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    • 3. 发明授权
    • Thin film electroluminescent element
    • 薄膜电致发光元件
    • US4547703A
    • 1985-10-15
    • US576394
    • 1984-01-26
    • Yosuke FujitaTakao TohdaTomizo MatsuokaAtsushi AbeTsuneharu Nitta
    • Yosuke FujitaTakao TohdaTomizo MatsuokaAtsushi AbeTsuneharu Nitta
    • H01B3/12H05B33/22H05B33/12
    • H05B33/22H01B3/12Y10S428/917
    • In a thin film electroluminescent element comprising a phosphor thin film, a dielectric thin film disposed on at least one of the surfaces of the phosphor thin film and electrodes for applying a voltage across the thin films, the aforementioned dielectric thin film is formed of a dielectric material expressed by a general formula of AB.sub.2 O.sub.6 (where A represents a divalent metal element and B represents a pentavalent metal element). By employing the dielectric material, the voltage for driving a thin film electroluminescent element can be lowered without decreasing the brightness of the element. Further, by using a composite dielectric thin film in which the dielectric thin film expressed by the aforementioned general formula AB.sub.2 O.sub.6 is laminated with a dielectric thin film which is not susceptible to dielectric breakdown of self-healing type, the composite dielectric thin film is made susceptible to the dielectric breakdown of self-healing type. Additionally, the value of product of the dielectric breakdown field intensity and dielectric constant is increased to obtain a thin film electroluminescent element having excellent characteristics.
    • PCT No.PCT / JP83 / 00164 Sec。 371日期1984年1月26日 102(e)日期1984年1月26日PCT提交1983年5月26日PCT公布。 出版物WO83 / 04339 日本1983年12月8日。在包括荧光体薄膜的薄膜电致发光元件中,设置在荧光体薄膜的至少一个表面上的电介质薄膜和用于在薄膜上施加电压的电极,上述电介质 由通式AB 2 O 6(其中A表示二价金属元素,B表示五价金属元素)表示的电介质材料形成薄膜。 通过使用介电材料,可以降低用于驱动薄膜电致发光元件的电压而不降低元件的亮度。 此外,通过使用其中由上述通式AB 2 O 6表示的电介质薄膜与不易受自愈型电介质击穿的电介质薄膜层压的复合电介质薄膜,使复合电介质薄膜变得易受影响 对自愈型的介电击穿。 此外,提高介电击穿场强和介电常数的乘积值以获得具有优异特性的薄膜电致发光元件。
    • 6. 发明授权
    • Electroluminescent display device
    • 电致发光显示装置
    • US4634934A
    • 1987-01-06
    • US572415
    • 1984-01-18
    • Takao TohdaTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • Takao TohdaTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • G09F9/33H05B33/22H05B37/00
    • H05B33/22G09F9/33
    • Electroluminescent display device suitable for ac and unipolar pulse voltage operation, and ensuring an increased luminescent brightness and a low driving voltage, comprises a transparent electrically insulating substrate; an electroluminescent layer comprised of zinc sulfide (ZnS) and at least one luminescingly active material; an electrically insulating layer formed on one surface of said electroluminescent layer; and first and second energizing means for applying signal voltages across said electroluminescent layer and said insulating layer corresponding to information to be displayed, wherein said first energizing means is interposed between said transparent substrate and said electroluminescent layer, and includes at least one semiconductive electrode which contacts said electroluminescent layer and is comprised of a semiconductive material containing at least one chemical compound selected from the group consisting of the chemical compounds of Groups II-VI, and wherein said second energizing means is arranged on said insulating layer on the surface thereof opposite said electroluminescent layer.
    • PCT No.PCT / JP83 / 00146 Sec。 371日期1984年1月18日 102(e)日期1984年1月18日PCT提交1983年5月18日PCT公布。 公开号WO83 / 04123 日期:1983年11月24日。适用于交流和单极脉冲电压操作,确保增加发光亮度和低驱动电压的电致发光显示装置,包括透明电绝缘基板; 由硫化锌(ZnS)和至少一种发光活性物质组成的电致发光层; 形成在所述电致发光层的一个表面上的电绝缘层; 以及第一和第二激励装置,用于跨所述电致发光层和所述绝缘层跨越待显示的信息施加信号电压,其中所述第一激励装置介于所述透明基板和所述电致发光层之间,并且包括至少一个半导体电极, 所述电致发光层由包含至少一种选自II-VI族化合物的化合物的半导体材料组成,并且其中所述第二激发装置设置在与所述电致发光相反的表面上的所述绝缘层上 层。
    • 7. 发明授权
    • Thin-film electroluminescent element
    • 薄膜电致发光元件
    • US4613546A
    • 1986-09-23
    • US678406
    • 1984-12-05
    • Jun KuwataTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • Jun KuwataTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • H01B3/12H05B33/12H05B33/22
    • H05B33/22H01B3/12Y10S428/917Y10T428/265
    • The development of a dielectric thin-film which is high (140 MV/cm or above) in product of dielectric constant .epsilon..sub.i and dielectric breakdown field strength E.sub.ib is essential for realizing an EL element which can operate stably at a low voltage. Such dielectric film is also required which can withstand heat treatments at high temperatures above 500.degree. C. and is proof against clouding and in which the electrical breakdown caused by a minute fault produced in the process of film formation is self-healed. A film material which satisfies all of these requirements could be obtained from a TiO.sub.2 -BaO based composition by partially substituting the position of Ti with Sn, Zr or Hf and also partially substituting the position of Ba with Ca or Mg. By using these dielectric films, it is possible to obtain a low-voltage drive thin-film electroluminescent element which are high in production yield and reliability.
