专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100036533A1 AIR-CONDITIONING SYSTEM 有权
标题翻译：空调系统
公开(公告)号：US20100036533A1
公开(公告)日：2010-02-11
申请号：US12522946
申请日：2008-01-16
申请人： Yoshiyuki Masuda , Atsushi Nishino , Satoshi Hashimoto
发明人： Yoshiyuki Masuda , Atsushi Nishino , Satoshi Hashimoto
IPC分类号： G05B15/00 , F25D17/06
CPC分类号： F24F11/79 , F24F11/30 , F24F2110/20 , F24F2120/10 , F24F2120/12 , F24F2120/14 , F24F2221/38
摘要： An air-conditioning system includes an air-conditioning unit that is switchable between local air-conditioning and overall air-conditioning, a data acquisition unit configured to acquire state quantity data of a requester, and a control unit. The control unit calculates comfort assessment values for both the requester and a neighbor, and controls the air-conditioning unit so that the local air-conditioning is performed to an extent whereby the comfort assessment value of the neighbor is kept in a comfort range and the comfort assessment value of the requester can be within the comfort range.
摘要翻译：空调系统包括可在本地空调和整体空调之间切换的空调单元，被配置为获取请求者的状态数量数据的数据获取单元和控制单元。控制单元计算请求者和邻居的舒适评估值，并且控制空调单元，使得本地空调被执行到使邻居的舒适度评估值保持在舒适范围内的程度，并且请求者的舒适度评估值可以在舒适范围内。

2. 发明申请

US20080212304A1 Wave Absorber and Manufacturing Method of Wave Absorber 有权
标题翻译：波浪吸收器和吸波器的制造方法
公开(公告)号：US20080212304A1
公开(公告)日：2008-09-04
申请号：US10598345
申请日：2005-02-25
申请人： Yoshiyuki Masuda , Noboru Otani , Hisamatsu Nakano
发明人： Yoshiyuki Masuda , Noboru Otani , Hisamatsu Nakano
IPC分类号： H05K9/00 , H01Q17/00 , H05K3/10 , H05K3/46
CPC分类号： H05K9/0083 , H01Q1/38 , H01Q1/44 , H01Q15/00 , H01Q15/0013 , H01Q17/00 , H05K9/0086 , H05K9/0088 , Y10T29/49126
摘要： The problem of the present invention is to offer a wave absorber that has reflection attenuation capability sufficient to enable prevention of communication disturbances due to reflection and the like of EM waves, that enables greater thinness and lighter weight, and that has wide-band attenuation properties, as well as a manufacturing method of the wave absorber. The wave absorber of the present invention has a structure which sequentially laminates a grid-like conductor layer composed of an electric conductor, a first dielectric layer, a high-resistance conductor layer having a surface resistivity within a prescribed range, a second dielectric layer, and a pattern layer having multiple patterns composed of an electric conductor, wherein each pattern in said pattern layer differs in either or both of size and form relative to another adjacent pattern.
摘要翻译：本发明的问题是提供一种具有足够的反射衰减能力的波吸收体，能够防止由于EM波的反射等引起的通信干扰，从而能够实现更大的薄度和更轻的重量，并且具有宽带衰减特性，以及波吸收体的制造方法。本发明的波吸收体具有以下结构：依次层叠由导电体构成的格子状导体层，第一电介质层，表面电阻率在规定范围内的高电阻导体层，第二电介质层，以及具有由导电体组成的多个图案的图案层，其中所述图案层中的每个图案相对于另一相邻图案的大小和形状都有一个或两个不同。

