专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08437375B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US08437375B2
公开(公告)日：2013-05-07
申请号：US12998518
申请日：2008-10-31
申请人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
发明人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S2301/18
摘要： A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.
摘要翻译：半导体激光元件可以包括n型覆盖层; 与n型覆盖层相邻的n型波导层; 与n型波导层相邻的n型载流子阻挡层; 活性层以及与有源层相邻的p型覆盖层。 n型覆盖层的带隙宽度可以大于n型波导层的带隙宽度。 n型载流子阻挡层的带隙宽度可以大于或等于第一和第二阻挡层的带隙宽度。 p型覆盖层的带隙宽度可以大于第一和第二阻挡层的带隙宽度和n型波导层的带隙宽度。有源层可以包括量子阱层和阻挡层。

2. 发明申请

US20110211608A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：US20110211608A1
公开(公告)日：2011-09-01
申请号：US12998518
申请日：2008-10-31
申请人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
发明人： Tsuyoshi Fujimoto , Yumi Yamada , Yuji Yamagata , Tsuyoshi Saitoh , Manabu Katahira
IPC分类号： H01S5/34
CPC分类号： H01S5/20 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S2301/18
摘要： A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.
摘要翻译：半导体激光器元件包括有源层，n型载流子阻挡层，被布置成与有源层相邻并且具有等于或大于阻挡层的带隙宽度的带隙宽度; n型波导层布置在与其上配置有源层的n型载流子阻挡层的一侧相对的一侧，与n型载流子阻挡层相邻，配置在与n型载流子阻挡层相对的一侧上的n型覆盖层 n型波导层的配置有活性层的一侧，与n型波导层相邻，并且具有比n型波导层的带隙宽度大的带隙宽度， p型覆盖层布置在与有源层的配置有n型载流子阻挡层的一侧相对的一侧上，以与活性层相邻，并且具有大于阻挡层和n型波导层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式