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1. 发明授权

US6090666A Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal 失效
标题翻译：使用半导体纳米晶体制造半导体纳米晶体和半导体存储器件的方法
公开(公告)号：US6090666A
公开(公告)日：2000-07-18
申请号：US163552
申请日：1998-09-30
申请人： Tohru Ueda , Kenta Nakamura , Yasumori Fukushima
发明人： Tohru Ueda , Kenta Nakamura , Yasumori Fukushima
IPC分类号： H01L21/8247 , G11C16/10 , H01L21/20 , H01L21/205 , H01L27/115 , H01L29/06 , H01L29/66 , H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L21/02381 , B82Y10/00 , G11C16/10 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/02601 , H01L21/0262 , H01L21/02667 , H01L29/7888 , G11C2216/06
摘要： There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of a insulating film between nanocrystals and channel region to be easily controlled and involves less variations in characteristics such as threshold and programming performance, and which is fast reprogrammable and has nonvolatility. Under a low pressure below atmospheric pressure, an amorphous silicon thin film 3 is deposited on a tunnel insulating film 2 formed on a silicon substrate 1. After the deposition of the amorphous silicon thin film 3, the amorphous silicon thin film 3 is heat treated at a temperature not lower than the deposition temperature of the amorphous silicon thin film 3 in an atmosphere of helium gas having no oxidizability, by which a plurality of spherical nanocrystals 4 with a diameter of 18 nm or less are formed on the tunnel insulating film 2 so as to be spaced from one another. The plurality of nanocrystals 4 are used as the floating gate of a semiconductor memory device.
摘要翻译：提供了一种用于制造高度可控且密度和尺寸变化不大的半导体纳米晶体的方法，以及半导体存储器件，其使用半导体纳米晶体允许纳米晶体和沟道区之间的绝缘膜的厚度易于控制，并且在诸如阈值和编程性能之类的特性方面的变化较小，并且其是快速可重新编程且具有非易失性的。在低于大气压的低压下，在形成在硅衬底1上的隧道绝缘膜2上沉积非晶硅薄膜3.在沉积非晶硅薄膜3之后，非晶硅薄膜3被热处理因此，在隧道绝缘膜2上形成直径为18nm以下的多个球状纳米晶体4，在不具有氧化性的氦气的气氛中，不低于非晶硅薄膜3的沉积温度的温度以便彼此间隔开。多个纳米晶体4用作半导体存储器件的浮置栅极。

2. 发明授权

US6013922A Semiconductor storage element having a channel region formed of an aggregate of spherical grains and a method of manufacturing the same 失效
标题翻译：具有由球形颗粒的聚集体形成的沟道区的半导体存储元件及其制造方法
公开(公告)号：US6013922A
公开(公告)日：2000-01-11
申请号：US85020
申请日：1998-05-28
申请人： Tohru Ueda , Kenta Nakamura , Yasumori Fukushima
发明人： Tohru Ueda , Kenta Nakamura , Yasumori Fukushima
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/10 , H01L29/66 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/167 , H01L29/207 , H01L29/227
CPC分类号： H01L21/2022 , B82Y10/00 , H01L29/66757 , H01L29/7888 , H01L28/84
摘要： A semiconductor storage element has a source region, a drain region, and a channel region connecting the source region with the drain region, which each are formed on an insulation film of a substrate. A gate insulation film is formed between the channel region and a gate electrode. The source region, the drain region, and the channel region consist of an aggregate of spherical grains which are arranged two-dimensionally on the insulation film and connected with one another such that the adjacent spherical grains are conductive to one another. The channel region contains at least one carrier trap region provided at a location other than an electric path thereof.
摘要翻译：半导体存储元件具有源极区域，漏极区域和连接源极区域与漏极区域的沟道区域，其各自形成在衬底的绝缘膜上。在沟道区和栅电极之间形成栅极绝缘膜。源极区域，漏极区域和沟道区域由二维地布置在绝缘膜上并且彼此连接使得相邻的球形颗粒彼此导电的球形颗粒聚集体组成。沟道区域包含至少一个载流子陷阱区域，该区域设置在除电路以外的位置。

