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1. 发明授权

US4878995A Method of dry etching and apparatus for use in such method 失效
标题翻译：干法蚀刻方法及其用途
公开(公告)号：US4878995A
公开(公告)日：1989-11-07
申请号：US214368
申请日：1988-07-01
申请人： Tsunetoshi Arikado , Makoto Sekine , Haruo Okano , Yasuhiro Horiike
发明人： Tsunetoshi Arikado , Makoto Sekine , Haruo Okano , Yasuhiro Horiike
IPC分类号： H01L21/311 , H01L21/3213
CPC分类号： H01L21/32137 , H01L21/31116 , H01L21/32136
摘要： This invention provides a method of dry etching and an apparatus for use with such method capable of producing a multi-layered structure having substantially a vertical wall and high selectivity. There is provided a method of the dry etching that disposing an object having a first film and second film thereon in a vacuum chamber, introducing an activated reactive gas, and cooling the object in the temperature or less being deposited a film including at least the first film material on the first film.

2. 发明授权

US4838978A Dry etching apparatus 失效
标题翻译：干蚀刻装置
公开(公告)号：US4838978A
公开(公告)日：1989-06-13
申请号：US123353
申请日：1987-11-20
申请人： Makoto Sekine , Haruo Okano , Tsunetoshi Arikado , Yasuhiro Horiike
发明人： Makoto Sekine , Haruo Okano , Tsunetoshi Arikado , Yasuhiro Horiike
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431
摘要： A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum vessel, and is located between the anode and the cathode. A semiconductor wafer can be placed on the cathode through a tray. The cathode is moved toward the anode together with the tray and the wafer. When the edge portion of the tray abuts against the flange section, the interior of the vacuum vessel is partitioned into an etching chamber and the other chamber. A magnetic field is applied to the etching chamber from outside the vacuum vessel, and an etching gas is also introduced into the etching chamber. When the etching gas is introduced, the interior of the etching chamber is evacuated to be maintained at a predetermined pressure.
摘要翻译：一种干蚀刻装置，其包括位于上侧的阳极和位于真空容器中彼此面对的下侧的阴极。可以在阳极和阴极之间施加高频功率。凸缘部分从真空容器的内壁延伸，并位于阳极和阴极之间。可以通过托盘将半导体晶片放置在阴极上。阴极与托盘和晶片一起向阳极移动。当托盘的边缘部分抵靠凸缘部分时，真空容器的内部被分隔成蚀刻室和另一个室。从真空容器的外部向蚀刻室施加磁场，蚀刻气体也被引入蚀刻室。当蚀刻气体被引入时，蚀刻室的内部被抽真空以保持在预定的压力。

3. 发明授权

US5298112A Method for removing composite attached to material by dry etching 失效
标题翻译：通过干蚀刻除去附着在材料上的复合物的方法
公开(公告)号：US5298112A
公开(公告)日：1994-03-29
申请号：US996864
申请日：1992-12-15
申请人： Nobuo Hayasaka , Tsunetoshi Arikado , Haruo Okano , Keiji Horioka
发明人： Nobuo Hayasaka , Tsunetoshi Arikado , Haruo Okano , Keiji Horioka
IPC分类号： G03F7/42 , H01L21/02 , H01L21/3213 , H01L21/306 , B29C37/00 , B44C1/22 , C23F1/00
CPC分类号： H01L21/02071 , G03F7/427
摘要： A method and apparatus for removing a composite attached to a material to be treated by dry ashing using a gas including a halogen element and a gas including a hydrogen element or using a gas including fluorine, a gas including oxygen and a gas including chlorine in a reaction chamber containing the material therein for use in manufacturing a semiconductor device.
摘要翻译：一种方法和装置，其通过使用包含卤素元素的气体和包含氟元素的气体或使用包含氟的气体，包括氧气和包括氯在内的气体的气体，在干法灰化中附着到待处理材料上反应室含有用于制造半导体器件的材料。

