专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06285699B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06285699B1
公开(公告)日：2001-09-04
申请号：US09163395
申请日：1998-09-30
申请人： Yumi Naito , Satoru Okada , Tsuyoshi Fujimoto
发明人： Yumi Naito , Satoru Okada , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/2231 , H01S5/3432
摘要： On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.
摘要翻译：在n-GaAs衬底上依次形成n-GaAs缓冲层，n-AlGaAs覆层，非掺杂InGaAs有源层，p-Al x Ga 1-x As包层，p-GaAs接触层，具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。在电流阻挡层的有源层侧界面，形成了循环凸起和凹陷形状的衍射光栅，但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中，即，电流注入区域。以这种方式，可以实现低振荡阈值，高振荡效率，高可靠性，长寿命和稳定的振荡波长的半导体激光器件。

2. 发明授权

US06546032B1 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US06546032B1
公开(公告)日：2003-04-08
申请号：US09644080
申请日：2000-08-23
申请人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
发明人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/34313 , H01S5/34353
摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.
摘要翻译：在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

3. 发明授权

US06171878B2 Method of fabricating semiconductor laser using selective growth 有权
标题翻译：使用选择性增长制造半导体激光器的方法
公开(公告)号：US06171878B2
公开(公告)日：2001-01-09
申请号：US09157246
申请日：1998-09-18
申请人： Tsuyoshi Fujimoto , Yumi Naito , Atsushi Okubo , Yoshikazu Yamada
发明人： Tsuyoshi Fujimoto , Yumi Naito , Atsushi Okubo , Yoshikazu Yamada
IPC分类号： H01S302
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/2077 , H01S5/2206 , H01S5/34313 , H01S5/3432 , H01S2304/00
摘要： In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.
摘要翻译：在其中在有源层的两个表面上分别形成一对导光层的自对准结构半导体激光器中，具有比有源层宽的带隙的导光层，一对包覆层是形成为夹持有源层和导光层，包层具有比导光层的带隙宽的带隙，在有源层和导光层之间分别形成一对载流子阻挡层，具有比有源层和导光层的带隙宽的带隙的载流子阻挡层和具有条状窗口的电流阻挡层嵌入到至少一个导光层中，电流阻挡层是通过选择性生长形成。以这种方式，可以精确地形成电流阻挡层的窗口，并且可以提高制造产率，同时避免对其他层的不良影响。

4. 发明授权

US5949807A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5949807A
公开(公告)日：1999-09-07
申请号：US860489
申请日：1997-09-22
申请人： Tsuyoshi Fujimoto , Yumi Naito
发明人： Tsuyoshi Fujimoto , Yumi Naito
IPC分类号： H01S5/20 , H01S5/30 , H01S5/32 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/305 , H01S5/309 , H01S5/3211
摘要： As shown in FIG. 1, on a semiconductor substrate 20 formed in sequence are a second n-type clad layer 11, a first n-type clad layer 12, an n-type carrier blocking layer 13, an active layer 14, a p-type carrier blocking layer 15, a first p-type clad layer 16, a second p-type clad layer 17, a current constriction layer 18, and a p-type contact layer 19. The carrier blocking layers 13 and 15 are doped to a high doping concentration of more than 1.times.10.sup.18 cm.sup.-3. The first clad layers 12 and 16 and the second clad layers 11 and 17 are doped to a low doping concentration of less than 3.times.10.sup.17 cm.sup.-3. The p-type carrier blocking layer 15 is doped with carbon or magnesium which is low in the diffusivity. Accordingly, the carriers are successfully confined in the active layer 14 thus to suppress the internal loss and the electrical resistance, whereby a high-efficiency, high-output semiconductor laser device can be obtained.
摘要翻译： PCT No.PCT / JP95 / 02677 Sec。 371日期：1997年9月22日 102（e）日期1997年9月22日PCT 1995年12月25日PCT PCT。出版物WO96 / 20522 日期：1996年7月4日如图1所示，在依次形成的半导体基板20上，设置有第二n型覆盖层11，第一n型覆盖层12，n型载流子阻挡层13，有源层14，p型载流子阻挡层如图15所示，第一p型覆盖层16，第二p型覆盖层17，电流收缩层18和p型接触层19.载流子阻挡层13和15被掺杂到高掺杂浓度超过1x1018厘米-3。第一包层12和16以及第二包层11和17被掺杂到低于3×10 17 cm -3的低掺杂浓度。 p型载流子阻挡层15掺杂有扩散性低的碳或镁。因此，载流子被成功地限制在有源层14中，从而抑制内部损耗和电阻，由此可以获得高效率，高输出的半导体激光器件。

5. 发明授权

US06175582B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06175582B1
公开(公告)日：2001-01-16
申请号：US09199435
申请日：1998-11-25
申请人： Yumi Naito , Yasuo Oeda , Tsuyoshi Fujimoto
发明人： Yumi Naito , Yasuo Oeda , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/3213 , H01S5/3432
摘要： Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.
摘要翻译：导光层分别形成在有源层的两个表面上，这些导光层的带隙宽于有源层，n型包覆层和p型覆层分别形成为夹层其间的有源层和导光层分别形成在该有源层与导光层之间的这些包层具有比导光层宽的带隙和载流子阻挡层的载流子阻挡层，间隙宽于有源层和光导层的宽度。 p型覆层的折射率比n型覆层的折射率低。通过这样的结构，内部损耗被限制在低水平，随着自由载流子吸收减小，并且半导体激光器件的电阻和热电阻降低，结果激光器件的效率和输出功率提高。

