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1. 发明授权

US07067402B2 Production method for SIMOX substrate and SIMOX substrate 有权
标题翻译： SIMOX基板和SIMOX基板的生产方法
公开(公告)号：US07067402B2
公开(公告)日：2006-06-27
申请号：US10473692
申请日：2002-03-28
申请人： Atsuki Matsumura , Keisuke Kawamura , Yoichi Nagatake , Seiji Takayama
发明人： Atsuki Matsumura , Keisuke Kawamura , Yoichi Nagatake , Seiji Takayama
IPC分类号： H01L21/762
CPC分类号： H01L21/76243
摘要： A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied. The SIMOX substrate has a surface silicon layer 10 to 400 nm in thickness and a buried oxide layer 60 to 250 nm in thickness.
摘要翻译：提供了通过植入氧（“SIMOX”）底物的分离及其制备方法。可以通过在低剂量范围内使用氧离子注入量来制造SIMOX基板。衬底是具有增加BOX层厚度的高质量SOI衬底。更具体地，提供SIMOX基板及其制造方法，从而通过在硅基板中注入氧离子并在其后进行高温热处理来形成掩埋氧化物层和表面硅层。通过在氧离子注入后施加高温热处理来提供掩埋氧化物层; 然后施加额外的氧离子注入，使得注入氧的分布的峰位置位于比已经形成的掩埋氧化物层和其下的衬底之间的界面低的部分。然后，进行另一种高温热处理。 SIMOX基板具有厚度为10至400nm的表面硅层和厚度为60至250nm的掩埋氧化物层。

2. 发明授权

US07320925B2 SOI substrate, semiconductor substrate, and method for production thereof 失效
标题翻译： SOI衬底，半导体衬底及其制造方法
公开(公告)号：US07320925B2
公开(公告)日：2008-01-22
申请号：US10858646
申请日：2004-06-02
申请人： Tsutomu Sasaki , Seiji Takayama , Atsuki Matsumura
发明人： Tsutomu Sasaki , Seiji Takayama , Atsuki Matsumura
IPC分类号： H01L21/84
CPC分类号： H01L21/26533 , H01L21/26586 , H01L21/76243 , H01L21/76267
摘要： A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region.A method for the production of an SOI substrate, includes forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, forming an opening part of a stated pattern in the protective film, implanting oxygen ions into the surface of the semiconductor substrate in a direction not perpendicular thereto, and heat treating the semiconductor substrate thereby forming a buried oxide film in the semiconductor substrate, and inducing at the step of implanting oxygen ions into the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.
摘要翻译：一种通过SIMOX技术商业生产的方法是完美的部分SOI结构，避免了掩埋氧化膜通过其表面的暴露，并且在SOI区域和非SOI区域之间不形成台阶。一种制造SOI衬底的方法，包括在由硅单晶制成的半导体衬底的表面上形成指定为用于离子注入的掩模的保护膜，在保护膜中形成所述图案的开口部分在与半导体衬底的表面不沿垂直的方向上将氧离子注入到半导体衬底的表面中，对半导体衬底进行热处理，从而在半导体衬底中形成掩埋氧化膜，并在将氧离子注入半导体表面的步骤在氧离子注入焊剂的突起与基板主体的特定方位之间形成至少两个角度的基底。

3. 发明授权

US5234606A Method and system for recovering wastewater 失效
标题翻译：回收废水的方法和系统
公开(公告)号：US5234606A
公开(公告)日：1993-08-10
申请号：US771973
申请日：1991-10-09
申请人： Masahiro Kazama , Masahiro Sano , Seiji Takayama
发明人： Masahiro Kazama , Masahiro Sano , Seiji Takayama
IPC分类号： C02F1/32 , C02F1/70 , C02F1/72 , C02F1/78
CPC分类号： C02F1/722 , C02F1/32 , C02F1/70 , C02F1/78 , C02F2103/06 , Y10S210/908
摘要： Raw water such as polluted ground water can be recovered to clean water through the following processes. Firstly, oxidizing agent is added to raw water to disinfect bacteria, and then after suspended solid is removed from the water, ultraviolet rays are irradiated on the water so that organic chlorine compounds can be decomposed by active oxygen generated by the irradiation of ultraviolet rays. Finally, the residual oxidizing agent remaining in the treated water is reduced by activated carbon and catalytic resin. Further, the organic chlorine compound decomposition reaction is promoted at pH of 9 or below and in a temperature range of 15 to 30.degree. C.
摘要翻译：可以通过以下过程回收污水等原水，以清洁水。首先，将氧化剂添加到原水中以对细菌进行消毒，然后从水中除去悬浮固体后，将紫外线照射在水上，使得有机氯化合物可以通过紫外线照射产生的活性氧分解。最后，残留在处理水中的残余氧化剂被活性炭和催化树脂还原。此外，有机氯化合物分解反应在pH为9以下且在15〜30℃的温度范围内被促进。

