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1. 发明授权

US08120948B2 Data writing method for magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器的数据写入方法
公开(公告)号：US08120948B2
公开(公告)日：2012-02-21
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

2. 发明申请

US20100073998A1 DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆的数据写入方法
公开(公告)号：US20100073998A1
公开(公告)日：2010-03-25
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko NAKAYAMA , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

3. 发明授权

US08347175B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08347175B2
公开(公告)日：2013-01-01
申请号：US12886917
申请日：2010-09-21
申请人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
发明人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
IPC分类号： H03M13/00
CPC分类号： G11C11/1695 , G11C11/1675 , G11C11/1677 , H03M13/15 , H03M13/1515 , H03M13/19
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive effect element including a first magnetic layer invariable in magnetization direction, a second magnetic layer variable in magnetization direction, and an intermediate layer between the first magnetic layer and the second magnetic layer, an error detecting and correcting circuit which detects whether first data in the magnetoresistive effect element includes any error and which outputs error-corrected second data when the first data includes an error, a writing circuit which generates one of the first write current including a first pulse width and the second write current including a second pulse width greater than the first pulse width, and a control circuit which controls the writing circuit to pass the second write current through the magnetoresistive effect element when the second data is written into the magnetoresistive effect element.
摘要翻译：根据一个实施例，磁存储器包括磁阻效应元件，其包括在磁化方向上不变的第一磁性层，在磁化方向上可变的第二磁性层，以及第一磁性层和第二磁性层之间的中间层，错误检测以及校正电路，其检测所述磁阻效应元件中的第一数据是否包含任何误差，并且当所述第一数据包括误差时，输出经纠错的第二数据;写入电路，其产生包括第一脉冲宽度的第一写入电流和第二写入电流，包括大于第一脉冲宽度的第二脉冲宽度;以及控制电路，当第二数据被写入磁阻效应元件时，控制电路使第二写入电流通过磁阻效应元件。

4. 发明申请

US20110078538A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20110078538A1
公开(公告)日：2011-03-31
申请号：US12886917
申请日：2010-09-21
申请人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
发明人： Sumio Ikegawa , Naoharu Shimomura , Kenji Tsuchida , Hiroaki Yoda
IPC分类号： H03M13/29 , G06F11/10
CPC分类号： G11C11/1695 , G11C11/1675 , G11C11/1677 , H03M13/15 , H03M13/1515 , H03M13/19
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive effect element including a first magnetic layer invariable in magnetization direction, a second magnetic layer variable in magnetization direction, and an intermediate layer between the first magnetic layer and the second magnetic layer, an error detecting and correcting circuit which detects whether first data in the magnetoresistive effect element includes any error and which outputs error-corrected second data when the first data includes an error, a writing circuit which generates one of the first write current including a first pulse width and the second write current including a second pulse width greater than the first pulse width, and a control circuit which controls the writing circuit to pass the second write current through the magnetoresistive effect element when the second data is written into the magnetoresistive effect element.
摘要翻译：根据一个实施例，磁存储器包括磁阻效应元件，其包括在磁化方向上不变的第一磁性层，在磁化方向上可变的第二磁性层，以及第一磁性层和第二磁性层之间的中间层，错误检测以及校正电路，其检测所述磁阻效应元件中的第一数据是否包含任何误差，并且当所述第一数据包括误差时，输出经纠错的第二数据;写入电路，其产生包括第一脉冲宽度的第一写入电流和第二写入电流，包括大于第一脉冲宽度的第二脉冲宽度;以及控制电路，当第二数据被写入磁阻效应元件时，控制电路使第二写入电流通过磁阻效应元件。

5. 发明申请

US20050195644A1 Magnetoresistive random access memory and driving method thereof 有权
标题翻译：磁阻随机存取存储器及其驱动方法
公开(公告)号：US20050195644A1
公开(公告)日：2005-09-08
申请号：US11067670
申请日：2005-03-01
申请人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
发明人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
IPC分类号： G11C11/15 , G11C11/00
CPC分类号： G11C11/16
摘要： The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.
摘要翻译：可以减少读取错误的数量，并且可以产生大的读取信号。提出一种驱动包含存储单元的磁阻随机存取存储器的方法，该存储单元的状态是使用单种写入脉冲在二进制电阻值之间切换的，该方法包括：选择存储单元; 读取所选存储单元的二进制电阻值之一的电阻值，读取的电阻值被定义为第一电阻值; 使用所述写入脉冲对所选择的存储单元执行第一写入操作，以将所选存储单元的电阻值改变为所述二进制电阻值中的另一个; 读取被定义为第二电阻值的二进制电阻值中的另一个; 将所述第二电阻值与所述第一电阻值进行比较，并且基于所述比较结果确定原始存储在所选存储单元中的数据; 以及使用所述写入脉冲对所选择的存储单元执行第二写入操作，以将所选存储单元的第二电阻值改变为所述第一电阻值。

6. 发明授权

US07203088B2 Magnetoresistive random access memory and driving method thereof 有权
标题翻译：磁阻随机存取存储器及其驱动方法
公开(公告)号：US07203088B2
公开(公告)日：2007-04-10
申请号：US11067670
申请日：2005-03-01
申请人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
发明人： Sumio Ikegawa , Yoshihisa Iwata , Kenji Tsuchida
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.
摘要翻译：可以减少读取错误的数量，并且可以产生大的读取信号。提出一种驱动包含存储单元的磁阻随机存取存储器的方法，该存储单元的状态是使用单种写入脉冲在二进制电阻值之间切换的，该方法包括：选择存储单元; 读取所选存储单元的二进制电阻值之一的电阻值，读取的电阻值被定义为第一电阻值; 使用所述写入脉冲对所选择的存储单元执行第一写入操作，以将所选择的存储单元的电阻值改变为所述二进制电阻值中的另一个; 读取被定义为第二电阻值的二进制电阻值中的另一个; 将所述第二电阻值与所述第一电阻值进行比较，并且基于所述比较结果确定原始存储在所选存储单元中的数据; 以及使用所述写入脉冲对所选择的存储单元执行第二写入操作，以将所选存储单元的第二电阻值改变为所述第一电阻值。

