-02-26
申请人： Shinji Ichikawa , Kenji Itagaki , Masaru Sasaki , Wanleng Ang , Kenji Murasato , Atsushi Mizutani , Yukihiro Yamamoto , Taira Kikuchi , Yoshikazu Kataoka , Shingo Ieda , Hiroki Sawada , Yoshinori Fujitake
发明人： Shinji Ichikawa , Kenji Itagaki , Masaru Sasaki , Wanleng Ang , Kenji Murasato , Atsushi Mizutani , Yukihiro Yamamoto , Taira Kikuchi , Yoshikazu Kataoka , Shingo Ieda , Hiroki Sawada , Yoshinori Fujitake
IPC分类号： H02J7/00
CPC分类号： H01R31/065 , B60L3/0069 , B60L3/04 , B60L11/005 , B60L11/1818 , B60L2230/12 , B60L2270/32 , B60L2270/34 , H01R13/665 , H01R13/70 , Y02T10/7005 , Y02T10/7022 , Y02T10/7088 , Y02T90/121 , Y02T90/14
摘要： A conversion adaptor enables utilization of a standardized charge cable used when a power storage device mounted on an electrically-powered vehicle is charged by a power source provided outside of the vehicle as a universal cable for transmitting electric power to electric loads having different plug shapes that are respectively standardized from one region to another. Conversion adaptor includes a primary side connector unit configured to be connectable to a connector of charge cable, a secondary side connector unit configured so as to have a plug of an electric load, such as a home electric appliance, connected thereto, and a manipulating unit for manipulating a CCID of charge cable so that relays are switched off when connector of charge cable is connected to first connector unit.
摘要翻译：转换适配器使得利用当安装在电动车辆上的电力存储装置由设置在车辆外部的电源充电的标准化充电电缆作为用于将电力传送到具有不同插头形状的电负载的通用电缆时，分别从一个区域到另一个区域标准化。转换适配器包括被配置为可连接到充电电缆的连接器的初级侧连接器单元，被配置为具有连接到其上的诸如家用电器的电负载插头的次级侧连接器单元和操纵单元用于操作充电电缆的CCID，以便当充电电缆的连接器连接到第一连接器单元时，继电器被关闭。

4. 发明申请

US20120064726A1 PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：等离子体蚀刻装置，等离子体蚀刻方法和半导体器件制造方法
公开(公告)号：US20120064726A1
公开(公告)日：2012-03-15
申请号：US13232160
申请日：2011-09-14
申请人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
发明人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32706 , H01L21/31116 , H01L21/76224 , H01L21/76897 , H01L29/6653 , H01L29/6656
摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
摘要翻译：提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。

5. 发明授权

US08006640B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08006640B2
公开(公告)日：2011-08-30
申请号：US11691154
申请日：2007-03-26
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： C23C16/511
CPC分类号： H01J37/32458 , H01J37/32192 , H01J37/3222 , H01L21/0217 , H01L21/0223 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/31662 , H01L21/3185
摘要： A plasma processing apparatus includes: a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process; a worktable configured to place the target object thereon inside the process container; a planar antenna including a plurality of slots and configured to supply microwaves into the process container; a gas feed mechanism configured to supply a process gas into the process container; and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less.
摘要翻译：等离子体处理装置包括：处理容器，被配置为容纳目标物体并保持其中的真空以进行等离子体处理; 配置成将目标物体放置在处理容器内的工作台; 平面天线，包括多个槽并且被配置为将微波供应到所述处理容器中; 气体供给机构，其构造成将处理气体供给到所述处理容器中; 以及与工作台相对设置的顶板，顶板设置在与放置在工作台上的目标物体分开的距离为20mm以上且100mm以下的位置。

6. 发明申请

US20110039417A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110039417A1
公开(公告)日：2011-02-17
申请号：US12866545
申请日：2009-02-06
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Masaru Sasaki
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Masaru Sasaki
IPC分类号： H01L21/465 , H01L21/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A dielectric board (20) is arranged on a ceiling surface, which is of a processing container (2) and faces a susceptor (3), a slot antenna (30) having a plurality of slots (33) which pass through microwaves is arranged on an upper surface of the dielectric board (20), and a protruding member (21), which is composed of a member different from the dielectric board (20) and eliminates abnormal discharge, is provided on a lower peripheral section of the dielectric board (20). A field strength at the peripheral section of the dielectric board (20) is controlled by adjusting a space between an outer circumference surface (22) of a cylindrical section of the protruding member (21) and a side wall inner circumference surface (5a) of the processing container (2) or adjusting the thickness of the cylindrical section of the protruding member (21).
摘要翻译：在处理容器（2）的顶棚面上配置有面向基座（3）的电介质板（20），具有通过微波的多个槽（33）的缝隙天线（30）在所述电介质基板（20）的上表面上设置有与所述电介质板（20）不同的部件构成并且消除异常放电的突出部件（21）（20）。通过调整突出构件（21）的圆筒部的外周面（22）与侧壁内周面（5a）之间的空间来控制电介质基板（20）的周边部的场强，处理容器（2）或调整突出部件（21）的圆筒部的厚度。

