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1. 发明授权

US4801351A Method of manufacturing monocrystalline thin-film 失效
标题翻译：制造单晶薄膜的方法
公开(公告)号：US4801351A
公开(公告)日：1989-01-31
申请号：US943428
申请日：1986-12-19
申请人： Katunobu Awane , Masayoshi Koba , Toshiaki Miyajima , Masashi Maekawa
发明人： Katunobu Awane , Masayoshi Koba , Toshiaki Miyajima , Masashi Maekawa
IPC分类号： C30B29/66 , H01L21/20 , C30B1/08
CPC分类号： H01L21/2026 , Y10S117/902 , Y10S117/904
摘要： Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material formed on a non-crystalline insulating film. The resulting superior monocrystalline thin-film has a crystal direction coinciding with that of the monocrystalline silicon base-plate and is formed on the insulating film even if the insulating film is as thick as 4 .mu.m. The thin-film is sufficiently covered between the active layers of a three-dimensional circuit element on the monocrystalline silicon base plate. '
摘要翻译：通过在非晶体绝缘膜上形成非晶或多晶材料的非单晶薄膜上施加能量束来进行单晶化操作的方法的改进。所得到的优异的单晶薄膜的晶体方向与单晶硅基板的晶体方向一致，即使绝缘膜厚度达到4μm，也形成在绝缘膜上。薄膜充分覆盖在单晶硅基板上的三维电路元件的有源层之间。

2. 发明授权

US5144395A Optically driven semiconductor device 失效
标题翻译：光驱半导体器件
公开(公告)号：US5144395A
公开(公告)日：1992-09-01
申请号：US672764
申请日：1991-03-19
申请人： Toshiaki Miyajima , Kazumasa Kioi , Mituo Matunami , Tukasa Doi , Minoru Yoshioka , Masayoshi Koba
发明人： Toshiaki Miyajima , Kazumasa Kioi , Mituo Matunami , Tukasa Doi , Minoru Yoshioka , Masayoshi Koba
IPC分类号： H01L27/142 , H01L27/144
CPC分类号： H01L27/142 , H01L27/1443 , Y02E10/50
摘要： An optically driven semiconductor device is disclosed which comprises a semiconductor substrate, a plurality of vertical field effect transistors formed on the substrate, and a plurality of optoelectric transducers formed on an insulating film above the respective transistors, wherein the transistors have the substrate in common as a drain. Also disclosed is an optically driven semiconductor device which comprises a semiconductor substrate, a vertical field effect transistor formed on the substrate and a solar cell formed on an insulating film above the substrate, wherein the solar cell is formed with a polycrystalline silicon layer or monocrystalline silicon layer grown by the chemical vapor deposition method. Moreover, there are disclosed optically coupled semiconductor relay devices using these optically driven semiconductor devices.
摘要翻译：公开了一种光驱动的半导体器件，其包括半导体衬底，形成在衬底上的多个垂直场效应晶体管和形成在各个晶体管上方的绝缘膜上的多个光电换能器，其中晶体管的基板共同为排水还公开了一种光驱动的半导体器件，其包括半导体衬底，形成在衬底上的垂直场效应晶体管和形成在衬底上的绝缘膜上的太阳能电池，其中太阳能电池形成有多晶硅层或单晶硅通过化学气相沉积法生长的层。此外，公开了使用这些光驱动半导体器件的光耦合半导体继电器装置。

3. 发明授权

US5105090A Semiconductor device with a photodetector switching device 失效
标题翻译：具有光电转换开关装置的半导体器件
公开(公告)号：US5105090A
公开(公告)日：1992-04-14
申请号：US443278
申请日：1989-11-28
申请人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
发明人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
IPC分类号： H01L27/14 , H01L27/144 , H01L31/12 , H03K17/785
CPC分类号： H03K17/785 , H01L27/1443
摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.

