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1. 发明授权

US5144395A Optically driven semiconductor device 失效
标题翻译：光驱半导体器件
公开(公告)号：US5144395A
公开(公告)日：1992-09-01
申请号：US672764
申请日：1991-03-19
申请人： Toshiaki Miyajima , Kazumasa Kioi , Mituo Matunami , Tukasa Doi , Minoru Yoshioka , Masayoshi Koba
发明人： Toshiaki Miyajima , Kazumasa Kioi , Mituo Matunami , Tukasa Doi , Minoru Yoshioka , Masayoshi Koba
IPC分类号： H01L27/142 , H01L27/144
CPC分类号： H01L27/142 , H01L27/1443 , Y02E10/50
摘要： An optically driven semiconductor device is disclosed which comprises a semiconductor substrate, a plurality of vertical field effect transistors formed on the substrate, and a plurality of optoelectric transducers formed on an insulating film above the respective transistors, wherein the transistors have the substrate in common as a drain. Also disclosed is an optically driven semiconductor device which comprises a semiconductor substrate, a vertical field effect transistor formed on the substrate and a solar cell formed on an insulating film above the substrate, wherein the solar cell is formed with a polycrystalline silicon layer or monocrystalline silicon layer grown by the chemical vapor deposition method. Moreover, there are disclosed optically coupled semiconductor relay devices using these optically driven semiconductor devices.
摘要翻译：公开了一种光驱动的半导体器件，其包括半导体衬底，形成在衬底上的多个垂直场效应晶体管和形成在各个晶体管上方的绝缘膜上的多个光电换能器，其中晶体管的基板共同为排水还公开了一种光驱动的半导体器件，其包括半导体衬底，形成在衬底上的垂直场效应晶体管和形成在衬底上的绝缘膜上的太阳能电池，其中太阳能电池形成有多晶硅层或单晶硅通过化学气相沉积法生长的层。此外，公开了使用这些光驱动半导体器件的光耦合半导体继电器装置。

2. 发明授权

US4801351A Method of manufacturing monocrystalline thin-film 失效
标题翻译：制造单晶薄膜的方法
公开(公告)号：US4801351A
公开(公告)日：1989-01-31
申请号：US943428
申请日：1986-12-19
申请人： Katunobu Awane , Masayoshi Koba , Toshiaki Miyajima , Masashi Maekawa
发明人： Katunobu Awane , Masayoshi Koba , Toshiaki Miyajima , Masashi Maekawa
IPC分类号： C30B29/66 , H01L21/20 , C30B1/08
CPC分类号： H01L21/2026 , Y10S117/902 , Y10S117/904
摘要： Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '
摘要翻译：通过在非晶体绝缘膜上形成非晶或多晶材料的非单晶薄膜上施加能量束来进行单晶化操作的方法的改进。所得到的优异的单晶薄膜的晶体方向与单晶硅基板的晶体方向一致，即使绝缘膜厚度达到4μm，也形成在绝缘膜上。薄膜充分覆盖在单晶硅基板上的三维电路元件的有源层之间。

3. 发明授权

US5105090A Semiconductor device with a photodetector switching device 失效
标题翻译：具有光电转换开关装置的半导体器件
公开(公告)号：US5105090A
公开(公告)日：1992-04-14
申请号：US443278
申请日：1989-11-28
申请人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
发明人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
IPC分类号： H01L27/14 , H01L27/144 , H01L31/12 , H03K17/785
CPC分类号： H03K17/785 , H01L27/1443
摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.

4. 发明授权

US5223446A Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film 失效
标题翻译：具有在再结晶单晶硅膜上生长的光电检测器开关器件的半导体器件
公开(公告)号：US5223446A
公开(公告)日：1993-06-29
申请号：US777668
申请日：1991-10-16
申请人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
发明人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
IPC分类号： H01L27/144 , H03K17/785
CPC分类号： H01L27/1443 , H03K17/785
摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.Further disclosed is a method for manufacturing a semiconductor device comprising a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET.
摘要翻译：公开了一种半导体器件，其包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET，连接在第二MOSFET的栅极和源极之间的二极管，电阻器和光电换能器阵列，它们都在第二MOSFET的栅极和漏极之间彼此并联连接，其中所有的部件形成在单个半导体芯片上。还公开了一种半导体器件，包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常数第二MOSFET，第一电阻器和二极管，两者均串联连接在源极和漏极连接在第二MOSFET的栅极和源极之间的第二电阻器，连接在第二MOSFET的栅极和位于第一电阻器和二极管之间的端子之间的光电变换器阵列，其中所有部件形成在单个半导体芯片上。进一步公开的是一种制造半导体器件的方法，该半导体器件包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET，连接在第二MOSFET的栅极和源极之间的二极管，以及光电转换器阵列，它们都在第二MOSFET的栅极和漏极之间彼此并联连接。