4. 发明申请

US20120032229A1 Silicon Wafer And Production Method Thereof 审中-公开
标题翻译：硅晶片及其制作方法
公开(公告)号：US20120032229A1
公开(公告)日：2012-02-09
申请号：US13191532
申请日：2011-07-27
申请人： Hiroyuki Deai , Seiji Takayama
发明人： Hiroyuki Deai , Seiji Takayama
IPC分类号： H01L29/165 , H01L29/36
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A silicon wafer contains: a silicon substrate; a first epitaxial layer on the silicon wafer, wherein the absolute value of the difference between donor and acceptor concentrations is ≧1×1018 atoms/cm3; a second epitaxial layer above the first epitaxial layer, whose conductivity type is the same as the first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentrations is ≦5×1017 atoms/cm3; wherein, by doping a lattice constant adjusting material into the first epitaxial layer, the variation amount ((a1-aSi)/aSi) of the lattice constant of the first epitaxial layer (a1) relative to the lattice constant of the silicon single crystal (aSi) as well as the variation amount ((a2-aSi)/aSi) of the lattice constant of the second epitaxial layer (a2) relative to the lattice constant of the silicon single crystal (aSi) are controlled to less than the critical lattice mismatch.
摘要翻译：硅晶片包含：硅衬底; 硅晶片上的第一外延层，其中供体和受主浓度之差的绝对值为≥1×1018原子/ cm3; 在第一外延层上方的第二外延层，其导电类型与第一外延层相同，其中供体和受体浓度之差的绝对值为5×1017原子/ cm3; 其中，通过将晶格常数调整材料掺杂到第一外延层中，第一外延层（a1）的晶格常数相对于硅单晶的晶格常数的变化量（（a1-aSi）/ aSi） aSi）以及第二外延层（a2）的晶格常数相对于硅单晶（aSi）的晶格常数的变化量（（a2-aSi）/ aSi）被控制为小于临界晶格不匹配。

5. 外观设计

USD609144S1 Hood for an automobile 有权
标题翻译：敞篷汽车
公开(公告)号：USD609144S1
公开(公告)日：2010-02-02
申请号：US29333057
申请日：2009-03-02
申请人： Seiji Takayama
设计人： Seiji Takayama

6. 发明授权

US5070191A Demethylallosamidin and a process for production thereof 失效
标题翻译：去甲基洛氯霉素及其制备方法
公开(公告)号：US5070191A
公开(公告)日：1991-12-03
申请号：US515703
申请日：1990-04-27
申请人： Yasuhiro Yamada , Shohei Sakuda , Seiji Takayama
发明人： Yasuhiro Yamada , Shohei Sakuda , Seiji Takayama
IPC分类号： A01N43/76 , A01N63/02 , C07H17/00 , C12P19/60
CPC分类号： C07H17/00 , A01N43/76 , A01N63/02 , C12P19/60 , Y10S435/886
摘要： An antifungal compound, demethylallosamidin, represented by the formula: ##STR1## is disclosed. Methods of production and antifungal compositions comprising demethylallosamidin are also provided.
摘要翻译：公开了由下式表示的抗真菌化合物，即脱甲基沙门菌素：。还提供了包含脱甲基沙门氏菌素的生产方法和抗真菌组合物。

