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1. 发明申请

US20090239364A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20090239364A1
公开(公告)日：2009-09-24
申请号：US11910332
申请日：2006-03-28
申请人： Tatsuo Nishita , Toshio Nakanishi , Shuuichi Ishizuka , Tomoe Nakayama , Yutaka Fujino
发明人： Tatsuo Nishita , Toshio Nakanishi , Shuuichi Ishizuka , Tomoe Nakayama , Yutaka Fujino
IPC分类号： H01L21/31 , H01L21/28 , C23C16/511
CPC分类号： H01L21/28211 , H01J37/32192 , H01J37/3222 , H01L21/0214 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a method for forming a gate insulating film comprising an oxidation step wherein a silicon oxide film is formed by having an oxygen-containing plasma act on silicon in the surface of an object to be processed in a processing chamber of a plasma processing apparatus. The processing temperature in the oxidation step is more than 600° C. and not more than 1000° C., and the oxygen-containing plasma is formed by introducing an oxygen-containing processing gas containing at least a rare gas and an oxygen gas into the process chamber while introducing a high frequency wave or microwave into the process chamber through an antenna.
摘要翻译：公开了一种形成栅极绝缘膜的方法，其包括氧化步骤，其中通过在等离子体处理设备的处理室中的待处理物体的表面中的含氧等离子体作用于硅上而形成氧化硅膜。氧化步骤中的处理温度大于600℃且不超过1000℃，并且通过将至少含有稀有气体和氧气的含氧处理气体引入到含氧等离子体中而形成含氧等离子体处理室，同时通过天线将高频波或微波引入处理室。

2. 发明授权

US07915179B2 Insulating film forming method and substrate processing method 失效
标题翻译：绝缘膜成型方法和基板加工方法
公开(公告)号：US07915179B2
公开(公告)日：2011-03-29
申请号：US11718582
申请日：2005-11-02
申请人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
发明人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02332 , H01L21/0214 , H01L21/02252 , H01L21/02255 , H01L21/0234 , H01L21/3144 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.
摘要翻译：在通过对基板上的氧化膜进行等离子体氮化处理，然后在处理室（51）中对基板进行退火来形成绝缘膜的方法中，在667Pa以下的低压下退火基板。退火进行5或45秒。等离子体氮化处理通过使用平面天线由微波等离子体进行，由此形成多个槽孔。

3. 发明申请

US20140084099A1 SEATBELT RETRACTOR 审中-公开
标题翻译：座椅延伸器
公开(公告)号：US20140084099A1
公开(公告)日：2014-03-27
申请号：US14119458
申请日：2012-05-29
申请人： Hiroyuki Miyoshi , Tomonari Matsunaga , Eri Yamane , Tomoe Nakayama , Hiroki Yamakawa
发明人： Hiroyuki Miyoshi , Tomonari Matsunaga , Eri Yamane , Tomoe Nakayama , Hiroki Yamakawa
IPC分类号： B60R22/46
CPC分类号： B60R22/46 , B60R22/4633
摘要： A retractor includes a windup drum that winds webbing and a pretensioner unit that causes the windup drum to rotate in a windup direction of the webbing. The pretensioner unit includes a pinion gear configured to rotate in association with the windup drum, a piston that includes a rack for meshing with the pinion gear and causes the windup drum to rotate in the windup direction through the pinion gear, a tubular cylinder that has a circular cross-section and movably holds the piston, and a drive mechanism that drives the piston. The piston further includes, on a rear surface side of the rack, a contact surface configured to come into contact with an inner wall of the cylinder, and the cylinder has such a tube length as not to expose the contact portion in a movable range of the piston.
摘要翻译：牵开器包括卷绕织带的卷起鼓和预紧器单元，其使卷绕滚筒沿织带的卷绕方向旋转。预紧器单元包括构造成与卷绕鼓相关联地旋转的小齿轮;活塞，其包括用于与小齿轮啮合的齿条，并使卷绕滚筒沿着卷绕方向通过小齿轮旋转;管状圆筒，圆形横截面并且可移动地保持活塞，以及驱动机构来驱动活塞。所述活塞在所述齿条的后表面侧还包括被配置为与所述气缸的内壁接触的接触面，所述气缸具有这样的管长度，以使所述接触部不会露出所述接触部的可动范围活塞。

4. 发明申请

US20080000551A1 Insulating Film Forming Method and Substrate Processing Method 失效
标题翻译：绝缘膜成型方法和基板加工方法
公开(公告)号：US20080000551A1
公开(公告)日：2008-01-03
申请号：US11718582
申请日：2005-11-02
申请人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
发明人： Yoshihiro Sato , Tomoe Nakayama , Hiroshi Kobayashi , Yoshinori Osaki , Tetsuro Takahashi
IPC分类号： C23C8/36 , C23C8/24 , G06F19/00
CPC分类号： H01L21/02332 , H01L21/0214 , H01L21/02252 , H01L21/02255 , H01L21/0234 , H01L21/3144 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.
摘要翻译：在通过对基板上的氧化膜进行等离子体氮化处理，然后在处理室（51）中对基板进行退火来形成绝缘膜的方法中，在667Pa以下的低压下进行退火。退火进行5或45秒。等离子体氮化处理通过使用平面天线由微波等离子体进行，由此形成多个槽孔。

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