3. 发明授权

US6100773A Impedance matching device 失效
标题翻译：阻抗匹配装置
公开(公告)号：US6100773A
公开(公告)日：2000-08-08
申请号：US157245
申请日：1998-09-18
申请人： Masumi Nakamichi , Yoshiyuki Masuda
发明人： Masumi Nakamichi , Yoshiyuki Masuda
IPC分类号： H01G7/06 , H01L27/01 , H03H7/38
CPC分类号： H03H7/38
摘要： An impedance matching device includes a variable capacitor constituted by a non-linear dielectric thin film and an upper electrode disposed on a lower electrode formed on a substrate. The non-linear dielectric thin film is formed by a deposition, screen-printing, electroplating, or other technique, and changes its relative dielectric constant according to applied voltage. Therefore, the capacity of the variable capacitor is controlled and the impedance is matched, by simply controlling the applied voltage across the non-linear dielectric thin film. Consequently, the arrangement makes it possible to cut down the impedance matching device in size and cost, compared to an arrangement incorporating a capacitor and a coil for adjustment, effects a much simpler matching operation, and facilitates a manufacturing process.
摘要翻译：阻抗匹配装置包括由非线性电介质薄膜构成的可变电容器和设置在形成于基板上的下电极上的上电极。非线性电介质薄膜通过沉积，丝网印刷，电镀或其它技术形成，并根据施加的电压改变其相对介电常数。因此，通过简单地控制跨越非线性电介质薄膜的施加电压来控制可变电容器的容量并且阻抗匹配。因此，与包括电容器和用于调整的线圈的布置相比，该布置使得可以减小尺寸和成本的阻抗匹配装置，实现了更简单的匹配操作，并且便于制造过程。

4. 发明授权

US5856242A Method of producing dielectric thin film element 失效
标题翻译：电介质薄膜元件的制造方法
公开(公告)号：US5856242A
公开(公告)日：1999-01-05
申请号：US672233
申请日：1996-06-27
申请人： Hisako Arai , Ryusuke Kita , Yoshiyuki Masuda , Noboru Ohtani , Yoshiyuki Matsu , Masayoshi Koba
发明人： Hisako Arai , Ryusuke Kita , Yoshiyuki Masuda , Noboru Ohtani , Yoshiyuki Matsu , Masayoshi Koba
IPC分类号： C04B35/46 , C01B13/14 , C23C14/08 , C23C14/34 , C23C14/35 , C23C14/54 , C23C14/58 , H01L21/283 , H01L21/31
CPC分类号： C23C14/5806 , C23C14/088 , C23C14/5853
摘要： A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.
摘要翻译：描述了用于制造用于电介质薄膜器件的氧化物电介质薄膜的方法。简而言之，加热成膜室，通过溅射或其它沉积方法形成约200nm厚的电介质薄膜。在形成膜之后，将成膜室抽真空，并将氧气引入室中。通过将膜在氧气氛中保持一段时间，其形成后膜被氧化，这可以包括冷却步骤。所得的电介质薄膜具有优良的介电特性，例如介电常数高，介电强度大。

5. 发明授权

US09162225B2 Microchip 有权
公开(公告)号：US09162225B2
公开(公告)日：2015-10-20
申请号：US13260728
申请日：2010-03-15
申请人： Hiroshi Hirayama , Takashi Washizu , Naoki Shimizu , Toshinori Takimura , Takehiko Goshima , Yoshiyuki Masuda
发明人： Hiroshi Hirayama , Takashi Washizu , Naoki Shimizu , Toshinori Takimura , Takehiko Goshima , Yoshiyuki Masuda
IPC分类号： G01N35/08 , B81B1/00 , B32B3/02 , B32B3/30 , B01L3/00 , B01J19/00 , G01N37/00 , G01N35/10
CPC分类号： B01L3/502715 , B01L3/502792 , B01L2200/027 , B01L2200/0684 , B01L2200/0689 , B01L2200/141 , B01L2200/142 , B01L2300/087 , B01L2300/089 , B01L2400/0688 , G01N2035/102 , G01N2035/1034
摘要： A microchip having a substrate, a cover member joined to one surface of the substrate, and a flow path formed on at least one of joined surfaces of the substrate and the cover member, wherein the microchip includes: a well which is an first opening for communicating into the flow path with a surface opposite to the joined surface of the substrate and is arranged on the substrate; and a chimney which is a member arranged so as to project from the surface opposite to the joined surface of the substrate and has an second opening which communicating into the well, wherein a liquid rise prevention section is formed in the chimney to prevent the liquid from rising to a top portion of the chimney.
摘要翻译：一种微芯片，其具有基板，与基板的一个表面接合的盖构件以及形成在基板和盖构件的至少一个接合面上的流路，其特征在于，所述微芯片包括：作为第一开口，以与衬底的接合表面相对的表面与流路连通并布置在衬底上; 以及烟囱，其是从与所述基板的接合面相反的面突出的构件，具有与所述井连通的第二开口，其中，在所述烟囱中形成液体上升防止部，上升到烟囱的顶部。