3. 发明授权

US06310376B1 Semiconductor storage device capable of improving controllability of density and size of floating gate 失效
标题翻译：能够提高浮栅的密度和尺寸的可控性的半导体存储装置
公开(公告)号：US06310376B1
公开(公告)日：2001-10-30
申请号：US09165800
申请日：1998-10-02
申请人： Tohru Ueda , Kenta Nakamura , Yasumori Fukushima
发明人： Tohru Ueda , Kenta Nakamura , Yasumori Fukushima
IPC分类号： H01L29788
CPC分类号： B82Y10/00 , H01L29/7883 , H01L29/7887 , H01L29/7888
摘要： There is provided is a semiconductor storage device that can reduce a dispersion in characteristics such as a threshold voltage and a writing performance and has a low consumption power and a non-volatility. There are included a source region 9 and a drain region 10 formed on a silicon substrate 1, a channel region 3a located between the source and drain regions 9 and 10, a gate electrode 8 that is formed above the channel region 3a and controls a channel current flowing through the channel region 3a, and a control gate insulating film 7, a floating gate 6 and a tunnel insulating film 4 that are arranged in order from the gate electrode 8 side between the channel region 3a and the gate electrode 8. The floating gate 6 is comprised of a plurality of crystal grains 6a linearly discretely arranged substantially parallel to the surface of the channel region 3a.
摘要翻译：提供了可以降低诸如阈值电压和写入性能等特性的色散并具有低消耗功率和非挥发性的半导体存储装置。包括形成在硅衬底1上的源极区9和漏极区10，位于源极和漏极区9和10之间的沟道区3a，形成在沟道区3a上方的栅极8并控制沟道流过沟道区域3a的电流以及从沟道区域3a和栅电极8之间的栅电极8侧依次排列的控制栅绝缘膜7，浮栅6和隧道绝缘膜4。栅极6由基本上平行于沟道区域3a的表面线性离散布置的多个晶粒6a组成。

4. 发明授权

US6103600A Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method 失效
标题翻译：用于形成超细颗粒和/或超细线的方法，以及使用通过成形方法形成的超微粒和/或超细线的半导体器件
公开(公告)号：US6103600A
公开(公告)日：2000-08-15
申请号：US159645
申请日：1998-09-24
申请人： Tohru Ueda , Yasumori Fukushima , Kenta Nakamura
发明人： Tohru Ueda , Yasumori Fukushima , Kenta Nakamura
IPC分类号： H01L21/8247 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/762 , H01L27/10 , H01L29/06 , H01L29/66 , H01L29/76 , H01L29/78 , H01L29/788 , H01L29/792 , H01L33/34 , H01L33/44 , H01L21/00 , H01L21/31 , H01L21/469 , H01L21/84
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02603 , H01L21/0262 , H01L21/28273 , H01L21/76202 , H01L29/7613 , Y10S438/962
摘要： A quantum dot and quantum fine wire forming method is provided which can allow control of the position for crystalline particle growth and enables formation of particles with high uniformity in size and density and with high reproducibility. After an Si substrate is formed with a step by a dry etching method, an SiO.sub.2 film is formed on the surface of the substrate. The interior of a reaction chamber is evacuated to a vacuum of 10.sup.-8 Torr, and then an Si.sub.2 H.sub.6 gas is introduced into the reaction chamber to flow therein so that Si crystal particles (quantum dots) are formed along the step. The step is formed by conventional photolithography and dry etching; therefore, the position for quantum dot growth can be easily controlled. By controlling the rate and time period of gas flow and the temperature of the substrate it is possible to form quantum fine wires, and to control the size of quantum dots and/or thickness of quantum fine wires. In this way, high uniformity in quantum dot and/or quantum fine wire size/thickness and density can be realized with high reproducibility. Further, low cost production, high yield, and high productivity can be achieved without use of any special fine processing technique.
摘要翻译：提供了量子点和量子细线形成方法，其可以控制晶粒生长的位置，并且能够形成尺寸和密度均匀性高的重复性高的颗粒。在通过干蚀刻方法形成Si衬底之后，在衬底的表面上形成SiO 2膜。将反应室的内部抽真空至10-8托的真空，然后将Si 2 H 6气体引入反应室中流动，从而沿着该步骤形成Si晶体颗粒（量子点）。该步骤通过常规光刻和干蚀刻形成; 因此，可以容易地控制量子点生长的位置。通过控制气流的速率和时间以及衬底的温度，可以形成量子细线，并且控制量子细丝的量子点的尺寸和/或厚度。以这种方式，可以以高再现性实现量子点和/或量子细线尺寸/厚度和密度的高均匀性。此外，可以实现低成本生产，高产率和高生产率，而不使用任何特殊的精细加工技术。

