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1. 发明授权

US6119518A Angular velocity sensor 失效
标题翻译：角速度传感器
公开(公告)号：US6119518A
公开(公告)日：2000-09-19
申请号：US906044
申请日：1997-08-05
申请人： Takeshi Itou , Yasushi Matsuhiro , Muneo Yorinaga , Kazushi Asami , Yoshimi Yoshino , Kazuhiko Miura
发明人： Takeshi Itou , Yasushi Matsuhiro , Muneo Yorinaga , Kazushi Asami , Yoshimi Yoshino , Kazuhiko Miura
IPC分类号： G01C19/56 , G01C19/5621 , G01C19/5628 , G01P9/00
CPC分类号： G01C19/5607
摘要： An angular velocity sensor includes a tuning-fork oscillator having a pair of arms jointed by a trunk, the pair of arms extending in parallel to each other, first and second driving piezoelectric elements arranged only on one surface of the trunk with a gap therebetween in an extending direction of the arms, and angular velocity detecting piezoelectric elements arranged on surfaces of the arms in parallel with the one surface of the trunk on which the first and second piezoelectric elements are arranged.
摘要翻译：角速度传感器包括音叉振荡器，该音叉具有一对臂，所述一对臂由主体连接，所述一对臂彼此平行地延伸，第一和第二驱动压电元件仅布置在躯干的一个表面上，其间具有间隙臂的延伸方向以及布置在臂的表面上并与第一和第二压电元件布置在其上的主体的一个表面平行的角速度检测压电元件。

2. 发明授权

US6116087A Angular velocity sensor 有权
标题翻译：角速度传感器
公开(公告)号：US6116087A
公开(公告)日：2000-09-12
申请号：US208451
申请日：1998-12-10
申请人： Kazushi Asami , Takayuki Ishikawa , Muneo Yorinaga , Yoshimi Yoshino
发明人： Kazushi Asami , Takayuki Ishikawa , Muneo Yorinaga , Yoshimi Yoshino
IPC分类号： G01C19/56 , G01C19/5607 , G01P9/04
CPC分类号： G01C19/5614 , G01C19/5621
摘要： An angular velocity sensor comprises a driving element, a detecting element, and a feedback element, all of which are disposed on an element forming face of an oscillator. An electrostatic capacitance of the feedback element is set to be equal to that of the detecting element. As a result, a synchronous detection circuit can reduce the offset signal due to a phase difference between signals from the feedback element and the detecting element.
摘要翻译：角速度传感器包括驱动元件，检测元件和反馈元件，它们都设置在振荡器的元件形成面上。将反馈元件的静电电容设定为与检测元件相同。结果，同步检测电路可以由于来自反馈元件和检测元件的信号之间的相位差而减小偏移信号。

3. 发明授权

US5536364A Process of plasma etching silicon 失效
标题翻译：等离子体蚀刻硅的工艺
公开(公告)号：US5536364A
公开(公告)日：1996-07-16
申请号：US253704
申请日：1994-06-03
申请人： Takahiko Yoshida , Kazushi Asami , Muneo Yorinaga , Yoshimi Yoshino
发明人： Takahiko Yoshida , Kazushi Asami , Muneo Yorinaga , Yoshimi Yoshino
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/3065 , H01L21/3081 , Y10S438/945
摘要： A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode-coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing in that an etchant is a mixed gas of sulfur hexafluoride and oxygen and an etching mask covering the substrate, except for a portion where the recess or opening is to be formed, is made of chromium or a chromium compound. Preferably the distance between the electrodes is 10 to 30 mm, the volume ratio of sulfur hexafluoride to oxygen is 90:10 to 60:40, the pressure of the etchant gas is 0.15 to 0.4 Torr (20 to 53 Pa), and the temperature of the substrate is not less than 40.degree. C.
摘要翻译：一种等离子体蚀刻工艺，用于通过在阳极耦合的平面型等离子体蚀刻装置中的一对电极之间产生等离子体并且利用等离子体蚀刻位于其中一个电极上的硅衬底，在硅衬底上形成凹部或开口，其特征在于，蚀刻剂是六氟化硫和氧气的混合气体，除了要形成凹部或开口的部分之外，覆盖基板的蚀刻掩模由铬或铬化合物制成。优选地，电极之间的距离为10〜30mm，六氟化硫与氧的体积比为90:10〜60:40，蚀刻剂气体的压力为0.15〜0.4乇（20〜53Pa），温度的基材不低于40℃

