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1. 发明授权

US07199398B2 Nitride semiconductor light emitting device having electrode electrically separated into at least two regions 有权
标题翻译：氮化物半导体发光器件具有电分离成至少两个区域的电极
公开(公告)号：US07199398B2
公开(公告)日：2007-04-03
申请号：US10719739
申请日：2003-11-20
申请人： Tomoki Ono , Shigetoshi Ito , Toshiyuki Okumura , Hirokazu Mouri , Kyoko Matsuda , Toshiyuki Kawakami , Takeshi Kamikawa , Yoshihiko Tani
发明人： Tomoki Ono , Shigetoshi Ito , Toshiyuki Okumura , Hirokazu Mouri , Kyoko Matsuda , Toshiyuki Kawakami , Takeshi Kamikawa , Yoshihiko Tani
IPC分类号： H01L29/10 , H01L29/22 , H01L21/00 , H01S3/097
CPC分类号： H01L33/38 , H01L33/32 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.
摘要翻译：氮化物半导体发光器件至少包括衬底，由主要包含In和Ga的氮化物半导体形成的有源层，p电极和n电极。 p电极和n电极中的至少一个电分离成至少两个区域。

2. 发明授权

US08170076B2 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US08170076B2
公开(公告)日：2012-05-01
申请号：US12982231
申请日：2010-12-30
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

3. 发明授权

US08548019B2 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US08548019B2
公开(公告)日：2013-10-01
申请号：US13438423
申请日：2012-04-03
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito , Susumu Omi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条状结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

4. 发明申请

US20110150022A1 GAN LASER ELEMENT 有权
标题翻译： GAN激光元素
公开(公告)号：US20110150022A1
公开(公告)日：2011-06-23
申请号：US12982231
申请日：2010-12-30
申请人： Toshiyuki KAWAKAMI , Tomoki Ono , Shigetoshi Ito
发明人： Toshiyuki KAWAKAMI , Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S5/22 , H01S5/323
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条状结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

5. 发明授权

US07167489B2 GaN-based semiconductor laser device 有权
标题翻译： GaN基半导体激光器件
公开(公告)号：US07167489B2
公开(公告)日：2007-01-23
申请号：US10490582
申请日：2002-07-18
申请人： Toshiyuki Kawakami , Yukio Yamasaki , Tomoki Ono , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Yukio Yamasaki , Tomoki Ono , Shigetoshi Ito , Susumu Omi
IPC分类号： H01S3/098 , H01S3/13 , H01S5/00
CPC分类号： H01S5/32341 , H01S5/0654 , H01S5/0655 , H01S5/10 , H01S5/1064 , H01S5/2231
摘要： According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 μm from the waveguide. According to another aspect of the present invention, a gan-based semiconductor laser device includes first conductivity type semiconductor layers, a semiconductor active layer and second conductivity type semiconductor layers stacked sequentially. The laser device further includes a ridge stripe provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion provided on the ridge stripe. The current-introducing window portion includes a narrow portion that is locally narrowed compared to the width of the ridge stripe.
摘要翻译：根据本发明的一个方面，氮化物半导体激光器件包括氮化物半导体有源层和用于引导在有源层中产生的光的条形波导。至少一对光吸收膜设置在条状波导的相对侧上的至少局部区域中，以达到距波导0.3μm的距离。根据本发明的另一方面，一种基于半导体的半导体激光器件包括依次层叠的第一导电型半导体层，半导体有源层和第二导电型半导体层。激光装置还包括设置成使得在与空腔的纵向方向交叉的横向方向上限制光的折射率差异的脊条和设置在脊条上的电流引入窗口部分。电流引入窗口部分包括与脊条的宽度相比局部变窄的窄部分。