5. 发明授权

US07950487B2 Exhaust system for motorcycle and motorcycle including the same 有权
标题翻译：摩托车和摩托车的排气系统包括相同的
公开(公告)号：US07950487B2
公开(公告)日：2011-05-31
申请号：US12275717
申请日：2008-11-21
申请人： Kenta Nakamura , Kazuro Furukawa
发明人： Kenta Nakamura , Kazuro Furukawa
IPC分类号： B62D61/02
CPC分类号： B62K11/04 , F01N13/08 , F01N13/1811 , F01N13/1822 , F01N2450/22 , F01N2450/24 , F01N2470/16
摘要： An exhaust system for a motorcycle includes a bracket which includes a joint portion, an engine support portion, and a swing-arm support portion. The joint portion is configured to be connected to a vehicle-body frame. The engine support portion is configured to support an engine. The swing-arm support portion is provided separately from the joint portion and configured to support a swing arm which is swingable with respect to the vehicle-body frame and at a rear end of which a rear wheel is provided. An exhaust pipe extends rearwards from the engine. A muffler is connected to a rear end of the exhaust pipe and disposed along the swing arm. A muffler is connected to a rear end of the muffler support stay and a front end of which is connected to the bracket separately from the joint portion.
摘要翻译：用于摩托车的排气系统包括：托架，其包括接合部，发动机支撑部和摆臂支撑部。接合部被构造成连接到车体框架。发动机支撑部分构造成支撑发动机。摆臂支撑部分与接合部分开设置，并且构造成支撑能够相对于车体框架摆动的摆臂，并且在其后端设有后轮。排气管从发动机向后延伸。消声器连接到排气管的后端并且沿着摆臂布置。消音器连接到消音器支撑支架的后端，并且其前端与接头部分分开连接到支架。

6. 发明申请

US20060077677A1 Tail lamp structure for vehicles 有权
标题翻译：车尾尾灯结构
公开(公告)号：US20060077677A1
公开(公告)日：2006-04-13
申请号：US11247264
申请日：2005-10-12
申请人： Seiji Yamaguchi , Yoshihiro Takanashi , Kenta Nakamura , Masaru Nakayama
发明人： Seiji Yamaguchi , Yoshihiro Takanashi , Kenta Nakamura , Masaru Nakayama
IPC分类号： B62J6/00
CPC分类号： B62J6/04 , B60Q1/0094 , F21S41/00 , F21W2111/02
摘要： In a vehicle that includes a rear fender for covering the upper portion of a rear wheel, a mud guard cover for covering the rear portion of the rear wheel, and a tail lamp arranged around the rear fender and the mud guard cover wherein the tail lamp includes light-emitting diodes as light sources, and includes a light-emitting diode board for placing the light-emitting diodes thereon, a control element board for placing a control element for controlling the light-emitting diodes thereon, a housing for collectively accommodating the light-emitting diode board and the control element board, and a lens for covering the housing and the control element board that is arranged downwardly of the light-emitting diode board.
摘要翻译：在包括用于覆盖后轮的上部的后挡泥板的车辆中，用于覆盖后轮的后部的防泥罩和布置在后挡泥板和防泥罩周围的尾灯，其中尾灯包括作为光源的发光二极管，并且包括用于将发光二极管放置在其上的发光二极管板，用于放置用于控制发光二极管的控制元件的控制元件板，用于共同容纳发光二极管板和控制元件板，以及用于覆盖壳体的透镜和布置在发光二极管板下方的控制元件板。