7. 发明授权

US5413991A Allosamidin compounds 失效
标题翻译：异am啶化合物
公开(公告)号：US5413991A
公开(公告)日：1995-05-09
申请号：US830353
申请日：1992-01-31
申请人： Yasuhiro Yamada , Shohei Sakuda , Seiji Takayama
发明人： Yasuhiro Yamada , Shohei Sakuda , Seiji Takayama
IPC分类号： A01N43/76 , A61K31/70 , A61K31/7042 , A61P31/04 , A61P31/10 , A61P43/00 , B22F3/15 , B30B11/00 , C07H17/00 , C12P19/60 , C12R1/465 , H01L27/142 , H01L31/0336 , H01L31/0392 , H01L31/04 , H01L31/05
CPC分类号： C12P19/60 , A01N43/76 , C07H17/00
摘要： Novel allosamidin compounds, AJI9463A, AJI9463B and AJI9463C, represented by the following structural formula (1): ##STR1## wherein R.sub.1 and R.sub.2 are hydrogen and R.sub.3 is hydroxy (AJI9463A); R.sub.1 and R.sub.3 are hydrogen and R.sub.2 is hydroxy (AJI9463B); and R.sub.1 is methyl, R.sub.2 is hydroxy and R.sub.3 is hydrogen (AJI9463C), exhibit extremely potent inhibitory activity against chitinases from a number of sources, particularly from Candida albicans, and can be utilized as potent antifungal agents and chitinase inhibitors. Pseudo disaccharide compounds, obtained by partial hydrolysis of these compounds with an acid, also show potent inhibitory activity against chitinase, and can be utilized as antifungal agents and chitinase inhibitors.
摘要翻译：由以下结构式（1）表示的新颖的allosamidin化合物，AJI9463A，AJI9463B和AJI9463C：其中R1和R2是氢，R3是羟基（AJI9463A）;其中R1和R2是羟基。 R1和R3是氢，R2是羟基（AJI9463B）; R1为甲基，R2为羟基，R3为氢原子（AJI9463C），对许多来源，特别是白色念珠菌来源的几丁质酶具有极强的抑制活性，可用作有效的抗真菌剂和几丁质酶抑制剂。通过用酸部分水解这些化合物获得的伪二糖化合物也显示出对几丁质酶的有效抑制活性，可用作抗真菌剂和几丁质酶抑制剂。

8. 发明授权

US5104855A Demethylallosamidin and a process for production thereof 失效
标题翻译：二氯乙酰胺及其生产方法
公开(公告)号：US5104855A
公开(公告)日：1992-04-14
申请号：US741581
申请日：1991-08-26
申请人： Yasuhiro Yamada , Shohei Sakuda , Seiji Takayama
发明人： Yasuhiro Yamada , Shohei Sakuda , Seiji Takayama
IPC分类号： A01N43/76 , A01N63/02 , C07H17/00 , C12P19/60
CPC分类号： C07H17/00 , A01N43/76 , A01N63/02 , C12P19/60 , Y10S435/886
摘要： An antifungal compound, demethylallosamidin, represented by the formula: ##STR1## is disclosed. Methods of production and antifungal compositions comprising demethylallosamidin are also provided.

9. 外观设计

USD666943S1 Automobile and/or replica thereof 有权
标题翻译：汽车和/或其副本
公开(公告)号：USD666943S1
公开(公告)日：2012-09-11
申请号：US29400783
申请日：2011-09-01
申请人： Manabu Konaka , Seiji Takayama
设计人： Manabu Konaka , Seiji Takayama

10. 发明授权

US5582741A Method for treating polluted water 失效
标题翻译：污水处理方法
公开(公告)号：US5582741A
公开(公告)日：1996-12-10
申请号：US300223
申请日：1994-09-06
申请人： Yoshihiro Kenmoku , Seiji Takayama
发明人： Yoshihiro Kenmoku , Seiji Takayama
IPC分类号： B01D53/70 , C02F1/20 , C02F1/28 , C02F1/32 , C02F1/50 , C02F1/58 , C02F1/70 , C02F1/72 , C02F1/78 , C02F9/00
CPC分类号： C02F1/20 , C02F1/32 , C02F1/722 , C02F1/78 , Y10S210/908
摘要： An oxidizing agent is added to water polluted with organic compounds, especially organic chlorine compounds, disinfection is carried out, and suspended solids in the water are removed. Thereafter, ultraviolet rays are irradiated to oxidize and decompose the organic compounds, and furthermore, volatile organic compounds are separated and removed from the water. Finally, the oxidizing agents residual in the water are reduced. The oxidizing agent is separately added at two phases of disinfection and oxidization decomposition, thereby causing the decomposing efficiency of organic compounds to be much improved.
摘要翻译：向有机化合物，特别是有机氯化合物污染的水中加入氧化剂，进行消毒，并除去水中的悬浮固体。此后，照射紫外线以氧化和分解有机化合物，此外，挥发性有机化合物从水中分离和除去。最后，残留在水中的氧化剂减少。在消毒和氧化分解的两个阶段分别加入氧化剂，从而使有机化合物的分解效率大大提高。

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