6. 发明申请

US20050030995A1 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US20050030995A1
公开(公告)日：2005-02-10
申请号：US10932775
申请日：2004-09-01
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito , Susumu Omi
IPC分类号： G01Q60/00 , G01Q90/00 , H01S5/10 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device (100) having a GaN-based semiconductor stacked-layered structure including a light emitting layer (106), the semiconductor stacked-layered structure includes a ridge stripe structure (111) causing a stripe-shaped waveguide, and has side surfaces (117, 118) opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces (117, 118) is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层（106）的GaN基半导体层叠结构的GaN系激光器件（100）中，所述半导体层叠结构体包括引起条状波导的脊条结构（111）并且具有彼此相对的侧表面（117,118），以使条形波导沿其宽度方向夹持。处理至少一个侧表面（117,118）的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

7. 发明授权

US06735231B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06735231B2
公开(公告)日：2004-05-11
申请号：US10037999
申请日：2001-11-09
申请人： Tomoki Ono , Shigetoshi Ito
发明人： Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/3214 , H01S5/34333
摘要： A semiconductor laser device includes an active layer and a layer greater in bandgap energy than the active layer and having a stacked-layer structure mainly of gallium-nitride-based semiconductor for lasing. This device includes a gallium-nitride-based semiconductor layer substantially equal in bandgap to the active layer and containing at least one element selected from the group consisting of As, P and Sb for saturable absorption at a location apart from the active layer and inside the layer greater in bandgap energy than the active layer.
摘要翻译：半导体激光器件包括有源层和具有比有源层更大的带隙能量的层，并且具有主要由用于激光的氮化镓基半导体的堆叠层结构。该器件包括氮化镓基半导体层，该氮化镓基半导体层与有源层的带隙基本相等，并且在离开有源层的位置处包含从As，P和Sb中选择的至少一种元素用于可饱和吸收，层的能隙比活性层更大。

8. 发明授权

US06593595B2 Semiconductor light-emitting device and method for producing same 有权
公开(公告)号：US06593595B2
公开(公告)日：2003-07-15
申请号：US10075760
申请日：2002-02-12
申请人： Tomoki Ono , Shigetoshi Ito
发明人： Tomoki Ono , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01S5/32341 , H01S5/0658 , H01S5/22
摘要： A semiconductor light-emitting device of the present invention includes: a substrate; a light-emitting layer provided above the substrate; and a saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs. The semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer, and the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.

9. 发明授权

US06888867B2 Semiconductor laser device and fabrication method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06888867B2
公开(公告)日：2005-05-03
申请号：US10109458
申请日：2002-03-26
申请人： Nobuhiko Sawaki , Yoshio Honda , Norifumi Kameshiro , Masahito Yamaguchi , Norikatsu Koide , Shigetoshi Ito , Tomoki Ono , Katsuki Furukawa
发明人： Nobuhiko Sawaki , Yoshio Honda , Norifumi Kameshiro , Masahito Yamaguchi , Norikatsu Koide , Shigetoshi Ito , Tomoki Ono , Katsuki Furukawa
IPC分类号： H01S5/02 , H01S5/042 , H01S5/32 , H01S5/323 , H01S5/00
CPC分类号： H01S5/32341 , H01S5/0207 , H01S5/021 , H01S5/0425 , H01S5/3203 , H01S2304/00
摘要： A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.
摘要翻译：半导体激光器件包括衬底和由衬底上形成的氮化物半导体构成的n-GaN层。衬底包括具有从衬底的主平面倾斜62度的平面或从倾斜面任意方向倾斜3度的平面的斜面的沟槽。在斜面上形成n-GaN层。在n-GaN层上形成有由氮化物半导体构成的下包层，有源层和上覆层。有源层具有基本上与主平面的平面取向一致的平面取向。

10. 发明授权

US07899100B2 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US07899100B2
公开(公告)日：2011-03-01
申请号：US10932775
申请日：2004-09-01
申请人： Toshiyuki Kawakami , Tomoki Ono
发明人： Toshiyuki Kawakami , Tomoki Ono
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条状结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

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