7. 发明授权

US08914201B2 Controller and control method of belt type continuously variable transmission 有权
标题翻译：皮带式无级变速器控制器及控制方法
公开(公告)号：US08914201B2
公开(公告)日：2014-12-16
申请号：US13266823
申请日：2009-04-30
申请人： Katsumi Doihara , Yoshihisa Kodama , Yasuaki Yoshikawa , Kenta Nakamura , Tomoyuki Mizuochi , Kiyotaka Sawano , Masahiro Nishi , Hidemasa Kawaguchi , Keisuke Koyama
发明人： Katsumi Doihara , Yoshihisa Kodama , Yasuaki Yoshikawa , Kenta Nakamura , Tomoyuki Mizuochi , Kiyotaka Sawano , Masahiro Nishi , Hidemasa Kawaguchi , Keisuke Koyama
IPC分类号： G06F7/00 , F16H61/662
CPC分类号： F16H61/66272 , Y10T477/624 , Y10T477/6242
摘要： A control device controls a belt type continuously variable transmission including a belt slip controller and a belt slip control permission determining unit. The device decreases belt friction when an estimated accuracy of a belt slip condition is high and prevents a belt from greatly slipping when an estimated accuracy is low. The device includes primary and secondary pulleys and the belt, and controls a gear ratio based on a running radius of the belt on a pulley by controlling primary and secondary oil pressures. The controller oscillates a secondary oil pressure, estimates the belt slip condition by monitoring a phase difference between oscillation components, and reduces an actual secondary oil pressure to maintain a predetermined belt slip condition. The determining unit permits belt slip control when a torque change speed input to the transmission mechanism is less than a predetermined value.
摘要翻译：控制装置控制带式无级变速器，其包括皮带打滑控制器和皮带打滑控制许可确定单元。当估计的皮带打滑状态的精度高时，该装置减小皮带摩擦，并且在估计精度低时防止皮带大大滑倒。该装置包括主滑轮和副滑轮以及皮带，并且通过控制主油压和次级油压来控制基于皮带轮上皮带运行半径的齿轮比。控制器振荡二次油压，通过监测振荡分量之间的相位差来估计皮带打滑状况，并且减小实际的二次油压以保持预定的皮带打滑状态。当输入到变速机构的转矩变化速度小于预定值时，确定单元允许皮带打滑控制。

8. 发明授权

US08843287B2 Belt-based, continuously-variable transmission control device and control method 有权
标题翻译：基于皮带的无级变速器控制装置及控制方法
公开(公告)号：US08843287B2
公开(公告)日：2014-09-23
申请号：US13266830
申请日：2009-04-30
申请人： Katsumi Doihara , Yoshihisa Kodama , Yasuaki Yoshikawa , Masahiro Nishi , Keisuke Koyama , Kenta Nakamura , Kiyotaka Sawano , Hidemasa Kawaguchi
发明人： Katsumi Doihara , Yoshihisa Kodama , Yasuaki Yoshikawa , Masahiro Nishi , Keisuke Koyama , Kenta Nakamura , Kiyotaka Sawano , Hidemasa Kawaguchi
IPC分类号： G06F7/00 , F16H61/662 , F16H59/70
CPC分类号： F16H61/66272 , F16H59/70 , Y10T477/624 , Y10T477/6242
摘要： A belt type continuously variable transmission mechanism has a primary pulley, a secondary pulley, and a belt, and a secondary hydraulic pressure controller to determine command secondary hydraulic pressure by feedback control based on the deviation between target secondary hydraulic pressure and actual hydraulic pressure, and control the secondary hydraulic pressure to the secondary pulley. The belt type continuously variable transmission mechanism further includes a belt slip control device to estimate a belt slip condition by monitoring the phase difference between an oscillation component included in the actual secondary hydraulic pressure and an oscillation component included in the actual transmission gear ratio and control the actual secondary hydraulic pressure to decrease based on the estimation so that a predetermined belt slip condition is maintained. The secondary hydraulic pressure control unit aborts feedback control of the secondary hydraulic pressure during belt slip control and controls the secondary hydraulic pressure by open control.
摘要翻译：带式无级变速机构具有初级带轮，次级带轮和带，以及次级液压控制器，其基于目标二次液压与实际液压之间的偏差，通过反馈控制来确定二次液压指令，以及控制次级滑轮的二级液压。带式无级变速机构还包括皮带打滑控制装置，通过监视包含在实际二次液压中的振动分量与包含在实际变速比中的振动分量之间的相位差来估计皮带打滑状况，并控制基于估计，实际的次级液压降低，从而保持预定的皮带打滑状态。二次液压控制单元在皮带打滑控制期间中止二次液压的反馈控制，并通过开度控制来控制二次液压。

