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1. 发明授权

US07828893B2 Silicon wafer and process for the heat treatment of a silicon wafer 有权
标题翻译：硅晶片和用于硅晶片热处理的工艺
公开(公告)号：US07828893B2
公开(公告)日：2010-11-09
申请号：US11386855
申请日：2006-03-22
申请人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
发明人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
IPC分类号： C30B15/10
CPC分类号： C30B31/14 , C30B25/12 , C30B29/06 , C30B33/02 , Y10T117/1052 , Y10T117/1068
摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.
摘要翻译：不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1×1013-8.1014原子/ cm3，氧浓度为5.2×1017〜7.5×1017原子/ cm3，a 中心厚度BMD密度为3·108-2·1010cm-3，线性滑移的累积长度为3cm，面积滑移区域的累积面积为7cm 2，前表面具有<45个氮诱导缺陷 DNN通道中的>0.13μmLSE，厚度至少为5μm的层，其中发生尺寸为≥0.09μm的nlE; 1×104 COPs / cm 3，厚度≥5μm的无BMD层。这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。对于每个保持器，选择最大加热速率以避免形成滑动。

2. 发明申请

US20060213424A1 Silicon wafer and process for the heat treatment of a silicon wafer 有权
标题翻译：硅晶片和用于硅晶片热处理的工艺
公开(公告)号：US20060213424A1
公开(公告)日：2006-09-28
申请号：US11386855
申请日：2006-03-22
申请人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
发明人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B31/14 , C30B25/12 , C30B29/06 , C30B33/02 , Y10T117/1052 , Y10T117/1068
摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.
摘要翻译：不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1.10×13×10 4原子/ cm 3， / SUP>，氧浓度为5.2.10±17.5×10 17原子/ cm 3，中心厚度BMD密度为3.10 直线滑移的累积长度<= 3cm，面积滑移区域的累积面积<= 7 在DNN通道中，前表面具有≥0.33μmLSE的氮诱发缺陷，至少5μm厚的层，其中<= 1.10×4 大于>0.09μm的COPs / cm 3> 3，并且不含BMD的层>5μm厚。这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。对于每个保持器，选择最大加热速率以避免形成滑动。

3. 发明授权

US08241421B2 Epitaxial wafer and production method thereof 有权
标题翻译：外延晶片及其制造方法
公开(公告)号：US08241421B2
公开(公告)日：2012-08-14
申请号：US12895950
申请日：2010-10-01
申请人： Katsuhiko Nakai , Timo Mueller , Atsushi Ikari , Wilfried von Ammon , Martin Weber
发明人： Katsuhiko Nakai , Timo Mueller , Atsushi Ikari , Wilfried von Ammon , Martin Weber
IPC分类号： H01L21/00
CPC分类号： C30B29/06 , C30B15/02 , C30B15/04 , C30B15/20 , C30B15/206 , Y10T428/12528
摘要： The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm−3 to 3×1014 cm−3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.
摘要翻译：由含有加氢的硅衬底晶片的空隙产生的外延层缺陷通过以下方式制造外延晶片的方法被抑制：通过切克劳斯基法生长硅晶体，包括向硅熔体中加入氢和氮，并从硅熔体氮浓度为3×1013cm-3至3×1014cm-3的硅晶体，通过加工硅晶体制备硅衬底，并在硅衬底的表面形成外延层。

4. 发明申请

US20110084366A1 Epitaxial Wafer and Production Method Thereof 有权
标题翻译：外延晶圆及其制作方法
公开(公告)号：US20110084366A1
公开(公告)日：2011-04-14
申请号：US12895950
申请日：2010-10-01
申请人： Katsuhiko Nakai , Timo Mueller , Atsushi Ikari , Wilfried von Ammon , Martin Weber
发明人： Katsuhiko Nakai , Timo Mueller , Atsushi Ikari , Wilfried von Ammon , Martin Weber
IPC分类号： H01L23/00 , H01L21/71
CPC分类号： C30B29/06 , C30B15/02 , C30B15/04 , C30B15/20 , C30B15/206 , Y10T428/12528
摘要： The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm−3 to 3×1014 cm−3,preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.
摘要翻译：由含有加氢的硅衬底晶片的空隙产生的外延层缺陷通过以下方式制造外延晶片的方法被抑制：通过切克劳斯基法生长硅晶体，包括向硅熔体中加入氢和氮，并从硅熔体氮浓度为3×1013cm-3至3×1014cm-3的硅晶体，通过加工硅晶体制备硅衬底，并在硅衬底的表面形成外延层。

