专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080093342A1 ETCHING APPARATUS FOR SEMICONDUTOR FABRICATION 审中-公开
标题翻译：用于半导体制造的蚀刻装置
公开(公告)号：US20080093342A1
公开(公告)日：2008-04-24
申请号：US11962271
申请日：2007-12-21
申请人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
发明人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
IPC分类号： C23F1/00
CPC分类号： H01J37/32706 , H01J37/32091 , H01J37/32541
摘要： Method of operating an apparatus which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method is as follows. A substrate to be etched is placed between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments. N bias powers are determined which when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas. Then, the bias power system is used to apply the N bias powers the N cathode segments.
摘要翻译：操作能够以基本上相同的蚀刻速率蚀刻具有不同图案密度的衬底的不同衬底蚀刻区域的装置的方法。该装置包括（a）室; （b）室中的阳极和阴极; 和（c）耦合到所述阴极的偏置功率系统，其中所述阴极包括多个阴极段。操作方法如下。要蚀刻的衬底放置在阳极和阴极之间，其中衬底包括N个衬底蚀刻区域，并且N个衬底蚀刻区域直接在N个阴极段上方。确定N偏置功率，当在衬底的蚀刻期间施加到N个阴极段时，将产生对于N个衬底蚀刻区域基本上相同的蚀刻速率。然后，使用偏置功率系统对N个阴极段施加N个偏置功率。

2. 发明申请

US20060191638A1 ETCHING APPARATUS FOR SEMICONDUCTOR FABRICATION 审中-公开
标题翻译：用于半导体制造的蚀刻装置
公开(公告)号：US20060191638A1
公开(公告)日：2006-08-31
申请号：US10906627
申请日：2005-02-28
申请人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
发明人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32091 , H01J37/32541
摘要： An apparatus (and method for operating the same) which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method includes the steps of: (i) placing a substrate to be etched between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments; (ii) determining N bias powers which, when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas; and (iii) using the bias power system to apply the N bias powers the N cathode segments.
摘要翻译：一种用于以基本上相同的蚀刻速率蚀刻具有不同图案密度的衬底的不同衬底蚀刻区域的装置（及其操作方法）。该装置包括（a）室; （b）室中的阳极和阴极; 和（c）耦合到所述阴极的偏置功率系统，其中所述阴极包括多个阴极段。操作方法包括以下步骤：（i）将待蚀刻的衬底放置在阳极和阴极之间，其中衬底包括N个衬底蚀刻区域，并且N个衬底蚀刻区域直接在N个阴极段的上方; （ii）确定N偏压功率，当在衬底的蚀刻期间施加到N个阴极段时，将产生对于N个衬底蚀刻区域基本上相同的蚀刻速率; 和（iii）使用偏置电力系统对N个阴极段施加N个偏置功率。

3. 发明申请

US20050266317A1 LIGHT SCATTERING EUVL MASK 有权
标题翻译：光散射EUVL面罩
公开(公告)号：US20050266317A1
公开(公告)日：2005-12-01
申请号：US10709733
申请日：2004-05-25
申请人： Emily Gallagher , Louis Kindt , Carey Thiel
发明人： Emily Gallagher , Louis Kindt , Carey Thiel
IPC分类号： B32B9/00 , B32B15/00 , B32B17/06 , G03C5/00 , G03F1/00 , G03F1/14 , G21K1/06 , G21K5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G21K1/062 , G21K2201/067
摘要： A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask. The Mo/Si layer comprises uneven surfaces conformal with the sloped surfaces of the crystalline silicon layer, wherein the sloped surfaces of the Mo/Si layer may be configured as roughened, jagged, sloped, or curved surfaces, wherein the uneven surfaces deflect incoming extreme ultraviolet radiation waves to avoid collection by exposure optics and prevent printing onto a semiconductor wafer.
摘要翻译：光散射EUVL掩模及其形成方法包括在超低膨胀衬底上沉积晶体硅层，在结晶硅层上沉积硬掩模，图案化硬掩模; 蚀刻晶体硅层，去除硬掩模，以及在晶体硅层上沉积Mo / Si层，其中晶体硅层的蚀刻区域包括蚀刻区域中的不平坦表面。该方法还包括在硬掩模上沉积光致抗蚀剂掩模，在光致抗蚀剂掩模中产生图案，并将图案转移到硬掩模。 Mo / Si层包括与晶体硅层的倾斜表面共形的不平坦表面，其中Mo / Si层的倾斜表面可以被配置为粗糙的，锯齿状的，倾斜的或弯曲的表面，其中不平坦表面偏转入射极限紫外线辐射波，以避免由曝光光学元件收集并防止印刷到半导体晶片上。

