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1. 发明申请

US20110318546A1 Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method For Producing It 有权
标题翻译：包含缺陷减少区域的单晶半导体晶片及其制造方法
公开(公告)号：US20110318546A1
公开(公告)日：2011-12-29
申请号：US13226772
申请日：2011-09-07
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： B32B3/00
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译：单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置，至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。

2. 发明申请

US20080026232A1 Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions And Method For Producing It 有权
标题翻译：包含缺陷区域的单晶半导体晶片及其制造方法
公开(公告)号：US20080026232A1
公开(公告)日：2008-01-31
申请号：US11828392
申请日：2007-07-26
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： B32B15/04 , H01L21/268
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译：单晶半导体晶片具有缺陷减少区域，缺陷减少区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷密度，以及占据半导体晶片的平面面积的10％至100％的总面积比，其中半导体晶片的其余区域具有比缺陷减少区域明显更高的缺陷密度。可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来生产晶片，其中每个位置以1GW / m 2的功率密度照射， SUP>至10GW / m 2至少25ms，其中激光器发射波长在晶片半导体材料的吸收边缘上方的波长，并且其中晶片的温度升高小于20 K作为照射的结果。

3. 发明授权

US08216361B2 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it 有权
标题翻译：包含缺陷区域的单晶半导体晶片及其制造方法
公开(公告)号：US08216361B2
公开(公告)日：2012-07-10
申请号：US13226772
申请日：2011-09-07
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： C30B29/04
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译：单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置，至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。

4. 发明授权

US08088219B2 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it 有权
公开(公告)号：US08088219B2
公开(公告)日：2012-01-03
申请号：US11828392
申请日：2007-07-26
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： C30B29/02
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.

5. 发明申请

US20120007978A1 Method and Apparatus For Examining A Semiconductor Wafer 审中-公开
标题翻译：用于检查半导体晶片的方法和装置
公开(公告)号：US20120007978A1
公开(公告)日：2012-01-12
申请号：US13163932
申请日：2011-06-20
申请人： Friedrich Passek , Juergen Fuchs , Andreas Huber , Friedrich Langenfeld , Frank Laube
发明人： Friedrich Passek , Juergen Fuchs , Andreas Huber , Friedrich Langenfeld , Frank Laube
IPC分类号： G06K9/00 , H04N7/18
CPC分类号： G01N21/9503
摘要： The edges of semiconductor wafers are examined by an imaging method and the positions and forms of defects on the edge are determined, and in addition, a ring-shaped region on the flat area of the semiconductor wafer, the outer margin of which is ≦10 mm from the edge, is examined by means of photoelastic stress measurement and the positions of stressed regions in the ring-shaped region are determined, wherein the positions of the defects and the positions of the stressed regions are compared with one another, and the defects are classified in classes on the basis of their form and the results of the photoelastic stress measurement.
摘要翻译：通过成像方法检查半导体晶片的边缘，确定边缘上的缺陷的位置和形式，并且确定半导体晶片的平坦区域上的环形区域，其外边缘为＆lt; 通过光弹应力测量来检查距离边缘10mm的位置，并且确定环形区域中的应力区域的位置，其中将缺陷位置和应力区域的位置彼此进行比较，并且基于其形式和光弹应力测量的结果，将缺陷分类为类。

6. 发明授权

US07387676B2 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
标题翻译：具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片
公开(公告)号：US07387676B2
公开(公告)日：2008-06-17
申请号：US11452870
申请日：2006-06-14
申请人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
发明人： Wilfried von Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
IPC分类号： C30B15/00
CPC分类号： C30B15/203 , C30B29/06
摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.
摘要翻译：在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比值V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩该区域的尺寸不再超过临界尺寸。在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

7. 发明申请

US20060283374A1 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
标题翻译：具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片
公开(公告)号：US20060283374A1
公开(公告)日：2006-12-21
申请号：US11452870
申请日：2006-06-14
申请人： Wilfried Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
发明人： Wilfried Ammon , Walter Haeckl , Andreas Huber , Ulrich Lambert
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/203 , C30B29/06
摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.
摘要翻译：在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比率V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩该区域的尺寸不再超过临界尺寸。在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

