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1. 发明授权

US07828893B2 Silicon wafer and process for the heat treatment of a silicon wafer 有权
标题翻译：硅晶片和用于硅晶片热处理的工艺
公开(公告)号：US07828893B2
公开(公告)日：2010-11-09
申请号：US11386855
申请日：2006-03-22
申请人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
发明人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
IPC分类号： C30B15/10
CPC分类号： C30B31/14 , C30B25/12 , C30B29/06 , C30B33/02 , Y10T117/1052 , Y10T117/1068
摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.
摘要翻译：不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1×1013-8.1014原子/ cm3，氧浓度为5.2×1017〜7.5×1017原子/ cm3，a 中心厚度BMD密度为3·108-2·1010cm-3，线性滑移的累积长度为3cm，面积滑移区域的累积面积为7cm 2，前表面具有<45个氮诱导缺陷 DNN通道中的>0.13μmLSE，厚度至少为5μm的层，其中发生尺寸为≥0.09μm的nlE; 1×104 COPs / cm 3，厚度≥5μm的无BMD层。这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。对于每个保持器，选择最大加热速率以避免形成滑动。

2. 发明申请

US20060213424A1 Silicon wafer and process for the heat treatment of a silicon wafer 有权
标题翻译：硅晶片和用于硅晶片热处理的工艺
公开(公告)号：US20060213424A1
公开(公告)日：2006-09-28
申请号：US11386855
申请日：2006-03-22
申请人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
发明人： Timo Mueller , Wilfried von Ammon , Erich Daub , Peter Krottenthaler , Klaus Messmann , Friedrich Passek , Reinhold Wahlich , Arnold Kuehhorn , Johannes Studener
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B31/14 , C30B25/12 , C30B29/06 , C30B33/02 , Y10T117/1052 , Y10T117/1068
摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.
摘要翻译：不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1.10×13×10 4原子/ cm 3， / SUP>，氧浓度为5.2.10±17.5×10 17原子/ cm 3，中心厚度BMD密度为3.10 直线滑移的累积长度<= 3cm，面积滑移区域的累积面积<= 7 在DNN通道中，前表面具有≥0.33μmLSE的氮诱发缺陷，至少5μm厚的层，其中<= 1.10×4 大于>0.09μm的COPs / cm 3> 3，并且不含BMD的层>5μm厚。这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。对于每个保持器，选择最大加热速率以避免形成滑动。

3. 发明申请

US20120007978A1 Method and Apparatus For Examining A Semiconductor Wafer 审中-公开
标题翻译：用于检查半导体晶片的方法和装置
公开(公告)号：US20120007978A1
公开(公告)日：2012-01-12
申请号：US13163932
申请日：2011-06-20
申请人： Friedrich Passek , Juergen Fuchs , Andreas Huber , Friedrich Langenfeld , Frank Laube
发明人： Friedrich Passek , Juergen Fuchs , Andreas Huber , Friedrich Langenfeld , Frank Laube
IPC分类号： G06K9/00 , H04N7/18
CPC分类号： G01N21/9503
摘要： The edges of semiconductor wafers are examined by an imaging method and the positions and forms of defects on the edge are determined, and in addition, a ring-shaped region on the flat area of the semiconductor wafer, the outer margin of which is ≦10 mm from the edge, is examined by means of photoelastic stress measurement and the positions of stressed regions in the ring-shaped region are determined, wherein the positions of the defects and the positions of the stressed regions are compared with one another, and the defects are classified in classes on the basis of their form and the results of the photoelastic stress measurement.
摘要翻译：通过成像方法检查半导体晶片的边缘，确定边缘上的缺陷的位置和形式，并且确定半导体晶片的平坦区域上的环形区域，其外边缘为＆lt; 通过光弹应力测量来检查距离边缘10mm的位置，并且确定环形区域中的应力区域的位置，其中将缺陷位置和应力区域的位置彼此进行比较，并且基于其形式和光弹应力测量的结果，将缺陷分类为类。

4. 发明申请

US20080026232A1 Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions And Method For Producing It 有权
标题翻译：包含缺陷区域的单晶半导体晶片及其制造方法
公开(公告)号：US20080026232A1
公开(公告)日：2008-01-31
申请号：US11828392
申请日：2007-07-26
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： B32B15/04 , H01L21/268
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译：单晶半导体晶片具有缺陷减少区域，缺陷减少区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷密度，以及占据半导体晶片的平面面积的10％至100％的总面积比，其中半导体晶片的其余区域具有比缺陷减少区域明显更高的缺陷密度。可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来生产晶片，其中每个位置以1GW / m 2的功率密度照射， SUP>至10GW / m 2至少25ms，其中激光器发射波长在晶片半导体材料的吸收边缘上方的波长，并且其中晶片的温度升高小于20 K作为照射的结果。

