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1. 发明授权

US5389801A Semiconductor device having increased current capacity 失效
标题翻译：具有增加的电流容量的半导体器件
公开(公告)号：US5389801A
公开(公告)日：1995-02-14
申请号：US972290
申请日：1992-11-05
申请人： Tomohide Terashima , Gourab Majumdar
发明人： Tomohide Terashima , Gourab Majumdar
IPC分类号： H01L29/78 , H01L21/332 , H01L21/336 , H01L29/06 , H01L29/74 , H01L29/749 , H01L23/58 , H01L27/01 , H01L31/111
CPC分类号： H01L29/66378 , H01L29/0649 , H01L29/7455 , H01L29/749
摘要： A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3b and 3c, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al-Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a, p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.
摘要翻译：本发明的一般目的是使最大可控电流大，而不会对其它特性产生不利影响。在p +衬底1上形成的n层2的表面中，由n +扩散区域4a，4b和氧化膜9隔开形成p扩散区域3a，3b和3c。在p扩散区域3b和3c上方，电极5a和5b通过氧化膜6与周围形成绝缘.Al-Si电极7与p扩散区域3a和n +扩散区域4a接触，而金属电极8与p +衬底1接触通过插入氧化膜9，防止由n +扩散区域4a，p扩散区域3a，n-层2和p +衬底1组成的晶闸管被致动。

2. 发明授权

US5200638A A semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same 失效
标题翻译：用于提取用于监视低电压岛屿的高电压电压的信号的半导体器件及其制造方法
公开(公告)号：US5200638A
公开(公告)日：1993-04-06
申请号：US547243
申请日：1990-07-03
申请人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
发明人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
IPC分类号： H01L29/73 , H01L21/331 , H01L21/336 , H01L21/66 , H01L29/06 , H01L29/40 , H01L29/732 , H01L29/735 , H01L29/739 , H01L29/745 , H01L29/78 , H01L29/861
CPC分类号： H01L29/404 , H01L29/66681 , H01L29/735 , H01L29/7393 , H01L29/7455 , H01L29/7826 , H01L29/8611
摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

3. 发明授权

US5460981A Semiconductor device having increased current capacity 失效
标题翻译：具有增加的电流容量的半导体器件
公开(公告)号：US5460981A
公开(公告)日：1995-10-24
申请号：US319520
申请日：1994-10-07
申请人： Tomohide Terashima , Gourab Majumdar
发明人： Tomohide Terashima , Gourab Majumdar
IPC分类号： H01L29/78 , H01L21/332 , H01L21/336 , H01L29/06 , H01L29/74 , H01L29/749
CPC分类号： H01L29/66378 , H01L29/0649 , H01L29/7455 , H01L29/749
摘要： A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3a and 3b, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al--Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a , p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.
摘要翻译：本发明的一般目的是使最大可控电流大，而不会对其它特性产生不利影响。在p +衬底1上形成的n层2的表面中，由n +扩散区域4a，4b和氧化膜9隔开形成p扩散区域3a，3b和3c。在p扩散区域3a和3b上方，电极5a和5b通过氧化膜6与周围形成绝缘.Al-Si电极7与p扩散区域3a和n +扩散区域4a接触，而金属电极8与p +衬底1接触通过插入氧化膜9，防止由n +扩散区域4a，p扩散区域3a，n-层2和p +衬底1组成的晶闸管被致动。

4. 发明授权

US5279977A Method of manufacturing a semiconductor device for extracting a signal used to monitor potential of a high voltage island 失效
标题翻译：制造用于提取用于监测高电压岛的电位的信号的半导体器件的方法
公开(公告)号：US5279977A
公开(公告)日：1994-01-18
申请号：US997924
申请日：1992-12-29
申请人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
发明人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
IPC分类号： H01L29/73 , H01L21/331 , H01L21/336 , H01L21/66 , H01L29/06 , H01L29/40 , H01L29/732 , H01L29/735 , H01L29/739 , H01L29/745 , H01L29/78 , H01L29/861 , H01L21/265
CPC分类号： H01L29/404 , H01L29/66681 , H01L29/735 , H01L29/7393 , H01L29/7455 , H01L29/7826 , H01L29/8611
摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.
摘要翻译：在p-衬底上，n型外延层由p阱包围和隔离。在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

