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1. 发明授权

US06483083B2 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06483083B2
公开(公告)日：2002-11-19
申请号：US09877147
申请日：2001-06-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27D1100
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切入进入辐射温度计的杂散光（噪声光）。

2. 发明授权

US06265696B1 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06265696B1
公开(公告)日：2001-07-24
申请号：US09371845
申请日：1999-08-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27B514
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切割进入辐射温度计的杂散光（噪声光）。

3. 发明授权

US6015990A Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US6015990A
公开(公告)日：2000-01-18
申请号：US30809
申请日：1998-02-26
申请人： Katsuhiko Hieda , Tsunetoshi Arikado , Katsuya Okumura
发明人： Katsuhiko Hieda , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： H01L21/8247 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/84 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/94
CPC分类号： H01L27/10858 , H01L21/84 , H01L27/10808 , H01L27/1082 , H01L27/10823 , H01L27/10876
摘要： A semiconductor memory device comprises a matrix of memory cells, each having a transistor and a capacitor. A first electrode, a dielectric film and a second electrode are sequentially staked on a silicon monocrystalline substrate and epitaxially grown to form a capacitor having a multilayer structure. Then, an SOI layer is formed on the monocrystalline substrate carrying thereon the capacitor with an insulator film interposed therebetween. A source/drain diffusion layer is formed in the SOI layer and a gate electrode is formed to produce a MOS transistor. Either the source or the drain of the source/drain diffusion layer of the transistor is connected to the second electrode by way of the polysilicon layer in the contact hole running through the SOI layer and the insulator film layer.
摘要翻译：半导体存储器件包括存储器单元的矩阵，每个存储单元具有晶体管和电容器。将第一电极，电介质膜和第二电极依次压片在硅单晶衬底上并进行外延生长以形成具有多层结构的电容器。然后，在承载有电容器的单晶衬底上形成SOI层，其间插入有绝缘体膜。源极/漏极扩散层形成在SOI层中，形成栅电极以产生MOS晶体管。晶体管的源极/漏极扩散层的源极或漏极通过穿过SOI层和绝缘膜层的接触孔中的多晶硅层连接到第二电极。

4. 发明授权

US07042790B2 Semiconductor device, sales method for semiconductor device, sales system for semiconductor device and program product storing sales program for semiconductor device 失效
标题翻译：半导体装置，半导体装置的销售方法，半导体装置的销售系统以及半导体装置的节目产品存储销售方案
公开(公告)号：US07042790B2
公开(公告)日：2006-05-09
申请号：US09964759
申请日：2001-09-28
申请人： Tsunetoshi Arikado , Katsuya Okumura , Kazuhide Yoneya , Masaru Koyanagi
发明人： Tsunetoshi Arikado , Katsuya Okumura , Kazuhide Yoneya , Masaru Koyanagi
IPC分类号： G11C8/00
CPC分类号： G06Q30/06
摘要： A semiconductor device includes a plurality of cell arrays, a selection control circuit to generate and to output a selection control signal. An array selection circuit generates internal address signals on the basis of an external address signal and the selection control signal. The array selection circuit outputs the internal address signals to the plurality of cell arrays to select ones of the cell arrays. A sales method for selling semiconductor devices includes presenting function-related information and price-related information on partially good semiconductor devices to client terminals and prompting the client terminals to provide purchase/non-purchase information and determining the possibility of successful transactions on the basis of the purchase/non-purchase information. A sales system for selling semiconductor devices uses the sales method and a sales program product for causing a computer system to sell semiconductor devices using the sales method.
摘要翻译：半导体器件包括多个单元阵列，选择控制电路，用于产生和输出选择控制信号。阵列选择电路根据外部地址信号和选择控制信号产生内部地址信号。阵列选择电路将内部地址信号输出到多个单元阵列以选择单元阵列中的一个。销售半导体器件的销售方法包括向客户终端提供部分良好的半导体器件的功能相关信息和价格相关信息，并促使客户终端提供购买/非购买信息，并基于以下方式确定成功交易的可能性：购买/非购买信息。用于销售半导体器件的销售系统使用销售方法和销售程序产品来使计算机系统使用销售方法销售半导体器件。

