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1. 发明授权

US07320925B2 SOI substrate, semiconductor substrate, and method for production thereof 失效
标题翻译： SOI衬底，半导体衬底及其制造方法
公开(公告)号：US07320925B2
公开(公告)日：2008-01-22
申请号：US10858646
申请日：2004-06-02
申请人： Tsutomu Sasaki , Seiji Takayama , Atsuki Matsumura
发明人： Tsutomu Sasaki , Seiji Takayama , Atsuki Matsumura
IPC分类号： H01L21/84
CPC分类号： H01L21/26533 , H01L21/26586 , H01L21/76243 , H01L21/76267
摘要： A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region.A method for the production of an SOI substrate, includes forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, forming an opening part of a stated pattern in the protective film, implanting oxygen ions into the surface of the semiconductor substrate in a direction not perpendicular thereto, and heat treating the semiconductor substrate thereby forming a buried oxide film in the semiconductor substrate, and inducing at the step of implanting oxygen ions into the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.
摘要翻译：一种通过SIMOX技术商业生产的方法是完美的部分SOI结构，避免了掩埋氧化膜通过其表面的暴露，并且在SOI区域和非SOI区域之间不形成台阶。一种制造SOI衬底的方法，包括在由硅单晶制成的半导体衬底的表面上形成指定为用于离子注入的掩模的保护膜，在保护膜中形成所述图案的开口部分在与半导体衬底的表面不沿垂直的方向上将氧离子注入到半导体衬底的表面中，对半导体衬底进行热处理，从而在半导体衬底中形成掩埋氧化膜，并在将氧离子注入半导体表面的步骤在氧离子注入焊剂的突起与基板主体的特定方位之间形成至少两个角度的基底。

2. 发明授权

US07067402B2 Production method for SIMOX substrate and SIMOX substrate 有权
标题翻译： SIMOX基板和SIMOX基板的生产方法
公开(公告)号：US07067402B2
公开(公告)日：2006-06-27
申请号：US10473692
申请日：2002-03-28
申请人： Atsuki Matsumura , Keisuke Kawamura , Yoichi Nagatake , Seiji Takayama
发明人： Atsuki Matsumura , Keisuke Kawamura , Yoichi Nagatake , Seiji Takayama
IPC分类号： H01L21/762
CPC分类号： H01L21/76243
摘要： A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied. The SIMOX substrate has a surface silicon layer 10 to 400 nm in thickness and a buried oxide layer 60 to 250 nm in thickness.
摘要翻译：提供了通过植入氧（“SIMOX”）底物的分离及其制备方法。可以通过在低剂量范围内使用氧离子注入量来制造SIMOX基板。衬底是具有增加BOX层厚度的高质量SOI衬底。更具体地，提供SIMOX基板及其制造方法，从而通过在硅基板中注入氧离子并在其后进行高温热处理来形成掩埋氧化物层和表面硅层。通过在氧离子注入后施加高温热处理来提供掩埋氧化物层; 然后施加额外的氧离子注入，使得注入氧的分布的峰位置位于比已经形成的掩埋氧化物层和其下的衬底之间的界面低的部分。然后，进行另一种高温热处理。 SIMOX基板具有厚度为10至400nm的表面硅层和厚度为60至250nm的掩埋氧化物层。

3. 发明授权

US07204887B2 Wafer holding, wafer support member, wafer boat and heat treatment furnace 有权
标题翻译：晶圆保持，晶片支撑构件，晶片舟和热处理炉
公开(公告)号：US07204887B2
公开(公告)日：2007-04-17
申请号：US10149939
申请日：2001-10-16
申请人： Keisuke Kawamura , Tsutomu Sasaki , Atsuki Matsumura , Atsushi Ikari , Isao Hamaguchi , Yoshiharu Inoue , Koki Tanaka , Shunichi Hayashi
发明人： Keisuke Kawamura , Tsutomu Sasaki , Atsuki Matsumura , Atsushi Ikari , Isao Hamaguchi , Yoshiharu Inoue , Koki Tanaka , Shunichi Hayashi
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/68735 , H01L21/67309 , H01L21/6875 , Y10S206/832
摘要： The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.
摘要翻译：本发明提供一种能够在硅晶片的高温热处理中不降低生产率和低成本地充分抑制滑移位错的晶片保持器，晶片支撑构件，晶片舟皿和热处理炉，以及所述晶片保持器的特征在于：晶片保持器由晶片支撑板和安装在所述晶片支撑板上的三个或更多个晶片支撑构件组成，每个晶片支撑构件具有晶片支撑部分或更多个; 所述晶片支撑构件中的至少一个是倾斜晶片支撑构件，其在上表面上具有多个向上凸起的晶片支撑部分并且可相对于所述晶片支撑板倾斜; 并且晶片由至少四个晶片支撑部分支撑。