4. 发明授权

US06010919A Method for manufacturing semiconductor devices by use of dry etching 失效
标题翻译：使用干蚀刻制造半导体器件的方法
公开(公告)号：US06010919A
公开(公告)日：2000-01-04
申请号：US832231
申请日：1997-04-03
申请人： Yasushi Matsuhiro , Kazushi Asami , Yoshimi Yoshino
发明人： Yasushi Matsuhiro , Kazushi Asami , Yoshimi Yoshino
IPC分类号： H01L41/311 , B81C1/00 , C23F4/00 , G01C19/56 , G01C19/5621 , G01C19/5628 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L41/08 , H01L41/22 , H01L49/00 , H01L21/00
CPC分类号： G01C19/5628 , B81C1/00626 , G01C19/5621 , H01L21/31138 , B81B2201/0235 , B81C2201/0132
摘要： A manufacturing method of semiconductor devices adaptable for use in microelectronics devices such as angular-rate sensors includes the steps of preparing a silicon wafer having a lamination of a p-type silicon substrate and an n-type epitaxial layer as formed thereon, defining on a specified surface of the wafer a plurality of recess portions each having a reduced-thickness portion on the opposite surface side which consists of the epitaxial layer, forming plural through-going holes in each reduced-thickness portion by causing a gel- or oil-like coolant medium made of a thermally conductive material to be disposed in contact with one surface of the reduced-thickness portion of the silicon substrate and by effecting dry etching of certain region from the other surface of the reduced-thickness portion, and thereafter removing the medium. This medium serves to absorb and dissipate heat generated at the reduced-thickness portion during the dry etching.
摘要翻译：适用于诸如角速率传感器的微电子器件的半导体器件的制造方法包括以下步骤：制备具有在其上形成的p型硅衬底和n型外延层的叠层的硅晶片，晶片的指定表面具有多个凹部，每个凹部具有由外延层组成的相对表面侧上的厚度减小的部分，通过使凝胶或油状形成在每个厚度减小的部分中形成多个贯通孔由导热材料制成的冷却剂介质被设置成与硅衬底的厚度减小的部分的一个表面接触，并且通过对厚度较小的部分的另一个表面进行某些区域的干蚀刻，然后除去介质。该介质用于吸收和散发在干蚀刻期间在减薄厚度部分产生的热量。

5. 发明授权

US6018996A Vibration type angular velocity detector 失效
标题翻译：振动型角速度检测器
公开(公告)号：US6018996A
公开(公告)日：2000-02-01
申请号：US90994
申请日：1998-06-05
申请人： Yasushi Matsuhiro , Takeshi Ito , Takayuki Ishikawa , Yoshimi Yoshino
发明人： Yasushi Matsuhiro , Takeshi Ito , Takayuki Ishikawa , Yoshimi Yoshino
IPC分类号： G01C19/56 , G01C19/5614 , G01P9/00
CPC分类号： G01C19/5649
摘要： The output of a synchronous detector is made precise by reducing the offset included in the outputs of detecting piezoelectric elements. This is carried out by applying one y-axis direction exciting force to one movable piece from one pair of driving piezoelectric elements and another y-axis direction exciting force to another movable piece from another pair of driving piezoelectric elements.
摘要翻译：通过减少包含在检测压电元件的输出中的偏移，使同步检测器的输出精确。这是通过从一对驱动压电元件向一个可动件施加一个y轴方向激励力，并且通过从另一对驱动压电元件向另一个可动件施加另一个y轴方向激励力来进行的。