6. 发明授权

US07864095B2 Wave absorber and manufacturing method of wave absorber 有权
标题翻译：波浪吸收器及其制造方法
公开(公告)号：US07864095B2
公开(公告)日：2011-01-04
申请号：US10598345
申请日：2005-02-25
申请人： Yoshiyuki Masuda , Noboru Otani , Hisamatsu Nakano
发明人： Yoshiyuki Masuda , Noboru Otani , Hisamatsu Nakano
IPC分类号： H01Q17/00
CPC分类号： H05K9/0083 , H01Q1/38 , H01Q1/44 , H01Q15/00 , H01Q15/0013 , H01Q17/00 , H05K9/0086 , H05K9/0088 , Y10T29/49126
摘要： The problem of the present invention is to offer a wave absorber that has reflection attenuation capability sufficient to enable prevention of communication disturbances due to reflection and the like of EM waves, that enables greater thinness and lighter weight, and that has wide-band attenuation properties, as well as a manufacturing method of the wave absorber. The wave absorber of the present invention has a structure which sequentially laminates a grid-like conductor layer composed of an electric conductor, a first dielectric layer, a high-resistance conductor layer having a surface resistivity within a prescribed range, a second dielectric layer, and a pattern layer having multiple patterns composed of an electric conductor, wherein each pattern in said pattern layer differs in either or both of size and form relative to another adjacent pattern.
摘要翻译：本发明的问题是提供一种具有足够的反射衰减能力的波吸收体，能够防止由于EM波的反射等导致的通信干扰，从而能够实现更大的薄度和更轻的重量，并且具有宽带衰减特性，以及波吸收体的制造方法。本发明的波吸收体具有以下结构：依次层叠由导电体构成的格子状导体层，第一电介质层，表面电阻率在规定范围内的高电阻导体层，第二电介质层，以及具有由导电体组成的多个图案的图案层，其中所述图案层中的每个图案相对于另一相邻图案的大小和形状都有一个或两个不同。

7. 发明申请

US20080302981A1 Light-transmitting electromagnetic wave-shielding material 有权
标题翻译：透光电磁波屏蔽材料
公开(公告)号：US20080302981A1
公开(公告)日：2008-12-11
申请号：US12155404
申请日：2008-06-03
申请人： Takatoshi Matsumura , Masahiko Ishikawa , Yoshitaka Masuda , Noboru Ohtani , Yoshiya Kimura , Yoshiyuki Masuda , Noriyuki Kato
发明人： Takatoshi Matsumura , Masahiko Ishikawa , Yoshitaka Masuda , Noboru Ohtani , Yoshiya Kimura , Yoshiyuki Masuda , Noriyuki Kato
IPC分类号： G02B5/20
CPC分类号： B32B15/00 , G02B2207/121 , H01J2211/446 , H01J2329/869 , H05K9/0096
摘要： The present invention provides a light-transmitting electromagnetic wave-shielding material for use in displays or in-vehicle panels each having a polarizing plate or a retardation plate, wherein the light-transmitting electromagnetic wave-shielding material undergoes no generation of light interference fringes and is satisfactory in visibility even through sunglasses, goggles, glare-proof panels or glare-proof window materials having polarizing capability. By using unstretched light-transmitting organic polymer materials low in molecular orientation or small in molecular orientation unevenness as the base substrate of an electromagnetic wave-shielding layer, the light-transmitting electromagnetic wave-shielding material excellent in light interference fringe prevention capability can be obtained.
摘要翻译：本发明提供一种用于显示器或车载面板中的透光电磁波屏蔽材料，其具有偏振板或延迟板，其中透光电磁波屏蔽材料不产生光干涉条纹，即使通过太阳眼镜，护目镜，防眩光面板或具有偏振能力的防眩光窗口材料也能令人满意。通过使用分子取向性低，分子取向不均匀小的未拉伸透光性有机聚合物材料作为电磁波屏蔽层的基底，可以得到光干涉条纹防止能力优异的透光电磁波屏蔽材料。

