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1. 发明申请

US20060199082A1 MASK REPAIR 审中-公开
标题翻译：面膜修复
公开(公告)号：US20060199082A1
公开(公告)日：2006-09-07
申请号：US10906662
申请日：2005-03-01
申请人： Philip Flanigan , Emily Gallagher , Louis Kindt , Michael Schmidt , David Thibault , Carey Thiel
发明人： Philip Flanigan , Emily Gallagher , Louis Kindt , Michael Schmidt , David Thibault , Carey Thiel
IPC分类号： C03C25/68 , C23C14/32 , B44C1/22 , C03C15/00 , C23F1/00 , C23C14/00 , G03F1/00
CPC分类号： G03F1/72 , C03C15/00 , C03C17/34 , C03C2218/34 , C03C2218/355
摘要： A photomask repair method is provided which has the spatial resolution of a focused energy beam process without the corresponding potential for damage to the photomask pattern and underlying transparent substrate. A photomask defect is repaired by first providing a masking film over the photomask pattern. Next, a high spatial resolution focused energy beam repair technique, such as laser ablation, focused ion beam, or electron beam, is used to remove a portion of the masking film which corresponds to an underlying defect in the photomask pattern. After the defect in the photomask pattern has been exposed and the rest of the non-defective photomask pattern is protected by the masking film, a chemical etching process is used to remove the defect which selectively etches the photomask pattern material without harming the underlying substrate. Once the defect has been removed, the masking film is removed. Additionally, a conductive layer may be included to reduce charge build up on the surface and its negative impact on charged beam placement control.
摘要翻译：提供了一种光掩模修复方法，其具有聚焦能量束过程的空间分辨率，而没有对光掩模图案和下面的透明基底的相应的潜在损害。通过首先在光掩模图案上提供掩模膜来修复光掩模缺陷。接下来，使用诸如激光烧蚀，聚焦离子束或电子束的高空间分辨率聚焦能量束修复技术来去除对应于光掩模图案中的潜在缺陷的掩模膜的一部分。在光掩模图案中的缺陷已经曝光并且其余的无缺陷光掩模图案被掩模膜保护之后，使用化学蚀刻工艺来去除选择性蚀刻光掩模图案材料而不损害下面的衬底的缺陷。一旦缺陷被去除，去除掩模膜。此外，可以包括导电层以减少在表面上积累的电荷及其对带电束放置控制的负面影响。

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