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1. 发明授权

US07471549B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07471549B2
公开(公告)日：2008-12-30
申请号：US11390254
申请日：2006-03-28
申请人： Tsuneo Inaba , Kenji Tsuchida , Yoshiaki Fukuzumi
发明人： Tsuneo Inaba , Kenji Tsuchida , Yoshiaki Fukuzumi
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A semiconductor memory device includes a write line, at least three first data-writing circuits which are connected to the write line, and memory cells which include a magnetoresistive element, are connected electrically and/or magnetically to the write line, and are arranged between the first data-writing circuits.
摘要翻译：半导体存储器件包括写入线，连接到写入线的至少三个第一数据写入电路和包括磁阻元件的存储器单元电和/或磁性地连接到写入线，并且被布置在第一个数据写入电路。

2. 发明申请

US20070058424A1 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US20070058424A1
公开(公告)日：2007-03-15
申请号：US11390254
申请日：2006-03-28
申请人： Tsuneo Inaba , Kenji Tsuchida , Yoshiaki Fukuzumi
发明人： Tsuneo Inaba , Kenji Tsuchida , Yoshiaki Fukuzumi
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A semiconductor memory device includes a write line, at least three first data-writing circuits which are connected to the write line, and memory cells which include a magnetoresistive element, are connected electrically and/or magnetically to the write line, and are arranged between the first data-writing circuits.
摘要翻译：半导体存储器件包括写入线，连接到写入线的至少三个第一数据写入电路和包括磁阻元件的存储器单元电和/或磁性地连接到写入线，并且被布置在第一个数据写入电路。

3. 发明授权

US08120948B2 Data writing method for magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器的数据写入方法
公开(公告)号：US08120948B2
公开(公告)日：2012-02-21
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

4. 发明申请

US20100073998A1 DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆的数据写入方法
公开(公告)号：US20100073998A1
公开(公告)日：2010-03-25
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

5. 发明授权

US06650590B2 Semiconductor memory device with reduced its chip area and power consumption 有权
公开(公告)号：US06650590B2
公开(公告)日：2003-11-18
申请号：US10103141
申请日：2002-03-22
申请人： Tsuneo Inaba , Fumihiro Kohno , Kenji Tsuchida , Toshimi Ikeda
发明人： Tsuneo Inaba , Fumihiro Kohno , Kenji Tsuchida , Toshimi Ikeda
IPC分类号： G11C700
CPC分类号： G11C8/08 , G11C8/14
摘要： One (first level shift circuit) of first and second level shift circuits is provided in a local word-drive-line driving circuit located near memory cell arrays. The second level shift circuit is provided in a global word-drive-line driving circuit located remote from the memory cell arrays.

6. 发明授权

US6002636A Semiconductor memory drive capable of canceling power supply noise 有权
标题翻译：能够消除电源噪声的半导体存储器件
公开(公告)号：US6002636A
公开(公告)日：1999-12-14
申请号：US199463
申请日：1998-11-25
申请人： Kenji Tsuchida , Shinichiro Shiratake , Tsuneo Inaba
发明人： Kenji Tsuchida , Shinichiro Shiratake , Tsuneo Inaba
IPC分类号： G11C11/41 , G11C5/02 , G11C8/08 , G11C11/401 , G11C11/407 , G11C11/408 , H01L21/8242 , H01L27/108 , G11C8/00
CPC分类号： G11C5/025 , G11C11/4085 , G11C8/08
摘要： This invention discloses the layout of word line driving circuits for driving word lines. A semiconductor memory device includes a memory cell array having a bit line, n memory cells connected to the bit line, and n word lines respectively connected to the n memory cells. The semiconductor memory device further includes n/2 first word line driving circuits for driving n/2 word lines of the n word lines, and n/2 second word line driving circuits for driving the remaining n/2 word lines of the n word lines. The second word line driving circuits are arranged at the positions where the second word line driving circuits face the first word line driving circuits via the memory cell array.
摘要翻译：本发明公开了用于驱动字线的字线驱动电路的布局。一种半导体存储器件包括具有位线的存储单元阵列，+ E，连接到位线的uns n + EE存储器单元，以及分别连接到+ E，uns n + EE的+ E，uns n + EE字线记忆细胞半导体存储器件还包括用于驱动+ E，n n + EE字线的n / 2个字线的n / 2个第一字线驱动电路和用于驱动剩余n / 2个字的n / 2个第二字线驱动电路行+ E，uns n + EE字线。第二字线驱动电路被布置在第二字线驱动电路经由存储单元阵列面对第一字线驱动电路的位置。

