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1. 发明授权

US5525549A Method for producing an acceleration sensor 失效
标题翻译：加速度传感器的制造方法
公开(公告)号：US5525549A
公开(公告)日：1996-06-11
申请号：US49801
申请日：1993-04-21
申请人： Tsuyoshi Fukada , Yoshimi Yoshino , Yukihiko Tanizawa
发明人： Tsuyoshi Fukada , Yoshimi Yoshino , Yukihiko Tanizawa
IPC分类号： B81B3/00 , G01L9/00 , G01P15/08 , G01P15/12 , H01L21/3063 , H01L21/78 , H01L21/64
CPC分类号： B81C1/00888 , B81C1/00158 , G01L9/0055 , G01P15/0802 , G01P15/123 , H01L21/3063 , H01L21/78 , B81B2201/0235 , B81C2201/0114 , B81C2201/053 , Y10S148/028 , Y10S148/159 , Y10S438/977
摘要： A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device. The electrochemical etching of the wafer is carried out after the formation of the aluminum film by immersing the wafer in a KOH aqueous solution and by supplying electricity through the aluminum film. The electrochemical etching is terminated at an inflection point where an etching current inflects to a constant level from a peak level. During the electrochemical etching, the diffusion layer reduces horizontal resistance in the epitaxial layer, so that the etched parts receive a sufficient potential to perform the etching.
摘要翻译：一种能够解决与用于电化学蚀刻的金属薄膜切割相关的问题的半导体器件的制造方法。根据该方法，在p型单晶硅晶片上形成n型外延薄层。在外延层上的划线区域中形成n +型扩散层。在对应于晶片的预定部分的外延层的区域中形成n +型扩散层。在扩散层上形成铝膜。铝膜具有用于通过切割刀片的间隙。通过供电通过铝膜和扩散层对晶片的一部分进行电化学蚀刻，以留下外延层的部分。晶片沿着划线区切成芯片。每个芯片形成单独的半导体器件。通过将晶片浸入KOH水溶液中并通过铝膜供电，在形成铝膜之后进行晶片的电化学蚀刻。在蚀刻电流从峰值水平变为恒定水平的拐点处终止电化学蚀刻。在电化学蚀刻期间，扩散层减小外延层中的水平电阻，使得蚀刻部分具有足够的电位进行蚀刻。

2. 发明授权

US5643803A Production method of a semiconductor dynamic sensor 失效
标题翻译：半导体动态传感器的制作方法
公开(公告)号：US5643803A
公开(公告)日：1997-07-01
申请号：US122164
申请日：1993-09-17
申请人： Tsuyoshi Fukada , Yoshimi Yoshino , Hiroshige Sugito , Minekazu Sakai
发明人： Tsuyoshi Fukada , Yoshimi Yoshino , Hiroshige Sugito , Minekazu Sakai
IPC分类号： G01P15/08 , G01P15/12 , H01L21/3063 , C25F3/12
CPC分类号： G01P15/0802 , G01P15/123 , G01P15/124 , H01L21/3063 , Y10S438/924
摘要： It is intended to provide an etching method for semiconductor devices in which the etching depth or the thickness of a thin thickness portion can be precisely controlled. According to experiment results, when a P-type substrate in which an N-type epitaxial layer is formed is immersed in an etching solution such as KOH or the like, and a voltage for reverse bias of PN junction is applied between an electrode plate opposing the substrate and the epitaxial layer to perform electrochemical etching, it has been found that the distance from the PN junction plane to the etching stop position is approximately equal to a depletion layer width at the substrate side of the PN junction portion. Namely, the etching stops at the forward end of the depletion layer. Therefore, the junction depletion layer width at the substrate side is controlled to be a size obtained by subtracting a necessary depth for etching from a thickness of the semiconductor substrate except for the semiconductor layer, so that the etching depth or the thickness of the thin thickness portion remaining after etching can be precisely controlled.
摘要翻译：旨在为半导体器件提供蚀刻方法，其中可以精确地控制蚀刻深度或厚度厚度部分的厚度。根据实验结果，当将形成有N型外延层的P型衬底浸入诸如KOH等的蚀刻溶液中时，将PN结的反向偏压施加在相对的电极板之间衬底和外延层进行电化学蚀刻，已经发现从PN结面到蚀刻停止位置的距离近似等于PN结部分的衬底侧的耗尽层宽度。也就是说，蚀刻在耗尽层的前端停止。因此，将衬底侧的结耗尽层宽度控制为通过从除了半导体层之外的半导体衬底的厚度减去所需的蚀刻深度获得的尺寸，使得蚀刻深度或厚度厚度可以精确地控制蚀刻后残留的部分。