    • 在介电常数εi和介电击穿场强Eib的乘积中高(140MV / cm以上)的电介质薄膜的开发对于实现能够在低电压下稳定运行的EL元件是必不可少的。 也需要这样的电介质膜,其能够承受高于500℃的高温下的热处理,并且防止混浊,并且其中由成膜过程中产生的微小故障引起的电击穿是自愈的。 满足所有这些要求的薄膜材料可以通过用Sn,Zr或Hf部分取代Ti的位置并且还用Ca或Mg部分取代Ba的位置,从TiO 2 -BaO基组合物获得。 通过使用这些电介质膜,可以获得高产率和可靠性的低电压驱动薄膜电致发光元件。
    • 9. 发明授权
    • Low-energy-electron-exciting fluorescent display device
    • 低能电子激发荧光显示装置
    • US4314178A
    • 1982-02-02
    • US225323
    • 1981-01-15
    • Tomizo MatsuokaTsuneharu NittaShigeru Hayakawa
    • Tomizo MatsuokaTsuneharu NittaShigeru Hayakawa
    • C09K11/08C01G19/00C09K11/77H01J29/20H01J31/15H01J63/06C09K11/465
    • H01J31/15C09K11/7729H01J63/06
    • A red emission fluorescent display device employing improved SnO.sub.2 :Eu phosphor as a low-energy-electron excitation phosphor. The phosphor is manufactured by the following steps:To a starting material selected from the group consisting of at least one of metallic tin, stannous and stannic halide and stannous sulfate, europium oxide is added in the amount of 5.times.10.sup.-2 to 10 atomic % europium to tin. The mixture is heated and stirred with nitric acid until it becomes dry due to evaporation of the solvent water and unreacted nitric acid, thereby forming a mixed powder of metastannic acid and europium. Then the powder is subjected to heat treatment, causing the metastannic acid to thermally decompose and the europium to diffuse into the stannic oxide matrix.The device exhibts remarkably high luminescence intensity and it is possible to achieve the intensity of 26f.L or more under the E.sub.b of 10 V and the I.sub.b of 1.5 mA/cm.sup.2.
    • 一种使用改进的SnO 2:Eu荧光体作为低能量电子激发荧光体的红色发射荧光显示装置。 荧光体通过以下步骤制造:向选自金属锡,亚锡和锡卤化物和硫酸锡中的至少一种的原料中加入氧化铕,量为5×10 -2至10原子%的铕 锡。 将混合物与硝酸一起加热并搅拌直至由于溶剂水和未反应的硝酸的蒸发而变干,从而形成偏亚氨酸和铕的混合粉末。 然后对粉末进行热处理,导致偏钛酸热分解,铕扩散到锡氧化物基质中。 该器件具有显着高的发光强度,并且可以在10V的Eb和1.5mA / cm 2的Ib下实现26f.L或更高的强度。
    • 10. 发明授权
    • Low-energy-electron-exciting fluorescent display device
    • 低能电子激发荧光显示装置
    • US4314177A
    • 1982-02-02
    • US225322
    • 1981-01-15
    • Tomizo MatsuokaTsuneharu NittaShigeru Hayakawa
    • Tomizo MatsuokaTsuneharu NittaShigeru Hayakawa
    • C09K11/08C01G19/00C09K11/77H01J31/15H01J63/06C09K11/465
    • H01J31/15C09K11/7729H01J63/06
    • A red emission fluorescent display device employing improved SnO.sub.2 :Eu phosphor as a low-energy-electron excitation phosphor. The phosphor is manufactured by the following steps:An aqueous solution of a mixture of europium and at least one material selected from stannous halides and stannous sulfate is prepared. The amount of europium ion is adjusted so that the ratio thereof to tin ions ranges between 5.times.10.sup.-2 and 10 atomic %. The solution is poured into and mixed with a hot aqueous solution including oxalic ions, while the mixed solution is being stirred, to form oxalate coprecipitates of tin and europium. After being dryed the coprecipitate is heated so as to be thermally decomposed and then is subjected to heat treatment at the temperature above that for the thermal decomposition, whereby europium ions are diffused into the stannic oxide matrix.The device exhibits remarkably high luminescence intensity which is satisfactory for practical use.
    • 使用改进的SnO 2:Eu荧光体作为低能量电子激发荧光体的红色发射荧光显示装置。 通过以下步骤制造荧光体:制备铕与选自亚锡卤化物和硫酸亚锡的至少一种材料的混合物的水溶液。 调整铕离子的量使得其与锡离子的比例在5×10 -2至10原子%之间。 将溶液倒入含有草酸离子的热水溶液中混合,同时搅拌混合溶液,形成锡和铕的草酸盐共沉淀物。 干燥后,将共沉淀物加热分解,然后在高于热分解的温度下进行热处理,由此铕离子扩散到锡氧化物基质中。 该装置显示出非常高的发光强度,这对于实际使用是令人满意的。