4. 发明授权

US07042790B2 Semiconductor device, sales method for semiconductor device, sales system for semiconductor device and program product storing sales program for semiconductor device 失效
标题翻译：半导体装置，半导体装置的销售方法，半导体装置的销售系统以及半导体装置的节目产品存储销售方案
公开(公告)号：US07042790B2
公开(公告)日：2006-05-09
申请号：US09964759
申请日：2001-09-28
申请人： Tsunetoshi Arikado , Katsuya Okumura , Kazuhide Yoneya , Masaru Koyanagi
发明人： Tsunetoshi Arikado , Katsuya Okumura , Kazuhide Yoneya , Masaru Koyanagi
IPC分类号： G11C8/00
CPC分类号： G06Q30/06
摘要： A semiconductor device includes a plurality of cell arrays, a selection control circuit to generate and to output a selection control signal. An array selection circuit generates internal address signals on the basis of an external address signal and the selection control signal. The array selection circuit outputs the internal address signals to the plurality of cell arrays to select ones of the cell arrays. A sales method for selling semiconductor devices includes presenting function-related information and price-related information on partially good semiconductor devices to client terminals and prompting the client terminals to provide purchase/non-purchase information and determining the possibility of successful transactions on the basis of the purchase/non-purchase information. A sales system for selling semiconductor devices uses the sales method and a sales program product for causing a computer system to sell semiconductor devices using the sales method.
摘要翻译：半导体器件包括多个单元阵列，选择控制电路，用于产生和输出选择控制信号。阵列选择电路根据外部地址信号和选择控制信号产生内部地址信号。阵列选择电路将内部地址信号输出到多个单元阵列以选择单元阵列中的一个。销售半导体器件的销售方法包括向客户终端提供部分良好的半导体器件的功能相关信息和价格相关信息，并促使客户终端提供购买/非购买信息，并基于以下方式确定成功交易的可能性：购买/非购买信息。用于销售半导体器件的销售系统使用销售方法和销售程序产品来使计算机系统使用销售方法销售半导体器件。

5. 发明授权

US06865513B2 Method for predicting life of rotary machine and determining repair timing of rotary machine 失效
标题翻译：预测旋转机寿命的方法，确定旋转机的修理时间
公开(公告)号：US06865513B2
公开(公告)日：2005-03-08
申请号：US10101720
申请日：2002-03-21
申请人： Yukihiro Ushiku , Tsunetoshi Arikado , Shuichi Samata , Takashi Nakao , Yuuichi Mikata
发明人： Yukihiro Ushiku , Tsunetoshi Arikado , Shuichi Samata , Takashi Nakao , Yuuichi Mikata
IPC分类号： F04D27/00 , F04B37/16 , F04B49/06 , F04B49/10 , F04B51/00 , G01M13/00 , H01L21/00 , G06F11/30
CPC分类号： F04B51/00 , F04B49/065 , F04D19/04 , F04D27/001 , G01M13/00
摘要： An apparatus for predicting life expectancy of a rotary machine includes: a load recipe input module acquiring loading conditions of a rotary machine; a characterizing feature input module obtaining characterizing feature data of a rotary machine; and a life expectancy prediction module calculating life expectancy of the rotary machine in conformity with the loading conditions and the characterizing feature datap.
摘要翻译：一种用于预测旋转机器的预期寿命的装置包括：负载配方输入模块，其获取旋转机器的负载条件; 特征特征输入模块获得旋转机器的特征特征数据; 以及根据加载条件和特征特征数据表计算旋转机器的预期寿命的预期寿命预测模块。

6. 发明授权

US06483083B2 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06483083B2
公开(公告)日：2002-11-19
申请号：US09877147
申请日：2001-06-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27D1100
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切入进入辐射温度计的杂散光（噪声光）。

7. 发明授权

US06351006B1 Ferroelectric capacitor with means to prevent deterioration 失效
标题翻译：铁电电容器具有防止劣化的手段
公开(公告)号：US06351006B1
公开(公告)日：2002-02-26
申请号：US09436635
申请日：1999-11-09
申请人： Koji Yamakawa , Osamu Arisumi , Katsuhiko Hieda , Tsunetoshi Arikado , Hideyuki Kanai
发明人： Koji Yamakawa , Osamu Arisumi , Katsuhiko Hieda , Tsunetoshi Arikado , Hideyuki Kanai
IPC分类号： H01C2994
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/60
摘要： A semiconductor device comprises a semiconductor substrate and a capacitor provided above the semiconductor substrate and having an upper electrode, a lower electrode, and a dielectric film provided between the upper electrode and the lower electrode. At least one of the electrodes comprises an SrRuO3 film provided near the dielectric film and a conductive film made of conductive material other than SrRuO3 and provided far from the dielectric film.
摘要翻译：半导体器件包括设置在半导体衬底上方的半导体衬底和电容器，并具有设置在上电极和下电极之间的上电极，下电极和电介质膜。电极中的至少一个包括设置在电介质膜附近的SrRuO 3膜和由SrRuO 3以外的导电材料制成并且远离电介质膜设置的导电膜。