5. 发明授权

US5998819A Thin ferroelectric film element having a multi-layered thin ferroelectric film and method for manufacturing the same 有权
标题翻译：具有多层薄铁电体薄膜的薄铁电薄膜元件及其制造方法
公开(公告)号：US5998819A
公开(公告)日：1999-12-07
申请号：US132896
申请日：1998-08-12
申请人： Seiichi Yokoyama , Yasuyuki Ito , Maho Ushikubo , Masayoshi Koba
发明人： Seiichi Yokoyama , Yasuyuki Ito , Maho Ushikubo , Masayoshi Koba
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/72
CPC分类号： H01L27/11502 , H01L21/28291 , H01L21/31691 , H01L27/11507 , H01L28/56 , H01L29/78391
摘要： A thin ferroelectric film element comprises upper and lower thin electrode films and a thin ferroelectric film formed on a substrate, wherein the thin ferroelectric film comprises at least three layers in which at least one layer has a composition of constituent elements different from those of the other layers and a resistivity higher than that of the other layers, and at least two layers of the others are the same composition of constituent element.
摘要翻译：薄铁电薄膜元件包括上和下薄电极薄膜和形成在基底上的薄铁电薄膜，其中薄铁电薄膜包括至少三层，其中至少一层具有不同于其它层的构成元素组成层和电阻率高于其它层的电阻率，并且其它层的至少两层是组成元素的相同组成。

6. 发明授权

US5262026A Method of manufacturing a device having a superconducting film 失效
标题翻译：制造具有超导膜的器件的方法
公开(公告)号：US5262026A
公开(公告)日：1993-11-16
申请号：US908922
申请日：1992-07-02
申请人： Hideo Nojima , Masayoshi Koba , Masaya Nagata , Hidetaka Shintaku
发明人： Hideo Nojima , Masayoshi Koba , Masaya Nagata , Hidetaka Shintaku
IPC分类号： H01L39/14 , H01L39/24 , C25D13/02 , B05D5/12
CPC分类号： H01L39/2429 , H01L39/143 , Y10S505/741
摘要： In a method for manufacturing a device having a film of high temperature superconductor, a copper substrate is used in the electrophoretic deposition as a cathode on which fine powders of superconductor should be deposited, and the fine powders deposited on the substrate are fired in the conditions that they are sintered partially.In other methods for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, and a minute pattern of fine powders is deposited according to the pattern of the cathode. Then, the fine powders are fired to form a superconductor film. Such a desired pattern of the cathode is formed by the patterning of a film of an electrically insulating substrate. Such a desired pattern of the cathode is also formed by the patterning of an electrically insulating material, applied to an electrically conductive substrate.In a further method for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, while another pattern of electrically conductive material as an anode is formed on the same substrate near the former pattern so as to keep a constant distance. The fine powders deposited on the former pattern are fired to form a superconductor film.
摘要翻译：在制造具有高温超导体膜的器件的方法中，在电泳沉积中使用铜衬底作为阴极，在其上沉积超导体的细粉末，并且沉积在衬底上的细粉末在条件下烧制它们被部分烧结。在制造这种器件的其它方法中，在基片上形成电泳沉积中作为阴极的导电材料的期望微小图案，并根据阴极的图案沉积细微粉末的微小图案。然后，烧制细粉以形成超导膜。通过图案化电绝缘基板的膜来形成阴极的这种期望的图案。阴极的这种期望图案也通过施加到导电基底上的电绝缘材料的图案形成。在制造这种器件的另一种方法中，在基片上形成作为电泳沉积中阴极的导电材料的期望的微小图案，而作为阳极的导电材料的另一图案形成在靠近前者的同一衬底上模式，以保持恒定的距离。将沉积在前一图案上的细粉末烧制以形成超导薄膜。

7. 发明授权

US06440591B1 Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof 失效
标题翻译：铁电薄膜涂布基板，其制造方法和电容器结构元件
公开(公告)号：US06440591B1
公开(公告)日：2002-08-27
申请号：US08646630
申请日：1996-05-08
申请人： Hironori Matsunaga , Takeshi Kijima , Sakiko Satoh , Masayoshi Koba
发明人： Hironori Matsunaga , Takeshi Kijima , Sakiko Satoh , Masayoshi Koba
IPC分类号： B32B900
CPC分类号： H01L28/56
摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a metal oxide buffer layer on a substrate, forming a first crystalline ferroelectric thin film thereon by means of a MOCVD method and forming a second ferroelectric thin film with a film thickness thicker than that of the first ferroelectric thin film thereon by means of the MOCVD method at a temperature lower than that of the first ferroelectric thin film. This producing method makes it possible to produce a ferroelectric thin film, where its surface is dense and even, a leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.
摘要翻译：通过在基板上形成金属氧化物缓冲层的制造方法，通过MOCVD法在其上形成第一结晶性强电介质薄膜，并形成膜厚度比第二强铁电体薄膜的铁电薄膜被覆基板在其上的第一铁电薄膜的温度低于第一铁电薄膜的温度，通过MOCVD方法。该制造方法使得可以在较低的温度下制备其表面致密甚至漏电流性能优异并且显示足够大的剩余自发极化的铁电薄膜。