7. 发明授权

US5703817A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5703817A
公开(公告)日：1997-12-30
申请号：US748779
申请日：1996-11-14
申请人： Shinichiro Shiratake , Daisaburo Takashima , Kenji Tsuchida , Tsuneo Inaba
发明人： Shinichiro Shiratake , Daisaburo Takashima , Kenji Tsuchida , Tsuneo Inaba
IPC分类号： H01L21/82 , G11C11/401 , G11C17/00 , G11C29/00 , G11C29/04 , G11C29/44 , H01L21/8242 , H01L27/10 , H01L27/108 , G11C7/00
CPC分类号： G11C29/785 , G11C29/44 , G11C29/804 , G11C29/808
摘要： A plurality of memory cells are arranged at crosspoints between a plurality of word lines and a plurality of bit lines. The memory cells include not only normal cells but also spare cells for saving defects. The saving of the defect is effected by replacing the word line or bit line connected to the normal cell with the word line or bit line connected to the spare cell. The replacement is effected by a corresponding pair of fuse circuit and deciding circuit, that is, the fuse circuit for storing the address of a word line or bit line to be replaced and the deciding circuit for, based on the address, deciding whether or not an accessed word line or bit line be replaced. As such a pair use is made of a plurality of pairs and a plurality of kinds are provided as the word lines or bit lines for replacement and can be used in accordance with the size of defects. It is, therefore, possible to effectively save the defective word line or bit line, while avoiding any uneffective replacement.
摘要翻译：多个存储单元被布置在多个字线和多个位线之间的交叉点处。存储单元不仅包括正常单元格，还包括用于保存缺陷的备用单元。通过用连接到备用单元的字线或位线替换连接到正常单元的字线或位线来实现缺陷的保存。该替换由对应的熔丝电路和判定电路对，即用于存储要替换的字线或位线的地址的熔丝电路和基于该地址的判定电路来决定是否访问的字线或位线被替换。这样一对使用由多对构成，并且提供多种类型作为用于替换的字线或位线，并且可以根据缺陷的尺寸使用。因此，可以有效地保存有缺陷的字线或位线，同时避免任何不必要的更换。

8. 发明授权

US07269060B2 Magnetic random access memory 有权
公开(公告)号：US07269060B2
公开(公告)日：2007-09-11
申请号：US11298597
申请日：2005-12-12
申请人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic random access memory includes first write lines separated from one another and extending along a first direction. Second write lines extend in a direction different from the first direction. The MTJ elements are provided between the first write lines and the second write lines. Connection lines connect the first write lines. Sinkers are connected to ends of the first write lines and to the first write lines at between the connection lines and extract currents from the first write lines. Drivers are connected to ends of the first write lines and supply currents to the first write lines.

9. 发明申请

US20070206406A1 SPIN INJECTION WRITE TYPE MAGNETIC MEMORY DEVICE 有权
标题翻译：旋转注射式磁性记忆装置
公开(公告)号：US20070206406A1
公开(公告)日：2007-09-06
申请号：US11673241
申请日：2007-02-09
申请人： Yoshihiro Ueda , Kenji Tsuchida , Tsuneo Inaba , Kiyotaro Itagaki
发明人： Yoshihiro Ueda , Kenji Tsuchida , Tsuneo Inaba , Kiyotaro Itagaki
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A spin injection write type magnetic memory device includes memory cells which have a magnetoresistance effect element and a select transistor. The magnetoresistance effect element has one end connected to a first node. The select transistor has a first diffusion area connected to another end of the magnetoresistance effect element and a second diffusion area connected to a second node. A select line extends along a first direction and is connected to a gate electrode of the select transistor. A first interconnect extends along a second direction and is connected to the first node. A second interconnect extends along the second direction and is connected to the second node. Two of the memory cells adjacent along the first direction share the first node. Two of the memory cells adjacent along the second direction share the second node.
摘要翻译：自旋注入写入型磁存储器件包括具有磁阻效应元件和选择晶体管的存储单元。磁阻效应元件的一端连接到第一节点。选择晶体管具有连接到磁阻效应元件的另一端的第一扩散区域和连接到第二节点的第二扩散区域。选择线沿着第一方向延伸并连接到选择晶体管的栅电极。第一互连沿着第二方向延伸并连接到第一节点。第二互连沿着第二方向延伸并且连接到第二节点。沿着第一方向相邻的两个存储单元共享第一节点。沿着第二方向相邻的两个存储单元共享第二节点。

10. 发明申请

US20070030726A1 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20070030726A1
公开(公告)日：2007-02-08
申请号：US11298597
申请日：2005-12-12
申请人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： A magnetic random access memory includes first write lines separated from one another and extending along a first direction. Second write lines extend in a direction different from the first direction. The MTJ elements are provided between the first write lines and the second write lines. Connection lines connect the first write lines. Sinkers are connected to ends of the first write lines and to the first write lines at between the connection lines and extract currents from the first write lines. Drivers are connected to ends of the first write lines and supply currents to the first write lines.
摘要翻译：磁性随机存取存储器包括彼此分离并沿着第一方向延伸的第一写入线。第二写入线沿与第一方向不同的方向延伸。 MTJ元件设置在第一写入线和第二写入线之间。连接线连接第一条写入线。下沉器连接到第一写入线的端部和连接线之间的第一写入线，并从第一写入线提取电流。驱动器连接到第一写入线的端部并且将电流提供给第一写入线。

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