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1. 发明申请

US20060199082A1 MASK REPAIR 审中-公开
标题翻译：面膜修复
公开(公告)号：US20060199082A1
公开(公告)日：2006-09-07
申请号：US10906662
申请日：2005-03-01
申请人： Philip Flanigan , Emily Gallagher , Louis Kindt , Michael Schmidt , David Thibault , Carey Thiel
发明人： Philip Flanigan , Emily Gallagher , Louis Kindt , Michael Schmidt , David Thibault , Carey Thiel
IPC分类号： C03C25/68 , C23C14/32 , B44C1/22 , C03C15/00 , C23F1/00 , C23C14/00 , G03F1/00
CPC分类号： G03F1/72 , C03C15/00 , C03C17/34 , C03C2218/34 , C03C2218/355
摘要： A photomask repair method is provided which has the spatial resolution of a focused energy beam process without the corresponding potential for damage to the photomask pattern and underlying transparent substrate. A photomask defect is repaired by first providing a masking film over the photomask pattern. Next, a high spatial resolution focused energy beam repair technique, such as laser ablation, focused ion beam, or electron beam, is used to remove a portion of the masking film which corresponds to an underlying defect in the photomask pattern. After the defect in the photomask pattern has been exposed and the rest of the non-defective photomask pattern is protected by the masking film, a chemical etching process is used to remove the defect which selectively etches the photomask pattern material without harming the underlying substrate. Once the defect has been removed, the masking film is removed. Additionally, a conductive layer may be included to reduce charge build up on the surface and its negative impact on charged beam placement control.
摘要翻译：提供了一种光掩模修复方法，其具有聚焦能量束过程的空间分辨率，而没有对光掩模图案和下面的透明基底的相应的潜在损害。通过首先在光掩模图案上提供掩模膜来修复光掩模缺陷。接下来，使用诸如激光烧蚀，聚焦离子束或电子束的高空间分辨率聚焦能量束修复技术来去除对应于光掩模图案中的潜在缺陷的掩模膜的一部分。在光掩模图案中的缺陷已经曝光并且其余的无缺陷光掩模图案被掩模膜保护之后，使用化学蚀刻工艺来去除选择性蚀刻光掩模图案材料而不损害下面的衬底的缺陷。一旦缺陷被去除，去除掩模膜。此外，可以包括导电层以减少在表面上积累的电荷及其对带电束放置控制的负面影响。

2. 发明申请

US20050266317A1 LIGHT SCATTERING EUVL MASK 有权
标题翻译：光散射EUVL面罩
公开(公告)号：US20050266317A1
公开(公告)日：2005-12-01
申请号：US10709733
申请日：2004-05-25
申请人： Emily Gallagher , Louis Kindt , Carey Thiel
发明人： Emily Gallagher , Louis Kindt , Carey Thiel
IPC分类号： B32B9/00 , B32B15/00 , B32B17/06 , G03C5/00 , G03F1/00 , G03F1/14 , G21K1/06 , G21K5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G21K1/062 , G21K2201/067
摘要： A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask. The Mo/Si layer comprises uneven surfaces conformal with the sloped surfaces of the crystalline silicon layer, wherein the sloped surfaces of the Mo/Si layer may be configured as roughened, jagged, sloped, or curved surfaces, wherein the uneven surfaces deflect incoming extreme ultraviolet radiation waves to avoid collection by exposure optics and prevent printing onto a semiconductor wafer.
摘要翻译：光散射EUVL掩模及其形成方法包括在超低膨胀衬底上沉积晶体硅层，在结晶硅层上沉积硬掩模，图案化硬掩模; 蚀刻晶体硅层，去除硬掩模，以及在晶体硅层上沉积Mo / Si层，其中晶体硅层的蚀刻区域包括蚀刻区域中的不平坦表面。该方法还包括在硬掩模上沉积光致抗蚀剂掩模，在光致抗蚀剂掩模中产生图案，并将图案转移到硬掩模。 Mo / Si层包括与晶体硅层的倾斜表面共形的不平坦表面，其中Mo / Si层的倾斜表面可以被配置为粗糙的，锯齿状的，倾斜的或弯曲的表面，其中不平坦表面偏转入射极限紫外线辐射波，以避免由曝光光学元件收集并防止印刷到半导体晶片上。

