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1. 发明授权

US08120948B2 Data writing method for magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器的数据写入方法
公开(公告)号：US08120948B2
公开(公告)日：2012-02-21
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

2. 发明申请

US20100073998A1 DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆的数据写入方法
公开(公告)号：US20100073998A1
公开(公告)日：2010-03-25
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

3. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

4. 发明授权

US08530987B2 Magnetic memory including a magnetoresistive element 有权
标题翻译：磁存储器包括磁阻元件
公开(公告)号：US08530987B2
公开(公告)日：2013-09-10
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

5. 发明申请

US20120241884A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20120241884A1
公开(公告)日：2012-09-27
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori AIKAWA , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori AIKAWA , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：根据一个实施例，磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

6. 发明授权

US08347175B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08347175B2
公开(公告)日：2013-01-01
申请号：US12886917
申请日：2010-09-21
申请人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
发明人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
IPC分类号： H03M13/00
CPC分类号： G11C11/1695 , G11C11/1675 , G11C11/1677 , H03M13/15 , H03M13/1515 , H03M13/19
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive effect element including a first magnetic layer invariable in magnetization direction, a second magnetic layer variable in magnetization direction, and an intermediate layer between the first magnetic layer and the second magnetic layer, an error detecting and correcting circuit which detects whether first data in the magnetoresistive effect element includes any error and which outputs error-corrected second data when the first data includes an error, a writing circuit which generates one of the first write current including a first pulse width and the second write current including a second pulse width greater than the first pulse width, and a control circuit which controls the writing circuit to pass the second write current through the magnetoresistive effect element when the second data is written into the magnetoresistive effect element.
摘要翻译：根据一个实施例，磁存储器包括磁阻效应元件，其包括在磁化方向上不变的第一磁性层，在磁化方向上可变的第二磁性层，以及第一磁性层和第二磁性层之间的中间层，错误检测以及校正电路，其检测所述磁阻效应元件中的第一数据是否包含任何误差，并且当所述第一数据包括误差时，输出经纠错的第二数据;写入电路，其产生包括第一脉冲宽度的第一写入电流和第二写入电流，包括大于第一脉冲宽度的第二脉冲宽度;以及控制电路，当第二数据被写入磁阻效应元件时，控制电路使第二写入电流通过磁阻效应元件。

7. 发明申请

US20110078538A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20110078538A1
公开(公告)日：2011-03-31
申请号：US12886917
申请日：2010-09-21
申请人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
发明人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
IPC分类号： H03M13/29 , G06F11/10
CPC分类号： G11C11/1695 , G11C11/1675 , G11C11/1677 , H03M13/15 , H03M13/1515 , H03M13/19
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive effect element including a first magnetic layer invariable in magnetization direction, a second magnetic layer variable in magnetization direction, and an intermediate layer between the first magnetic layer and the second magnetic layer, an error detecting and correcting circuit which detects whether first data in the magnetoresistive effect element includes any error and which outputs error-corrected second data when the first data includes an error, a writing circuit which generates one of the first write current including a first pulse width and the second write current including a second pulse width greater than the first pulse width, and a control circuit which controls the writing circuit to pass the second write current through the magnetoresistive effect element when the second data is written into the magnetoresistive effect element.
摘要翻译：根据一个实施例，磁存储器包括磁阻效应元件，其包括在磁化方向上不变的第一磁性层，在磁化方向上可变的第二磁性层，以及第一磁性层和第二磁性层之间的中间层，错误检测以及校正电路，其检测所述磁阻效应元件中的第一数据是否包含任何误差，并且当所述第一数据包括误差时，输出经纠错的第二数据;写入电路，其产生包括第一脉冲宽度的第一写入电流和第二写入电流，包括大于第一脉冲宽度的第二脉冲宽度;以及控制电路，当第二数据被写入磁阻效应元件时，控制电路使第二写入电流通过磁阻效应元件。

8. 发明授权

US08878321B2 Magnetoresistive element and producing method thereof 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08878321B2
公开(公告)日：2014-11-04
申请号：US13618410
申请日：2012-09-14
申请人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
发明人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82 , H01L21/8246 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
摘要翻译：根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。界面层的透过率比体层高，平面尺寸比体层大。

9. 发明授权

US08378437B2 Magnetoresistive effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08378437B2
公开(公告)日：2013-02-19
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

10. 发明申请

US20130099337A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20130099337A1
公开(公告)日：2013-04-25
申请号：US13604386
申请日：2012-09-05
申请人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
发明人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.
摘要翻译：根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。调整层被配置为减少来自参考层的泄漏磁场。调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。界面层的饱和磁化强度大于磁性层的饱和磁化强度。

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