7. 发明申请

US20100279685A1 WIRELESS TERMINAL MANAGEMENT APPARATUS, WIRELESS TERMINAL MANAGEMENT METHOD, WIRELESS TERMINAL MANAGEMENT PROGRAM, AND RECORDING MEDIUM 审中-公开
标题翻译：无线终端管理装置，无线终端管理方法，无线终端管理程序和记录介质
公开(公告)号：US20100279685A1
公开(公告)日：2010-11-04
申请号：US12746064
申请日：2007-12-04
申请人： Masaru Sasaki , Koichi Nagaki , Kenichi Takeda , Eiji Saito
发明人： Masaru Sasaki , Koichi Nagaki , Kenichi Takeda , Eiji Saito
IPC分类号： H04W60/00
CPC分类号： H04W60/00 , H04W8/005 , H04W8/06 , H04W76/30
摘要： A wireless terminal management apparatus includes a communication unit performing short-distance wireless communication with wireless terminals; a registering unit that registers information indicating a wireless terminal connectable to the communication unit; a determining unit that determines whether the number of registrations of information indicating a wireless terminal registered in the registering unit has reached a given number of wireless terminals allowed to connect to the communication unit; an updating unit that when a non-registered wireless terminal is nearby and if the number of registrations has reached the given number, updates the number of registrations such that information indicating the non-registered wireless terminal becomes registered; and a searching unit that searches for a wireless terminal nearby, where if a search result indicates no registered wireless terminals and a non-registered wireless terminal nearby, the updating unit updates to enable information indicating the non-registered wireless terminal to be registered by the registering unit.
摘要翻译：无线终端管理装置包括与无线终端进行短距离无线通信的通信单元; 注册单元，其注册指示可连接到所述通信单元的无线终端的信息; 确定单元，确定在注册单元中登记的指示无线终端的信息的登记数量是否已经达到允许连接到通信单元的给定数量的无线终端; 更新单元，当未注册的无线终端在附近并且注册的数量已经达到给定的数量时，更新注册的数量，使得指示未注册的无线终端的信息变为注册; 以及搜索单元，其搜索附近的无线终端，其中如果搜索结果指示没有注册的无线终端和附近的未注册的无线终端，则所述更新单元更新以使得能够由所述无注册无线终端注册的指示未注册的无线终端的信息登记单位

8. 发明授权

US07825018B2 Plasma oxidation method and method for manufacturing semiconductor device 失效
标题翻译：等离子体氧化法及制造半导体器件的方法
公开(公告)号：US07825018B2
公开(公告)日：2010-11-02
申请号：US12281046
申请日：2007-02-27
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/7881 , H01J37/32192 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273 , H01L21/31662 , H01L27/115 , H01L29/513 , H01L29/66825
摘要： A plasma oxidation processing method is performed, on a structural object including a silicon layer and a refractory metal-containing layer, to form a silicon oxide film. A first plasma oxidation process is performed by use of a process gas including at least hydrogen gas and oxygen gas and a process pressure of 1.33 to 66.67 Pa. A second plasma oxidation process is performed by use of a process gas including at least hydrogen gas and oxygen gas and a process pressure of 133.3 to 1,333 Pa, after the first plasma oxidation process.
摘要翻译：在包括硅层和含难熔金属层的结构物体上进行等离子体氧化处理方法以形成氧化硅膜。通过使用至少包含氢气和氧气的工艺气体和1.33〜66.67Pa的工艺压力进行第一等离子体氧化工艺。使用至少包括氢气和氧气，工艺压力为133.3〜1333Pa，经过等离子体氧化处理。

9. 发明授权

US07811945B2 Selective plasma processing method 失效
标题翻译：选择性等离子体处理方法
公开(公告)号：US07811945B2
公开(公告)日：2010-10-12
申请号：US12053360
申请日：2008-03-21
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31662 , H01L21/0214 , H01L21/0217 , H01L21/0223 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/3144 , H01L21/3185
摘要： A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.
摘要翻译：在等离子体处理装置的处理室内的选择性等离子体处理方法，在具有硅和氮化硅层的目标物体上使含氧等离子体作用，以相对于氮化硅层选择性氧化硅，并形成氧化硅电影。此外，形成在氮化硅层内的氮氧化硅膜的厚度与通过氧化形成的氧化硅膜的厚度的比例等于或小于20％。

10. 发明申请

US20100105215A1 METHOD OF MODIFYING INSULATING FILM 有权
标题翻译：修改绝缘膜的方法
公开(公告)号：US20100105215A1
公开(公告)日：2010-04-29
申请号：US12632131
申请日：2009-12-07
申请人： Takuya SUGAWARA , Yoshihide TADA , Genji NAKAMURA , Shigenori OZAKI , Toshio NAKANISHI , Masaru SASAKI , Seiji MATSUYAMA , Kazuhide HASEBE , Shigeru NAKAJIMA , Tomonori FUJIWARA
发明人： Takuya SUGAWARA , Yoshihide TADA , Genji NAKAMURA , Shigenori OZAKI , Toshio NAKANISHI , Masaru SASAKI , Seiji MATSUYAMA , Kazuhide HASEBE , Shigeru NAKAJIMA , Tomonori FUJIWARA
IPC分类号： H01L21/31
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

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