7. 发明申请

US20050180204A1 Magnetic memory device and method of reading information 有权
标题翻译：磁记忆装置及读取信息的方法
公开(公告)号：US20050180204A1
公开(公告)日：2005-08-18
申请号：US10855497
申请日：2004-05-28
申请人： Ryousuke Takizawa , Kenji Tsuchida , Yoshihisa Iwata , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Yoshihisa Iwata , Tsuneo Inaba
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14
摘要： A memory cell of a magnetic memory device has an MTJ element and one end of the memory cell is selectively electrically connected to a ground potential line. A first bit line is electrically connected to the other end of the memory cell. A sense amplifier amplifies a difference in potential between the first bit line and a second bit line complementary to the first bit line so that the difference is equal to or larger than a difference between an internal power potential and a ground potential. A connection circuit disconnects the MTJ element from an electric connection between the ground potential line and the sense amplifier.
摘要翻译：磁存储器件的存储单元具有MTJ元件，并且存储单元的一端选择性地电连接到地电位线。第一位线电连接到存储器单元的另一端。读出放大器放大与第一位线互补的第一位线和第二位线之间的电位差，使得差值等于或大于内部功率电位和接地电位之间的差。连接电路将MTJ元件与地电位线和读出放大器之间的电气连接断开。

8. 发明授权

US06661734B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US06661734B2
公开(公告)日：2003-12-09
申请号：US10193223
申请日：2002-07-12
申请人： Tsuneo Inaba , Kenji Tsuchida
发明人： Tsuneo Inaba , Kenji Tsuchida
IPC分类号： G11C800
CPC分类号： G11C8/08
摘要： A semiconductor memory device is disclosed, in which a first word drive line control circuit which supplies a word drive voltage corresponding to the decode output of the decoding circuit to the first word drive line, and has a first reset circuit which resets the first word drive line to a first potential when a first control signal is activated and a second reset circuit which resets the first word drive line to a second potential when a second control signal is activated, and a two-stage reset control circuit which controls changeover from the activated state of the first control signal to the activated state of the second control signal on the basis of the potential of the first word drive line to change the potential of the first word drive line in two stages.
摘要翻译：公开了一种半导体存储器件，其中第一字驱动线控制电路将对应于解码电路的解码输出的字驱动电压提供给第一字驱动线，并且具有复位第一字驱动器的第一复位电路当第一控制信号被激活时，将第一电位线切换到第一电位;以及第二复位电路，其在第二控制信号被激活时将第一字驱动线复位到第二电位;以及两级复位控制电路，其控制从激活的第二控制信号的转换基于第一字驱动线的电位将第一控制信号的状态转换为第二控制信号的激活状态，以改变第一字驱动线的电位两级。

9. 发明授权

US06452860B2 Semiconductor memory device having segment type word line structure 有权
标题翻译：具有段型字线结构的半导体存储器件
公开(公告)号：US06452860B2
公开(公告)日：2002-09-17
申请号：US09871646
申请日：2001-06-04
申请人： Masaharu Wada , Kenji Tsuchida , Tsuneo Inaba , Atsushi Takeuchi , Toshimi Ikeda , Kuninori Kawabata
发明人： Masaharu Wada , Kenji Tsuchida , Tsuneo Inaba , Atsushi Takeuchi , Toshimi Ikeda , Kuninori Kawabata
IPC分类号： G11C800
CPC分类号： G11C5/063
摘要： A semiconductor memory device has a segment type word line structure and comprises a plurality of main word lines and a plurality of sub word lines which are arranged at different levels. The semiconductor memory device is provided with a memory cell array divided into a plurality of cell array blocks. A plurality of sub row decoder areas, each for selecting one of the sub word lines, are defined between the cell array blocks. A plurality of first metal wiring lines formed by use of the same wiring layer as the main word lines are provided. The first metal wiring lines pass across the sub row decoder areas and the cell array blocks.
摘要翻译：半导体存储器件具有段类型的字线结构，并且包括多个主字线和排列在不同电平的多个子字线。半导体存储器件设置有分成多个单元阵列块的存储单元阵列。在单元阵列块之间定义多个用于选择一个子字线的子行解码器区域。提供了通过使用与主字线相同的布线层形成的多个第一金属布线。第一金属布线穿过子行解码器区域和单元阵列块。

10. 发明授权

US07269060B2 Magnetic random access memory 有权
公开(公告)号：US07269060B2
公开(公告)日：2007-09-11
申请号：US11298597
申请日：2005-12-12
申请人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
发明人： Ryousuke Takizawa , Kenji Tsuchida , Tsuneo Inaba
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic random access memory includes first write lines separated from one another and extending along a first direction. Second write lines extend in a direction different from the first direction. The MTJ elements are provided between the first write lines and the second write lines. Connection lines connect the first write lines. Sinkers are connected to ends of the first write lines and to the first write lines at between the connection lines and extract currents from the first write lines. Drivers are connected to ends of the first write lines and supply currents to the first write lines.

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