3. 发明授权

US5408112A Semiconductor strain sensor having improved resistance to bonding strain effects 失效
标题翻译：半导体应变传感器具有改善的耐结合应变效应
公开(公告)号：US5408112A
公开(公告)日：1995-04-18
申请号：US91068
申请日：1993-07-14
申请人： Akira Tai , Toshitaka Yamada , Yoshinori Fujihashi , Tsuyoshi Fukada , Hirohito Shioya , Yoshimi Yoshino , Hiroshige Sugito
发明人： Akira Tai , Toshitaka Yamada , Yoshinori Fujihashi , Tsuyoshi Fukada , Hirohito Shioya , Yoshimi Yoshino , Hiroshige Sugito
IPC分类号： G01B7/16 , G01P15/08 , G01P15/12 , H01L29/84
CPC分类号： G01B7/20 , G01P15/0802 , G01P15/123 , G01P2015/0828 , H01L2224/48091 , H01L2924/10253
摘要： A semiconductor strain sensor includes a base, a peripheral section, a central section and a flexible beam. The peripheral section is bent to the base. Bonding strain is generated at a bonding portion between the base and the peripheral section. The central section extends from the peripheral section. The flexible beam extends from the central section and includes a strain detecting element. The strain detecting element changes its electric characteristic when strain is applied thereto. A thickness of the flexible beam is thinner than that of the central section. The bonding strain is transmitted from the bonding portion to the strain detecting element through a transmission path. The transmission path is bent. The bonding strain is attenuated because it is dispersed at a bending portion of the transmission path. The sensor accurately detects the strain to be detected without a bad influence of the bonding strain.
摘要翻译：半导体应变传感器包括基座，外围部分，中心部分和柔性梁。外围部分弯曲到基部。在基部和周边部之间的接合部分产生接合应变。中央部分从外围部分延伸。柔性梁从中心部分延伸并且包括应变检测元件。当应变应变时，应变检测元件改变其电特性。柔性梁的厚度比中央部分的厚度薄。接合应变通过传输路径从结合部分传递到应变检测元件。传输路径弯曲。粘合应变由于分散在传输路径的弯曲部分而衰减。传感器精确地检测待检测的应变，而不受粘合应变的不良影响。

4. 发明授权

US4867561A Apparatus for optically detecting an extraneous matter on a translucent shield 失效
标题翻译：用于光学检测半透明屏蔽上的外来物质的装置
公开(公告)号：US4867561A
公开(公告)日：1989-09-19
申请号：US87168
申请日：1987-08-18
申请人： Tetsuo Fujii , Hirohito Shioya , Tiaki Mizuno , Tadashi Kamada , Yasuaki Makino , Yoshimi Yoshino , Seiichiro Otake
发明人： Tetsuo Fujii , Hirohito Shioya , Tiaki Mizuno , Tadashi Kamada , Yasuaki Makino , Yoshimi Yoshino , Seiichiro Otake
IPC分类号： B60H1/00 , B60S1/08
CPC分类号： B60S1/0822 , B60H1/00785 , B60S1/0837 , G06K9/00791 , Y10S15/15
摘要： An apparatus for optically detecting the attachment state of extraneous matters to a translucent shield member. The optically detecting apparatus comprises a light-emitting unit having a plurality of light-emitting elements each emitting a light ray toward the translucent shield member, a photoelectric transducer unit having a plurality of transducer elements each receiving each of the light rays reflected on the translucent shield member, and a data processing unit coupled to the transducer unit. The transducer unit generates detection signals corresponding to the quantities of the received light rays and the data processing unit successively compares the level of each of the detection signals with a predetermined level to produce binary signals in accordance with the results of the comparison so that a binary signal pattern is defined at the respective transducer elements. The data processing unit determines the attachment state of the extraneous matters to the translucent shield member by comparing the defined binary signal pattern with a reference pattern.
摘要翻译：一种用于光学地检测外来物质到半透明屏蔽构件的附着状态的装置。光学检测装置包括具有多个发光元件的发光单元，每个发光元件朝向半透明屏蔽构件发射光线;光电变换器单元，具有多个换能器元件，每个换能器元件接收在半透明屏蔽构件上反射的每个光线屏蔽构件和耦合到换能器单元的数据处理单元。换能器单元产生对应于接收光线的量的检测信号，并且数据处理单元根据比较结果将每个检测信号的电平与预定电平连续地进行比较，以产生二进制信号，使得二进制在相应的换能器元件处限定信号图案。数据处理单元通过将定义的二进制信号模式与参考模式进行比较来确定外部物质对半透明屏蔽构件的附着状态。

