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1. 发明申请

US20110084609A1 ILLUMINATION DEVICE, AUTOMOTIVE LIGHTING EQUIPMENT, AND VEHICLE 有权
标题翻译：照明设备，汽车照明设备和车辆
公开(公告)号：US20110084609A1
公开(公告)日：2011-04-14
申请号：US12885073
申请日：2010-09-17
申请人： Yoshinobu KAWAGUCHI , Kenichi Yoshimura , Masamichi Harada , Katsuhiko Kishimoto
发明人： Yoshinobu KAWAGUCHI , Kenichi Yoshimura , Masamichi Harada , Katsuhiko Kishimoto
IPC分类号： B60Q1/08 , H05B37/02
CPC分类号： F21V23/0442 , F21S41/14 , F21S41/16 , F21S45/10 , F21V9/30 , F21W2102/00 , F21Y2115/30 , H01S5/005
摘要： An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.
摘要翻译：提供了一种提高眼睛安全性的照明装置。照明装置包括：半导体激光元件，用作发射激光的激发光源; 荧光板，其包含用于发射所需颜色的光的荧光物质，并且用从所述半导体激光元件发射的激光照射; 检测从荧光板反射的光的受光元件部; 以及光源控制部，其基于来自所述受光元件部的检测信号，控制从所述半导体激光元件发出的激光。

2. 发明申请

US20100316082A1 NITRIDE SEMICONDUCTOR LASER CHIP 有权
标题翻译：硝酸盐半导体激光芯片
公开(公告)号：US20100316082A1
公开(公告)日：2010-12-16
申请号：US12785523
申请日：2010-05-24
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0282 , H01S5/22
摘要： A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.
摘要翻译：提供氮化物半导体激光器芯片，其即使在高输出时也提供足够的可靠性。氮化物半导体激光器芯片具有形成在衬底上的氮化物半导体层，形成在氮化物半导体层上的谐振器面，以及形成在谐振器面上并包含Ar的涂膜。涂膜在与谐振器面相邻并且在其附近的区域中具有低Ar含量的低Ar区，并且在与谐振器面相反的该低Ar区一侧具有高Ar Ar含量高于低Ar区的区域。

3. 发明授权

US07820542B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07820542B2
公开(公告)日：2010-10-26
申请号：US12659149
申请日：2010-02-26
申请人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L21/3205
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译：在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

4. 发明授权

US07792169B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07792169B2
公开(公告)日：2010-09-07
申请号：US11713760
申请日：2007-03-05
申请人： Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01S3/04
CPC分类号： H01S5/0287 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/221 , H01S5/223 , H01S5/2231 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.
摘要翻译：氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。第二涂膜的厚度为80nm以上1000nm以下。这里，第一涂膜的厚度优选为6nm以上200nm以下。

5. 发明申请

US20100159626A1 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
公开(公告)号：US20100159626A1
公开(公告)日：2010-06-24
申请号：US12659149
申请日：2010-02-26
申请人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L21/20
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

6. 发明授权

US07701994B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
公开(公告)号：US07701994B2
公开(公告)日：2010-04-20
申请号：US11311138
申请日：2005-12-20
申请人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

7. 发明授权

US07697585B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US07697585B2
公开(公告)日：2010-04-13
申请号：US11651074
申请日：2007-01-09
申请人： Ryuichi Sogabe , Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Ryuichi Sogabe , Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/162 , H01S5/34326
摘要： A semiconductor laser diode comprising a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of active layer as well as a first dielectric film of an oxide and a second dielectric film of an oxynitride successively stacked on one cavity facet has sufficient initial characteristics with a film structure having excellent heat radiability for allowing stable high-output lasing over a long period without reducing a catastrophic optical damage level on an emission end.
摘要翻译：一种半导体激光二极管，包括具有活性层的半导体衬底，所述有源层具有在有源层的两端彼此相对的一对腔面，以及氧化物的第一电介质膜和连续层叠在一个上的氧氮化物的第二电介质膜空腔面具有足够的初始特性，其膜结构具有优异的热辐射性，用于在长时间内允许稳定的高输出激光，而不会降低发射端的灾难性光学损伤水平。

8. 发明授权

US07691653B2 Nitride semiconductor laser element and method for manufacturing the same 失效
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US07691653B2
公开(公告)日：2010-04-06
申请号：US11500334
申请日：2006-08-08
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/2231
摘要： A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by “a”, an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face before the exposure is represented by “b”, a ratio of nitrogen to gallium in the surface of the resonator end face after the exposure to the first plasma atmosphere is represented by “d”, and an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face after the exposure is represented by “e”, the value “g” that is expressed by g=(b·d)/(a·e) is set to a value that satisfies g≧0.8.
摘要翻译：具有氮化物半导体层的衬底被切割以形成谐振器端面，在其上形成涂膜以便形成氮化物半导体激光棒。这被分为氮化物半导体激光元件。在共振器端面上形成涂膜之前，共振器端面暴露于由含有氮气的气体产生的等离子体气氛中。当曝光前共振器端面表面的氮与镓的比例由“a”表示时，曝光前共振器端面的表面内的氮与镓的平均值由“ b“，在暴露于第一等离子体气氛之后，共振器端面的表面中的氮与镓的比率由”d“表示，并且从谐振器端的表面的内部的氮与镓的平均值曝光后的面由“e”表示，由g =（b·d）/（a·e）表示的值“g”被设定为满足g≥0.8的值。

9. 发明申请

US20090218593A1 Nitride semiconductor light emitting device and method of frabicating nitride semiconductor laser device 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090218593A1
公开(公告)日：2009-09-03
申请号：US12382530
申请日：2009-03-18
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/2036 , H01S5/22
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
摘要翻译：提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。

10. 发明申请

US20090159923A1 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 审中-公开
公开(公告)号：US20090159923A1
公开(公告)日：2009-06-25
申请号：US12314402
申请日：2008-12-10
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

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