专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5002011A Vapor deposition apparatus 失效
标题翻译：蒸镀装置
公开(公告)号：US5002011A
公开(公告)日：1991-03-26
申请号：US181091
申请日：1988-04-13
申请人： Toshimitsu Ohmine , Keiichi Akagawa , Akira Ishihata
发明人： Toshimitsu Ohmine , Keiichi Akagawa , Akira Ishihata
IPC分类号： C23C16/458
CPC分类号： C23C16/4588
摘要： A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor carrier to hold the substrates respectively, a driving motor for rotating the susceptor carrier such that the substrates held by the susceptors are revolved with respect to the reactor vessel, and a converting mechanism for converting a rotating motion of the susceptor carrier rotated by the driving motor into a motion for rotating the susceptors together with the substrates around themselves. The converting mechanism is disposed within the hollow of the susceptor carrier.
摘要翻译：一种用于在具有反应气体的基板上形成薄膜的气相沉积设备，通过在反应器容器中加热基板的同时旋转和旋转基板，包括可旋转地设置在反应器容器内的中空基座托架，可旋转地设置在基座托架上的托架所述基板分别用于使所述基座托架旋转使得由所述基座保持的基板相对于所述反应堆容器旋转的驱动马达;以及用于将由所述驱动马达旋转的所述基座托架的旋转运动转换成运动的转换机构用于使基座与其周围的基板一起旋转。转换机构设置在基座托架的中空部内。

2. 发明授权

US5151133A Vapor deposition apparatus 失效
标题翻译：蒸镀装置
公开(公告)号：US5151133A
公开(公告)日：1992-09-29
申请号：US639182
申请日：1991-01-09
申请人： Toshimitsu Ohmine , Keiichi Akagawa , Akira Ishihata
发明人： Toshimitsu Ohmine , Keiichi Akagawa , Akira Ishihata
IPC分类号： C23C16/458
CPC分类号： C23C16/4588
摘要： A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor carrier to hold the substrates respectively, a driving motor for rotating the susceptor carrier such that the substrates held by the susceptors are revolved with respect to the reactor vessel, and a converting mechanism for converting a rotation motion of the susceptor carrier rotated by the driving motor into a motion for rotating the susceptors together with the substrates around themselves. The converting mechanism is disposed within the hollow of the susceptor carrier.
摘要翻译：一种用于在具有反应气体的基板上形成薄膜的气相沉积设备，通过在反应器容器中加热基板的同时旋转和旋转基板，包括可旋转地设置在反应器容器内的中空基座托架，可旋转地设置在基座托架上的托架所述基板分别用于使所述基座托架旋转使得由所述基座保持的基板相对于所述反应堆容器旋转的驱动马达和用于将由所述驱动马达旋转的所述基座托架的旋转运动转换为运动的转换机构用于使基座与其周围的基板一起旋转。转换机构设置在基座托架的中空部内。

3. 发明授权

US5205870A Vapor deposition apparatus 失效
标题翻译：蒸镀装置
公开(公告)号：US5205870A
公开(公告)日：1993-04-27
申请号：US890145
申请日：1992-05-29
申请人： Yuusuke Sato , Akio Ui , Keiichi Akagawa , Toshimitsu Ohmine
发明人： Yuusuke Sato , Akio Ui , Keiichi Akagawa , Toshimitsu Ohmine
IPC分类号： H01L21/205 , C23C16/48
CPC分类号： C23C16/483
摘要： An argon (Ar.sup.+) laser has a resonator. A reaction chamber is integrally formed in the resonator. A voltage is applied to electrodes, which discharge electricity to excite argon atoms in the resonator to produce a laser beam. The laser beam is continuously oscillated between total reflection mirrors disposed at opposite ends of the resonator. A substrate is disposed in the reaction chamber into which a material gas is introduced. The material gas absorbs the laser beam, to decompose and deposit as a thin film over the substrate.
摘要翻译：氩（Ar +）激光器具有谐振器。在谐振器中一体地形成反应室。电压被施加到电极，其放电以激发谐振器中的氩原子以产生激光束。激光束在设置在谐振器的相对端的全反射镜之间连续振荡。基板被设置在反应室中，材料气体被引入到该反应室中。材料气体吸收激光束，在衬底上分解和沉积成薄膜。