5. 发明授权

US4139832A Glass-coated thick film resistor 失效
标题翻译：玻璃涂层厚膜电阻
公开(公告)号：US4139832A
公开(公告)日：1979-02-13
申请号：US773175
申请日：1977-03-01
申请人： Yoshimi Yoshino , Nobuyuki Sugishita
发明人： Yoshimi Yoshino , Nobuyuki Sugishita
IPC分类号： H01C17/02 , H01C1/012
CPC分类号： H01C17/02
摘要： A glas-coated thick film resistor can be obtained by coating completely with a crystallizable glass having a crystallizing temperature of 400 to 600.degree. C and consisting of 62 to 80% by weight of PbO, 5 to 31% by weight of ZnO, 5 to 18% by weight of B.sub.2 O.sub.3, 0.2 to 8% by weight of Al.sub.2 O.sub.3 and 1 to 5% by weight of SiO.sub.2.
摘要翻译：通过用结晶温度为400〜600℃的可结晶玻璃完全涂布，由62〜80重量％的PbO，5〜31重量％的ZnO，5〜5重量％ 18重量％的B 2 O 3，0.2〜8重量％的Al 2 O 3和1〜5重量％的SiO 2。

6. 发明授权

US6018996A Vibration type angular velocity detector 失效
标题翻译：振动型角速度检测器
公开(公告)号：US6018996A
公开(公告)日：2000-02-01
申请号：US90994
申请日：1998-06-05
申请人： Yasushi Matsuhiro , Takeshi Ito , Takayuki Ishikawa , Yoshimi Yoshino
发明人： Yasushi Matsuhiro , Takeshi Ito , Takayuki Ishikawa , Yoshimi Yoshino
IPC分类号： G01C19/56 , G01C19/5614 , G01P9/00
CPC分类号： G01C19/5649
摘要： The output of a synchronous detector is made precise by reducing the offset included in the outputs of detecting piezoelectric elements. This is carried out by applying one y-axis direction exciting force to one movable piece from one pair of driving piezoelectric elements and another y-axis direction exciting force to another movable piece from another pair of driving piezoelectric elements.
摘要翻译：通过减少包含在检测压电元件的输出中的偏移，使同步检测器的输出精确。这是通过从一对驱动压电元件向一个可动件施加一个y轴方向激励力，并且通过从另一对驱动压电元件向另一个可动件施加另一个y轴方向激励力来进行的。

7. 发明授权

US5262666A Semiconductor device with a nickel alloy protective resistor 失效
标题翻译：具有镍合金保护电阻的半导体器件
公开(公告)号：US5262666A
公开(公告)日：1993-11-16
申请号：US831094
申请日：1992-02-10
申请人： Yoshimi Yoshino , Hideto Morimoto , Kenichi Ao
发明人： Yoshimi Yoshino , Hideto Morimoto , Kenichi Ao
IPC分类号： G01R33/09 , H01L27/02 , H01L27/22 , H01L29/82 , H01L29/96
CPC分类号： H01L27/0288 , G01R33/09 , H01L27/22
摘要： A semiconductor device including a substrate, a semiconductor element formed on the substrate, a terminal formed on the substrate and electrically connected to the semiconductor element, and a protective resistor formed on the substrate and electrically connected between the semiconductor element and the terminal. The resistor is composed of a ferromagnetic magnetoresistive material including Ni alloy. The device may be extended to detect magnetism by adding a magnetoresistive element composed of a ferromagnetic magnetoresistive material including the same Ni alloy as for the protective resistor and deposited at the same time. The device is superior in an anti-noise characteristic and is integrated. Furthermore, the device for detecting magnetism is formed with a lower cost.
摘要翻译：一种半导体器件，包括基板，形成在基板上的半导体元件，形成在基板上并与半导体元件电连接的端子，以及形成在基板上并电连接在半导体元件和端子之间的保护电阻。电阻由包含Ni合金的铁磁磁阻材料构成。可以通过添加由包含与保护电阻器相同的Ni合金并且同时沉积的铁磁性磁阻材料构成的磁阻元件来扩展器件以检测磁性。该器件具有优越的抗噪声特性并集成。此外，以较低的成本形成用于检测磁性的装置。