6. 发明授权

US5525549A Method for producing an acceleration sensor 失效
标题翻译：加速度传感器的制造方法
公开(公告)号：US5525549A
公开(公告)日：1996-06-11
申请号：US49801
申请日：1993-04-21
申请人： Tsuyoshi Fukada , Yoshimi Yoshino , Yukihiko Tanizawa
发明人： Tsuyoshi Fukada , Yoshimi Yoshino , Yukihiko Tanizawa
IPC分类号： B81B3/00 , G01L9/00 , G01P15/08 , G01P15/12 , H01L21/3063 , H01L21/78 , H01L21/64
CPC分类号： B81C1/00888 , B81C1/00158 , G01L9/0055 , G01P15/0802 , G01P15/123 , H01L21/3063 , H01L21/78 , B81B2201/0235 , B81C2201/0114 , B81C2201/053 , Y10S148/028 , Y10S148/159 , Y10S438/977
摘要： A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device. The electrochemical etching of the wafer is carried out after the formation of the aluminum film by immersing the wafer in a KOH aqueous solution and by supplying electricity through the aluminum film. The electrochemical etching is terminated at an inflection point where an etching current inflects to a constant level from a peak level. During the electrochemical etching, the diffusion layer reduces horizontal resistance in the epitaxial layer, so that the etched parts receive a sufficient potential to perform the etching.
摘要翻译：一种能够解决与用于电化学蚀刻的金属薄膜切割相关的问题的半导体器件的制造方法。根据该方法，在p型单晶硅晶片上形成n型外延薄层。在外延层上的划线区域中形成n +型扩散层。在对应于晶片的预定部分的外延层的区域中形成n +型扩散层。在扩散层上形成铝膜。铝膜具有用于通过切割刀片的间隙。通过供电通过铝膜和扩散层对晶片的一部分进行电化学蚀刻，以留下外延层的部分。晶片沿着划线区切成芯片。每个芯片形成单独的半导体器件。通过将晶片浸入KOH水溶液中并通过铝膜供电，在形成铝膜之后进行晶片的电化学蚀刻。在蚀刻电流从峰值水平变为恒定水平的拐点处终止电化学蚀刻。在电化学蚀刻期间，扩散层减小外延层中的水平电阻，使得蚀刻部分具有足够的电位进行蚀刻。

7. 发明授权

US4867561A Apparatus for optically detecting an extraneous matter on a translucent shield 失效
标题翻译：用于光学检测半透明屏蔽上的外来物质的装置
公开(公告)号：US4867561A
公开(公告)日：1989-09-19
申请号：US87168
申请日：1987-08-18
申请人： Tetsuo Fujii , Hirohito Shioya , Tiaki Mizuno , Tadashi Kamada , Yasuaki Makino , Yoshimi Yoshino , Seiichiro Otake
发明人： Tetsuo Fujii , Hirohito Shioya , Tiaki Mizuno , Tadashi Kamada , Yasuaki Makino , Yoshimi Yoshino , Seiichiro Otake
IPC分类号： B60H1/00 , B60S1/08
CPC分类号： B60S1/0822 , B60H1/00785 , B60S1/0837 , G06K9/00791 , Y10S15/15
摘要： An apparatus for optically detecting the attachment state of extraneous matters to a translucent shield member. The optically detecting apparatus comprises a light-emitting unit having a plurality of light-emitting elements each emitting a light ray toward the translucent shield member, a photoelectric transducer unit having a plurality of transducer elements each receiving each of the light rays reflected on the translucent shield member, and a data processing unit coupled to the transducer unit. The transducer unit generates detection signals corresponding to the quantities of the received light rays and the data processing unit successively compares the level of each of the detection signals with a predetermined level to produce binary signals in accordance with the results of the comparison so that a binary signal pattern is defined at the respective transducer elements. The data processing unit determines the attachment state of the extraneous matters to the translucent shield member by comparing the defined binary signal pattern with a reference pattern.
摘要翻译：一种用于光学地检测外来物质到半透明屏蔽构件的附着状态的装置。光学检测装置包括具有多个发光元件的发光单元，每个发光元件朝向半透明屏蔽构件发射光线;光电变换器单元，具有多个换能器元件，每个换能器元件接收在半透明屏蔽构件上反射的每个光线屏蔽构件和耦合到换能器单元的数据处理单元。换能器单元产生对应于接收光线的量的检测信号，并且数据处理单元根据比较结果将每个检测信号的电平与预定电平连续地进行比较，以产生二进制信号，使得二进制在相应的换能器元件处限定信号图案。数据处理单元通过将定义的二进制信号模式与参考模式进行比较来确定外部物质对半透明屏蔽构件的附着状态。

