会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of manufacturing a field effect transistor with a T-shaped gate
electrode and reduced capacitance
    • 制造具有T形栅电极和降低电容​​的场效应晶体管的方法
    • US5358885A
    • 1994-10-25
    • US46811
    • 1993-04-16
    • Tomoki OkuMasayuki SakaiYasutaka Kohno
    • Tomoki OkuMasayuki SakaiYasutaka Kohno
    • H01L21/285H01L21/335H01L29/423H01L21/44
    • H01L29/66462H01L21/28587H01L29/42316Y10S148/10Y10S148/139Y10S438/951
    • A method of producing a field effect transistor includes depositing a first insulating film and a refractory metal on a semiconductor substrate, forming a first aperture penetrating the first insulating film and the refractory metal film to provide a gate electrode production region, depositing a second insulating film on the refractory metal film, etching the second insulating film in a direction perpendicular to the surface of the substrate leaving portions of the second insulating film on opposite side walls of the first aperture to form a second aperture, defining a gate length, depositing a gate metal, and patterning the gate metal layer, the first insulating film, and the refractory metal film in a prescribed width to form a T-shaped gate structure. During etching the second insulating film, since the refractory metal film serves as a etch stopping layer, the first insulating film is not etched and its thickness remains as deposited. Therefore, the space between the over-hanging portion of the T-shaped gate electrode and the source electrode increases and the gate-to-source capacitance is reduced.
    • 制造场效应晶体管的方法包括在半导体衬底上沉积第一绝缘膜和难熔金属,形成穿透第一绝缘膜的第一孔和难熔金属膜以提供栅电极生产区,沉积第二绝缘膜 在所述难熔金属膜上,在垂直于所述基板的表面的方向上蚀刻所述第二绝缘膜,从而将所述第二绝缘膜的部分留在所述第一孔的相对侧壁上,以形成限定栅极长度的第二孔, 金属,并以规定的宽度图案化栅极金属层,第一绝缘膜和难熔金属膜,以形成T形栅极结构。 在蚀刻第二绝缘膜期间,由于难熔金属膜用作蚀刻停止层,所以第一绝缘膜不被蚀刻并且其厚度保持沉积。 因此,T形栅电极的过悬挂部分与源电极之间的空间增加,并且栅极 - 源极电容减小。
    • 8. 发明授权
    • Method for producing a pellet from a fiber-filled resin composition and injection-molded products thereof
    • 从纤维填充树脂组合物及其注射成型体制造颗粒的方法
    • US07641833B2
    • 2010-01-05
    • US10594679
    • 2005-04-12
    • Kei AokiMasayuki SakaiKazufumi Watanabe
    • Kei AokiMasayuki SakaiKazufumi Watanabe
    • B29C47/60B29B7/24
    • B29B9/14B29B7/90B29C47/1081B29C47/6025B29C47/6031B29C47/6037B29C47/6056B29C2947/9218B29C2947/92704
    • An object of the present invention is to economically produce a resin composition pellet with the degradation of resin suppressed, by using an ordinary extruder, the resin composition pellet being filled with a desired filling amount of a uniformly compounded fibrous filler, and having a required weight average fiber length, in particular, to produce a resin composition pellet used for a socket of a planar socket pin in which the pitch interval of a lattice area of a semiconductor device is 2.0 mm or less, the thickness of the lattice area is 0.5 mm or less, and the height of the socket is 5.0 mm or less. To achieve the object, in supplying 80 to 55% by weight of resin and 20 to 45% by weight of the fibrous filler with a weight average fiber length of 1 mm or more to an extruder to produce a resin composition pellet in which a weight average fiber length of a fibrous filler is 180 to 360 μm, a part of an amount (x) of the resin is supplied through a main feed port of the extruder, and the fibrous filler and a remaining amount (1−x) of the resin are supplied through a side-feed port so that x/(1−x) becomes 50/50 to 10/90% by weight.
    • 本发明的目的是通过使用普通的挤出机经济地生产树脂降解降解的树脂组合物颗粒,所述树脂组合物颗粒填充有所需的填充量的均匀复合的纤维填料并具有所需的重量 平均纤维长度,特别是为了制造用于平面插座销的插座的树脂组合物颗粒,其中半导体器件的晶格面积的间距间隔为2.0mm或更小,晶格面积的厚度为0.5mm 以下,插座的高度为5.0mm以下。 为了达到上述目的,向挤出机中供给80〜55重量%的树脂和20〜45重量%的重均纤维长度为1mm以上的纤维填料,制成树脂组合物颗粒,其中重量 纤维填料的平均纤维长度为180〜360μm,树脂的量(x)的一部分通过挤出机的主供料口供给,纤维填料的剩余量(1-x) 树脂通过侧进料口供给,使得x /(1-x)成为50/50至10/90重量%。