8. 发明授权

US5593495A Method for manufacturing thin film of composite metal-oxide dielectric 失效
标题翻译：复合金属氧化物电介质薄膜的制造方法
公开(公告)号：US5593495A
公开(公告)日：1997-01-14
申请号：US435135
申请日：1995-05-05
申请人： Yoshiyuki Masuda , Ryusuke Kita , Hisako Arai , Noboru Ohtani , Masayoshi Koba
发明人： Yoshiyuki Masuda , Ryusuke Kita , Hisako Arai , Noboru Ohtani , Masayoshi Koba
IPC分类号： C01B13/14 , C01G21/00 , C01G23/00 , C23C18/12 , C30B5/00 , H01B3/00 , H01L37/02 , H01L41/39 , C30B1/10
CPC分类号： C23C18/1225 , C23C18/1216 , C23C18/1254 , C30B29/32 , C30B5/00
摘要： In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.
摘要翻译：在金属氧化物电介质薄膜的制造方法中，在第一工序中合成溶胶状态的前体溶液。该前体溶液由待制造的复合金属 - 氧化物电介质的材料的组成元素组成。在第二步中，通过旋涂将该前体溶液制成薄膜。在第三步骤中，将该溶胶状的薄膜干燥，将其转变为干燥凝胶的薄膜。此后，在第四步骤中，对干燥凝胶薄膜进行热分解，除去干凝胶薄膜中的有机物质，同时使该凝胶态薄膜结晶。

9. 发明授权

US5576564A Ferroelectric thin film with intermediate buffer layer 失效
标题翻译：铁电薄膜与中间缓冲层
公开(公告)号：US5576564A
公开(公告)日：1996-11-19
申请号：US365542
申请日：1994-12-28
申请人： Sakiko Satoh , Hironori Matsunaga , Kenji Nakanishi , Yoshiyuki Masuda , Masayoshi Koba
发明人： Sakiko Satoh , Hironori Matsunaga , Kenji Nakanishi , Yoshiyuki Masuda , Masayoshi Koba
IPC分类号： H01L21/8247 , H01L21/02 , H01L27/10 , H01L29/51 , H01L29/788 , H01L29/792 , H01L41/18 , H01L49/02 , H01L29/76
CPC分类号： H01L28/56 , H01L28/60 , H01L29/516 , H01L28/55
摘要： The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.
摘要翻译：本发明提供一种提供铁电晶体薄膜的衬底，其包括形成在半导体单晶衬底上的电极和通过缓冲层形成在电极上的Bi 4 Ti 3 O 12的铁电晶体薄膜。

10. 发明授权

US5491410A Superconducting magnetic sensor having a ferromagnetic element for converging an external magnetic field 失效
标题翻译：具有用于会聚外部磁场的铁磁元件的超导磁传感器
公开(公告)号：US5491410A
公开(公告)日：1996-02-13
申请号：US993241
申请日：1992-12-17
申请人： Hideo Nojima , Hidetaka Shintaku , Masaya Nagata , Manabu Fujimoto , Masayoshi Koba
发明人： Hideo Nojima , Hidetaka Shintaku , Masaya Nagata , Manabu Fujimoto , Masayoshi Koba
IPC分类号： G01R33/00 , G01R33/035 , G01R33/09 , H01L39/22 , G01R33/06
CPC分类号： G01R33/00 , G01R33/0352 , Y10S505/845
摘要： A superconductive magnetoresistor has a substrate, a ceramic superconductive film which is formed on one face of the substrate, ferromagnetic elements for focusing an external magnetic field, and an insulating film. One of the ferromagnetic elements is integrally combined with the other face of the substrate. The other of the ferromagnetic elements is combined with the ceramic superconductive film thorough the insulating film.
摘要翻译：超导磁电阻器具有衬底，形成在衬底的一个面上的陶瓷超导膜，用于聚焦外部磁场的铁磁元件和绝缘膜。铁磁元件中的一个与基板的另一面一体地组合。另外的铁磁元件通过绝缘膜与陶瓷超导膜组合。

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