3. 发明申请

US20080093342A1 ETCHING APPARATUS FOR SEMICONDUTOR FABRICATION 审中-公开
标题翻译：用于半导体制造的蚀刻装置
公开(公告)号：US20080093342A1
公开(公告)日：2008-04-24
申请号：US11962271
申请日：2007-12-21
申请人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
发明人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
IPC分类号： C23F1/00
CPC分类号： H01J37/32706 , H01J37/32091 , H01J37/32541
摘要： Method of operating an apparatus which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method is as follows. A substrate to be etched is placed between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments. N bias powers are determined which when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas. Then, the bias power system is used to apply the N bias powers the N cathode segments.
摘要翻译：操作能够以基本上相同的蚀刻速率蚀刻具有不同图案密度的衬底的不同衬底蚀刻区域的装置的方法。该装置包括（a）室; （b）室中的阳极和阴极; 和（c）耦合到所述阴极的偏置功率系统，其中所述阴极包括多个阴极段。操作方法如下。要蚀刻的衬底放置在阳极和阴极之间，其中衬底包括N个衬底蚀刻区域，并且N个衬底蚀刻区域直接在N个阴极段上方。确定N偏置功率，当在衬底的蚀刻期间施加到N个阴极段时，将产生对于N个衬底蚀刻区域基本上相同的蚀刻速率。然后，使用偏置功率系统对N个阴极段施加N个偏置功率。

4. 发明申请

US20060191638A1 ETCHING APPARATUS FOR SEMICONDUCTOR FABRICATION 审中-公开
标题翻译：用于半导体制造的蚀刻装置
公开(公告)号：US20060191638A1
公开(公告)日：2006-08-31
申请号：US10906627
申请日：2005-02-28
申请人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
发明人： Timothy Dalton , Emily Gallagher , Louis Kindt , Carey Thiel , Andrew Watts
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32091 , H01J37/32541
摘要： An apparatus (and method for operating the same) which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method includes the steps of: (i) placing a substrate to be etched between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments; (ii) determining N bias powers which, when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas; and (iii) using the bias power system to apply the N bias powers the N cathode segments.
摘要翻译：一种用于以基本上相同的蚀刻速率蚀刻具有不同图案密度的衬底的不同衬底蚀刻区域的装置（及其操作方法）。该装置包括（a）室; （b）室中的阳极和阴极; 和（c）耦合到所述阴极的偏置功率系统，其中所述阴极包括多个阴极段。操作方法包括以下步骤：（i）将待蚀刻的衬底放置在阳极和阴极之间，其中衬底包括N个衬底蚀刻区域，并且N个衬底蚀刻区域直接在N个阴极段的上方; （ii）确定N偏压功率，当在衬底的蚀刻期间施加到N个阴极段时，将产生对于N个衬底蚀刻区域基本上相同的蚀刻速率; 和（iii）使用偏置电力系统对N个阴极段施加N个偏置功率。

5. 发明申请

US20050106474A1 METHOD FOR CONTROLLING LINEWIDTH IN ADVANCED LITHOGRAPHY MASKS USING ELECTROCHEMISTRY 失效
标题翻译：使用电化学方法控制先进层析掩模中的线性
公开(公告)号：US20050106474A1
公开(公告)日：2005-05-19
申请号：US10707034
申请日：2003-11-17
申请人： Louis Kindt , Carey Thiel
发明人： Louis Kindt , Carey Thiel
IPC分类号： C25D5/02 , C25D21/12 , G03F1/14 , G03F9/00 , G21K5/10 , H01J37/08 , H01L21/288 , H01L21/445
CPC分类号： C25D21/12 , C25D5/022 , G03F1/24 , G03F1/38 , G03F1/72 , G03F1/84
摘要： A method for controlling the linewidth of a feature formed within an advanced lithography mask includes electrochemically depositing an additive material on exposed sidewalls of an etched first layer of the mask, wherein the top of the etched first layer remains covered by a hardmask used during the etching of the first layer. A second layer beneath the etched first layer is resistant to the electrochemical deposition of the additive material thereupon.
摘要翻译：用于控制在先进光刻掩模内形成的特征的线宽的方法包括在掩模的蚀刻的第一层的暴露的侧壁上电化学沉积添加材料，其中蚀刻的第一层的顶部保持被蚀刻期间使用的硬掩模覆盖的第一层。蚀刻的第一层下面的第二层对其上的添加剂材料的电化学沉积是有抵抗力的。