4. 发明授权

US07084459B2 SOI substrate 有权
标题翻译： SOI衬底
公开(公告)号：US07084459B2
公开(公告)日：2006-08-01
申请号：US10343273
申请日：2002-05-15
申请人： Tsutomu Sasaki , Isao Hamaguchi , Atsuki Matsumura
发明人： Tsutomu Sasaki , Isao Hamaguchi , Atsuki Matsumura
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/76243
摘要： There is provided an SOI substrate having an SOI structure with an insulating layer and a surface single crystal silicon layer successively formed on a single crystal wafer, the SOI substrate having no pit generation in the SOI layer, being producible at low cost and at high productivity and having excellent gettering capacity, wherein the SOI substrate contains nitrogen and carbon with a nitrogen content of no greater than 1×1016 atoms/cm3 and a carbon content of no greater than 1×1018 atoms/cm3.
摘要翻译：提供了具有绝缘层和连续形成在单晶晶片上的SOI结构的SOI衬底，SOI衬底在SOI层中不产生凹坑，可以低成本和高生产率生产并且具有优异的吸气能力，其中SOI衬底含有氮含量不大于1×10 16原子/ cm 3的氮和碳，碳含量不大于 1×10 18原子/ cm 3。

5. 发明授权

US06740565B2 Process for fabrication of a SIMOX substrate 有权
标题翻译：制造SIMOX基板的工艺
公开(公告)号：US06740565B2
公开(公告)日：2004-05-25
申请号：US10296858
申请日：2002-11-26
申请人： Atsuki Matsumura , Tsutomu Sasaki , Koichi Kitahara
发明人： Atsuki Matsumura , Tsutomu Sasaki , Koichi Kitahara
IPC分类号： H01L2176
CPC分类号： H01L21/76243 , H01L27/1203
摘要： There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 &OHgr;cm or greater, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 &OHgr;cm or greater.
摘要翻译：提供了一种制造SIMOX基板的方法，其中将氧离子注入到单晶硅基板中，然后进行高温热处理以形成掩埋氧化物层和表面单晶硅层，其中单晶所使用的硅衬底的平均电阻率为100Ωm或更大，并且在高温热处理的最后阶段中进行将温度保持在800℃至1250℃的预定时间的步骤，以及SIMOX基板，其中通过该方法获得的基板的平均电阻率为100Ωm以上。

6. 发明申请

US20080268613A1 Semiconductor Substrate And Method For Production Thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US20080268613A1
公开(公告)日：2008-10-30
申请号：US12120285
申请日：2008-05-14
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
IPC分类号： H01L21/265
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

7. 发明授权

US5710437A Radiation detecting device using superconducting tunnel junction and method of fabricating the same 失效
标题翻译：使用超导隧道结的辐射检测装置及其制造方法
公开(公告)号：US5710437A
公开(公告)日：1998-01-20
申请号：US204563
申请日：1994-03-02
申请人： Masahiko Kurakado , Toru Takahashi , Atsuki Matsumura
发明人： Masahiko Kurakado , Toru Takahashi , Atsuki Matsumura
IPC分类号： H01L39/10 , H01L39/24 , H01L29/41 , H01L29/88 , H01L31/06 , H01L31/102
CPC分类号： H01L39/10 , H01L39/2493 , Y10S505/817 , Y10S505/874
摘要： A radiation detecting device including a superconducting tunnel junction having a three-layer structure formed by depositing a lower electrode, a tunnel barrier layer, and an upper electrode in sequence. The upper electrode, the tunnel barrier layer and lower electrode have substantially aligned side walls around substantially their entire perimeters such that a cross-section of the three-layer structure along a path perpendicular to a direction of the deposition is substantially constant in shape and size along the direction of the deposition and such that no portion of the lower electrode or the upper electrode extends beyond the tunnel barrier layer. At least one of the upper electrode and the lower electrode is made of superconducting material.
摘要翻译：一种辐射检测装置，包括具有通过依次沉积下电极，隧道势垒层和上电极而形成的三层结构的超导隧道结。上电极，隧道势垒层和下电极具有基本上对齐的围绕其整个周边的侧壁，使得沿着垂直于沉积方向的路径的三层结构的横截面在形状和尺寸上基本上恒定沿着沉积的方向，并且使得下电极或上电极的任何部分不延伸超过隧道势垒层。上电极和下电极中的至少一个由超导材料制成。

