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    • 2. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US08815048B2
    • 2014-08-26
    • US11853231
    • 2007-09-11
    • Masahiro MiyagiMasanobu SatoHiroyuki Araki
    • Masahiro MiyagiMasanobu SatoHiroyuki Araki
    • H01L21/461B08B3/04
    • H01L21/67051
    • A substrate processing apparatus has a cup part for receiving processing liquid which is applied from a processing liquid applying part and is splashed from a substrate, and the cup part is formed of electrical insulation material. Hydrophilic treatment is performed on an outer annular surface of the cup part and water is held on the outer annular surface of the cup part while processing the substrate. With this structure, charged potential of the cup part generated in splashing of pure water can be suppressed by the water held on the outer annular surface, without greatly increasing the manufacturing cost of the substrate processing apparatus by forming the cup part with special conductive material. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.
    • 基板处理装置具有用于接收从处理液施加部施加并从基板溅出的处理液的杯部,杯部由电绝缘材料形成。 在杯部的外环形表面上进行亲水处理,并且在处理基板的同时将水保持在杯部的外环形表面上。 通过这种结构,通过保持在外环形表面上的水可以抑制在纯水溅出中产生的杯部分的带电电位,而不会通过用特殊导电材料形成杯部而大大增加基板处理装置的制造成本。 结果,可以在将处理液施加到基板上时防止由于基板的感应充电而在基板上发生放电。
    • 5. 发明授权
    • Substrate drying apparatus and substrate processing apparatus
    • 基板干燥装置和基板处理装置
    • US06354311B1
    • 2002-03-12
    • US09522205
    • 2000-03-09
    • Masahiro KimuraHiroyuki Araki
    • Masahiro KimuraHiroyuki Araki
    • B08B704
    • H01L21/67034H01L21/67028Y10S134/902
    • A deionized water temperature control part cools deionized water which is supplied from a deionized water supply source into a processing bath through a pipe after completely cleaning a substrate in the processing bath for maintaining the deionized water at a constant temperature which is lower than the ordinary temperature. A supply port of an IPA.N2 supply part provided in a casing of a multi-functional processing part is directed upward, thereby supplying IPA vapor upward with carrier gas of N2 for forming an atmosphere containing IPA vapor in high concentration above the processing bath. Thus, the substrate cooled to a low temperature is dried in the atmosphere containing the IPA vapor of the ordinary temperature in the upper portion of the processing bath when pulled up from the processing bath. Thus, the amount of the IPA vapor dissolved in the deionized water stored in the processing bath may be small, whereby consumption of the IPA vapor as well as generation of particles can be suppressed.
    • 去离子水温度控制部件在去离子水中冷却去离子水,所述去离子水在完全清洁处理槽中的基底之后通过管道从加工槽中提供到处理槽中,以将去离子水保持在低于常温的恒定温度 。 设置在多功能处理部件的壳体中的IPA.N2供给部的供给口朝向上方,从而向N 2的载气向上供给IPA蒸气,以形成含有高浓度的IPA蒸汽的气氛,高于处理槽。 因此,在从处理槽拉出时,在含有处理槽上部的常温的IPA蒸气的气氛中冷却到低温的基板被干燥。 因此,溶解在处理槽中的去离子水中的IPA蒸气的量可能较小,从而可以抑制IPA蒸气的消耗以及颗粒的产生。
    • 6. 发明授权
    • Substrate treating apparatus and substrate treating method
    • 基板处理装置及基板处理方法
    • US06352083B1
    • 2002-03-05
    • US09195190
    • 1998-11-17
    • Hiroyuki ArakiKenichiro AraiMasaaki Yabuta
    • Hiroyuki ArakiKenichiro AraiMasaaki Yabuta
    • B08B300
    • H01L21/67057B08B3/102H01L21/67051
    • A control unit controls a lifter to raise at least part of each of a group of substrates above the liquid level of a treating liquid in a treating bath. Thereafter, a valve is opened to drain the treating liquid from the treating bath at a high speed. As a result, a physical force to tilt and adhere an upper portion of the adjacent substrates accompanied by lowering of the liquid level of the treating liquid due to the high speed drainage acts upon a lower portion of the substrates near the lowered liquid level of the treating liquid, thereby reducing the physical force exerted on the substrates. This arrangement, even if a holding interval between the substrates is narrowed at a half of a normal pitch, eliminates a contact of the adjacent substrates and prevents damage of the substrates due to the contact without providing an additional member such as a substrate support guide in the treating bath.
    • 控制单元控制升降器,以将处理液中的处理液的液面以上的一组基板中的每一个的至少一部分升高。 此后,打开阀门以高速排出处理液。 结果,伴随着由于高速排水引起的处理液的液面的降低而倾斜并附着相邻基板的上部的物理力作用在基板的较低部分附近, 从而减少施加在基板上的物理力。 这种布置,即使基板之间的保持间隔在正常间距的一半处变窄,消除了相邻基板的接触,并且防止了由于接触而导致的基板的损坏,而没有提供诸如基板支撑引导件的附加构件 治疗浴。
    • 8. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US07549428B2
    • 2009-06-23
    • US11190620
    • 2005-07-27
    • Hiroshi MasudaHiroyuki Araki
    • Hiroshi MasudaHiroyuki Araki
    • B08B3/04
    • H01L21/67057Y10S134/902
    • A substrate processing apparatus includes a photosensor for detecting the presence/absence of a substrate in each place within a carrier cassette, a pair of processing tanks for performing the same process at the same time, and a supply mechanism for supplying a processing solution to the processing tanks independently. The number of substrates is detected in accordance with the result of the detection of the photosensor. If the number of substrates detected is not greater than an allowable number for one of the processing tanks, the processing solution is supplied to only the one processing tank to perform the process. This reduces the consumption of the processing solution in a batch process.
    • 基板处理装置包括用于检测载体盒内的各处的基板的有无的光传感器,用于同时执行相同处理的一对处理槽,以及用于将处理液提供给 处理罐独立。 根据光电传感器的检测结果检测基板的数量。 如果检测到的基板的数量不大于其中一个处理槽的允许数量,则处理溶液仅提供给一个处理槽以执行处理。 这减少了批处理中处理溶液的消耗。