8. 发明授权

US5907470A Dielectric thin film capacitor element 失效
标题翻译：介电薄膜电容元件
公开(公告)号：US5907470A
公开(公告)日：1999-05-25
申请号：US870629
申请日：1997-06-06
申请人： Ryusuke Kita , Yoshiyuki Masuda , Yoshiyuki Matsu , Noboru Ohtani , Seiki Yano
发明人： Ryusuke Kita , Yoshiyuki Masuda , Yoshiyuki Matsu , Noboru Ohtani , Seiki Yano
IPC分类号： C01G23/00 , C23C14/08 , C23C14/34 , H01G4/12 , H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/92 , H01G4/06
CPC分类号： H01G4/33 , H01G4/1227 , H01L28/40
摘要： The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.
摘要翻译：本发明提供一种电介质薄膜电容器元件，其中可以抑制泄漏电流随着时间的推移而在高温下通电并且具有优异的绝缘质量和可靠性及其制造方法。电介质薄膜电容器元件通过在基板上依次形成下电极，电介质薄膜和上电极而构成，其特征在于，所述电介质薄膜由氧化物材料由至少钛和锶组成并含有铒。

9. 发明授权

US5593495A Method for manufacturing thin film of composite metal-oxide dielectric 失效
标题翻译：复合金属氧化物电介质薄膜的制造方法
公开(公告)号：US5593495A
公开(公告)日：1997-01-14
申请号：US435135
申请日：1995-05-05
申请人： Yoshiyuki Masuda , Ryusuke Kita , Hisako Arai , Noboru Ohtani , Masayoshi Koba
发明人： Yoshiyuki Masuda , Ryusuke Kita , Hisako Arai , Noboru Ohtani , Masayoshi Koba
IPC分类号： C01B13/14 , C01G21/00 , C01G23/00 , C23C18/12 , C30B5/00 , H01B3/00 , H01L37/02 , H01L41/39 , C30B1/10
CPC分类号： C23C18/1225 , C23C18/1216 , C23C18/1254 , C30B29/32 , C30B5/00
摘要： In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.
摘要翻译：在金属氧化物电介质薄膜的制造方法中，在第一工序中合成溶胶状态的前体溶液。该前体溶液由待制造的复合金属 - 氧化物电介质的材料的组成元素组成。在第二步中，通过旋涂将该前体溶液制成薄膜。在第三步骤中，将该溶胶状的薄膜干燥，将其转变为干燥凝胶的薄膜。此后，在第四步骤中，对干燥凝胶薄膜进行热分解，除去干凝胶薄膜中的有机物质，同时使该凝胶态薄膜结晶。

10. 发明授权

US5576564A Ferroelectric thin film with intermediate buffer layer 失效
标题翻译：铁电薄膜与中间缓冲层
公开(公告)号：US5576564A
公开(公告)日：1996-11-19
申请号：US365542
申请日：1994-12-28
申请人： Sakiko Satoh , Hironori Matsunaga , Kenji Nakanishi , Yoshiyuki Masuda , Masayoshi Koba
发明人： Sakiko Satoh , Hironori Matsunaga , Kenji Nakanishi , Yoshiyuki Masuda , Masayoshi Koba
IPC分类号： H01L21/8247 , H01L21/02 , H01L27/10 , H01L29/51 , H01L29/788 , H01L29/792 , H01L41/18 , H01L49/02 , H01L29/76
CPC分类号： H01L28/56 , H01L28/60 , H01L29/516 , H01L28/55
摘要： The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.
摘要翻译：本发明提供一种提供铁电晶体薄膜的衬底，其包括形成在半导体单晶衬底上的电极和通过缓冲层形成在电极上的Bi 4 Ti 3 O 12的铁电晶体薄膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式