5. 发明授权

US5258641A Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same 失效
标题翻译：用于提取用于监测低电压岛上的高电压岛的电位的信号的半导体装置及其制造方法
公开(公告)号：US5258641A
公开(公告)日：1993-11-02
申请号：US944074
申请日：1992-09-11
申请人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
发明人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
IPC分类号： H01L21/336 , H01L29/06 , H01L29/40 , H01L29/735 , H01L29/739 , H01L29/745 , H01L29/78 , H01L29/861 , H01L29/68
CPC分类号： H01L29/404 , H01L29/66681 , H01L29/735 , H01L29/7393 , H01L29/7455 , H01L29/7826 , H01L29/8611
摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.
摘要翻译：在p-衬底上，n型外延层由p阱包围和隔离。在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

6. 发明授权

US06643155B2 Power semiconductor device, power arm and inverter circuit 失效
标题翻译：功率半导体器件，电源臂及逆变电路
公开(公告)号：US06643155B2
公开(公告)日：2003-11-04
申请号：US09880919
申请日：2001-06-15
申请人： Gourab Majumdar , Shinji Hatae
发明人： Gourab Majumdar , Shinji Hatae
IPC分类号： H02M75387
CPC分类号： H02M7/003
摘要： It is an object of the present invention to provide an inverter circuit including a power arm ensuring a high breakdown voltage and having low probability of malfunction. In a power arm element consisting of a switching element and a diode connected in inverse-parallel connection thereto, n free wheeling diodes (n≧2) connected in series are connected in inverse-parallel connection to a switching element (1b). A breakdown voltage between an anode and a cathode of each free wheeling diode is defined to be 1/n of a breakdown voltage of the switching element (1b). That is, the breakdown voltage of each free wheeling diode is reduced to 1/n to reduce a thickness of a n− drift region. A transient voltage characteristic during flow of a free wheeling current can be thereby kept low. The drop in the breakdown voltage is compensated with the n free wheeling diodes connected in series, to thereby ensure breakdown voltage of a degree approximately the same as that of the switching element.
摘要翻译：本发明的目的是提供一种包括确保高击穿电压并且故障概率低的电源臂的逆变器电路。在由开关元件和与其并联连接的二极管组成的功率臂元件中，串联连接的n个续流二极管（n> = 2）与开关元件（1b）反并联连接。每个续流二极管的阳极和阴极之间的击穿电压被定义为开关元件（1b）的击穿电压的1 / n。也就是说，每个续流二极管的击穿电压降低到1 / n，以减小n漂移区域的厚度。因此，可以保持在续流电流的流动期间的瞬时电压特性。通过串联连接的n个续流二极管来补偿击穿电压的下降，从而确保与开关元件大致相同程度的击穿电压。

7. 外观设计

USD421969S Semiconductor device 失效
公开(公告)号：USD421969S
公开(公告)日：2000-03-28
申请号：US100732
申请日：1999-02-17
申请人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara
设计人： Hisashi Kawafuji , Mitsutaka Iwasaki , Gourab Majumdar , Toshiaki Shinohara

8. 发明授权

US5703399A Semiconductor power module 失效
标题翻译：半导体电源模块
公开(公告)号：US5703399A
公开(公告)日：1997-12-30
申请号：US648432
申请日：1996-05-15
申请人： Gourab Majumdar , Tooru Iwagami , Sukehisa Noda
发明人： Gourab Majumdar , Tooru Iwagami , Sukehisa Noda
IPC分类号： H01L23/12 , H01L21/56 , H01L23/36 , H01L23/433 , H01L23/495 , H01L23/50 , H01L23/52 , H01L25/04 , H01L25/07 , H01L25/18 , H01L23/34
CPC分类号： H01L25/072 , H01L21/565 , H01L23/4334 , H01L23/49575 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2924/01079 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/3025
摘要： A blanked lead frame serves both as an interconnection pattern for a control circuit and a power circuit and as external terminals. Highly heat conducting resin having an electric insulating property is put between the lead frame and the heat sink arranged to face each other to maintain good thermal conductivity therebetween. The heat sink and the lead frame are coupled easily and fixedly by performing a simple process of sealing with the highly heat conducting resin. Accordingly, no expensive circuit boards are required, which have been necessary in conventional devices, nor a process of patterning the interconnection pattern and a process of connecting the external terminals to the interconnection pattern when manufacturing the device required. That is to say, the manufacturing cost is reduced without deteriorating the heat radiating characteristic.
摘要翻译：消隐引线框架既用作控制电路，电源电路和外部端子的互连图案。具有电绝缘性的高导热性树脂被放置在彼此面对的引线框架和散热器之间以保持良好的导热性。通过对高导热性树脂进行简单的密封处理，散热器和引线框架容易固定地连接。因此，在制造所需要的装置时，在常规装置中不需要昂贵的电路板，也不需要对互连图案进行图案化处理和将外部端子连接到互连图案的处理。也就是说，制造成本降低而不会降低散热特性。

