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    • 1. 发明授权
    • Early write DRAM architecture with vertically folded bitlines
    • 早期写入具有垂直折叠位线的DRAM架构
    • US06519174B2
    • 2003-02-11
    • US09859145
    • 2001-05-16
    • Toshiaki K. KirihataSang Hoo Dhong
    • Toshiaki K. KirihataSang Hoo Dhong
    • G11C506
    • G11C11/4097
    • A memory cell system for a dynamic random access memory (DRAM) array is disclosed. In an exemplary embodiment of the invention, the system includes a plurality of data storage elements arranged in rows and columns. A plurality of wordlines corresponds to the columns, and a plurality of lower bit lines corresponds to the rows, with each of the plurality of lower bitlines further being associated with a plurality of upper, complementary bitlines thereto. The plurality of upper bitlines are vertically aligned with the plurality of lower bitlines, thereby defining a plurality of vertically folded bitline pairs. Further, a plurality of sense amplifiers are arranged in the rows, with each of said plurality of sense amplifiers having one of said plurality of vertically folded bitline pairs as inputs thereto. When one of the plurality of wordlines is activated, a subset of the rows corresponding to the vertically folded bitline pairs is activated.
    • 公开了一种用于动态随机存取存储器(DRAM)阵列的存储单元系统。 在本发明的示例性实施例中,系统包括以行和列排列的多个数据存储元件。 多个字线对应于列,并且多个下位线对应于行,多个下位线中的每一个还与其上的多个上互补位线相关联。 多个上位线与多个下位线垂直对准,从而限定多个垂直折叠的位线对。 此外,多行读出放大器布置在行中,所述多个读出放大器中的每一个具有所述多个垂直折叠的位线对中的一个作为其输入。 当多个字线中的一个被激活时,对应于垂直折叠的位线对的行的子集被激活。