4. 发明授权

US5223446A Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film 失效
标题翻译：具有在再结晶单晶硅膜上生长的光电检测器开关器件的半导体器件
公开(公告)号：US5223446A
公开(公告)日：1993-06-29
申请号：US777668
申请日：1991-10-16
申请人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
发明人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
IPC分类号： H01L27/144 , H03K17/785
CPC分类号： H01L27/1443 , H03K17/785
摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.Further disclosed is a method for manufacturing a semiconductor device comprising a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET.
摘要翻译：公开了一种半导体器件，其包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET，连接在第二MOSFET的栅极和源极之间的二极管，电阻器和光电换能器阵列，它们都在第二MOSFET的栅极和漏极之间彼此并联连接，其中所有的部件形成在单个半导体芯片上。还公开了一种半导体器件，包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常数第二MOSFET，第一电阻器和二极管，两者均串联连接在源极和漏极连接在第二MOSFET的栅极和源极之间的第二电阻器，连接在第二MOSFET的栅极和位于第一电阻器和二极管之间的端子之间的光电变换器阵列，其中所有部件形成在单个半导体芯片上。进一步公开的是一种制造半导体器件的方法，该半导体器件包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET，连接在第二MOSFET的栅极和源极之间的二极管，以及光电转换器阵列，它们都在第二MOSFET的栅极和漏极之间彼此并联连接。

5. 发明授权

US5376392A Food packaging bag 失效
标题翻译：食品包装袋
公开(公告)号：US5376392A
公开(公告)日：1994-12-27
申请号：US839763
申请日：1992-05-05
申请人： Shigeyoshi Ikegami , Hisashi Kojyoh , Iu Uchida , Tadayoshi Yamazaki , Toshiaki Miyajima
发明人： Shigeyoshi Ikegami , Hisashi Kojyoh , Iu Uchida , Tadayoshi Yamazaki , Toshiaki Miyajima
IPC分类号： B32B5/18 , B32B7/02 , B65D81/34 , B32B7/10 , B65D30/02
CPC分类号： B65D81/3461 , B32B5/18 , B32B7/02 , B65D81/34 , B65D81/3415 , B65D2205/00 , Y10T428/1307 , Y10T428/1341 , Y10T428/1376 , Y10T428/1379 , Y10T428/24331 , Y10T428/249982 , Y10T428/249992 , Y10T428/249993 , Y10T428/2826 , Y10T428/2848
摘要： The present invention relates to a food packaging bag comprising a water-resistant perforated sheet part which composes of at least a part of an outer layer of the bag, a moisture permeable waterproof film which is laminated by bonding in part to an inside of the perforated sheet part as an inner layer to form a moisture permeable waterproof part, and a waterproof sheet part which composes of the rest of the outer layer part. Further, when, if desired, an absorbent sheet layer is provided on at least a part of the inside of the waterproof sheet part, the functions of the moisture permeable waterproof film such as moisture permeability are scarcely impaired when the packed food is heat-cooked, and the moisture permeable waterproof film weak in strength is seldom broken by scraping distribution or bursting during cooking with heat. Unsticky, particularly the bottom of the food being unsticky too, as to the bag having the absorbent sheet at the bottom, and hot cooked foods can be obtained through the processes wherein the food is packed in the bag, the opening is completely heat-sealed and it is put into hot water, or the bag is heated in a microwave oven to steam cook, or the bag is untightly sealed by simply folding or using laveIs and it is heat-cooked in the microwave oven to heat-cook.
摘要翻译： PCT No.PCT / JP90 / 01030 Sec。 371日期：1992年5月5日 102（e）日期1992年5月5日PCT提交1990年8月13日PCT公布。出版物WO92 / 03355 日期：1992年3月5日。本发明涉及一种食品包装袋，其特征在于，所述食品包装袋包括由所述袋的外层的至少一部分构成的防水穿孔片部，通过粘合层叠的透湿性防水膜作为内层的作为内层的多孔片部分的内部，形成透湿防水部，以及构成外层部的其余部分的防水片部。此外，如果需要，当在防水片部分的内部的至少一部分上设置吸收性片层时，当将包装的食物加热烹饪时，透湿性的透湿性的功能几乎不受损害，并且通过在烹饪过程中刮擦分布或破裂很少破坏强度弱的透湿防水膜。对于具有底部的吸收性片材的袋子，特别是食物的底部，特别是食物的底部，可以通过食品包装在袋子中的方法获得热烹饪食物，开口完全热封将其放入热水中，或者将袋子在微波炉中加热至蒸汽烹饪，或者通过简单折叠或使用laveI将袋子未密封地密封，并将其在微波炉中加热烹饪以进行加热烹饪。