8. 发明授权

US4937521A Current detecting device using ferromagnetic magnetoresistance element 失效
标题翻译：使用铁磁磁阻元件的电流检测装置
公开(公告)号：US4937521A
公开(公告)日：1990-06-26
申请号：US216430
申请日：1988-07-07
申请人： Yoshimi Yoshino , Tatuya Kakehi , Hiroshi Sakurai , Kenichi Ao , Toshikazu Arasuna , Ichiroh Izawa
发明人： Yoshimi Yoshino , Tatuya Kakehi , Hiroshi Sakurai , Kenichi Ao , Toshikazu Arasuna , Ichiroh Izawa
IPC分类号： G01R15/20 , G01R17/10
CPC分类号： G01R15/205 , G01R17/105
摘要： A current detecting device comprises a substrate, a magnetism sensing member made of ferromagnetic magnetoresistance element, an insulating member, and a conducting member, and these members are formed by a photolithography technique such that the magnetism sensing member is electrically isolated from the conducting member by the insulating member. When a current flows into the conducting member, the magnetism sensing member responds to a magnetic field generated by the current. At this time, the resistance of the magnetism sensing member changes due to a magnetoresistance effect in accordance with the intensity of the current. Therefore, the current can be measured by detecting the resistance change. In such a current detecting device, there is no reactance component thereby achieving high sensitivity when detecting the current.

9. 发明授权

US6119518A Angular velocity sensor 失效
标题翻译：角速度传感器
公开(公告)号：US6119518A
公开(公告)日：2000-09-19
申请号：US906044
申请日：1997-08-05
申请人： Takeshi Itou , Yasushi Matsuhiro , Muneo Yorinaga , Kazushi Asami , Yoshimi Yoshino , Kazuhiko Miura
发明人： Takeshi Itou , Yasushi Matsuhiro , Muneo Yorinaga , Kazushi Asami , Yoshimi Yoshino , Kazuhiko Miura
IPC分类号： G01C19/56 , G01C19/5621 , G01C19/5628 , G01P9/00
CPC分类号： G01C19/5607
摘要： An angular velocity sensor includes a tuning-fork oscillator having a pair of arms jointed by a trunk, the pair of arms extending in parallel to each other, first and second driving piezoelectric elements arranged only on one surface of the trunk with a gap therebetween in an extending direction of the arms, and angular velocity detecting piezoelectric elements arranged on surfaces of the arms in parallel with the one surface of the trunk on which the first and second piezoelectric elements are arranged.
摘要翻译：角速度传感器包括音叉振荡器，该音叉具有一对臂，所述一对臂由主体连接，所述一对臂彼此平行地延伸，第一和第二驱动压电元件仅布置在躯干的一个表面上，其间具有间隙臂的延伸方向以及布置在臂的表面上并与第一和第二压电元件布置在其上的主体的一个表面平行的角速度检测压电元件。

10. 发明授权

US5551586A Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device 失效
标题翻译：一种使用电磁转换装置的电磁转换装置和位移检测器的制造方法
公开(公告)号：US5551586A
公开(公告)日：1996-09-03
申请号：US293966
申请日：1994-08-24
申请人： Hirofumi Uenoyama , Kenichi Ao , Yasutoshi Suzuki , Yoshimi Yoshino , Motofumi Suzuki
发明人： Hirofumi Uenoyama , Kenichi Ao , Yasutoshi Suzuki , Yoshimi Yoshino , Motofumi Suzuki
IPC分类号： G01B7/00 , C23C28/00 , G01D5/14 , G01D5/16 , G01D5/18 , G01P3/487 , G01R33/09 , H01L27/22 , B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： G01D5/145 , B82Y25/00 , C23C28/00 , G01P3/487 , G01R33/093 , H01L27/22
摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.
摘要翻译：一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。磁电转换装置位于IC芯片上。这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十几十埃。

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