8. 发明授权

US4139832A Glass-coated thick film resistor 失效
标题翻译：玻璃涂层厚膜电阻
公开(公告)号：US4139832A
公开(公告)日：1979-02-13
申请号：US773175
申请日：1977-03-01
申请人： Yoshimi Yoshino , Nobuyuki Sugishita
发明人： Yoshimi Yoshino , Nobuyuki Sugishita
IPC分类号： H01C17/02 , H01C1/012
CPC分类号： H01C17/02
摘要： A glas-coated thick film resistor can be obtained by coating completely with a crystallizable glass having a crystallizing temperature of 400 to 600.degree. C and consisting of 62 to 80% by weight of PbO, 5 to 31% by weight of ZnO, 5 to 18% by weight of B.sub.2 O.sub.3, 0.2 to 8% by weight of Al.sub.2 O.sub.3 and 1 to 5% by weight of SiO.sub.2.
摘要翻译：通过用结晶温度为400〜600℃的可结晶玻璃完全涂布，由62〜80重量％的PbO，5〜31重量％的ZnO，5〜5重量％ 18重量％的B 2 O 3，0.2〜8重量％的Al 2 O 3和1〜5重量％的SiO 2。

9. 发明授权

US5262666A Semiconductor device with a nickel alloy protective resistor 失效
标题翻译：具有镍合金保护电阻的半导体器件
公开(公告)号：US5262666A
公开(公告)日：1993-11-16
申请号：US831094
申请日：1992-02-10
申请人： Yoshimi Yoshino , Hideto Morimoto , Kenichi Ao
发明人： Yoshimi Yoshino , Hideto Morimoto , Kenichi Ao
IPC分类号： G01R33/09 , H01L27/02 , H01L27/22 , H01L29/82 , H01L29/96
CPC分类号： H01L27/0288 , G01R33/09 , H01L27/22
摘要： A semiconductor device including a substrate, a semiconductor element formed on the substrate, a terminal formed on the substrate and electrically connected to the semiconductor element, and a protective resistor formed on the substrate and electrically connected between the semiconductor element and the terminal. The resistor is composed of a ferromagnetic magnetoresistive material including Ni alloy. The device may be extended to detect magnetism by adding a magnetoresistive element composed of a ferromagnetic magnetoresistive material including the same Ni alloy as for the protective resistor and deposited at the same time. The device is superior in an anti-noise characteristic and is integrated. Furthermore, the device for detecting magnetism is formed with a lower cost.
摘要翻译：一种半导体器件，包括基板，形成在基板上的半导体元件，形成在基板上并与半导体元件电连接的端子，以及形成在基板上并电连接在半导体元件和端子之间的保护电阻。电阻由包含Ni合金的铁磁磁阻材料构成。可以通过添加由包含与保护电阻器相同的Ni合金并且同时沉积的铁磁性磁阻材料构成的磁阻元件来扩展器件以检测磁性。该器件具有优越的抗噪声特性并集成。此外，以较低的成本形成用于检测磁性的装置。

10. 发明授权

US4937521A Current detecting device using ferromagnetic magnetoresistance element 失效
标题翻译：使用铁磁磁阻元件的电流检测装置
公开(公告)号：US4937521A
公开(公告)日：1990-06-26
申请号：US216430
申请日：1988-07-07
申请人： Yoshimi Yoshino , Tatuya Kakehi , Hiroshi Sakurai , Kenichi Ao , Toshikazu Arasuna , Ichiroh Izawa
发明人： Yoshimi Yoshino , Tatuya Kakehi , Hiroshi Sakurai , Kenichi Ao , Toshikazu Arasuna , Ichiroh Izawa
IPC分类号： G01R15/20 , G01R17/10
CPC分类号： G01R15/205 , G01R17/105
摘要： A current detecting device comprises a substrate, a magnetism sensing member made of ferromagnetic magnetoresistance element, an insulating member, and a conducting member, and these members are formed by a photolithography technique such that the magnetism sensing member is electrically isolated from the conducting member by the insulating member. When a current flows into the conducting member, the magnetism sensing member responds to a magnetic field generated by the current. At this time, the resistance of the magnetism sensing member changes due to a magnetoresistance effect in accordance with the intensity of the current. Therefore, the current can be measured by detecting the resistance change. In such a current detecting device, there is no reactance component thereby achieving high sensitivity when detecting the current.

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