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1. 发明申请

US20120032229A1 Silicon Wafer And Production Method Thereof 审中-公开
标题翻译：硅晶片及其制作方法
公开(公告)号：US20120032229A1
公开(公告)日：2012-02-09
申请号：US13191532
申请日：2011-07-27
申请人： Hiroyuki Deai , Seiji Takayama
发明人： Hiroyuki Deai , Seiji Takayama
IPC分类号： H01L29/165 , H01L29/36
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A silicon wafer contains: a silicon substrate; a first epitaxial layer on the silicon wafer, wherein the absolute value of the difference between donor and acceptor concentrations is ≧1×1018 atoms/cm3; a second epitaxial layer above the first epitaxial layer, whose conductivity type is the same as the first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentrations is ≦5×1017 atoms/cm3; wherein, by doping a lattice constant adjusting material into the first epitaxial layer, the variation amount ((a1-aSi)/aSi) of the lattice constant of the first epitaxial layer (a1) relative to the lattice constant of the silicon single crystal (aSi) as well as the variation amount ((a2-aSi)/aSi) of the lattice constant of the second epitaxial layer (a2) relative to the lattice constant of the silicon single crystal (aSi) are controlled to less than the critical lattice mismatch.
摘要翻译：硅晶片包含：硅衬底; 硅晶片上的第一外延层，其中供体和受主浓度之差的绝对值为≥1×1018原子/ cm3; 在第一外延层上方的第二外延层，其导电类型与第一外延层相同，其中供体和受体浓度之差的绝对值为5×1017原子/ cm3; 其中，通过将晶格常数调整材料掺杂到第一外延层中，第一外延层（a1）的晶格常数相对于硅单晶的晶格常数的变化量（（a1-aSi）/ aSi） aSi）以及第二外延层（a2）的晶格常数相对于硅单晶（aSi）的晶格常数的变化量（（a2-aSi）/ aSi）被控制为小于临界晶格不匹配。

2. 发明授权

US08043929B2 Semiconductor substrate and method for production thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US08043929B2
公开(公告)日：2011-10-25
申请号：US12120285
申请日：2008-05-14
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
IPC分类号： H01L21/265
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

3. 发明申请

US20050139961A1 Semiconductor substrate and method for production thereof 审中-公开
标题翻译：半导体基板及其制造方法
公开(公告)号：US20050139961A1
公开(公告)日：2005-06-30
申请号：US11012935
申请日：2004-12-15
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried Ammon
IPC分类号： H01L21/76 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/316 , H01L21/762 , H01L27/12 , H01L29/165 , H01L29/786 , H01L29/06
CPC分类号： H01L21/26533 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/31658 , H01L21/76243 , H01L21/76256
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

4. 发明申请

US20080268613A1 Semiconductor Substrate And Method For Production Thereof 失效
标题翻译：半导体基板及其制造方法
公开(公告)号：US20080268613A1
公开(公告)日：2008-10-30
申请号：US12120285
申请日：2008-05-14
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried von Ammon
IPC分类号： H01L21/265
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

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