5. 发明授权

US07700381B2 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效
标题翻译：具有ID标记的半导体晶圆，其半导体器件的制造方法和制造方法
公开(公告)号：US07700381B2
公开(公告)日：2010-04-20
申请号：US11350027
申请日：2006-02-09
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.
摘要翻译：半导体晶片具有沿其周边形成的斜面轮廓，形成在晶片上的产品和形成在斜面轮廓上的ID标记。 ID标记至少显示产品的性能，制造条件和测试结果。

6. 发明申请

US20060131696A1 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效
公开(公告)号：US20060131696A1
公开(公告)日：2006-06-22
申请号：US11350027
申请日：2006-02-09
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
IPC分类号： H01L29/06 , H01L23/02
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

7. 发明授权

US07057259B2 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效
公开(公告)号：US07057259B2
公开(公告)日：2006-06-06
申请号：US10101337
申请日：2002-03-20
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
IPC分类号： H01L29/06
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

8. 发明授权

US07604832B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US07604832B2
公开(公告)日：2009-10-20
申请号：US10927155
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D1/02 , B05D3/12
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口和基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qgamma（mm）的范围内相对于溶液的表面张力γ（N / m），通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10 -5（m·sec / N）。

9. 发明授权

US06301435B1 Heating method 失效
标题翻译：加热方式
公开(公告)号：US06301435B1
公开(公告)日：2001-10-09
申请号：US09573227
申请日：2000-05-19
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： F26B1900
CPC分类号： F26B3/28
摘要： A heating method for heating an object by making use of a heating apparatus comprising lamps and light transmissive columnar bodies each being positioned in front of and in the light irradiating direction of each of the lamps and having a fore-end constituting a light-receiving face for taking up an irradiated light from the lamp and a rear-end constituting a light-irradiating face for irradiating light; the object being disposed to face the light-irradiating faces of the light transmissive columnar bodies and heated by the irradiation of light transmitted via the light transmissive columnar bodies from the lamps. A distance between the light-irradiating faces of the light transmissive columnar bodies and the object is set to around 0.3L or not less than 0.8L (herein, L is a width of the light-irradiating face).
摘要翻译：一种利用包括灯和透光柱状体的加热装置加热物体的加热方法，每个灯都位于每个灯的前面和光线照射方向上，并且具有构成光接收面的前端用于摄取来自灯的照射光和构成用于照射光的光照射面的后端; 物体被设置为面对透光柱状体的光照射面，并且通过从灯透过的透光柱状体的光的照射被加热。透光性柱状体的光照射面与物体之间的距离设定为0.3L以下且0.8L以上（此处，L为照射面的宽度）。

10. 发明授权

US6072162A Device and method for heating substrate, and method for treating substrate 失效
标题翻译：基板加热装置及方法，基板处理方法
公开(公告)号：US6072162A
公开(公告)日：2000-06-06
申请号：US352323
申请日：1999-07-12
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： G03F7/16 , H01L21/00 , H01L21/027 , H05B3/26 , H05B3/68 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67103 , H05B3/262 , H05B3/68 , H05B2203/022
摘要： A device for heating a substrate comprises a heating plate for heating a to-be-treated substrate, substrate holding section for holding the to-be-treated substrate on the heating plate, a gas stream producing section for producing a gas stream in a space above the heating plate in one direction along a surface of the heating plate, and a heater provided at the heating plate, and having pattern symmetrical with respect to a gas stream flowing through the center of the heating plate, wherein the heater comprises a first heater constituting section having heater elements arranged in the form of a ring, and a second heater constituting section located inside the first heater constituting section and having heater elements which are arranged so that more heat is generated in an upstream side of the gas stream than in a downstream side thereof.
摘要翻译：用于加热基板的装置包括用于加热被处理基板的加热板，用于将待处理基板保持在加热板上的基板保持部分，用于在空间中产生气流的气流产生部分在加热板的一个方向上方，以及设置在加热板上的加热器，并且具有相对于流过加热板的中心的气流对称的图案，其中加热器包括第一加热器具有以环形形式设置的加热器元件的构成部分和位于第一加热器构成部分内部的第二加热器构成部分，并且具有加热器元件，其布置成在气流的上游侧产生比在下游侧。

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