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1. 发明授权

US07229570B2 Slurry for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的浆料
公开(公告)号：US07229570B2
公开(公告)日：2007-06-12
申请号：US10616914
申请日：2003-07-11
申请人： Toshiji Taiji , Yasuaki Tsuchiya , Tomoyuki Ito , Kenichi Aoyagi , Shin Sakurai
发明人： Toshiji Taiji , Yasuaki Tsuchiya , Tomoyuki Ito , Kenichi Aoyagi , Shin Sakurai
IPC分类号： C09K13/00 , C09K13/06 , H01L21/302
CPC分类号： C09G1/02
摘要： The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.
摘要翻译：本发明涉及一种用于化学机械抛光的浆料，其包含二氧化硅抛光材料，氧化剂，苯并三唑类化合物，二酮和水。

2. 发明授权

US06478834B2 Slurry for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的浆料
公开(公告)号：US06478834B2
公开(公告)日：2002-11-12
申请号：US09989016
申请日：2001-11-20
申请人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
发明人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
IPC分类号： C09K314
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00
摘要： By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.
摘要翻译：通过使用至少包含抛光颗粒，氧化剂和高级单伯胺的抛光浆料，可以抑制在铜 - 铜合金化学机械抛光（CMP）中容易产生的凹陷和侵蚀，当在钽基金属的阻挡金属膜上形成铜基金属的掩埋互连时，基板上的金属膜。

3. 发明授权

US06530968B2 Chemical mechanical polishing slurry 有权
标题翻译：化学机械抛光浆
公开(公告)号：US06530968B2
公开(公告)日：2003-03-11
申请号：US09989021
申请日：2001-11-20
申请人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
发明人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
IPC分类号： C09G102
CPC分类号： C09K3/1463 , C09G1/02
摘要： This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.
摘要翻译：本发明提供了一种化学机械抛光浆料，用于抛光形成在绝缘膜上的金属膜，该金属膜在基材上具有凹陷，其中浆料含有不具有与研磨材料表面上的电荷相反的离子基团的增稠剂至0.001重量％或更多且少于0.05重量％，并且具有1mPa.s至5mPa.s的浆液粘度。抛光浆料可用于CMP以形成可靠的镶嵌电连接，其具有在较高抛光速率下具有优异电性能，即较高生产量，同时防止凹陷或侵蚀。

4. 发明授权

US06585786B2 Slurry for chemical mechanical polishing 有权
公开(公告)号：US06585786B2
公开(公告)日：2003-07-01
申请号：US09989218
申请日：2001-11-20
申请人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
发明人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00
摘要： By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

5. 发明授权

US06585568B2 Chemical mechanical polishing slurry 有权
公开(公告)号：US06585568B2
公开(公告)日：2003-07-01
申请号：US09990224
申请日：2001-11-21
申请人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
发明人： Yasuaki Tsuchiya , Tomoko Wake , Tetsuyuki Itakura , Shin Sakurai , Kenichi Aoyagi
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00
摘要： This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

6. 发明授权

US08329584B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08329584B2
公开(公告)日：2012-12-11
申请号：US13151867
申请日：2011-06-02
申请人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
发明人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , H01L21/76883
摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
摘要翻译：如下进行铜层的CMP后清洗工序。依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

7. 发明授权

US07601640B2 Method of manfacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07601640B2
公开(公告)日：2009-10-13
申请号：US11953127
申请日：2007-12-10
申请人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
发明人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , H01L21/76883
摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
摘要翻译：如下进行铜层的CMP后清洗工序。依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

8. 发明授权

US07955980B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07955980B2
公开(公告)日：2011-06-07
申请号：US12543128
申请日：2009-08-18
申请人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
发明人： Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , H01L21/76883
摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
摘要翻译：如下进行铜层的CMP后清洗工序。依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

9. 发明申请

US20080160750A1 METHOD OF MANFACTURING SEMICONCUDTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080160750A1
公开(公告)日：2008-07-03
申请号：US11953127
申请日：2007-12-10
申请人： Toshiyuki TAKEWAKI , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takahara Kunugi
发明人： Toshiyuki TAKEWAKI , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takahara Kunugi
IPC分类号： H01L21/302 , H01L21/44
CPC分类号： H01L21/02074 , H01L21/76883
摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
摘要翻译：如下进行铜层的CMP后清洗工序。依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

10. 发明授权

US06443807B1 Polishing process for use in method of fabricating semiconductor device 失效
标题翻译：用于制造半导体器件的方法的抛光工艺
公开(公告)号：US06443807B1
公开(公告)日：2002-09-03
申请号：US09702673
申请日：2000-11-01
申请人： Tetsuya Sakai , Yasuaki Tsuchiya
发明人： Tetsuya Sakai , Yasuaki Tsuchiya
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24D3/22 , H01L21/31053 , H01L21/3212
摘要： First, in a primary polishing step, a substrate is brought into close contact with a first pad including abrasives and made of a hard material, and the first pad is rotated while a first solution containing no abrasive is supplied onto the first pad to polish a surface of the substrate. In the primary polishing step, since the first solution contains no abrasive and the first pad is hard, polishing is performed with high flatness and extremely less dishing and erosion. Next, in a secondary polishing step, the substrate is brought into close contact with a second pad including no abrasive and made of a soft material, and the second pad is rotated while a second solution containing abrasives is supplied onto the second pad to polish the surface of the substrate. In the secondary polishing step, since the second solution contains the abrasives and the second pad is soft, scratches produced in the primary polishing step are reduced.
摘要翻译：首先，在一次抛光步骤中，将衬底与包括磨料的第一衬垫紧密接触并由硬质材料制成，并且第一衬垫旋转，而不含磨料的第一溶液被供应到第一衬垫上以抛光基板的表面。在一次抛光步骤中，由于第一溶液不含研磨剂，并且第一填料是硬的，所以以高的平整度和极少的凹陷和侵蚀进行抛光。接下来，在二次抛光步骤中，使衬底与不含研磨剂的第二衬垫紧密接触并由软材料制成，并且第二衬垫旋转，同时将含有磨料的第二溶液供应到第二衬垫上以抛光基板的表面。在二次抛光步骤中，由于第二溶液含有研磨剂，并且第二垫是柔软的，所以在一次抛光步骤中产生的划痕减小。

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