8. 发明授权

US07122865B2 SOI wafer and process for producing it 有权
标题翻译： SOI晶片及其制造方法
公开(公告)号：US07122865B2
公开(公告)日：2006-10-17
申请号：US10853322
申请日：2004-05-25
申请人： Robert Hölzl , Dirk Dantz , Andreas Huber , Ulrich Lambert , Reinhold Wahlich
发明人： Robert Hölzl , Dirk Dantz , Andreas Huber , Ulrich Lambert , Reinhold Wahlich
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/2007 , H01L21/76254
摘要： An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 μm, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm2.A process is for producing an SOI wafer of this type, in which a substrate wafer made from silicon is joined to a donor wafer via a layer of the electrically insulating material which has previously been applied. The donor wafer bears a donor layer of single-crystal silicon, with a concentration of vacancies of at most 1012/cm3 and of vacancy agglomerates of at most 105/cm3. After the wafers have been joined, the thickness of the donor wafer is reduced in such a manner that the single-crystal silicon layer having these properties is formed from the donor layer, this single-crystal silicon layer being joined to the substrate wafer via the layer of electrically insulating material.
摘要翻译： SOI晶片包括由硅制成的衬底，具有至少1.6W /（Km）的热导率和厚度为10nm至10μm的单晶硅层的电绝缘层，标准偏差从平均层厚度至多5％，密度至多为0.5HF缺陷/ cm 2。一种制造这种SOI晶片的方法，其中由硅制成的衬底晶片通过预先施加的电绝缘材料层与施主晶片接合。供体晶片承载单晶硅的施主层，其空位浓度至多为10 12 / cm 3，空位团聚体最多为10 ^{5/3/3。在晶片已经接合之后，施主晶片的厚度被减小，使得具有这些性质的单晶硅层由施主层形成，该单晶硅层通过该晶体管接合到衬底晶片电绝缘材料层。}

9. 发明授权

US08805132B2 Integrated circuit package connected to a data transmission medium 有权
标题翻译：集成电路封装连接到数据传输介质
公开(公告)号：US08805132B2
公开(公告)日：2014-08-12
申请号：US13312327
申请日：2011-12-06
申请人： Harry Barowski , Thomas Brunschwiler , Roger F. Dangel , Hubert Harrer , Andreas Huber , Norbert M. Meier , Bruno Michel , Tim Niggemeier , Stephan Paredes , Jochen Supper , Jonas R. Weiss
发明人： Harry Barowski , Thomas Brunschwiler , Roger F. Dangel , Hubert Harrer , Andreas Huber , Norbert M. Meier , Bruno Michel , Tim Niggemeier , Stephan Paredes , Jochen Supper , Jonas R. Weiss
IPC分类号： G02B6/12 , G02B6/26 , H01L23/02 , H01L23/48 , H01L23/52 , H01L21/00 , G02B6/43 , H01L25/065 , H01L23/522
CPC分类号： G02B6/43 , H01L23/3128 , H01L23/481 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L25/0657 , H01L2224/03464 , H01L2224/0401 , H01L2224/05009 , H01L2224/051 , H01L2224/05147 , H01L2224/05184 , H01L2224/05655 , H01L2224/131 , H01L2224/14183 , H01L2224/16145 , H01L2224/16195 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06534 , H01L2225/06551 , H01L2225/06565 , H01L2924/14 , H01L2924/1533 , H01L2924/014
摘要： An integrated circuit coupling device includes an integrated circuit package with N integrated circuit layers (L1-LN) arranged as a 3D stack; and a data transmission medium with n data transmission layers (l1-ln), wherein n≧1 and N≧2, and wherein the N integrated circuit layers are electrically connectable to the n data transmission layers.
摘要翻译：集成电路耦合装置包括具有以3D叠层排列的N个集成电路层（L1-LN）的集成电路封装; 以及具有n个数据传输层（111-1）的数据传输介质，其中n≥1且N≥2，并且其中所述N个集成电路层可电连接到所述n个数据传输层。

10. 发明授权

US08635874B2 Gas turbine combustor including an acoustic damper device 有权
标题翻译：包括声阻尼装置的燃气轮机燃烧器
公开(公告)号：US08635874B2
公开(公告)日：2014-01-28
申请号：US13424839
申请日：2012-03-20
申请人： Adnan Eroglu , Ewald Freitag , Uwe Rüdel , Urs Benz , Andreas Huber
发明人： Adnan Eroglu , Ewald Freitag , Uwe Rüdel , Urs Benz , Andreas Huber
IPC分类号： F02C7/24
CPC分类号： F23R3/002 , F23M20/005 , F23R2900/00014
摘要： An exemplary combustor includes at least a portion having an inner liner and an outer cover plate, which together form an interposed cooling chamber. A plurality of hollow elements extend from the liner and protrude into the cooling chamber. Each hollow element defines a damping volume connected to an inner volume of the combustion chamber via a calibrated duct. During operation, the hollow elements damp pressure pulsations and, in addition, also transfer heat.
摘要翻译：示例性燃烧器包括至少一部分，其具有内衬和外盖板，它们一起形成插入的冷却室。多个中空元件从衬套延伸并突出到冷却室中。每个中空元件通过校准的管道限定连接到燃烧室的内部容积的阻尼体积。在操作过程中，中空元件阻尼压力脉动，另外也传递热量。

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