6. 发明授权

US6118799A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US6118799A
公开(公告)日：2000-09-12
申请号：US817602
申请日：1997-06-10
申请人： Atsushi Okubo , Yoshikazu Yamada , Tsuyoshi Fujimoto , Satoru Okada , Yumi Naito , Kiyofumi Muro
发明人： Atsushi Okubo , Yoshikazu Yamada , Tsuyoshi Fujimoto , Satoru Okada , Yumi Naito , Kiyofumi Muro
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2238 , H01S5/204 , H01S5/222 , H01S5/3432
摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.
摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28，由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

7. 发明授权

US09742951B2 Lens unit, image reading device, and image forming apparatus 有权
公开(公告)号：US09742951B2
公开(公告)日：2017-08-22
申请号：US14527988
申请日：2014-10-30
申请人： Atsushi Sugai , Tsuyoshi Fujimoto
发明人： Atsushi Sugai , Tsuyoshi Fujimoto
IPC分类号： G02B9/04 , H04N1/028 , G02B7/02
CPC分类号： H04N1/028 , G02B7/021 , G02B7/025 , G02B7/028 , H04N2201/0081 , H04N2201/0094 , H04N2201/02431 , H04N2201/02458
摘要： A lens unit includes a tube lens; a single lens arranged at a downstream side with respect to the tube lens in an optical incidence direction; and a supporting member that supports the tube lens and the single lens. Reflection light from a document is condensed on an image sensor by the tube lens and the single lens to form an image. An end surface part, not facing the tube lens, of the single lens is in direct contact with the supporting member.

8. 发明申请

US20130135859A1 LIGHT IRRADIATOR, IMAGE SCANNER, AND IMAGE FORMING APPARATUS 失效
标题翻译：光照射器，图像扫描仪和图像形成装置
公开(公告)号：US20130135859A1
公开(公告)日：2013-05-30
申请号：US13678936
申请日：2012-11-16
申请人： Tokiko INOUE , Mitsuru Nakajima , Tsuyoshi Fujimoto , Akihiro Iwamatsu , Chihiro Tanaka
发明人： Tokiko INOUE , Mitsuru Nakajima , Tsuyoshi Fujimoto , Akihiro Iwamatsu , Chihiro Tanaka
IPC分类号： F21V8/00
CPC分类号： G02B6/0011 , G03G15/04054 , H04N1/02481 , H04N1/02855 , H04N1/02865 , H04N2201/02435
摘要： A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.
摘要翻译：一种包括以直线排列的多点光源的光照射器，沿点光源发射的光束的发射方向设置在点光源前面的透光导光部件，导光部件引导沿预定方向的光束朝向待照射的表面; 以及设置在导光部件的光入射面上且与点光源相同的方向配置的朝向点光源突出的两个以上的突起。导光构件和点光源被定位成使得提供给导光构件的突起和点光源的照射表面之间的距离在两个位置处相等。

9. 发明申请

US20110211608A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：US20110211608A1
公开(公告)日：2011-09-01
申请号：US12998518
申请日：2008-10-31
申请人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
发明人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
IPC分类号： H01S5/34
CPC分类号： H01S5/20 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S2301/18
摘要： A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.
摘要翻译：半导体激光器元件包括有源层，n型载流子阻挡层，被布置成与有源层相邻并且具有等于或大于阻挡层的带隙宽度的带隙宽度; n型波导层布置在与其上配置有源层的n型载流子阻挡层的一侧相对的一侧，与n型载流子阻挡层相邻，配置在与n型载流子阻挡层相对的一侧上的n型覆盖层 n型波导层的配置有活性层的一侧，与n型波导层相邻，并且具有比n型波导层的带隙宽度大的带隙宽度， p型覆盖层布置在与有源层的配置有n型载流子阻挡层的一侧相对的一侧上，以与活性层相邻，并且具有大于阻挡层和n型波导层。

10. 发明授权

US06995406B2 Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device 失效
标题翻译：多光束半导体激光器，半导体发光器件和半导体器件
公开(公告)号：US06995406B2
公开(公告)日：2006-02-07
申请号：US10486050
申请日：2003-06-06
申请人： Tsuyoshi Tojo , Yoshifumi Yabuki , Shinichi Ansai , Tomonori Hino , Osamu Goto , Tsuyoshi Fujimoto , Osamu Matsumoto , Motonobu Takeya , Yoshio Oofuji
发明人： Tsuyoshi Tojo , Yoshifumi Yabuki , Shinichi Ansai , Tomonori Hino , Osamu Goto , Tsuyoshi Fujimoto , Osamu Matsumoto , Motonobu Takeya , Yoshio Oofuji
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/02276 , H01S5/042 , H01S5/0421 , H01S5/0425 , H01S5/34333 , H01S5/4031
摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
摘要翻译：在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式