9. 发明申请

US20130055841A1 GEAR SHIFT CONTROL DEVICE OF SADDLE RIDE TYPE VEHICLE 有权
标题翻译：齿轮类型车辆的齿轮换档控制装置
公开(公告)号：US20130055841A1
公开(公告)日：2013-03-07
申请号：US13595114
申请日：2012-08-27
申请人： Kenta Nakamura , Yuzuru Ishikawa , Shinichi Karube , Taichi Mori , Ippei Kawamura
发明人： Kenta Nakamura , Yuzuru Ishikawa , Shinichi Karube , Taichi Mori , Ippei Kawamura
IPC分类号： B62M25/06 , F16H59/04
CPC分类号： B62M25/06 , B62K23/08 , Y10T74/20055
摘要： A gear shift control device of a saddle ride type vehicle includes an operation pedal; a movable part which includes a movable member interlocking with and connected to the operation pedal and which has at least one of a click mechanism configured to give click feeling to an operation of the operation pedal, a stopper mechanism configured to restrict a turning operation range of the operation pedal, and a return mechanism configured to apply a spring force in a return direction to the operation pedal; and a detector which detects a gear shift operation performed by using the operation pedal, the gear shift control device configured to make a transmission perform a gear shift on the basis of a detection result of the detector.
摘要翻译：鞍座式车辆的变速控制装置包括操作踏板; 可移动部件，其包括与操作踏板互锁并连接到操作踏板的可动部件，并且具有构造成给操作踏板的操作提供咔嗒感的咔哒机构中的至少一个;限制机构，操作踏板和复位机构，其构造成将返回方向上的弹簧力施加到操作踏板; 以及检测器，其通过使用所述操作踏板检测进行的换档操作，所述变速控制装置被配置为使得变速器基于所述检测器的检测结果进行换档。

10. 发明授权

US10937256B2 Self-driving vehicle stop position notification system and vehicle stop range registration method 有权
公开(公告)号：US10937256B2
公开(公告)日：2021-03-02
申请号：US16777184
申请日：2020-01-30
申请人： Kenta Nakamura
发明人： Kenta Nakamura
IPC分类号： G08G1/123 , G07C5/06 , G06K9/00 , G07C5/00 , H04N5/232 , H04N5/247
摘要： Self-driving vehicle stop position notification system, comprising a management server for managing an autonomous driving support application for the self-driving vehicle, and a user terminal; wherein the user terminal instructs the self-driving vehicle to drive to the stop range specified by the vehicle stop range via the management server, and transmits an image captured by the camera when the self-driving vehicle stops in the stop range to the management server, the management server collates video information consisting of the image with the pre-registered video information of the vehicle stop range associated with a location information, determines the stop position based on the result, displays the stop position on a map, and notifies the stop position displayed on the map to the user terminal.

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