5. 发明授权

US08221550B2 Process and apparatus for producing a single crystal of semiconductor material 有权
标题翻译：用于制造半导体材料的单晶的工艺和设备
公开(公告)号：US08221550B2
公开(公告)日：2012-07-17
申请号：US12640755
申请日：2009-12-17
申请人： Wilfried von Ammon
发明人： Wilfried von Ammon
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B13/08 , C30B13/10 , C30B13/14 , C30B13/16 , C30B13/30 , Y10T117/10 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.
摘要翻译：一种制造半导体材料的单晶的方法，其中熔体的一部分通过拉线圈保持液态，在晶种上固化以形成生长的单晶，并且将颗粒熔化以保持生长的单晶。熔化的颗粒在延迟后通入熔体。还有一种适用于进行该方法并具有延迟熔融颗粒和熔体混合的装置。

6. 发明申请

US20120039786A1 Silicon Wafer and Method For Producing It 有权
标题翻译：硅晶片及其生产方法
公开(公告)号：US20120039786A1
公开(公告)日：2012-02-16
申请号：US13191534
申请日：2011-07-27
申请人： Wilfried von Ammon , Gudrun Kissinger , Dawid Kot
发明人： Wilfried von Ammon , Gudrun Kissinger , Dawid Kot
IPC分类号： C01B33/02 , F24J3/00
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively: a BMD density of at most 1·108 cm−3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., and a BMD density of at least 1·109 cm−3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface.
摘要翻译：氧化浓度为5×1017〜7.5×1017cm-3的硅片在以下热处理后具有以下BMD密度：交替进行处理3小时后的至少1×10 8 cm -3的BMD密度在780℃下，随后在1000℃下进行16小时，并且从起始温度500℃以1K /分钟的加热速率加热硅晶片之后，BMD密度为至少1×10 9 cm -3。 ℃至目标温度为1000℃，随后在1000℃下保持16小时。通过用闪光灯照射加热的晶片的方法制备晶片，其传递能量，其是熔化晶片表面所需的能量密度的50至100％。

7. 发明授权

US08043427B2 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US08043427B2
公开(公告)日：2011-10-25
申请号：US12011713
申请日：2008-01-29
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

8. 发明授权

US07470323B2 Process for producing p-doped and epitaxially coated semiconductor wafers from silicon 有权
标题翻译：从硅生产p掺杂和外延涂覆的半导体晶片的工艺
公开(公告)号：US07470323B2
公开(公告)日：2008-12-30
申请号：US11870565
申请日：2007-10-11
申请人： Wilfried von Ammon , Katsuhiko Nakai , Martin Weber , Herbert Schmidt , Atsushi Ikari
发明人： Wilfried von Ammon , Katsuhiko Nakai , Martin Weber , Herbert Schmidt , Atsushi Ikari
IPC分类号： C30B15/20
CPC分类号： C30B15/00 , C30B29/06
摘要： The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.
摘要翻译： Czochralski方法用于从硅产生p掺杂和外延涂覆的半导体晶片，其中拉取单晶硅，并且在拉时，掺杂硼，氢和氮，并将由此获得的单晶加工形成外延涂覆的p掺杂半导体晶片。

9. 发明授权

US07387676B2 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
标题翻译：具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片
公开(公告)号：US07387676B2
公开(公告)日：2008-06-17
申请号：US11452870
申请日：2006-06-14
申请人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
发明人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
IPC分类号： C30B15/00
CPC分类号： C30B15/203 , C30B29/06
摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.
摘要翻译：在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比值V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩该区域的尺寸不再超过临界尺寸。在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

10. 发明申请

US20080113171A1 Silicon Wafer For Semiconductor And Manufacturing Method Thereof 有权
标题翻译：硅晶片半导体及其制造方法
公开(公告)号：US20080113171A1
公开(公告)日：2008-05-15
申请号：US11857460
申请日：2007-09-19
申请人： Katsuhiko Nakai , Wilfried von Ammon , Sei Fukushima , Herbert Schmidt , Martin Weber
发明人： Katsuhiko Nakai , Wilfried von Ammon , Sei Fukushima , Herbert Schmidt , Martin Weber
IPC分类号： B32B7/02 , C30B15/14
CPC分类号： H01L21/3225 , C30B15/206 , C30B29/06 , C30B33/00 , Y10T428/24992
摘要： Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×107/cm3, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.
摘要翻译：在5×10 11 / cm 3范围内，在晶片表面下方>20μm处的位置具有20至40nm的BMD密度的硅晶片，以及尺寸> = 300nm的BMD的密度显示减少的滑脱位错和翘曲。将晶片从在特定条件下生长的晶体切片，然后进行低温热处理和高温退火。

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