5. 发明授权

US08304860B2 Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer 有权
标题翻译：外延涂覆硅晶片和外延涂覆硅晶片的制造方法
公开(公告)号：US08304860B2
公开(公告)日：2012-11-06
申请号：US12658816
申请日：2010-02-16
申请人： Friedrich Passek , Frank Laube , Martin Pickel , Reinhard Schauer
发明人： Friedrich Passek , Frank Laube , Martin Pickel , Reinhard Schauer
IPC分类号： H01L29/06
CPC分类号： H01L21/02021 , C30B29/06 , C30B33/00 , H01L21/02052 , H01L21/02087 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/67046
摘要： Epitaxially coated silicon wafers have a rounded and polished edge region and a region adjacent to the edge having a width of 3 mm on the front and rear sides, a surface roughness in edge region of 0.1-1.5 nm RMS relative to a spatial wavelength range of 10-80 μm, and a variation of surface roughness of 1-10%. The wafer edges, after polishing, are examined for defects and roughness at the edge and surrounding region. Silicon wafers having a surface roughness of less than 1 nm RMS are pretreated in single wafer epitaxy reactors, first in a hydrogen atmosphere at a flow rate of 1-100 slm and in a second step, an etching medium with a flow rate of 0.5-5 slm is conducted onto the edge region of the wafer by a gas distribution device. The wafer is then epitaxially coated.
摘要翻译：外延涂覆的硅晶片具有圆形和抛光的边缘区域和与边缘相邻的区域，其在前侧和后侧具有3mm的宽度，相对于空间波长范围为0.1-1.5nm RMS的边缘区域的表面粗糙度 10-80μm，表面粗糙度变化范围为1-10％。抛光后的晶片边缘被检查边缘和周围区域的缺陷和粗糙度。具有小于1nm RMS的表面粗糙度的硅晶片在单晶片外延反应器中进行预处理，首先在氢气气氛中以1-100slm的流速进行预处理，在第二步中，流动速率为0.5- 通过气体分配装置将5slm传导到晶片的边缘区域。然后将晶片外延涂覆。

6. 发明申请

US20110318546A1 Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method For Producing It 有权
标题翻译：包含缺陷减少区域的单晶半导体晶片及其制造方法
公开(公告)号：US20110318546A1
公开(公告)日：2011-12-29
申请号：US13226772
申请日：2011-09-07
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： B32B3/00
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译：单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置，至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。

7. 发明申请

US20100224964A1 Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer 有权
标题翻译：外延涂覆硅晶片和外延涂覆硅晶片的制造方法
公开(公告)号：US20100224964A1
公开(公告)日：2010-09-09
申请号：US12658816
申请日：2010-02-16
申请人： Friedrich Passek , Frank Laube , Martin Pickel , Reinhard Schauer
发明人： Friedrich Passek , Frank Laube , Martin Pickel , Reinhard Schauer
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/02021 , C30B29/06 , C30B33/00 , H01L21/02052 , H01L21/02087 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/67046
摘要： Epitaxially coated silicon wafers have a rounded and polished edge region and a region adjacent to the edge having a width of 3 mm on the front and rear sides, a surface roughness in edge region of 0.1-1.5 nm RMS relative to a spatial wavelength range of 10-80 μm, and a variation of surface roughness of 1-10%. The wafer edges, after polishing, are examined for defects and roughness at the edge and surrounding region. Silicon wafers having a surface roughness of less than 1 nm RMS are pretreated in single wafer epitaxy reactors, first in a hydrogen atmosphere at a flow rate of 1-100 slm and in a second step, an etching medium with a flow rate of 0.5-5 slm is conducted onto the edge region of the wafer by a gas distribution device. The wafer is then epitaxially coated.
摘要翻译：外延涂覆的硅晶片具有圆形和抛光的边缘区域和与边缘相邻的区域，其在前侧和后侧具有3mm的宽度，相对于空间波长范围为0.1-1.5nm RMS的边缘区域的表面粗糙度 10-80μm，表面粗糙度变化范围为1-10％。抛光后的晶片边缘被检查边缘和周围区域的缺陷和粗糙度。具有小于1nm RMS的表面粗糙度的硅晶片在单晶片外延反应器中进行预处理，首先在氢气气氛中以1-100slm的流速进行预处理，在第二步中，流动速率为0.5- 通过气体分配装置将5slm传导到晶片的边缘区域。然后将晶片外延涂覆。

8. 发明授权

US07387963B2 Semiconductor wafer and process for producing a semiconductor wafer 有权
标题翻译：用于制造半导体晶片的半导体晶片和工艺
公开(公告)号：US07387963B2
公开(公告)日：2008-06-17
申请号：US11487653
申请日：2006-07-17
申请人： Rudolf Rupp , Werner Aigner , Friedrich Passek
发明人： Rudolf Rupp , Werner Aigner , Friedrich Passek
IPC分类号： H01L21/302
CPC分类号： H01L21/67219 , B24B9/065 , H01L21/02021 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 μm. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer, which is held on a centrally rotating chuck and projects beyond the chuck and at least one polishing drum which is inclined by a specific angle with respect to the chuck, rotates centrally and is covered with a polishing cloth, are moved toward one another and pressed onto one another under a specific contact pressure with a polishing abrasive being supplied continuously; (c) cleaning the semiconductor wafer; (d) inspecting an edge region of the semiconductor wafer using an inspection unit; and (e) further processing the semiconductor wafer.
摘要翻译：半导体晶片具有没有大于或等于0.3μm的缺陷的边缘区域。晶片通过一种工艺制造，包括（a）提供具有圆形和蚀刻边缘的半导体晶片; （b）抛光半导体晶片的边缘，其中保持在中心旋转卡盘上并突出超过卡盘的半导体晶片和相对于卡盘倾斜特定角度的至少一个抛光滚筒，旋转中心并用抛光布覆盖，彼此相向移动并在特定的接触压力下相互压制，并连续供应抛光磨料; （c）清洁半导体晶片; （d）使用检查单元检查半导体晶片的边缘区域; 和（e）进一步处理半导体晶片。

9. 发明授权

US08216361B2 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it 有权
标题翻译：包含缺陷区域的单晶半导体晶片及其制造方法
公开(公告)号：US08216361B2
公开(公告)日：2012-07-10
申请号：US13226772
申请日：2011-09-07
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： C30B29/04
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译：单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置，至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。

10. 发明授权

US08088219B2 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it 有权
公开(公告)号：US08088219B2
公开(公告)日：2012-01-03
申请号：US11828392
申请日：2007-07-26
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： C30B29/02
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.

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