4. 发明授权

US5088444A Vapor deposition system 失效
标题翻译：蒸气沉积系统
公开(公告)号：US5088444A
公开(公告)日：1992-02-18
申请号：US487188
申请日：1990-03-01
申请人： Toshimitsu Ohmine , Keiichi Akagawa
发明人： Toshimitsu Ohmine , Keiichi Akagawa
IPC分类号： C23C16/54 , H01L21/677
CPC分类号： H01L21/67748 , C23C16/54
摘要： A vapor deposition system deposits a semiconductor film on a substrate. The system comprises a susceptor on which the substrate is positioned, and a reactor tube in which the susceptor having the substrate is positioned and the semiconductor film is deposited on the substrate. The reactor tube is composed of two parts to be fitted to and separated from each other. An airtight vessel airtightly covers the reactor tube. The system further comprises a mover for moving at least one of the two parts of the reactor tube relative to the other part, thereby fitting and separating the two parts to and from each other. A carrying device is provided for the system to carry the susceptor having the substrate from the airtight vessel into the reactor tube through an opening to be opened by separating the two parts of the reactor tube from each other, and to carry the susceptor from the reactor tube to the airtight vessel through the opening.
摘要翻译：蒸镀系统将半导体膜沉积在基板上。该系统包括其上定位有基底的感受体，以及反应器管，其中具有基底的基座被定位并且半导体膜沉积在基底上。反应器管由两部分组成，以便彼此装配和分离。气密的船舶气密地覆盖反应管。该系统还包括用于相对于另一部分移动反应器管的两个部分中的至少一个的移动器，从而将两个部件彼此配合和分离。提供了一种承载装置，用于将具有基材的基座从气密容器通过打开的开口携带到反应器管中，该开口通过将反应器管的两个部分彼此分离，并将基座从反应器通过开口管到气密的容器。

5. 发明授权

US5527393A Vapor-phase deposition apparatus and vapor-phase deposition method 失效
公开(公告)号：US5527393A
公开(公告)日：1996-06-18
申请号：US531655
申请日：1995-09-21
申请人： Yuusuke Sato , Toshimitsu Ohmine
发明人： Yuusuke Sato , Toshimitsu Ohmine
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4582 , C23C16/481 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A vapor-phase deposition apparatus comprises a substrate-supporting unit for supporting a substrate, a heater for heating the substrate-supporting unit, and a gas-supplying unit for supplying gas for forming a thin film on the substrate supported by the substrate-supporting unit. The substrate-supporting unit includes a first member to be heated to a predetermined temperature by the heater, a second member for supporting a peripheral part of the substrate, and a support member for supporting the second member on the first member and located outside a periphery of the substrate.

6. 发明授权

US06365231B2 Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process 失效
标题翻译：卤化铵消除器，化学气相沉积系统和化学气相沉积工艺
公开(公告)号：US06365231B2
公开(公告)日：2002-04-02
申请号：US09344484
申请日：1999-06-25
申请人： Yuusuke Sato , Takashi Kataoka , Naoki Tamaoki , Toshimitsu Ohmine
发明人： Yuusuke Sato , Takashi Kataoka , Naoki Tamaoki , Toshimitsu Ohmine
IPC分类号： C23C1634
CPC分类号： C23C16/345 , C23C16/452
摘要： The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.
摘要翻译：本发明提供使用作为原料气体的硅化合物和肼或其衍生物或含有硅和氮的化合物的化学气相沉积，以及用于化学气相沉积生长的方法和系统，其中氯化硅烷化合物和氨，原料气体彼此预先反应，并且所得到的通过预反应产生的卤化铵的反应气体混合物被排出，在基板上形成薄膜。

7. 发明授权

US5230925A Gas-phase growing method and apparatus for the method 失效
标题翻译：气相生长方法和方法
公开(公告)号：US5230925A
公开(公告)日：1993-07-27
申请号：US719628
申请日：1991-06-24
申请人： Toshimitsu Ohmine
发明人： Toshimitsu Ohmine
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/18
CPC分类号： C30B29/06 , C23C16/045 , C23C16/402 , C23C16/44 , C23C16/45557 , C30B25/18
摘要： A gas-phase growing apparatus is provided with a reaction furnace, and a substrate having a minute depression is placed inside the reaction furnace. In the reaction furnace, a reaction gas is supplied onto the substrate, so as to cause gas-phase growth of a layer of a reaction product within the depression of the substrate. The reaction gas is supplied such that the pressure in the reaction furnace is alternately changed between a first pressure and a second pressure. The first pressure is a pressure capable of producing a continuous or intermediate stream in which the collision between the molecules of the reaction gas is predominant, while the second pressure is a pressure lower than the first pressure. The gas-phase growing apparatus is also provided with a pipe for introducing the reaction gas into the reaction furnace, a valve for controlling the flow rate of the reaction gas, a pump for discharging the unconverted reaction gas from the reaction furnace, an orifice for providing flow resistance for the discharge side of the reaction furnace, a pressure meter for measuring the internal pressure of the reaction furnace, and an electromagnetic valve operating in association with the pressure meter.