8. 发明授权

US4473437A Dry etching method for organic material layers 失效
标题翻译：有机材料层的干蚀刻方法
公开(公告)号：US4473437A
公开(公告)日：1984-09-25
申请号：US552254
申请日：1983-11-16
申请人： Iwao Higashikawa , Tsunetoshi Arikado
发明人： Iwao Higashikawa , Tsunetoshi Arikado
IPC分类号： C08J7/00 , H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22 , B29C17/08 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31138 , H01L21/302 , Y10S438/95
摘要： A dry etching method for organic material layers is disclosed which utilizes a parallel plate electrode type plasma etching apparatus. An etching gas containing nitrogen as its primary constituent is introduced into the apparatus, and then the organic material layers are anisotropically etched by applying a high frequency electric power to the electrodes to produce a plasma.
摘要翻译：公开了一种利用平行平板电极型等离子体蚀刻装置的有机材料层的干蚀刻方法。将含有氮作为其主要成分的蚀刻气体引入到装置中，然后通过向电极施加高频电力来产生等离子体，各向异性蚀刻有机材料层。

9. 发明授权

US07772671B2 Semiconductor device having an element isolating insulating film 有权
标题翻译：具有元件隔离绝缘膜的半导体器件
公开(公告)号：US07772671B2
公开(公告)日：2010-08-10
申请号：US12068635
申请日：2008-02-08
申请人： Kyoichi Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
发明人： Kyoichi Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
IPC分类号： H01L29/00
CPC分类号： H01L21/28194 , H01L21/28088 , H01L21/28167 , H01L21/28185 , H01L21/28202 , H01L21/76262 , H01L21/823481 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66537 , H01L29/66545
摘要： A semiconductor device including a semiconductor substrate having on its surface a recess and at least one projection formed in the recess. The projection has a channel region and an element isolating insulating film is formed in the recess. A MIS type semiconductor element is formed on the semiconductor substrate and includes a gate electrode formed on the channel region of the projection via a gate insulating film. Source and drain regions are formed to pinch the channel region of the projection therebetween. A channel region of the MIS type semiconductor element is formed to reach the at least one projection located adjacent to the MIS type semiconductor element in its channel width direction via the recess. A top surface of the at least one projection is located higher than the top surface of the element isolating insulating film by 20 nm or more.
摘要翻译：一种半导体器件，包括在其表面上具有凹部的半导体衬底和形成在凹部中的至少一个突起。突起具有沟道区域，并且在凹部中形成元件隔离绝缘膜。 MIS半导体元件形成在半导体衬底上，并且包括通过栅极绝缘膜形成在突起的沟道区上的栅电极。形成源区和漏区以夹住其间的突起的沟道区。 MIS型半导体元件的沟道区域形成为经由凹部在其沟道宽度方向上到达位于与MIS型半导体元件相邻的至少一个突起。所述至少一个突起的顶表面比所述元件隔离绝缘膜的顶表面高20nm或更大。

10. 发明授权

US07268047B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07268047B2
公开(公告)日：2007-09-11
申请号：US11357072
申请日：2006-02-21
申请人： Tsunetoshi Arikado , Takaaki Kawahara , Kazuyoshi Torii , Hiroshi Kitajima , Seiichi Miyazaki
发明人： Tsunetoshi Arikado , Takaaki Kawahara , Kazuyoshi Torii , Hiroshi Kitajima , Seiichi Miyazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
摘要翻译：硅衬底上的栅极绝缘膜包括SiO 2膜和高k膜。高k膜含有过渡金属，铝，硅和氧。高k膜中的硅的浓度高于与SiO 2膜的界面附近的过渡金属和铝的浓度以及与栅电极的界面附近的浓度。此外，优选至少在与SiO 2膜的界面附近或与栅电极的界面附近的硅中的浓度最高，随着距离逐渐减小从这些界面，并成为高k电影中心部分中最低的。

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