6. 发明申请

US20070172743A1 System And Method For Storing And Transporting Photomasks In Fluid 失效
标题翻译：用于在流体中储存和运输光掩模的系统和方法
公开(公告)号：US20070172743A1
公开(公告)日：2007-07-26
申请号：US11275694
申请日：2006-01-25
申请人： Emily Gallagher , Louis Kindt
发明人： Emily Gallagher , Louis Kindt
IPC分类号： G03F1/00
CPC分类号： G03F7/70741 , G03F1/66
摘要： An apparatus for and method of storing and transporting a photomask. A photomask storage container has fluid-tight walls, an opening for moving the photomask into and out of the container, and a sealable inlet for a storage fluid. The method includes placing the photomask in the storage container through the opening, introducing a storage fluid into the container through the inlet, closing the container opening and sealing the storage fluid inlet, whereby the storage fluid is essentially inert with respect to the photomask. The method then includes opening the container opening and contacting a surface of the photomask with an alcohol-containing gas while removing the photomask from the storage container to remove the storage fluid from the photomask surface.
摘要翻译：用于存储和传送光掩模的装置和方法。光掩模存储容器具有流体密封的壁，用于将光掩模移入和移出容器的开口以及用于存储流体的可密封入口。该方法包括通过开口将光掩模放置在存储容器中，通过入口将储存流体引入容器中，关闭容器开口并密封储存流体入口，由此存储流体相对于光掩模基本上是惰性的。该方法然后包括打开容器开口并使光掩模的表面与含醇气体接触，同时从存储容器中移除光掩模以从光掩模表面去除储存流体。

7. 发明申请

US20060146313A1 METHOD FOR ADJUSTING LITHOGRAPHIC MASK FLATNESS USING THERMALLY INDUCED PELLICLE STRESS 有权
标题翻译：使用热诱导油脂应力调整光刻掩模的方法
公开(公告)号：US20060146313A1
公开(公告)日：2006-07-06
申请号：US10905453
申请日：2005-01-05
申请人： Emily Gallagher , Louis Kindt , James Slinkman , Richard Wistrom
发明人： Emily Gallagher , Louis Kindt , James Slinkman , Richard Wistrom
IPC分类号： G03B27/62
CPC分类号： G03F1/64 , G03F1/60
摘要： A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature.
摘要翻译：调整光刻掩模的平坦度的方法包括：确定掩模的初始掩模平坦度，确定施加的应力以使掩模达到期望的掩模平坦度，以及确定要安装到掩模的防护薄膜组件框架的安装温度，安装温度对应于施加的应力。将防护膜框架的实际温度调整到确定的安装温度。

8. 发明申请

US20050087939A1 ADAPTIVE ELECTROSTATIC PIN CHUCK 失效
标题翻译：自适应静电引脚卡
公开(公告)号：US20050087939A1
公开(公告)日：2005-04-28
申请号：US10605773
申请日：2003-10-24
申请人： Brian Caldwell , Raymond Jeffer , Louis Kindt
发明人： Brian Caldwell , Raymond Jeffer , Louis Kindt
IPC分类号： B23B31/28 , H01L21/00 , H01L21/683
CPC分类号： H01L21/67288 , H01L21/6831 , Y10T29/49771 , Y10T279/23
摘要： Disclosed is an electrostatic chuck and system for maintaining a device flat within the electrostatic chuck. The electrostatic chuck has a plate, height adjustment mechanisms connected to the plate; and electrostatic chuck pins connected to the height adjustment mechanisms. The system provides a measurement tool adapted to measure the flatness of the device held by the electrostatic chuck pins and a computer connected to the height adjustment mechanisms and the measurement tool. The computer adjusts the flatness of the device by adjusting the height adjustment mechanisms based on feedback from the measurement tool. The computer is adapted to change the shape of the device to conform to a pre-existing standard.
摘要翻译：公开了一种用于将设备保持在静电卡盘内部的静电卡盘和系统。静电吸盘具有板，与板连接的高度调节机构; 和静电卡盘销连接到高度调节机构。该系统提供一种测量工具，该测量工具适用于测量由静电卡盘销保持的装置的平面度以及连接到高度调节机构和测量工具的计算机。计算机通过根据测量工具的反馈调节高度调节机构来调节设备的平整度。该计算机适于改变设备的形状以符合预先存在的标准。

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