6. 发明申请

US20100193792A1 LAMINATED FILM MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开
标题翻译：层压膜制造方法，半导体器件制造方法，半导体器件和显示器件
公开(公告)号：US20100193792A1
公开(公告)日：2010-08-05
申请号：US12669762
申请日：2008-07-14
申请人： Toshiaki Miyajima
发明人： Toshiaki Miyajima
IPC分类号： H01L33/16 , H01L21/20 , H01L29/786
CPC分类号： H01L29/78603 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/84 , H01L27/1218 , H01L27/1229 , H01L27/1281 , H01L29/78609
摘要： A production method for a semiconductor film according to the present invention includes: step (a) of forming a first film 103 supported by a substrate 101; step (b) of forming a second film 102 being supported by the substrate and having a lower thermal conductivity than that of the first film 103; step (c) of depositing a semiconductor film 104 in an amorphous state above the first film 103 and the second film 102; and step (d) of irradiating portions of the semiconductor film 104 that are located above the first film 103 and the second film 102 with an energy beam of the same intensity, thereby crystallize the portion of the semiconductor film 104 that is located above the second film 102 and leaving the portion of the semiconductor film 104 that is located above the first film 103 in the amorphous state.
摘要翻译：根据本发明的半导体膜的制造方法包括：形成由基板101支撑的第一膜103的工序（a）步骤（b）形成第二薄膜102，该第二薄膜102由该基片支撑并具有比该第一薄膜103的热导率更低的热导率; 步骤（c）在第一膜103和第二膜102之上沉积非晶状态的半导体膜104; 以及步骤（d），以相同强度的能量束照射位于第一膜103和第二膜102之上的半导体膜104的部分，从而使位于第二膜103上方的半导体膜104的部分结晶膜102并且以位于非晶态的方式离开位于第一膜103之上的半导体膜104的部分。

7. 发明授权

US5229634A Vertical power MOSFET 失效
标题翻译：垂直功率MOSFET
公开(公告)号：US5229634A
公开(公告)日：1993-07-20
申请号：US740131
申请日：1991-08-05
申请人： Minoru Yoshioka , Mitsuo Matsunami , Toshiaki Miyajima , Hideyuki Tsuji
发明人： Minoru Yoshioka , Mitsuo Matsunami , Toshiaki Miyajima , Hideyuki Tsuji
IPC分类号： H01L21/336 , H01L21/74 , H01L29/08 , H01L29/78
CPC分类号： H01L29/66712 , H01L21/74 , H01L29/7802 , H01L29/0847
摘要： vertical power MOSFET which comprises a semiconductive substrate of a first conductivity type serving as drain, an impurity region of a second conductivity type on a part of the surface of the semiconductive substrate, an impurity region of a first conductivity type formed on a part of the surface of the second conductivity type impurity region and serving as source, and a surface portion of a second conductivity type semiconductive substrate between source and drain serving as a channel portion with a gate electrode thereon through an insulating film, so that voltage is applied to the gate electrode to control channel current between source and drain, wherein the first conductivity type semiconductive substrate comprises a low resistivity layer and a high resistivity layer epitaxially formed on the low resistivity layer, and at an interface between the low resistivity layer and the high resistivity layer is provided a convexed portion which projects at least to the high resistivity layer side.

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