9. 发明授权

US4903106A Semiconductor power device integrated with temperature protection means 失效
标题翻译：半导体功率器件集成了温度保护装置
公开(公告)号：US4903106A
公开(公告)日：1990-02-20
申请号：US202469
申请日：1988-06-06
申请人： Masanori Fukunaga , Gourab Majumdar
发明人： Masanori Fukunaga , Gourab Majumdar
IPC分类号： H01L27/02 , H01L27/04 , H01L29/08 , H01L29/10 , H01L29/78 , H02H5/04 , H03K17/14
CPC分类号： H01L29/7803 , H01L27/0211 , H01L29/1008 , H01L29/1033 , H01L29/1079 , H02H5/044 , H03K17/145 , H01L29/0878 , H01L29/0886 , H01L29/1095
摘要： The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there is no need to add an external temperature sensor, whereby the device can be reduced in size. Further, an abnormal temperature of the power device is accurately detected by the temperature detecting device, whereby thermal breakdown of the power device is reliably prevented.
摘要翻译：本发明涉及用于大功率使用的半导体器件及其制造方法。根据本发明，在具有动力装置的同一基板上形成温度检测装置。因此，不需要添加外部温度传感器，由此可以减小装置的尺寸。此外，通过温度检测装置精确地检测功率器件的异常温度，从而可靠地防止功率器件的热击穿。

10. 发明授权

US4880995A Electrically isolated MOSFET drive circuit 失效
标题翻译：电隔离MOSFET驱动电路
公开(公告)号：US4880995A
公开(公告)日：1989-11-14
申请号：US233855
申请日：1988-08-18
申请人： Satoshi Mori , Gourab Majumdar
发明人： Satoshi Mori , Gourab Majumdar
IPC分类号： H03K17/0412 , H03K17/567 , H03K17/60
CPC分类号： H03K17/04126 , H03K17/567
摘要： A driver circuit for driving a switching element in response to a driving signal from a driving signal generator includes an electrical isolation circuit for generating an electrically isolated signal from the driving signal in response to the driving signal; a first signal generator which receives the electrically isolated signal, and generates a first signal which level-changes from a second level to a third level in response to the level change of the electrically isolated signal from a first level to the second level; a second signal generator which receives the electrically isolated signal, and generates a second signal synchronous with the electrically isolated signal; a third signal generator which receives the signal from the first signal generator, and generates a third signal synchronous with the first signal; a fourth signal generator which receives the signals from the second and the third signal generators, and generates a fourth signal having a signal level equal to the sum of the second and the third signal levels, the generator including a metal oxide semiconductor field effect transistor.
摘要翻译：用于响应于来自驱动信号发生器的驱动信号驱动开关元件的驱动器电路包括电隔离电路，用于响应驱动信号从驱动信号产生电隔离信号; 第一信号发生器，其接收电隔离信号，并且响应于电隔离信号从第一电平到第二电平的电平变化而产生电平从第二电平变化到第三电平的第一信号; 第二信号发生器，其接收所述电隔离信号，并产生与所述电隔离信号同步的第二信号; 第三信号发生器，其接收来自第一信号发生器的信号，并产生与第一信号同步的第三信号; 第四信号发生器，其接收来自第二和第三信号发生器的信号，并产生具有等于第二和第三信号电平之和的信号电平的第四信号，发生器包括金属氧化物半导体场效应晶体管。

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