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    • 10. 发明授权
    • High-impedance substrate
    • 高阻抗衬底
    • US07936310B2
    • 2011-05-03
    • US12175854
    • 2008-07-18
    • Fumihiko AigaSeiichi SuenagaKouichi HaradaTomohiro SuetsunaMaki YonetsuNaoyuki NakagawaTomoko Eguchi
    • Fumihiko AigaSeiichi SuenagaKouichi HaradaTomohiro SuetsunaMaki YonetsuNaoyuki NakagawaTomoko Eguchi
    • H01Q1/38H01Q15/02
    • H01Q15/008
    • A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2≦h≦t/2  inequality 1.
    • 提供了一种高阻抗衬底,其包括用作接地面的金属板,与金属板隔开距离“t”的谐振电路层,谐振电路层设置有至少两个具有 并列配置有距离“g”,将谐振电路与金属板连接起来的连接部件以及介于金属板和谐振电路层之间的磁性体层。 金属板和谐振电路层之间的距离“t”限制在0.1至10mm的范围内,相邻谐振电路之间的距离“g”限制在0.01至5mm的范围内,距离“h” 在磁性材料层和谐振电路层之间限制在由以下不等式1表示的范围内:g / 2≦̸ h≦̸ t / 2不等式1。