8. 发明授权

US06767801B2 Simox substrate and method for production thereof 有权
标题翻译： Simox底物及其生产方法
公开(公告)号：US06767801B2
公开(公告)日：2004-07-27
申请号：US10221077
申请日：2002-09-09
申请人： Keisuke Kawamura , Atsuki Matsumura , Toshiyuki Mizutani
发明人： Keisuke Kawamura , Atsuki Matsumura , Toshiyuki Mizutani
IPC分类号： H01L2176
CPC分类号： H01L21/26533 , H01L21/324 , H01L21/76227 , H01L21/76243
摘要： A SIMOX substrate having a buried oxide layer and a surface single crystal silicon layer formed therein is produced by a method which comprises implanting oxygen ions into a silicon single crystal substrate and subsequently performing a heat treatment at an elevated temperature on the substrate. The method is characterized by performing the former stage of the heat treatment at a temperature of not lower than 1150° C. and lower than the melting point of single crystal silicon in an atmosphere obtained by adding oxygen under a partial pressure of not more than 1% to an inert gas and subsequently performing at least part of the latter stage of the heat treatment by increasing the partial pressure of oxygen within a range in which no internal oxidation is suffered to occur in the buried oxide layer. It can also be prepared by performing the former stage of the high temperature heat treatment at a temperature of not lower than 1150° C. and lower than the melting point of silicon under in inert gas atmosphere containing not more than 1 vol.% of oxygen and performing ITOX treatment of the buried oxide layer at a temperature of not more than 1300° C.
摘要翻译：通过包括将氧离子注入到硅单晶衬底中并随后在衬底上在升高的温度下进行热处理的方法来制造具有掩埋氧化物层和形成在其中的表面单晶硅层的SIMOX衬底。该方法的特征在于，在不低于1150℃的温度下进行前期的热处理，并且在通过在不大于1的分压下加入氧气获得的气氛中的单晶硅的熔点低％的惰性气体，然后通过在掩埋氧化物层内不发生内部氧化的范围内增加氧的分压来进行后段的热处理的至少一部分。也可以通过在不低于1150℃的温度下进行高温热处理的前一阶段并且低于在不超过1体积％的氧的惰性气体气氛中的硅的熔点并且在不高于1300℃的温度下进行掩埋氧化物层的ITOX处理。

9. 发明授权

US06617034B1 SOI substrate and method for production thereof 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US06617034B1
公开(公告)日：2003-09-09
申请号：US09601441
申请日：2000-08-01
申请人： Isao Hamaguchi , Atsushi Ikari , Atsuki Matsumura , Keisuke Kawamura , Takayuki Yano , Yoichi Nagatake
发明人： Isao Hamaguchi , Atsushi Ikari , Atsuki Matsumura , Keisuke Kawamura , Takayuki Yano , Yoichi Nagatake
IPC分类号： H01L21265
CPC分类号： H01L21/3226 , H01L21/26533 , H01L21/76243
摘要： A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.
摘要翻译：提供了一种高质量的SOI衬底，其允许以其提高的成品率在其上形成LSI并实现优异的电性能及其制造方法。 SOI衬底通过在硅单晶衬底上形成嵌入的氧化物层并形成用于在嵌入的氧化物层上形成器件的SOI层而获得，并且其特征在于包含不密集的凹坑状缺陷的SOI层大于5cm-2或密度小于1件/ cm2的包含针孔缺陷的嵌入式氧化物层。

10. 发明授权

US08043929B2 Semiconductor substrate and method for production thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US08043929B2
公开(公告)日：2011-10-25
申请号：US12120285
申请日：2008-05-14
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
IPC分类号： H01L21/265
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

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