4. 发明申请

US20060199082A1 MASK REPAIR 审中-公开
标题翻译：面膜修复
公开(公告)号：US20060199082A1
公开(公告)日：2006-09-07
申请号：US10906662
申请日：2005-03-01
申请人： Philip Flanigan , Emily Gallagher , Louis Kindt , Michael Schmidt , David Thibault , Carey Thiel
发明人： Philip Flanigan , Emily Gallagher , Louis Kindt , Michael Schmidt , David Thibault , Carey Thiel
IPC分类号： C03C25/68 , C23C14/32 , B44C1/22 , C03C15/00 , C23F1/00 , C23C14/00 , G03F1/00
CPC分类号： G03F1/72 , C03C15/00 , C03C17/34 , C03C2218/34 , C03C2218/355
摘要： A photomask repair method is provided which has the spatial resolution of a focused energy beam process without the corresponding potential for damage to the photomask pattern and underlying transparent substrate. A photomask defect is repaired by first providing a masking film over the photomask pattern. Next, a high spatial resolution focused energy beam repair technique, such as laser ablation, focused ion beam, or electron beam, is used to remove a portion of the masking film which corresponds to an underlying defect in the photomask pattern. After the defect in the photomask pattern has been exposed and the rest of the non-defective photomask pattern is protected by the masking film, a chemical etching process is used to remove the defect which selectively etches the photomask pattern material without harming the underlying substrate. Once the defect has been removed, the masking film is removed. Additionally, a conductive layer may be included to reduce charge build up on the surface and its negative impact on charged beam placement control.
摘要翻译：提供了一种光掩模修复方法，其具有聚焦能量束过程的空间分辨率，而没有对光掩模图案和下面的透明基底的相应的潜在损害。通过首先在光掩模图案上提供掩模膜来修复光掩模缺陷。接下来，使用诸如激光烧蚀，聚焦离子束或电子束的高空间分辨率聚焦能量束修复技术来去除对应于光掩模图案中的潜在缺陷的掩模膜的一部分。在光掩模图案中的缺陷已经曝光并且其余的无缺陷光掩模图案被掩模膜保护之后，使用化学蚀刻工艺来去除选择性蚀刻光掩模图案材料而不损害下面的衬底的缺陷。一旦缺陷被去除，去除掩模膜。此外，可以包括导电层以减少在表面上积累的电荷及其对带电束放置控制的负面影响。

5. 发明申请

US20060146313A1 METHOD FOR ADJUSTING LITHOGRAPHIC MASK FLATNESS USING THERMALLY INDUCED PELLICLE STRESS 有权
标题翻译：使用热诱导油脂应力调整光刻掩模的方法
公开(公告)号：US20060146313A1
公开(公告)日：2006-07-06
申请号：US10905453
申请日：2005-01-05
申请人： Emily Gallagher , Louis Kindt , James Slinkman , Richard Wistrom
发明人： Emily Gallagher , Louis Kindt , James Slinkman , Richard Wistrom
IPC分类号： G03B27/62
CPC分类号： G03F1/64 , G03F1/60
摘要： A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature.
摘要翻译：调整光刻掩模的平坦度的方法包括：确定掩模的初始掩模平坦度，确定施加的应力以使掩模达到期望的掩模平坦度，以及确定要安装到掩模的防护薄膜组件框架的安装温度，安装温度对应于施加的应力。将防护膜框架的实际温度调整到确定的安装温度。

6. 发明申请

US20070172743A1 System And Method For Storing And Transporting Photomasks In Fluid 失效
标题翻译：用于在流体中储存和运输光掩模的系统和方法
公开(公告)号：US20070172743A1
公开(公告)日：2007-07-26
申请号：US11275694
申请日：2006-01-25
申请人： Emily Gallagher , Louis Kindt
发明人： Emily Gallagher , Louis Kindt
IPC分类号： G03F1/00
CPC分类号： G03F7/70741 , G03F1/66
摘要： An apparatus for and method of storing and transporting a photomask. A photomask storage container has fluid-tight walls, an opening for moving the photomask into and out of the container, and a sealable inlet for a storage fluid. The method includes placing the photomask in the storage container through the opening, introducing a storage fluid into the container through the inlet, closing the container opening and sealing the storage fluid inlet, whereby the storage fluid is essentially inert with respect to the photomask. The method then includes opening the container opening and contacting a surface of the photomask with an alcohol-containing gas while removing the photomask from the storage container to remove the storage fluid from the photomask surface.
摘要翻译：用于存储和传送光掩模的装置和方法。光掩模存储容器具有流体密封的壁，用于将光掩模移入和移出容器的开口以及用于存储流体的可密封入口。该方法包括通过开口将光掩模放置在存储容器中，通过入口将储存流体引入容器中，关闭容器开口并密封储存流体入口，由此存储流体相对于光掩模基本上是惰性的。该方法然后包括打开容器开口并使光掩模的表面与含醇气体接触，同时从存储容器中移除光掩模以从光掩模表面去除储存流体。

