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    • 2. 发明授权
    • Thin film electroluminescent element
    • 薄膜电致发光元件
    • US4547703A
    • 1985-10-15
    • US576394
    • 1984-01-26
    • Yosuke FujitaTakao TohdaTomizo MatsuokaAtsushi AbeTsuneharu Nitta
    • Yosuke FujitaTakao TohdaTomizo MatsuokaAtsushi AbeTsuneharu Nitta
    • H01B3/12H05B33/22H05B33/12
    • H05B33/22H01B3/12Y10S428/917
    • In a thin film electroluminescent element comprising a phosphor thin film, a dielectric thin film disposed on at least one of the surfaces of the phosphor thin film and electrodes for applying a voltage across the thin films, the aforementioned dielectric thin film is formed of a dielectric material expressed by a general formula of AB.sub.2 O.sub.6 (where A represents a divalent metal element and B represents a pentavalent metal element). By employing the dielectric material, the voltage for driving a thin film electroluminescent element can be lowered without decreasing the brightness of the element. Further, by using a composite dielectric thin film in which the dielectric thin film expressed by the aforementioned general formula AB.sub.2 O.sub.6 is laminated with a dielectric thin film which is not susceptible to dielectric breakdown of self-healing type, the composite dielectric thin film is made susceptible to the dielectric breakdown of self-healing type. Additionally, the value of product of the dielectric breakdown field intensity and dielectric constant is increased to obtain a thin film electroluminescent element having excellent characteristics.
    • PCT No.PCT / JP83 / 00164 Sec。 371日期1984年1月26日 102(e)日期1984年1月26日PCT提交1983年5月26日PCT公布。 出版物WO83 / 04339 日本1983年12月8日。在包括荧光体薄膜的薄膜电致发光元件中,设置在荧光体薄膜的至少一个表面上的电介质薄膜和用于在薄膜上施加电压的电极,上述电介质 由通式AB 2 O 6(其中A表示二价金属元素,B表示五价金属元素)表示的电介质材料形成薄膜。 通过使用介电材料,可以降低用于驱动薄膜电致发光元件的电压而不降低元件的亮度。 此外,通过使用其中由上述通式AB 2 O 6表示的电介质薄膜与不易受自愈型电介质击穿的电介质薄膜层压的复合电介质薄膜,使复合电介质薄膜变得易受影响 对自愈型的介电击穿。 此外,提高介电击穿场强和介电常数的乘积值以获得具有优异特性的薄膜电致发光元件。
    • 4. 发明授权
    • Electroluminescent display device
    • 电致发光显示装置
    • US4634934A
    • 1987-01-06
    • US572415
    • 1984-01-18
    • Takao TohdaTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • Takao TohdaTomizo MatsuokaYosuke FujitaAtsushi AbeTsuneharu Nitta
    • G09F9/33H05B33/22H05B37/00
    • H05B33/22G09F9/33
    • Electroluminescent display device suitable for ac and unipolar pulse voltage operation, and ensuring an increased luminescent brightness and a low driving voltage, comprises a transparent electrically insulating substrate; an electroluminescent layer comprised of zinc sulfide (ZnS) and at least one luminescingly active material; an electrically insulating layer formed on one surface of said electroluminescent layer; and first and second energizing means for applying signal voltages across said electroluminescent layer and said insulating layer corresponding to information to be displayed, wherein said first energizing means is interposed between said transparent substrate and said electroluminescent layer, and includes at least one semiconductive electrode which contacts said electroluminescent layer and is comprised of a semiconductive material containing at least one chemical compound selected from the group consisting of the chemical compounds of Groups II-VI, and wherein said second energizing means is arranged on said insulating layer on the surface thereof opposite said electroluminescent layer.
    • PCT No.PCT / JP83 / 00146 Sec。 371日期1984年1月18日 102(e)日期1984年1月18日PCT提交1983年5月18日PCT公布。 公开号WO83 / 04123 日期:1983年11月24日。适用于交流和单极脉冲电压操作,确保增加发光亮度和低驱动电压的电致发光显示装置,包括透明电绝缘基板; 由硫化锌(ZnS)和至少一种发光活性物质组成的电致发光层; 形成在所述电致发光层的一个表面上的电绝缘层; 以及第一和第二激励装置,用于跨所述电致发光层和所述绝缘层跨越待显示的信息施加信号电压,其中所述第一激励装置介于所述透明基板和所述电致发光层之间,并且包括至少一个半导体电极, 所述电致发光层由包含至少一种选自II-VI族化合物的化合物的半导体材料组成,并且其中所述第二激发装置设置在与所述电致发光相反的表面上的所述绝缘层上 层。
    • 5. 发明授权
    • Thin film electroluminescence display device
    • 薄膜电致发光显示装置
    • US4869973A
    • 1989-09-26
    • US93263
    • 1987-09-04
    • Masahiro NishikawaTakao TohdaJun KuwataYosuke FujitaTomizo MatsuokaAtsushi Abe
    • Masahiro NishikawaTakao TohdaJun KuwataYosuke FujitaTomizo MatsuokaAtsushi Abe
    • H05B33/12H05B33/22
    • H05B33/12H05B33/22Y10S428/917
    • In a thin film EL display device wherein a transparent electrode, a first dielectric layer, an EL emission layer, a second dielectric layer and a back electrode are laminated in order on a transluscent substrate, a 10 nm-200 nm thickness of thin film made of calcium sulfide or a mixture containing calcium sulfide which is formed by an electron beam vapor deposition method provided between the first dielectric layer and the EL emission layer and between the EL emission layer and the second dielectric layer, thereby obtaining a thin film EL display device which maintains a stable operation for a long period even when it is driven by A.C. pulses which are a symmetric with respect to the time relationship of the driving pulses (e.g., the time period between the start of a positive pulse and the start of the subsequent negative pulse is different than the time period between the start of a negative pulse and the start of the subsequent positive pulse) or are different in amplitude in a positive side and a negative side.
    • 在透明电极,第一电介质层,EL发射层,第二电介质层和背面电极依次层叠在平坦化衬底上的薄膜EL显示器件中,制成10nm-200nm厚的薄膜 的硫化钙或含有硫化钙的混合物,其通过设置在第一介电层和EL发射层之间以及EL发射层和第二介电层之间的电子束气相沉积法形成,从而获得薄膜EL显示装置 即使在由驱动脉冲的时间关系对称的交流脉冲(例如,正脉冲的开始与后续的开始之间的时间段)驱动的情况下,也能够长时间保持稳定的动作 负脉冲与负脉冲的开始与后续的正脉冲的开始之间的时间段不同)或在posi中的幅度不同 积极面和负面。
    • 10. 发明授权
    • Electron-emitting device
    • 电子发射器件
    • US06350999B1
    • 2002-02-26
    • US09449525
    • 1999-11-29
    • Takeshi UenoyamaTakao TohdaMasahiro DeguchiMakoto KitabatakeKentaro Setsune
    • Takeshi UenoyamaTakao TohdaMasahiro DeguchiMakoto KitabatakeKentaro Setsune
    • H01L310328
    • H01J1/308
    • In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
    • 在电子发射器件中,用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂(本征)Al x Ga 1-x N(0 <= x <= 1)组成。 表面层由具有负电子亲和力(NEA)的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙,接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V,则Al x Ga 1-x N的带被弯曲,主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。