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    • 1. 发明授权
    • Substrate treating apparatus and substrate treating method
    • 基板处理装置及基板处理方法
    • US06352083B1
    • 2002-03-05
    • US09195190
    • 1998-11-17
    • Hiroyuki ArakiKenichiro AraiMasaaki Yabuta
    • Hiroyuki ArakiKenichiro AraiMasaaki Yabuta
    • B08B300
    • H01L21/67057B08B3/102H01L21/67051
    • A control unit controls a lifter to raise at least part of each of a group of substrates above the liquid level of a treating liquid in a treating bath. Thereafter, a valve is opened to drain the treating liquid from the treating bath at a high speed. As a result, a physical force to tilt and adhere an upper portion of the adjacent substrates accompanied by lowering of the liquid level of the treating liquid due to the high speed drainage acts upon a lower portion of the substrates near the lowered liquid level of the treating liquid, thereby reducing the physical force exerted on the substrates. This arrangement, even if a holding interval between the substrates is narrowed at a half of a normal pitch, eliminates a contact of the adjacent substrates and prevents damage of the substrates due to the contact without providing an additional member such as a substrate support guide in the treating bath.
    • 控制单元控制升降器,以将处理液中的处理液的液面以上的一组基板中的每一个的至少一部分升高。 此后,打开阀门以高速排出处理液。 结果,伴随着由于高速排水引起的处理液的液面的降低而倾斜并附着相邻基板的上部的物理力作用在基板的较低部分附近, 从而减少施加在基板上的物理力。 这种布置,即使基板之间的保持间隔在正常间距的一半处变窄,消除了相邻基板的接触,并且防止了由于接触而导致的基板的损坏,而没有提供诸如基板支撑引导件的附加构件 治疗浴。