7. 发明申请

US20050243452A1 MONOLITHIC HARD PELLICLE 失效
标题翻译：单晶硬壳
公开(公告)号：US20050243452A1
公开(公告)日：2005-11-03
申请号：US10709326
申请日：2004-04-28
申请人： Emily Gallagher , Rogert Leidy , Michael Lercel , Kenneth Racette , Andrew Watts
发明人： Emily Gallagher , Rogert Leidy , Michael Lercel , Kenneth Racette , Andrew Watts
IPC分类号： G03F1/14 , G02B5/22 , G03F7/00 , G03F7/20
CPC分类号： G03F1/64 , G03F1/62 , G03F7/70983
摘要： A monolithic optical pellicle and method of making used to protect a photomask during photolithography processing. The monolithic optical pellicle is comprised of a pellicle plate having a recessed central portion integrally formed with a perimeter frame of the pellicle plate such that it is a one-piece optical pellicle. The monolithic optical pellicle comprises a material of sufficient rigidity to minimize distortions in and maximize durability of the pellicle when used in combination with the recessed portion having a thickness that prevents sagging thereof due to applied forces on the resultant monolithic optical pellicle. This recessed central portion is the optical pellicle portion of the present monolithic optical pellicle, while the integral perimeter frame is used to attach the monolithic optical pellicle at the desired stand-off distance to a photomask. The monolithic optical pellicle preferably comprises a material that is transparent to an exposure field at about 157 nm wavelengths.
摘要翻译：一种单片光学防护薄膜和用于在光刻处理期间保护光掩模的方法。单片光学防护薄膜组件由具有与防护薄膜组件的周边框架一体形成的凹形中心部分的防护薄膜组成，使得它是一体的光学防护薄片组件。单片光学防护薄膜组件包括足够刚度的材料，以最小化防护薄膜组件的失真并最大化耐久性的材料，当与具有防止由于所得单片光学防护薄膜组件上施加的力而下垂的凹陷部分组合时。这个凹陷的中心部分是本单片光学防护薄膜的光学防护薄膜部分，而整体的周边框架用于以一个光掩模的所需的间隔距离连接单片光学薄膜。单片光学防护薄膜优选包括对于约157nm波长的曝光场透明的材料。

8. 发明申请

US20070174012A1 Method Of Determining Photomask Inspection Capabilities 审中-公开
标题翻译：确定光掩模检测能力的方法
公开(公告)号：US20070174012A1
公开(公告)日：2007-07-26
申请号：US11275695
申请日：2006-01-25
申请人： Karen Badger , Emily Gallagher , Ian Stobert , Alexander Wei
发明人： Karen Badger , Emily Gallagher , Ian Stobert , Alexander Wei
IPC分类号： G01N37/00 , G06F19/00
CPC分类号： G03F1/84 , G03F1/44
摘要： A method of and article for determining photomask inspection capabilities. The article comprises a photomask having a first array of a plurality of test pattern shapes that include ordered variations of a first shape variable, from a largest to a smallest dimension, and a second array of a plurality of test pattern shapes, that include the ordered variations of the first shape variable and further include ordered variations of a second shape variable, from a largest to a smallest dimension. The method includes inspecting the first array of test pattern shapes of the photomask in order of the variations of the first shape variable. If at least two consecutive first test pattern shapes in the first array fail an inspection criteria, the failed consecutive first test pattern shapes are marked as failed. The method then includes marking for inspection in the second array of test pattern shapes of the photomask those shapes having first shape variables in the vicinity of those of the failed consecutive first test pattern shapes, and inspecting the marked second array of test pattern shapes in order of the variations of the first shape variable. If at least two consecutive second test pattern shapes of the marked second array test pattern shapes fail an inspection criteria, the failed consecutive second test pattern shapes are marked as failed.
摘要翻译：一种用于确定光掩模检查能力的方法和制品。该物品包括具有多个测试图形形状的第一阵列的光掩模，其包括从最大尺寸到最小尺寸的第一形状变量的有序变化，以及多个测试图案形状的第二阵列，其包括有序第一形状变量的变化并且还包括从最大尺寸到最小尺寸的第二形状变量的有序变化。该方法包括按照第一形状变量的变化的顺序检查光掩模的测试图案形状的第一阵列。如果第一个阵列中至少有两个连续的第一个测试图案形状不符合检查条件，则失败的连续的第一个测试图案形状将被标记为失败。然后，该方法包括在光掩模的测试图形形状的第二阵列中进行检查的标记，这些形状在失败的连续的第一测试图案形状的那些附近具有第一形状变量，并按顺序检查标记的测试图案形状的第二阵列的第一形状变量的变化。如果标记的第二阵列测试图形形状的至少两个连续的第二测试图形形状不符合检查标准，则故障的连续第二测试图案形状被标记为失败。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式