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    • 1. 发明授权
    • Manufacturing apparatus of magnetoresistance elements
    • 磁阻元件制造装置
    • US07731825B2
    • 2010-06-08
    • US11161981
    • 2005-08-24
    • Toru KitadaNaoki WatanabeShinji TakagiShinji Furukawa
    • Toru KitadaNaoki WatanabeShinji TakagiShinji Furukawa
    • C25B9/00C25B11/00C25B13/00C23C14/00
    • H01L43/12B82Y25/00B82Y40/00C23C14/228C23C14/35H01F41/18H01F41/302
    • A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.
    • 一种具有钉扎磁性层,非磁性中间层和自由磁性层的磁阻元件的制造方法,所述方法包括在压力下形成至少一个非磁性中间层和自由磁性层的薄膜 在使用溅射装置的基板附近为8.0×10 -3 Pa以下。 该装置包括:真空室,其中布置有阴极和基板保持器;第一排气装置,连接到真空室的排气口;气体导入机构,用于将气体引向目标;第一压力调节器, 目标空间与目标空间外的中心空间之间的压力差,使中心空间与基板空间之间产生压力差的第二压力调节器,以及排出中心空间的第二排气装置。