8. 发明授权

US4940213A Exhaust processing apparatus 失效
标题翻译：废气处理装置
公开(公告)号：US4940213A
公开(公告)日：1990-07-10
申请号：US222905
申请日：1988-07-22
申请人： Toshimitsu Ohmine , Takaaki Honda , Keiiti Akagawa
发明人： Toshimitsu Ohmine , Takaaki Honda , Keiiti Akagawa
IPC分类号： B01D53/00 , B01D53/34 , B01D53/46
CPC分类号： B01D53/34 , B01D53/00 , B01D53/46
摘要： An exhaust processing apparatus comprises a cracking furnace for cracking and solidifying exhaust discharged from a reactor for forming crystals on a semiconductor substrate, a first collecting device for collecting relatively large components solidified in the cracking furnace, a second collecting device for collecting relatively small solidified components passed through the first collecting device, and a chemical or a physical adsorbing member for chemically or physically adsorbing the exhaust passed through the first and second collecting devices.The apparatus may be provided with bypass piping for bypassing a particular section of the apparatus, a shutoff member for opening and closing the bypass piping and a control device for controlling the shutoff member.The cracking furnace of the apparatus has a heating portion for heating the exhaust, an enlarged portion disposed downstream the heating portion and having a passage whose cross-sectional area is larger than that of the heating portion, and a cooling mechanism for forcibly cooling the heated exhaust.
摘要翻译：废气处理装置包括：裂解炉，用于将从用于在半导体基板上形成晶体的反应器排出的废气进行裂化和固化;第一收集装置，用于收集在裂解炉中固化的相对大的组分;第二收集装置，用于收集较小的凝固组分通过第一收集装置，以及用于化学或物理吸附通过第一和第二收集装置的废气的化学或物理吸附构件。该设备可以设置有用于绕过设备的特定部分的旁路管道，用于打开和关闭旁路管道的关闭构件以及用于控制关闭构件的控制装置。该装置的裂解炉具有用于加热排气的加热部，设置在加热部下游的具有截面积大于加热部的通道的扩大部，以及强制冷却加热部的冷却机构排气。

9. 发明授权

US5991508A Thermal processing apparatus with a shield between heater and substrate 失效
标题翻译：热处理装置，在加热器和基板之间具有屏蔽
公开(公告)号：US5991508A
公开(公告)日：1999-11-23
申请号：US806678
申请日：1997-02-26
申请人： Toshimitsu Ohmine , Martin Schrems
发明人： Toshimitsu Ohmine , Martin Schrems
IPC分类号： H01L21/22 , H01L21/00 , H01L21/324 , F26B3/30
CPC分类号： H01L21/67115
摘要： A thermal processing apparatus having a substrate holding unit for mounting a substrate, a housing for constituting a processing chamber to house the substrate mounted on the substrate holding unit, a heat source arranged around the housing, and a shielding means arranged between the heat source and an end of the substrate, the shielding means serving to shield heat radiation radiated into the end of the substrate.
摘要翻译：一种热处理装置，具有用于安装基板的基板保持单元，用于构成处理室的壳体，用于容纳安装在基板保持单元上的基板，布置在壳体周围的热源，以及布置在热源和衬底的端部，屏蔽装置用于屏蔽辐射到衬底端部的热辐射。

10. 发明授权

US5897710A Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US5897710A
公开(公告)日：1999-04-27
申请号：US55996
申请日：1998-04-07
申请人： Yuusuke Sato , Toshimitsu Ohmine , Takaaki Honda
发明人： Yuusuke Sato , Toshimitsu Ohmine , Takaaki Honda
IPC分类号： C23C16/44 , C23C16/52 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/52 , C23C16/54 , H01L21/67161 , H01L21/67184 , H01L21/67201 , H01L21/67242
摘要： A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.
摘要翻译：将诸如半导体晶片的衬底转移到多个处理室，以执行规定的处理。检查室与每个处理室气密地连接。检查室设置有加载和卸载基板的处理器。在每个处理室和检查室之间设置闸阀。通过该闸阀，每个室都气密地关闭。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式